• Current Applied Physics
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• v.18 no.12
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• pp.1583-1591
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• 2018

We analysed perovskite $CH_3NH_3PbI_{3-x}Cl_x$ inverted planer structure solar cell with nickel oxide (NiO) and spiroMeOTAD as hole conductors. This structure is free from electron transport layer. The thickness is optimized for NiO and spiro-MeOTAD hole conducting materials and the devices do not exhibit any significant variation for both hole transport materials. The back metal contact work function is varied for NiO hole conductor and observed that Ni and Co metals may be suitable back contacts for efficient carrier dynamics. The solar photovoltaic response showed a linear decrease in efficiency with increasing temperature. The electron affinity and band gap of transparent conducting oxide and NiO layers are varied to understand their impact on conduction and valence band offsets. A range of suitable band gap and electron affinity values are found essential for efficient device performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1002-1006
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• 2004

The studies on OLED(Organic Light-Emitting Diode) materials and structures have been researched in other to improve luminescence efficiency of OLED. Electrons and holes are injected into the devices, transported across the layer and recombine to form excitons, their profiles are sensitive to mobility velocity of electrons and holes. A suggested means of improving the efficiency of LEDs would be to balance the injection of electrons and holes into light emission layer of the device. In this paper, we demonstrate the difference of velocity between hole and electron by experiments, and compare with a data of simulation and experiment changing hole carrier transport layer thickness, so we get the optimal we improve luminescence efficiency. We improve understanding of the various luminescence efficiency through experiments and numerical analysis of luminescence efficiency in the hole carrier transport layer's thicknes.

• Korean Journal of Materials Research
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• v.15 no.7
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• pp.448-452
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• 2005

This study was based on organic electroluminescence display. Especially, TPD and $\alpha-NPD$ for the hole transport materials were synthesized by Ullmann reaction. This reaction was conducted between 3­methylphenylamine, 1-naphthylamine and 4,4'-diiodobiphenyl in toluene containing CuCl catalyst and KOH base. The structural property of reaction products were analyzed by FT-IR, $^1H-NMR$ spectroscopy, and thermal stability, reactivity and PL property were analyzed by melting point, yield and emission spectrum, respectively. The photoluminescence spectra of a pure TPD and $\alpha-NPD$ were observed at approximately 416nm and 438nm respectively. In this study, it was known that the melting point, yield, PL properties of TPD and $\alpha-NPD$ were changed by substituent group of amines.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1103-1107
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• 2007

Highly efficient organic electroluminescent devices (OLEDs) based on 4,7- diphenyl-1, 10- phenanthroline (BPhen) as the electron transport layer (ETL), tris (8-hydroxyquinoline) aluminum ($Alq_3$) as the emission layer (EML) and N,$\acute{N}$-bis-[1-naphthy(-N,$\acute{N}$diphenyl-1,1´-biphenyl-4,4´-diamine)] (NPB) as the hole transport layer (HTL) were developed. The typical device structure was glass substrate/ ITO/ NPB/$Alq_3$/ BPhen/ LiF/ Al. Since BPhen possesses a considerable high electron mobility of $5\;{\times}\;10^{-4}\;cm^2\;V^{-1}\;s^{-1}$, devices with BPhen as ETL can realize an extremely high luminous efficiency. By optimizing the thickness of both HTL and ETL, we obtained a highly efficient OLED with a current efficiency of 6.80 cd/A and luminance of $1361\;cd/m^2$ at a current density of $20\;mA/cm^2$. This dramatic improvement in the current efficiency has been explained on the principle of charge balance.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.814-816
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• 2009

We have investigated the effect of host on the device charactistics of green phosphorescent organic light emitting devices consising of mCP, CBP and TPBi. Electrons were confined within the device by inserting hole transport layer between the electro transport and the emitting layer. When the appropriate interlayers were added, the device with TPBI host layer performances were found to be dramatically enhanced, with current efficiency and lifetime of 18cd/A and 18hour.

• Journal of the Korean Ceramic Society
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• v.55 no.4
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• pp.325-336
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• 2018

Perovskite solar cells (PSCs) are a new class of photovoltaic devices, which have attracted significant attention due to their remarkable optoelectrical properties, including high absorption coefficients, high carrier mobilities, long carrier diffusion lengths, tunable bandgaps, low cost, and facile fabrication. PSCs have reached efficiencies of 22.70% and 18.36% on rigid fluorine-doped tin oxide and poly(ethylene terephthalate) substrates, respectively; these are comparable to those of single-crystal silicon and copper-indium-gallium-selenium solar cells. Over the past eight years, the photo conversion efficiency of PSCs has been significantly improved by device-architecture adjustments, and absorber and electron/hole transport layer optimization. Each layer is important for the performance of PSCs; hence, we discuss achievements in flexible perovskite solar cells (FPSCs), covering electron/hole-transport materials, electrode materials. We give a comprehensive overview of FPSCs and put forward suggestions for their further development.

• Transactions on Electrical and Electronic Materials
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• v.8 no.6
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• pp.250-254
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• 2007

Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.

• Journal of Information Display
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• v.12 no.4
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• pp.223-227
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• 2011

Electrophosphorescent devices with ionomer-type hole transport layers were investigated. On top of the 3,4-ethylenedioxy thiophene:poly(4-styrene sulfonate) [PEDOT:PSS] structures, fluoropolymer interfacial layers (FPIs) with different side chain lengths were introduced. Both for the PEDOT:PSS/FPI (layered) and PEDOT:PSS (mixed) structures with soluble phosphorescent emitters, the short-side-chain FPIs showed higher efficiency. The difference in the electrical properties of the two FPIs for bipolar (light-emitting) devices was not clear, but the hole-only device clearly showed the favored hole injection at the PEDOT:PSS/FPI structure with a shorter side chain, a copolymer of tetrafluoroethylene and sulfonyl fluoride vinyl ether.

• Transactions on Electrical and Electronic Materials
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• v.18 no.2
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• pp.89-92
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• 2017

The performance of three-layered organic light-emitting diodes (OLEDs) was investigated using TPD hole-transport and injection layers, Teflon-AF, and the electron-injection layer of $Li_2CO_3$ and LiF. The OLEDs were manufactured in a structure of TPD/$Alq_3$/LiF, TPD/$Alq_3$/$Li_2CO_3$, and AF/$Alq_3$/LiF using low-molecular organic materials. In three different three-layered OLEDs, it was found that the device with the TPD/$Alq_3$/LiF structure shows higher performance in maximum luminance, and maximum external quantum efficiency compared to those of the device with TPD/$Alq_3$/$Li_2CO_3$ and TPD/$Alq_3$/LiF by 35% and 17%, and 193% and 133%, respectively. It is thought that the combined LiF/Al cathode contributes to a reduced work function and improves an electrical conduction mechanism due to the electron injection rather than the hole transport, which then increases a recombination rate of charge carriers.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.432.2-432.2
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• 2014

Recently, colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED)[1]. In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier[2] instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QD LED, two kinds of hybrid organic materials, [poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo)(F8BT) + poly(N,N'-bis (4-butylphenyl)-N,N'-bis(phenyl)benzidine (poly-TPD)] and [4,4'-N,N'-dicarbazole-biphenyl (CBP) + poly-TPD], were adopted as hole transport layer having high highest occupied molecular orbital (HOMO) level for improving hole transport ability. At a low-operating voltage of 8 V, the device emits orange and red spectral radiation with high brightness up to 2450 and 1420 cd/m2, and luminance efficacy of 1.4 cd/A and 0.89 cd/A, respectively, at 7 V applied bias. Also, the carrier transport mechanisms for the QD LEDs are described by using several models to fit the experimental I-V data.