• Transactions on Electrical and Electronic Materials
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• 제4권5호
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• pp.10-14
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• 2003

A low-cost, large area, random, maskless texturing scheme independent of crystal orientation is expected to have significant impact on terrestrial photovoltaic technology. We investigated silicon surface microstructures formed by reactive ion etching (R IE) in Multi-Hollow cathode system. Desirable texturing effect has been achieved when radio-frequency (rf) power of about 20 Watt per one hollow cathode glow is applied for our RF Multi -Hollow cathode system. The black silicon etched surface shows almost zero reflectance in the visible region as well as in near IR region. The etched silicon surface is covered by columnar microstructures with diameters from 50 to 100 nm and depth of about 500 nm. We have successfully achieved 11.7 % efficiency of mono-crystalline silicon solar cell and 10.2 % for multi-crystalline silicon solar cell.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.381-385
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• 2005

The plasma temperature of Ar gas in hollow cathode discharge were measured. This is done by measuring the line profile of the 1s/sub 8/-2p/sub 8/ transition in Ar, using a single-frequency diode laser. Low power diode lasers have been successfully used for investigation of the line profiles of Ar transitions in hollow cathode discharges. It turns out that the plasma temperature of Ar is 640∼783 K in the discharge current range at 7∼10 mA.

• 한국진공학회지
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• 제11권2호
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• pp.119-126
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• 2002

Hollow cathode discharge(HCD)에서 알곤 기체를 완충 기체로 사용하여 전류 변화에 따른 광검류 신호를 측정하였다. 광검류 신호는 방전의 전기 전도도의 증가 또는 감소에 의해 나타나며 전기 전도도의 변화는 전자 충돌에 의한 이온화율의 변화에 의해 일어난다. 낮은 방전 전류에서 광검류 신호는 가장 낮은 준안정 준위 원자의 밀도 변화와 밀접한 관계가 있다는 결론을 얻었다.

• 한국인쇄학회지
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• 제23권2호
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• pp.93-101
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• 2005

The measured plasma temperature of Ar hollow cathode discharge for several metal cathodes are about $620\;{\sim}\;780K$ at discharge current of $7\;{\sim}\;10mA$. The optogalvanic signals were measured using hollow cathode discharge tube with argon as buffer gas at change of discharge currents. A change of ionization rate due to electron collision causes an increase or decrease of the electric conductivity. This change in electric conductivity generates the optogalvanic signal. We conclude that optogalvanic signal has close relation with the lowest metastable atoms density at low current.

• 전기의세계
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• 제27권6호
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• pp.49-53
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• 1978

This paper investigates on the electric input characterisitcs of plasma electron beam in H$_{2}$ gas chamber with various pressures, effected by the shape and dimension of hollow screen cathode during electron beam is formed. The result are as follows: (1)Electron beam is formed in the region of positive resistance on the characteristic curve which shows the relation between the voltage and current of electron beam, independent of the shape and dimension of hollow screen cathode. (2)At a given electron beam current, electron beam voltage increases with the decreases of hollow screen cathode length and screen mesh number of it. (3)At a given electron beam current, electron beam voltage increases with the diameters of hollow screen cathode and electron beam hole of it.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권2호
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• pp.62-66
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• 2004

This paper investigated the characteristics of a newly developed high density hollow cathode plasma (HCP) system and its application for the etching of silicon wafers. We used SF$_{6}$ and $O_2$ gases in the HCP dry etch process. Silicon etch rate of $0.5\mu\textrm{m}$/min was achieved with $SF_6$$O_2$plasma conditions having a total gas pressure of 50mTorr, and RF power of 100 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. The results of this experiment can be used for various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications.s.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1998년도 춘계학술발표회 초록집
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• pp.150-151
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• 1998

• Transactions on Electrical and Electronic Materials
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• 제10권6호
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• pp.212-216
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• 2009

The spatial distribution of the optogalvanic (OG) signal in argon at the 801.489 nm ($1s_5-2p_8$ transition at the metastable level in Paschen notation) was investigated in the radial direction of a hollow cathode discharge tube. The results of this experiment showed that the OG signal amplitude decreases in accordance with the following two conditions; first, the level of discharge current and second, the distance from the cathode dark space. These results can be quantified by analyzing the electron density profile along the discharge regions, which can directly influence the collisional ionization induced by electron impact.

• 분석과학
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• 제15권6호
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• pp.502-508
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• 2002

관통형 속빈 음극관 글로우 방전 (See-through hollow cathode glow discharge)셀을 이용한 미량 및 극미량 분석을 가능한 분광 분석 장치를 개발하였다. 이 장치는 기존의 관통형 속빈 음극관 글로우 방전 셀을 개선하기 위하여 수냉식 냉각 장치를 부착한 새로운 방전 셀의 형태로 개발하였다. 기존의 방전 셀로 미량 및 극미량 분석은 가능하였지만, 공랭식 냉각장치로도 플라즈마의 온도를 높이는 데 한계가 있으며, 단 시간에 플라즈마가 불안정해지는 문제점이 발생하였다. 이러한 문제점을 개선하기 위해서 본 장치에서는 수냉식 냉각 방식을 채택하여 플라즈마의 안정성을 높였으며, 플라즈마 온도를 증가시킬 수 있다. 개선된 방전 셀의 기초 연구를 위해 속빈 음극관의 재질 및 구경변화에 따른 방전 전력 및 압력에 관련한 연구를 하였으며, 속빈 음극관의 구경의 변화에 따른 플라즈마 온도 변화에 대해 측정하였다.

• 대한화학회지
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• 제42권3호
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• pp.323-327
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• 1998