• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.6
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• pp.305-311
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• 2004

Charge transport phenomena of polyaniline-DBSA/High Impact Polystyrene (PAM-DBSA/HIPS) blends have been studied through an examination of electrical conduction. HIPS used host polymer in the blends and PANI-DBSA obey a space charge limited conduction mechanism and a ohmic conduction mechanism respectively. However, PANI-DBSA/HIPS blends do not obey any classical conduction mechanism. Analysis of conduction mechanism revealed that the charging current of PANI-DBSA/HIPS blends increased with the increase of PANI-DBSA content. This result migrlt be explained by the reduction in the distance between PANI-DBSA particles enabling the charge carriers to migrate from a chain to a neighboring chain via hopping or micro tunneling. It was also found that the charging current of PANI-DBSA/HIPS blends decreased as the temperature was elevated, which is of typical phenomena in metals. It is speculated that the charge transport in PANI-DBSA particle was somewhat constrained due to strong phonon scattering.

• Journal of the Korean Ceramic Society
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• v.41 no.11
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• pp.858-863
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• 2004

The thermoelectric power, dc conductivity and magnetic properties of the cubic L $a_{2}$ 3/Ti $O_{2.84}$ were investigated. The thermoelectric power was negative below 350 K. The measured thermoelectric power of L $a_{2}$ 3/Ti $O_{2.84}$ increased linearly with temperature, in agreement with model proposed by Emin and Wood, and was represented by A+BT. Temperature dependence indicates that the charge carrier in this material is a small polaron. L $a_{2}$ 3/Ti $O_{2.84}$ exhibited a cross over from variable range hopping to small polaron hopping conduction at a characteristic temperature well below room temperature. The low temperature do conduction mechanism in L $a_{2}$ 3/Ti $O_{2.84}$ was analyzed using Mott's approach. Mott parameter analysis gave values for the density of state at Fermi level [N( $E_{F}$)] = 3.18${\times}$10$^{20}$ c $m^{-3}$ e $V^{-1}$ . The disorder energy ( $W_{d}$) was found to be 0.93 eV, However, it was noted that the value of the disorder energy was much higher than the high temperature activation energy. The exist linear relation between log($\sigma$T)와 1/T in the range of 200 to 300 K, the activation energy for small polaron hopping was 0.15 eV.

• Journal of the Korean Ceramic Society
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• v.43 no.2 s.285
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• pp.131-135
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• 2006

In this study, the dielectric, magnetic and transport properties of $Gd_{0.33}Sr_{0.67}FeO_3$ have been analyzed. The dielectric loss anomaly was found to be around 170 K. The activation energy corresponding to relaxation process of this dielectric anomaly was 0.17 eV. From the temperature dependence of the characteristic frequency, we concluded that the elementary process of the dielectric relaxation peak observed is correlated with polaron hopping between $Fe^{3+}\;and\;Fe^{4+}$ ions. The electrical resistivity displayed thermally activated temperature dependence above 200 K with an activation energy of 0.16 eV. In addition, the temperature dependence of thermoelectric power and resistivity suggests that the charge carrier responsible for conduction is strongly localized.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.376-382
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• 2001

Magnetic and transport properties in the ceramic specimen of L $a_{0.7}$S $r_{0.3}$Fe $O_3$ with orthohombic structure has been investigated. Weak ferromagnetism has been observed in a ceramic sample of L $a_{0.7}$S $r_{0.3}$Fe $O_3$. Large dielectric relaxation of Debye type is observed in paramagnetic states within the temperature range of 130K~200K. From the temperature dependence of the characteristic frequency, we concluded that the elementary process of the dispersion is related to holes hopping between F $e^{3+}$ and F $e^{4+}$ ions. The temperature dependencies of thermoelectric power and Dc conductivity suggest that the charge carrier responsible for the conduction are strongly localized. These experimental results have been interpreted in terms of a hopping process involving small polaron.n.laron.n.

• Korean Journal of Materials Research
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• v.18 no.1
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• pp.26-31
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• 2008

The dc resistivity and thermoelectric power of bilayered perovskite $La_{1.4}(Sr_{0.2}Ca_{1.4})Mn_2O_7$ were measured as a function of the temperature. In the ferromagnetic phase, ${\rho}(T)$ was accurately predicted by $a_0+a_2T^2+a_{4.5}T^{4.5}$ with and without an applied field. At high temperatures, a significant difference between the activation energy deduced from the electrical resistivity and thermoelectric power, a characteristic of small polarons, was observed. All of the experimental data can be feasibly explained on the basis of the small polaron.

• Journal of the Korean Chemical Society
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• v.53 no.1
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• pp.42-50
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• 2009

The dielectric-spectroscopic and ac conductivity studies firstly carried out on layered manganese doped Sodium Lithium Trititanates ($Na_{1.9}Li_{0.1}Ti_3O_7$). The dependence of loss tangent (Tan$\delta$), relative permittivity ($\varepsilon_r$) and ac conductivity ($\sigma_{ac}$) in temperature range 373-723K and frequency range 100Hz-1MHz studied on doped derivatives. Various conduction mechanisms are involved during temperature range of study like electronic hopping conduction in lowest temperature region, for MSLT-1 and MSLT-2. The hindered interlayer ionic conduction exists with electronic hopping conduction for MSLT-3. The associated interlayer ionic conduction exists in mid temperature region for all doped derivatives. In highest temperature region modified interlayer ionic conduction along with the polaronic conduction, exist for MSLT-1, MSLT-2, and only modified interlayer ionic conduction for MSLT-3. The loss tangent (Tan$\delta$) in manganese-doped derivatives of layered $Na_{1.9}Li_{0.1}Ti_3O_7$ ceramic may be due to contribution of electric conduction, dipole orientation, and space charge polarization. The corresponding increase in the values of relative permittivity may be due to increase in number of dipoles in the interlayer space while the corresponding decrease in the values of relative permittivity may be due to the increase in the leakage current due to the higher doping.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.776-782
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• 1996

The electrical properties of vapor deposition polymerized polymide thin films for getting an in-line system with manufacturing process of semiconductor device, have been studied. Polyimide thin films fabricated by vapor deposition polymerization(VDP) method based on PMDA and 4,4'-DDE monomer were confirmed by FT-IR spectra. It is found that the major conduction carriers of thin films are ions, and the hopping length of ions is almost same with monomer length at the temperature over 120.deg. C through the analysis of electrical conduction mechanism. Also, The activation energy is about 0.69 eV at the temperature of >$30^{\circ}C$ - >$150^{\circ}C$ and it is shown that the resistivity at which thin films can be used as an insulating film between layers of semiconductor device, is 3.2*10$^{15}$ .ohm.cm.

• Korean Journal of Materials Research
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• v.26 no.12
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• pp.721-725
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• 2016

This work focuses on the electrical conduction mechanism in a lead free ($Na_{0.5}K_{0.5}NbO_3$ ; NKN) ceramics system with $LiNbO_3$ content of approximately critical concentration $x{\geq}0.2$. Lead free $(1-x)(Na_{0.5}K_{0.5})NbO_3-x(LiNbO_3)$, $NKN-LN_x$ (x = 0.1, 0.2) ceramics were synthesized by solid-state reaction method. Crystal structures are confirmed by X-ray diffraction. The electric-mechanical bond coefficient $k_p$ decreases and the phase transition temperature $T_c$ increases with increasing x content, as determined by dielectric and piezoelectric measurements. The value of the real dielectric constants ${\varepsilon}^{\prime}$ and $k_BT{\varepsilon}^{\prime\prime}$ showed anomalies around $T_c$ ($462^{\circ}C$ in the NKN-LN0.1 and $500^{\circ}C$ in the NKN-LN0.2). For the ionic conduction of mobile ions, the activation energies are obtained as $E_I=1.76eV$ (NKN-LN0.1) and $E_I=1.55eV$ (NKN-LN0.2), above $T_c$, and $E_{II}=0.78$ (NKNL-N0.1) and $E_{II}=0.81$ (NKN-LN0.2) below $T_c$. It is believed that the conduction mechanisms of NKN-LNx ceramics are related to ionic hopping conduction, which may arise mainly due to the jumping of $Li^+$ ions.

• Korean Journal of Materials Research
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• v.7 no.1
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• pp.81-88
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• 1997

Vanadate glasses using $B_2O_3$ as a network former and with CuO additive were mainly investigated in relation to electrical properties. Crystalline phases formed by heat-treatment in each composition were examined and dc electrical conductivity changes of the glasses were analyzed. Crystalline phases were identified as $V_3O_5,\;a-CuV_2O_6\;and\;{\beta}-CuV_2O_6$ by XRD analysis. Crystallization degrees of $V_2O_5$ and ${\beta}-CuV_2O_6$ were little changed with heat-treatment time, but those of ${\alpha}u-CuV_2O_6$ were changed sharply with heat-treatment time. The more crystallization of ${\alpha}u-CuV_2O_6$ occurred, the higher electrical conductivity was observed. Electrical conductivities with $10^{-2}~10^{-4}/{\Omega}/cm$ at room temperature(303K) could be obtained by controlling the glass compositions. The electrical conductivities were increased with increasing of $V_20_5$ content and decreasing of alkality($CuO/B_2O_3$). In this study, electron was proved to be charge carrier by seebeck coefficient measurement. Accordingly, the glasses are believed to be n-type semiconductor. Calculated activation energies for the conduction were in the range 0.098-0.124 eV. Electrical conduction mechanism was small polaron hopping without showing variable range hopping in the temperature range $30~200^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.615-619
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• 2008

A molecular memory device which has a structure of Al/$Al_2O_3$/ASA-15 LB monolayer/Ti/Al device, was fabricated. To study a charge transfer mechanism of molecular memory devices, current density-voltage (J-V) characteristics were measured at an increasing temperature range from 10 K to 300 K with an interval of 30 K. Strong temperature-dependent electrical property and tunneling through organic monolayer at low bias (below 0.5 V) were appeared. These experimental data were fitted by using a theoretical formula such as the Simmons model. In comparison between the theoretical and the experimental results, it was verified that the fitting results using the Simmons model about direct tunneling was fairly fitted below 0.5 V at both 300 K and 10 K. Hopping conduction was also dominant at all voltage range above 200 K due to charges trapped by defects located within the dielectric stack, including the $Al_2O_3$, organic monolayer and Ti interfaces.