• 대한기계학회논문집
• /
• 제18권1호
• /
• pp.175-183
• /
• 1994

To investigate thermophoretic effect on particle deposition, average deposition velocity toward a horizontal wafer surface in vertical airflow is measured keeping the wafer surface temperature different from the surrounding air temperature. In the present measurement, the temperature difference is maintained in the range from -10 to $4^{\circ}$ C Polystyrene latex (PSL) spheres of diameter between 0.3 and 0.8 .mu.m are used for the experiment. The number of particles deposited on a wafer surface is estimated from the measurements using a wafer surface scanner (PMS SAS-3600). Experimental data are compared with prediction model results.

• 대한기계학회논문집
• /
• 제19권5호
• /
• pp.1319-1332
• /
• 1995

Numerical analysis was performed to characterize the particle deposition behavior on a horizontal free-standing wafer with thermophoretic effect under the turbulent flow field. A low Reynolds number k-.epsilon. turbulence model was used to analyze the turbulent flow field around the wafer, and the temperature field for the calculation of the thermophoretic effect was predicted from the energy equation introducing the eddy diffusivity concept. The deposition mechanisms considered were convection, diffusion, sedimentation, turbulence and thermophoresis. For both the upper and lower surfaces of the wafer, the averaged particle deposition velocities and their radial distributions were calculated and compared with the laminar flow results and available experimental data. It was shown by the calculated averaged particle deposition velocities on the upper surface of the wafer that the deposition-free zone, where the deposition velocite is lower than 10$^{-5}$ cm/s, exists between 0.096 .mu.m and 1.6 .mu.m through the influence of thermophoresis with positive temperature difference of 10 K between the wafer and the ambient air. As for the calsulated local deposition velocities, for small particle sizes d$_{p}$<0.05 .mu.m, the deposition velocity is higher at the center of the wafer than at the wafer edge, whereas for particle size of d$_{p}$ = 2.0 .mu.m the deposition takes place mainly on the inside area of the wafer. Finally, an approximate model for calculating the deposition velocities was recommended and the calculated deposition velocity results were compared with the present numerical solutions, those of Schmidt et al.'s model and the experimental data of Opiolka et al.. It is shown by the comparison that the results of the recommended model agree better with the numerical solutions and Opiolka et al.'s data than those of Schmidt's simple model.

• 한국입자에어로졸학회지
• /
• 제14권2호
• /
• pp.41-47
• /
• 2018

Numerical analysis was conducted to characterize particle deposition onto a heated horizontal semiconductor wafer in vacuum environment. In order to calculate the properties of gas surrounding the wafer, the gas was assumed to obey the ideal gas law. Particle transport mechanisms considered in the present study were convection, Brownian diffusion, gravitational settling and thermophoresis. Averaged particle deposition velocities on the upper surface of the wafer were calculated with respect to particle size, based on the numerical results from the particle concentration equation in the Eulerian frame of reference. The deposition velocities were obtained for system pressures of 1000 Pa~1 atm, wafer heating of 0~5 K and particle sizes of $2{\sim}10^4nm$. The present numerical results showed good agreement with the available experimental ones.

• 대한기계학회논문집B
• /
• 제21권10호
• /
• pp.1284-1293
• /
• 1997

The electrostatic effect on particle deposition onto a heated, Horizontal free-standing wafer surface was investigated numerically. The deposition mechanisms considered were convection, Brownian and turbulent diffusion, sedimentation, thermophoresis and electrostatic force. The electric charge on particle needed to calculate the electrostatic migration velocity induced by the local electric field was assumed to be the Boltzmann equilibrium charge. The electrostatic forces acted upon the particle included the Coulombic, image, dielectrophoretic and dipole-dipole forces based on the assumption that the particle and wafer surface are conducting. The electric potential distribution needed to calculate the local electric field around the wafer was calculated from the Laplace equation. The averaged and local deposition velocities were obtained for a temperature difference of 0-10 K and an applied voltage of 0-1000 v.The numerical results were then compared with those of the present suggested approximate model and the available experimental data. The comparison showed relatively good agreement between them.

• 설비공학논문집
• /
• 제5권2호
• /
• pp.130-140
• /
• 1993

Average particle deposition velocity toward a horizontal semiconductor wafer in vertical airflow is measured by a wafer surface scanner(PMS SAS-3600). Use of wafer surface scanner requires very short exposure time normally ranging from 10 to 30 minutes, and hence makes repetition of experiment much easier. Polystyrene latex (PSL) spheres of diameter between 0.2 and $1.0{\mu}m$ are used. The present range of particle sizes is very important in controlling particle deposition on a wafer surface in industrial applications. For the present experiment, convection, diffusion, and sedimentation comprise important agents for deposition mechanisms. To investigate confidence interval of experimental data, mean and standard deviation of average deposition velocities are obtained from more than ten data set for each PSL sphere size. It is found that the distribution of mean of average deposition velocities from the measurement agrees well with the predictions of Liu and Ahn(1987) and Emi et al.(1989).

• 대한기계학회논문집B
• /
• 제26권12호
• /
• pp.1715-1721
• /
• 2002

Numerical analysis was conducted to characterize the gas flow field and particle deposition on a horizontal freestanding semiconductor wafer under the laminar flow field at vacuum environment. In order to calculate the properties of gas, the gas was assumed to obey the ideal gas law. The particle transport mechanisms considered were convection, Brownian diffusion and gravitational settling. The averaged particle deposition velocities and their radial distributions fnr the upper surface of the wafer were calculated from the particle concentration equation in an Eulerian frame of reference for system pressures of 1 mbar~1 atm and particle sizes of 2nm~10$^4$ nm(10 ${\mu}{\textrm}{m}$). It was observed that as the system pressure decreases, the boundary layer of gas flow becomes thicker and the deposition velocities are increased over the whole range of particle size. One thing to be noted here is that the deposition velocities are increased in the diffusion dominant particle size range with decreasing system pressure, whereas the thickness of the boundary layer is larger. This contradiction is attributed to the increase of particle mechanical mobility and the consequent increase of Brownian diffusion with decreasing the system pressure. The present numerical results showed good agreement with the results of the approximate model and the available experimental data.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2003년도 춘계학술대회 논문집
• /
• pp.1018-1021
• /
• 2003

A scratch tester was developed to evaluate the adhesive strength at interface between thin film and substrate(silicon wafer). Under force control, the scratch tester can measure the normal and the horizontal forces simultaneously as the probe tip of the equipment approaches to the interface between thin film and substrate of wafer. The capacity of each component of force sensor is 0.1 N ∼ 100 N. In addition, the tester can detect the signal of elastic wave from AE sensor(frequency range of 900 kHz) attached to the probe tip and evaluate the bonding strength of interface. Using the developed scratch tester. the feasibility test was performed to evaluate the adhesive strength of semiconductor wafer.

• 한국결정성장학회지
• /
• 제15권4호
• /
• pp.135-140
• /
• 2005

Thermal-fluid analysis was performed to understand the thermal behavior in the horizontal CVD reactor thereby to design a susceptor which has a uniform deposition rate during silicon EPI growing. Four different types of susceptor designs, standard (no hole susceptor), hole $\sharp$1 (240 mm), hole $\sharp$2 (150 mm) and hole $\sharp$3 (60 mm), were simulated by CFD (Computational Fluid Dynamics) tool. Temperature, gas flow, deposition rate and growth rate were calculated and analyzed. The degree of flatness of EPI wafer loaded on the susceptor was computed in terms of silicon growth rate. The simulation results show that the temperature and thermal distribution in the wafer are greatly dependent on inner diameter of hole susceptor and demonstrate that the introduction of hole in the susceptor can degrade wafer flatness. Maximum temperature difference appeared around holes. As the diameter of the hole decreases, flatness of the wafer becomes poor. Among the threes types of susceptors with the hole, optimal design which resulted a good uniform flatness ($5\%$) was obtained when using hole $\sharp$1.

• 한국결정성장학회지
• /
• 제10권5호
• /
• pp.350-355
• /
• 2000

수평 Bridgeman방식으로 성장된 C축 방향의 사파이어 결정기판을 연마 가공하였으며, 또한 유기금속 기상화학 증착 방법으로 사파이어 기판 위에 GaN 박막을 증착하였다. 사파이어 인고트를 성장하여 2인치 사파이어 기판으로 이용하였으며 웨이퍼 절편장치 및 연마장치를 개발하였다. 이러한 다단계의 연마 가공은 기판 표면을 경면화하였다. 표면 평탄도 및 조도는 원자힘현미경으로 측정하였다. 개발된 사파이어 기판위에 성장된 GaN 박막의 특성 및 청색광소자로의 응용 가능성을 확인하였다.

• 대한기계학회논문집
• /
• 제17권9호
• /
• pp.2315-2328
• /
• 1993

The turbulence effect of particle deposition on a horizontal free-standing wafer in a vertical flow has been studied numerically by using the low-Reynolds-number k-.epsilon. turbulence model. For both the upper and lower surfaces of the wafer, predictions are made of the averaged particle deposition velocity and its radial distribution. Thus, it is now possible to obtain local information about the particle deposition on a free-standing wafer. The present result indicates that the particle deposition velocity on the lower surface of wafer is comparable to that on the upper one in the diffusion controlled deposition region in which the particle sizes are smaller than $0.1{\mu}m$. And it is found in this region that, compared to the laminar flow case, the averaged deposition velocity under the turbulent flow is about two times higher, and also that the local deposition velocity at the center of wafer is high equivalent to that the wafer edge.