• Journal of Industrial Technology
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• v.19
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• pp.101-105
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• 1999

Ultra thin $Ta_2O_5$ gate dielectrics were prepared by RTMOCVD (rapid thermal metal organic chemical vapor deposition) using Ta source $TaC_{12}H_{30}O_5N$ and $O_2$ gaseous mixtures. As a result, $Ta_2O_5$ thin films showed significantly low leakage current compared to $SiO_2$ of identical thickness, which was due to the stabilization of the interfacial layer by NO ($SiO_xN_y$) passivation layer. The conduction of leakage current in $Ta_2O_5$ thin films was described by the hopping mechanism of Poole-Frenkel (PF) type.

• Bulletin of the Korean Chemical Society
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• v.30 no.7
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• pp.1543-1546
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• 2009

Temperature and frequency dependent AC conductivity behavior has been studied for the chemically synthesized polyaniline-polymannuronate (PANI-PM) composites. The temperature (300 - 500 K) and frequency (100 - $10^6$ Hz) dependent AC conductivity suggests evidence for the transport mechanism in PANI-PM composites. The frequency dependence of AC conductivity has been investigated by the power law. The frequency exponent (s) is determined, and the data suggest that s decreases with temperature. The variation of s with temperature suggests that AC conduction is due to the correlated barrier hopping.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.142-143
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• 2006

Organic thin film transistors(OTFTs) were simulated by a SPICE model adopted in the amorphous TFTs(a-Si:H TFTs). The gate voltage-dependent mobilities were assumed to fit the representative current-voltage characteristics. The optimal fitting procedures were suggested to compare the experimental data with the mathematical expressions used in the amorphous TFTs. Each SPICE parameter explains the gate dependent mobilities in OTFTs which might originate from the influence of the hopping conduction.

• Bulletin of the Korean Chemical Society
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• v.16 no.3
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• pp.261-264
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• 1995

A series of samples of the Nd1-x(Ba0.40Mg0.60)1+xFeO4-y (x=0.00, 0.10, 0.20, and 0.30) system has been synthesized at 1450 ℃ under an atmospheric air pressure. The x-ray powder diffraction analysis of the solid solutions assigns the structure of all the compositions to orthorhombic system. Mohr salt analysis shows that τ and y values increase with x value and nonstoichiometric chemical formulas of the system can be formulated from the x, τ, and y values. Oxygen vacancies are distributed along c-axis in the perovskite layer. The magnetic ordering temperature remains unchanged with x value. Electrical conductivity and activation energy depend only on the mixed valence state of Fe ion. Conduction mechanism can be suggested as the hopping of electron between eg orbitals of Fe3+ and Fe4+ ions through Fe3+-O-Fe4+ bonds. Magnetic susceptibility and electrical conductivity are discussed with the nonstoichiometric chemical formulas.

• Bulletin of the Korean Chemical Society
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• v.16 no.4
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• pp.299-304
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• 1995

In order to find out the relationship between electronic structures of metal oxychlorides (MOCl) and their physicochemical properties, we have carried out the tight-binding band electronic structure calculations with Extended Huckel (EH) method for TiOCl, VOCl and FeOCl. The relative contribution of metal atom to DOS at Fermi level increases in the order of Ti, V and Fe, which is parallel to the reactivities of MOCl toward guest species. The M2+ ion plays a crucial role in the electric conductivity of MOCl and its intercalation compounds. Hopping conduction theory is applied to explain the increase of conductivity after intercalation.

• Journal of Korean Ophthalmic Optics Society
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• v.1 no.2
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• pp.37-42
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• 1996

The $Bi_{12}(Si,Ge)O_{20}$ single crystals were prepared by Czochralski method and the study of electrical and optical properties were carried out. The activation energy of the electrical conductivity was $E_g$=1.12 eV. The optical energy gap measured in the room temperature is found to be 2.3 eV. A.c. conductivity of crystal $Bi_{12}(Si,Ge)O_{20}$ was measured at temperatures from 290 K to 570 K in the frequency range from 50 kHz to 30 MHz. The a.c. conductivity is proportional to ${\omega}^s$. In view of this it should be hopping conduction mechanisms. At high frequencies, the power exponent was s=2. The low frequency dielectric constants were 54 for $Bi_{12}(Si,Ge)O_{20}$ and 41 for $Bi_{12}(Si,Ge)O_{20}$ single crystals.

• Journal of the Korean Institute of Telematics and Electronics
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• v.14 no.3
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• pp.25-31
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• 1977

Fe V spinels were prepared by sintering the well-ground stoichiometric mixtures of Fe O and V O at 1,10$0^{\circ}C$ under H -CO atmosphere. The activation energy for electrical conduction decreases with increasing amount of iron. The tendency of activation energy depending on the amount of iron contained clarifies that the electrical condction of the spinel is mainly due to electron hopping between Fe and Fe ions at B sites. In the experiment for negative resistance characteristics, the threshold voltage (Vth) for the samples is related to ambient temperature, thickness and raising rate of applied voltage. Vth decreases as temperature increases while Vth increases linearly with thickness and Vth increases linearly with the raising rate of applied voltage in semi-logarithmic scale. These results lead to a conclusion that current paths mainly formed by thermal breakdown are ascribed to the negative resistance phenomena. Applying this property, these vanadium iron spinels may be used for switching elements.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.49-53
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• 2017

We study on the change of electrical properties of two-dimensional (2D) $SnSe_2$ materials with respect to Cl doping as $SnSe_{1.994}Cl_{0.006}$ under a high temperature condition. (300~450 K) By the simple solid-state reaction method, non-and Cl-doped 2D $SnSe_2$ materials are successfully synthesized with negligible impurities as confirmed by X-ray diffraction. From the temperature dependence of resistivity, it is observed that the conduction mechanism is changed from hopping to degenerate conduction with Cl doping. By Hall effect measurement, an increase on electron carrier concentration from ${\sim}7{\times}10^{16}$ to ${\sim}3{\times}10^{18}cm^{-3}$ with Cl doping verifies that Cl is an effective electron donor which results in the encouraged carrier concentration. Detailed analysis for temperature dependent Hall mobility reveals that the electrical transports in high temperature regime are governed by the grain boundary-controlled mechanism for non-doped $SnSe_2$, which is effectively suppressed by Cl-doping as entering metallic transport regime.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.319-325
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• 1999

Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.

• Bulletin of the Korean Chemical Society
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• v.15 no.3
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• pp.256-260
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• 1994

Perovskite type oxides of the $Sr_xHo_{1-x}FeO_{3-y}$ system with compositions of x=0.00, 0.25, 0.50, 0.75, and 1.00 have been prepared at 1200$^{\circ}$C in air. X-ray powder diffraction assigns the compositions with x=0.00 and 0.25 to the orthorhombic crystal system and those with x=0.50, 0.75, and 1.00 to the cubic one. The unit cell volumes of solid solutions increase with x in the system. Nonstoichiometric chemical formulas were determined by Mohr salt titration. The mole ratio of $Fe^{4+}$ ions to total iron ions and the concentration of oxygen ion vacancies increase with x. Mossbauer spectra for the compositions of x= 0.00, 0.25, and 0.50 show six lines indicating the presence of $Fe^{3+}$ ions in the octahedral site. However, the presence of $Fe^{4+}$ ions may also be detected in the spectra for the compositions with x=0.25 and x=0.50. In the compositions with x=0.75 and 1.00, single line patterns show also the mixed valence state of $Fe^{3+}$ and $Fe^{4+}$ ions. The electrical conductivity in the temperature range of -100$^{\circ}$C to 100$^{\circ}$C under atmospheric air pressure increases sharply with x but the activation energy decreases with the mole ratio of $Fe^{4+}$ ion. The conduction mechanism of the perovskite system seems to be hopping of the conduction electrons between the mixed valence iron ions.