Browse > Article
http://dx.doi.org/10.9713/kcer.2011.49.3.297

High-energy Proton Irradiated Few Layer Graphene Devices  

Kim, Hong-Yeol (Department of Chemical and Biological Engineering, Korea Universiy)
Kim, Ji-Hyun (Department of Chemical and Biological Engineering, Korea Universiy)
Publication Information
Korean Chemical Engineering Research / v.49, no.3, 2011 , pp. 297-300 More about this Journal
Abstract
High energy proton irradiations were performed on graphene devices to increase the number of defects intentionally. Proton energy and fluence were 6 MeV and $5{\times}10^{15}\;cm^{-2}$, respectively. The defects in few layer graphene layer created by proton irradiations captured oxygen molecules that acted as p-type dopants. After the vacuum annealing, hole mobility was enhanced by the recovery of the defects and the desorption of the oxygen molecules. However, the drain current decreased after vacuum annealing due to the removal of the dopant molecules.
Keywords
Proton Irradiation; Graphene;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Lee, C., Wei, X., Kysar, J. W. and Hone, J., "Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene," Science, 321, 385-388(2008).   DOI   ScienceOn
2 Balandin, A. A., Ghosh S., Bao, W., Calizo, I., Teweldebrhan, D., Miao, F. and Lau, C. N., "Superior Thermal Conductivity of Single- layer Graphene," Nano. Lett. 8, 902-907(2008).   DOI   ScienceOn
3 Berger, C., Song, Z., Li, X., Wu, X., Brown, N., Naud, C., Mayou, D., Li, T., Hass, J., Marchenkov, A. N., Conrad, E. H., First, P. N. and Heer, W. A., "Electronic Confinement and Coherence in Patterned Epitaxial Graphene," Science, 312, 1191-1195 (2006).   DOI   ScienceOn
4 Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V., Grigorieva, I. V. and Firsov, A. A., "Electric Field Effect in Atomically Thin Carbon Films," Science, 306, 666-669(2004).   DOI   ScienceOn
5 Eda, G., Fanchini, G. and Chhowalla, M., "Large-area Ultrathin Films of Reduced Graphene Oxide as a Transparent and Flexible Electronic Material," Nat. Nanotechnol. 3, 270-274(2008).   DOI   ScienceOn
6 Wang, X., Zhi, L. and Mullen, L., "Transparent, Conductive Graphene Electrodes for Dye-sensitized Solar Cells," Nano. Lett. 8, 323-327 (2008).   DOI   ScienceOn
7 Hummers, W. S. and Offeman, J. R. E., "Preparation of Graphitic Oxide," J. Am. Chem. Soc. 80, 1339(1958).   DOI
8 Gu, G., Nie, S., Feenstra, R. M., Devaty, R. P., Choyke, W. J., Chan, W. K. and Kane, M. G., "Field Effect in Epitaxial Graphene on a Silicon Carbide Substrate," Appl. Phys. Lett. 90, 253507 (2007).   DOI   ScienceOn
9 Reina, A., Jia, X., Ho, J., Nezich, D., Son, H., Bulovic, V., Dresselhaus, M. and Kong, J., "Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition," Nano. Lett. 9, 30-35(2009).   DOI   ScienceOn
10 Kim, K. S., Zhao, Y., Jang, H., Lee, S. Y., Kim, J. M., Kim, K. S., Ahn, J.-H., Kim, P., Choi, J.-Y. and Hong, B. H., "Large-scale Pattern Growth of Graphene Films for Stretchable Transparent Electrodes," Nature, 457, 706-710(2009).   DOI   ScienceOn
11 Zhang, Y.-H., Chen, Y.-B., Zhou, K.-G., Liu, C.-H., Zeng, J., Zhang, H.-L. and Peng, Y., "Improving Gas Sensing Properties of Graphene by Introducing Dopants and Defects: a First-principles Study," Nanotechnology, 20, 185504(2009).   DOI   ScienceOn
12 Claeys, C. and Simoen, E., "Radiation Effects in Advanced Semiconductor Materials and Devices," Springer, Berlin, 2002.
13 Compagnini, G., Giannazzob, F., Sonde, S., Raineri, V. and Rimini, E., "Ion Irradiation and Defect Formation in Single Layer Graphene," Carbon, 47, 3201-3207(2009).   DOI   ScienceOn
14 Teweldebrhan, D. and Balandin, A. A., "Modification of Graphene Properties Due to Electron-beam Irradiation," Appl. Phys. Lett., 94, 013101(2009).   DOI   ScienceOn
15 Kim, K., Choi, J., Lee, H., Lee, H.-K., Kang, T.-H., Han, Y.-H., Lee, B.-C., Kim, S. and Kim, B., "Effects of 1 MeV Electron Beam Irradiation on Multilayer Graphene Grown on 6H-SiC(0001)," J. Phys. Chem. C 112, 13062-13064(2008).   DOI   ScienceOn
16 Ko, G., Kim, H.-Y., Ren, F., Pearton, S. J. and Kim, "Electrical Characterization of 5MeV Proton-Irradiated Few Layer Graphene," J. Electrochem. Sol.-Stat. Lett., 13, K32-K34(2010).   DOI   ScienceOn