• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권6호
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• pp.305-311
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• 2004

Charge transport phenomena of polyaniline-DBSA/High Impact Polystyrene (PAM-DBSA/HIPS) blends have been studied through an examination of electrical conduction. HIPS used host polymer in the blends and PANI-DBSA obey a space charge limited conduction mechanism and a ohmic conduction mechanism respectively. However, PANI-DBSA/HIPS blends do not obey any classical conduction mechanism. Analysis of conduction mechanism revealed that the charging current of PANI-DBSA/HIPS blends increased with the increase of PANI-DBSA content. This result migrlt be explained by the reduction in the distance between PANI-DBSA particles enabling the charge carriers to migrate from a chain to a neighboring chain via hopping or micro tunneling. It was also found that the charging current of PANI-DBSA/HIPS blends decreased as the temperature was elevated, which is of typical phenomena in metals. It is speculated that the charge transport in PANI-DBSA particle was somewhat constrained due to strong phonon scattering.

• 한국세라믹학회지
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• 제41권11호
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• pp.858-863
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• 2004

본 연구는 입방정 L $a_{2}$ 3/Ti $O_{2.84}$ 세라믹스의 전기전도율, 열기전력 그리고 자기적 특성에 대하여 조사하였다. 350 K 이하의 은도영역에서의 입방정 L $a_{2}$ 3/Ti $O_{2.84}$ 세라믹스의 열기전력은 음으로 나타났다 열기전력은 온도의 증가와 더불어 선형적으로 증가하여 A+BT의 형태로 표현가능 하였으며, Emin과 Wood가 제안한 모델과 잘 일치하였다. 이와 같은 열기전력의 온도의존성은 L $a_{2}$ 3/Ti $O_{2.84}$ 세라믹스의 전도 carrier가 small polaron임을 의미한다. L $a_{2}$ 3/Ti $O_{2.84}$ 세라믹스는 실온 이하의 특정온도에서 variable range hopping에서 small polaron hopping으로 변화하였다. 저온영역에서는 직류전도 기구해석은 Mott의 접근방식을 이용하였다. Mott의 보조변수 해석결과 Fermi면에서의 상태밀도 [N( $E_{F}$)]는 3.18${\times}$$10^{20}$ $cm^{-3}$e $V^{-1}$이었으며, 무질서에너지 $W_{d}$는 0.93로 고온에서의 활성화 에너지 보다 매우 크다. 200K와 300K온도 범위에서 log($\sigma$T)와 1/T의 직선 관계가 존재 하였으며, small polaron의 hopping energy는 0.15 eV였다.

• 한국세라믹학회지
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• 제43권2호
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• pp.131-135
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• 2006

In this study, the dielectric, magnetic and transport properties of $Gd_{0.33}Sr_{0.67}FeO_3$ have been analyzed. The dielectric loss anomaly was found to be around 170 K. The activation energy corresponding to relaxation process of this dielectric anomaly was 0.17 eV. From the temperature dependence of the characteristic frequency, we concluded that the elementary process of the dielectric relaxation peak observed is correlated with polaron hopping between $Fe^{3+}\;and\;Fe^{4+}$ ions. The electrical resistivity displayed thermally activated temperature dependence above 200 K with an activation energy of 0.16 eV. In addition, the temperature dependence of thermoelectric power and resistivity suggests that the charge carrier responsible for conduction is strongly localized.

• 한국전기전자재료학회논문지
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• 제14권5호
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• pp.376-382
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• 2001

Magnetic and transport properties in the ceramic specimen of L $a_{0.7}$S $r_{0.3}$Fe $O_3$ with orthohombic structure has been investigated. Weak ferromagnetism has been observed in a ceramic sample of L $a_{0.7}$S $r_{0.3}$Fe $O_3$. Large dielectric relaxation of Debye type is observed in paramagnetic states within the temperature range of 130K~200K. From the temperature dependence of the characteristic frequency, we concluded that the elementary process of the dispersion is related to holes hopping between F $e^{3+}$ and F $e^{4+}$ ions. The temperature dependencies of thermoelectric power and Dc conductivity suggest that the charge carrier responsible for the conduction are strongly localized. These experimental results have been interpreted in terms of a hopping process involving small polaron.n.laron.n.

• 한국재료학회지
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• 제18권1호
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• pp.26-31
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• 2008

The dc resistivity and thermoelectric power of bilayered perovskite $La_{1.4}(Sr_{0.2}Ca_{1.4})Mn_2O_7$ were measured as a function of the temperature. In the ferromagnetic phase, ${\rho}(T)$ was accurately predicted by $a_0+a_2T^2+a_{4.5}T^{4.5}$ with and without an applied field. At high temperatures, a significant difference between the activation energy deduced from the electrical resistivity and thermoelectric power, a characteristic of small polarons, was observed. All of the experimental data can be feasibly explained on the basis of the small polaron.

• 대한화학회지
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• 제53권1호
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• pp.42-50
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• 2009

유전율-분광법과 교류 전도도 측정 연구를 망간이 혼입된 층상구조의 $Na_{1.9}Li_{0.1}Ti_3O_7$에 시도하였다. 373-723K 온도와 100Hz-1MHz 주파수 영역에서 loss 탄젠트 (Tan$\delta$), 상대적 유전율 ($\varepsilon_{r}$) 그리고 교류 전도 도 ($\sigma_{ac}$)의 의존성을 혼입 유도체들에 대하여 조사하였다. 다양한 전도도 메커니즘이 존재하는데 MSLT-1과 MSLT-2의 경우에는 낮은 온도영역에서 전자에 의한 전도도를 보인다. MSLT-3의 경우에는 금지된 층간 이온 전 도도가 전자 전도도와 함께 존재한다. 이러한 층간 이온 전도도는 모든 혼입 유도체들에 대하여 중간 온도 영역에 존재한다. 가장 높은 온도 영역에서는 MSLT-1과 MSLT-2의 경우에는 이온 전도도와 polaron에 의한 전도도가 존재하고 MSLT-3에 대하여는 이온 전도도 만이 존재한다. 망간이 혼입된 층상구조의 $Na_{1.9}Li_{0.1}Ti_3O_7$에서 Loss 탄젠트 (Tan$\delta$)는 전자 전도도와 쌍극자의 위치, 그리고 공간 전하 분극화에 기인한다. 상대적 유전율의 증가는 층간 에 쌍극자 수의 증가에 기인하고 반면 상대적 유전율의 감소는 높은 혼입율에 따른 누전 전류의 증가에 기인한다.

• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.776-782
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• 1996

The electrical properties of vapor deposition polymerized polymide thin films for getting an in-line system with manufacturing process of semiconductor device, have been studied. Polyimide thin films fabricated by vapor deposition polymerization(VDP) method based on PMDA and 4,4'-DDE monomer were confirmed by FT-IR spectra. It is found that the major conduction carriers of thin films are ions, and the hopping length of ions is almost same with monomer length at the temperature over 120.deg. C through the analysis of electrical conduction mechanism. Also, The activation energy is about 0.69 eV at the temperature of >$30^{\circ}C$ - >$150^{\circ}C$ and it is shown that the resistivity at which thin films can be used as an insulating film between layers of semiconductor device, is 3.2*10$^{15}$ .ohm.cm.

• 한국재료학회지
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• 제26권12호
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• pp.721-725
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• 2016

This work focuses on the electrical conduction mechanism in a lead free ($Na_{0.5}K_{0.5}NbO_3$ ; NKN) ceramics system with $LiNbO_3$ content of approximately critical concentration $x{\geq}0.2$. Lead free $(1-x)(Na_{0.5}K_{0.5})NbO_3-x(LiNbO_3)$, $NKN-LN_x$ (x = 0.1, 0.2) ceramics were synthesized by solid-state reaction method. Crystal structures are confirmed by X-ray diffraction. The electric-mechanical bond coefficient $k_p$ decreases and the phase transition temperature $T_c$ increases with increasing x content, as determined by dielectric and piezoelectric measurements. The value of the real dielectric constants ${\varepsilon}^{\prime}$ and $k_BT{\varepsilon}^{\prime\prime}$ showed anomalies around $T_c$ ($462^{\circ}C$ in the NKN-LN0.1 and $500^{\circ}C$ in the NKN-LN0.2). For the ionic conduction of mobile ions, the activation energies are obtained as $E_I=1.76eV$ (NKN-LN0.1) and $E_I=1.55eV$ (NKN-LN0.2), above $T_c$, and $E_{II}=0.78$ (NKNL-N0.1) and $E_{II}=0.81$ (NKN-LN0.2) below $T_c$. It is believed that the conduction mechanisms of NKN-LNx ceramics are related to ionic hopping conduction, which may arise mainly due to the jumping of $Li^+$ ions.

• 한국재료학회지
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• 제7권1호
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• pp.81-88
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• 1997

유리 형성제로 $B_{2}O_{3}$를 사용하고 CuO를 첨가한 vanadate계 3성분계 유리의 전기적 특성을 조사하였다. 각 조성별 결정화온도에서 열처리 시간을 다르게 하여 생성되는 결정상을 조사 하였으며, 결정화 특성에 따른 직류 전기 전도도의 변화를 분헉하였다. 생성 결정물은 XRD 분석결과 $V_{2}O_{5},\;{\alpha}-CuV_{2}O_{6}$로 판명 되었으며, 열처리 시간에 따라 $V_{2}O_{5}\;와\;{\beta}-CuV_{2}O_6$의 결정화도는 별다른 변화가 없었으나 ${\alpha}-CuV_{2}O_{6}$의 결정화도는 크게 변화하였고 ${\alpha}-CuV_{2}O_{6}$의 결정화도 증가에 따라 전기 전도도가 증가 하였다. 전기 전도도는 상온(303K)에서 유리 조성을 변화시켜 $10^{-2}~-10^{-4}{\Omega}^{-1}cm^{-1}$ 범위로 조절될수 있었다. $V_{2}O_{5}$ 함량이 증가할수록, 염기도($CuO/B_{2}O_{3}$)가 감소할수록 전기 전도도가 증가 하였다. 이 유리의 charge carrier는 전자인 n-type 반도체임이 seebeck coefficient 측정결과 판명되었으며, 전자 전도에 대한 활성화 에너지는 0.098-0.124eV로 계산되어졌다. 측정 온도인 $30~200^{\circ}C$에서 small polaron hopping conduction이 발생함이 관찰되었고, variable range hopping은 보이지 않았다.

• 한국전기전자재료학회논문지
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• 제21권7호
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• pp.615-619
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• 2008

A molecular memory device which has a structure of Al/$Al_2O_3$/ASA-15 LB monolayer/Ti/Al device, was fabricated. To study a charge transfer mechanism of molecular memory devices, current density-voltage (J-V) characteristics were measured at an increasing temperature range from 10 K to 300 K with an interval of 30 K. Strong temperature-dependent electrical property and tunneling through organic monolayer at low bias (below 0.5 V) were appeared. These experimental data were fitted by using a theoretical formula such as the Simmons model. In comparison between the theoretical and the experimental results, it was verified that the fitting results using the Simmons model about direct tunneling was fairly fitted below 0.5 V at both 300 K and 10 K. Hopping conduction was also dominant at all voltage range above 200 K due to charges trapped by defects located within the dielectric stack, including the $Al_2O_3$, organic monolayer and Ti interfaces.