• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.10-14
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• 2003

A low-cost, large area, random, maskless texturing scheme independent of crystal orientation is expected to have significant impact on terrestrial photovoltaic technology. We investigated silicon surface microstructures formed by reactive ion etching (R IE) in Multi-Hollow cathode system. Desirable texturing effect has been achieved when radio-frequency (rf) power of about 20 Watt per one hollow cathode glow is applied for our RF Multi -Hollow cathode system. The black silicon etched surface shows almost zero reflectance in the visible region as well as in near IR region. The etched silicon surface is covered by columnar microstructures with diameters from 50 to 100 nm and depth of about 500 nm. We have successfully achieved 11.7 % efficiency of mono-crystalline silicon solar cell and 10.2 % for multi-crystalline silicon solar cell.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.381-385
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• 2005

The plasma temperature of Ar gas in hollow cathode discharge were measured. This is done by measuring the line profile of the 1s/sub 8/-2p/sub 8/ transition in Ar, using a single-frequency diode laser. Low power diode lasers have been successfully used for investigation of the line profiles of Ar transitions in hollow cathode discharges. It turns out that the plasma temperature of Ar is 640∼783 K in the discharge current range at 7∼10 mA.

• Journal of the Korean Vacuum Society
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• v.11 no.2
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• pp.119-126
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• 2002

The optogalvanic signals were measured using hollow cathode discharge tube with argon as buffer gas at change of discharge currents. A change of ionization rate due to electron collision causes an increase or decrease of the electric conductivity, This change in electric conductivity generates the optogalvanic signal. We conclude that optogalvanic signal has close relation with change of the lowest metastable atoms density at low current.

• Journal of the Korean Graphic Arts Communication Society
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• v.23 no.2
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• pp.93-101
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• 2005

The measured plasma temperature of Ar hollow cathode discharge for several metal cathodes are about $620\;{\sim}\;780K$ at discharge current of $7\;{\sim}\;10mA$. The optogalvanic signals were measured using hollow cathode discharge tube with argon as buffer gas at change of discharge currents. A change of ionization rate due to electron collision causes an increase or decrease of the electric conductivity. This change in electric conductivity generates the optogalvanic signal. We conclude that optogalvanic signal has close relation with the lowest metastable atoms density at low current.

• 전기의세계
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• v.27 no.6
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• pp.49-53
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• 1978

This paper investigates on the electric input characterisitcs of plasma electron beam in H$_{2}$ gas chamber with various pressures, effected by the shape and dimension of hollow screen cathode during electron beam is formed. The result are as follows: (1)Electron beam is formed in the region of positive resistance on the characteristic curve which shows the relation between the voltage and current of electron beam, independent of the shape and dimension of hollow screen cathode. (2)At a given electron beam current, electron beam voltage increases with the decreases of hollow screen cathode length and screen mesh number of it. (3)At a given electron beam current, electron beam voltage increases with the diameters of hollow screen cathode and electron beam hole of it.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.2
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• pp.62-66
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• 2004

This paper investigated the characteristics of a newly developed high density hollow cathode plasma (HCP) system and its application for the etching of silicon wafers. We used SF$_{6}$ and $O_2$ gases in the HCP dry etch process. Silicon etch rate of $0.5\mu\textrm{m}$/min was achieved with $SF_6$$O_2$plasma conditions having a total gas pressure of 50mTorr, and RF power of 100 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. The results of this experiment can be used for various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications.s.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.05a
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• pp.150-151
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• 1998

• Transactions on Electrical and Electronic Materials
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• v.10 no.6
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• pp.212-216
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• 2009

The spatial distribution of the optogalvanic (OG) signal in argon at the 801.489 nm ($1s_5-2p_8$ transition at the metastable level in Paschen notation) was investigated in the radial direction of a hollow cathode discharge tube. The results of this experiment showed that the OG signal amplitude decreases in accordance with the following two conditions; first, the level of discharge current and second, the distance from the cathode dark space. These results can be quantified by analyzing the electron density profile along the discharge regions, which can directly influence the collisional ionization induced by electron impact.

• Analytical Science and Technology
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• v.15 no.6
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• pp.502-508
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• 2002

See-through hollow cathode glow discharge cell has been developed for the trace analysis of metal ions. The systems consists of new glow discharge cell improved the cooling system. In the case of previous type of hollow cathode glow discharge cell, it had been utilized for the trace analysis of metal ions but it had a problem that the plasma becomes unstable by air-cooled device. In this study, the modified hollow cathode glow discharge cell has been developed in order to minimize the problem associated with the air-cooled device. thus the stability of the plasma with water-cooling device has been improved and also the higher plasma temperature has been measured. The fundamental characteristics of modified systems have been investigated. And the discharge parameters, such as discharge pressure, material, and diameter of cathode, have been studied to find optimum discharge conditions.

• Journal of the Korean Chemical Society
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• v.42 no.3
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• pp.323-327
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• 1998