• Korean Chemical Engineering Research
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• v.49 no.3
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• pp.297-300
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• 2011

High energy proton irradiations were performed on graphene devices to increase the number of defects intentionally. Proton energy and fluence were 6 MeV and $5{\times}10^{15}\;cm^{-2}$, respectively. The defects in few layer graphene layer created by proton irradiations captured oxygen molecules that acted as p-type dopants. After the vacuum annealing, hole mobility was enhanced by the recovery of the defects and the desorption of the oxygen molecules. However, the drain current decreased after vacuum annealing due to the removal of the dopant molecules.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.150.2-150.2
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• 2015

In this study, we analyzed the electric and optical characteristics by using various deposition rate ($0.5{\AA}$, $1.0{\AA}$ and $1.5{\AA}/s$) in order to enhance the performance in organic light-emitting devices (OLED). The organic multi-layer structures were deposited with NPB ($500{\AA}$ as hole transport layer), Alq3 ($600{\AA}$ as electron transport layer and emission layer) and LiF ($8{\AA}$ as electron injection layer) via SUNIC PLUS200 on Glass/ITO substrates. In this experiment, we examined the relationship between porous state of organic deposition and mobility of the organic materials. Among the three deposition rates, $0.5{\AA}/s$ achieved the highest performance of (10,786cd/m2, 4.387cd/A) comparing with that of $1{\AA}/s$ (7,779cd/m2, 3.281cd/A) and $1.5{\AA}/s$ (5,167cd/m2, 2.693cd/A). We confirmed that low deposition rate helps to arrange organic materials densely and to move easily another atomic location using inter-chain transporting by orbital overlap.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.611-617
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• 2006

We report the preparation of N doped, p-type ZnO films by post-annealing in $NH_3$ ambient. The properties were examined by XRD, Hall-effect measurement, PL, and SIMS. ZnO films showed better crystallinity and electron concentration of $10^{15}-10^{17}/cm^3$ with post-annealing in $NH_3$ ambient. These films were converted to p-type ZnO by activation thermal annealing process at $800^{\circ}C$ under $N_2$ ambient. The electrical properties of the p-type ZnO showed a hole concentration of $1.06\times10^{16}/cm^3$, a mobility of $15.8cm^2/V{\cdot}s$, and a resistivity of $40.18\Omega{\cdot}cm$. The N doped ZnO films showed a strong photoluminescence peak at 3.306 eV at 13 K, which is closely related to neutral acceptor bound excitons of the p-type ZnO:N. In the SIMS spectra, the incorporation of nitrogen was confirmed.

• Rapid Communication in Photoscience
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• v.4 no.4
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• pp.82-85
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• 2015

Photoelectrochemical cell (PEC) is one of the attractive ways to produce clean and renewable energy. However, solar to hydrogen production via PEC system generally requires high external bias, because of material's innate electronic band potential relative to hydrogen reduction potential and/or charge separation issue. For spontaneous photo-water splitting, here, we design dye-sensitized solar cell (DSSC) and their monolithic tandem cell incorporated with a $BiVO_4$ photoanode. $BiVO_4$ has high conduction band edge potential and suitable band gap (2.4eV) to absorb visible light. To achieve efficient $BiVO_4$ photoanode system, electron and hole mobility should be improved, and we demonstrate a tandem cell in which $BiVO_4/WO_3$ film is connected to cobalt complex based DSSC.

• Advances in Energy Research
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• v.4 no.4
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• pp.275-284
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• 2016

In the present work, ZnO nanoparticles (NPs) have been dispersed alone in the same solvent of the active layer for improving performance parameters of the organic solar cells. Different concentrations of the ZnO NPs have been blended inside active layer of the solar cell based on poly(3-hexylthiophene) (P3HT), which forms the hole-transport network, and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), which forms the electron-transport network. In the present investigations, the ZnO NPs may represent an efficient tool for improving light harvesting through light scattering inside active layer, electron mobility, and electron acceptance strength which tend to improve photocurrent and performance parameters of the investigated solar cell. The fill factor (FF) of the ZnO-doped solar cell increases nearly 14% compared to the non-doped solar cell when the doping is 50%. The present investigations show that ZnO NPs improve power conversion efficiency of the solar cell from 1.23% to 1.64% with increment around 25% that takes place after incorporation of 40% as a volume ratio of the ZnO NPs inside P3HT:PCBM active layer.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.675-678
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• 2003

We studied the electrical characteristics of pentacene-based organic field-effect transistors (FETs) with polymethyl methacrylate (PMMA) or poly-4-vinylphenol (PVP) as the gate insulator. PMMA or PVP was spin-coated on the indium tin oxide glass substrate that serves as gate electrodes. The source-drain current dependence on the gate voltage shows the FET characteristics of the hole accumulation type. The transistor with PVP shows a higher field-effect mobility of 0.14 $cm^{2}/Vs$ compared with 0.045 $cm^{2}/Vs$ for the transistor with PMMA. The atomic force microscope (AFM) images indicate that the grain size of the pentacene on PVP is larger than that on PMMA. X-ray diffraction (XRD) patterns for the pentacene deposited on PVP exhibit a new Bragg reflection at $19.5{\pm}0.2^{\circ}$, which is absent for the pentacene on PMMA. This peak corresponds to the flat-lying pentacene molecules with less intermolecular spacing.

• Journal of Information Display
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• v.10 no.3
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• pp.125-130
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• 2009

The new organic semiconductor, which is composed of a divinylbenzene core unit and alkoxynaphthalene on both sides, 1,4-bis-2-(6-hexyloxy)naphthalen-2-yl-vinylbenzene, was synthesized via Wittig reaction. The obtained oligomer was characterized via FT-IR, mass and elemental analysis, UV-visible spectroscopy, cyclovoltammetry, differential scanning calorimetry (DSC), and thermogravimetric analysis (TGA). The vacuum-evaporated film was characterized via X-ray diffraction and atomicforce microscopy (AFM). It formed a highly ordered polycrystalline vacuum-evaporated film and exhibited a good field-effect performance, with a hole mobility of $0.015cm^2/V{\cdot}s$, an on/off ratio of $1.18{\times}10^5$, and a subthreshold slope of 0.69 V when it was deposited at Ts=$90^{\circ}C$ on HMDS-treated $SiO_2$.

• Electrical & Electronic Materials
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• v.8 no.3
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• pp.298-305
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• 1995

Copper-indium diselenide, $CuInSe_2$, thin films have been fabricated by selenizing Cu/In stacked layers with different sputtered Cu/(Cu+ln) mole ratios at 450.deg. C for 1hr on alumina substrates. The selenium source was selenium vapor. Microstructure, crystallization, and composition of the selenized $CuInSe_2$ films were examined by using scanning electron microscope, X-ray diffraction, Auger electron spectroscopy, and secondary ion mass spectrometry. Electrical resistivity and hall effects were also measured to investigate the electrical properties. As the sputtered Cu/(Cu+In) mole ratio of In/Cu layer increased, the amounts of void and CuSe phase in the selenized films increased but the composition of $CuInSe_2$ phase was the same regardless of the sputtered mole ratio. Comparing the electrical properties of $CuInSe_2$ thin film before and after the chemical etching, it was seen that the electrical resistivity, carrier concentration, and carrier mobility of the selenized films were affected by the amount of CuSe phase which seemed to increase primarily the hole concentration of the selenized films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.129-129
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• 2010

The conjugated oligomers with rigid and fused-ring structures are of interest for the solution-processable organic thin film transistors (OTFTs) due to their well defined structure and high purity. In this study, alkyl substituted benzothiophene based oligomers were synthesized by a novel route, the key point of which is the acid-induced intermolecular cyclization reaction of aromatic methyl sulfoxides, and were confirmed by $^1H$-NMR and FT-IR studies. The obtained oligomers showed the good solubility in common organic solvents such as hexane, chloroform, and dimethylchloride at room-temperature, which is due to the introduced alkyl chain. The physical and optical properties of the oligomers were studied using differential scanning scalorimetry (DSC), cyclic-voltammetry (CV), UV-visible and PL spectra studies. Solution processed OTFT device based on synthesized oligomers show a high hole mobility of up to $0.01\;cm^2V^{-1}s^{-1}$, $I_{on}/I_{off}$ of $10^5$ and threshold voltage of -14V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.9
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• pp.701-706
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• 2013

We have focused on the conversion efficiency of CIGS thin film solar cell prepared by co-evaporation method as well as the optimization of process condition. The total thickness of back electrode was fixed at 1 ${\mu}m$ and the structural, electric and optical properties of CIGS thin film were investigated by varying the thickness of Mo:Na bottom layer from 0 to 500 nm. From the experimental results, the content of Na was appeared as 0.28 atomic percent when the thickness of Mo:Na layer was 300 nm with compactly densified plate-shape surface morphology. From the XRD measurements, (112) plane was the strongest preferential orientation together with secondary (220) and (204) planes affecting to the crystallization. The lowest roughness and resistivity were 2.67 nm and 3.9 ${\Omega}{\cdot}cm$, respectively. In addition, very high carrier density and hole mobility were recorded. From the optimization of Mo:Na layer, we have achieved the conversion efficiency of 9.59 percent.