• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.61-66
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• 2018

This research scrutinizes the self-annealing characteristics of copper used to metal interconnection for application of DRAM fabrication process. As the time goes after the copper deposited, the grain of copper is growing. It is called self-annealing. We use the electroplating method for copper deposition and estimate two kinds of electroplating chemicals having different organic additives. As the time of self-annealing is elapsed, sheet resistance decreases with logarithmic dependence of time and is finally saturated. The improvement of sheet resistance is approximately 20%. The saturation time of experimental sample is shorter than that of reference sample. We can find that self-annealing is highly efficient in grain growth of copper through the measurement of TEM analysis. The structure of copper grain is similar to the bamboo type useful for current flow. The results of thermal excursion characteristics show that the reliability of self-annealed sample is better than that of sample annealed at higher temperature. The self-annealed sample is not contained in hillock. The self-annealed samples grow until $2{\mu}m$ and develop in [100] direction more favorable for reliability.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.73-73
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• 2000

안티퓨즈 소자는 프로그램 가능한 절연층의 상하 각각에 금속층이나 다결정 실리콘 등의 전도 가능한 전극으로 구성된다. 프로그램은 상하 전극간에 임계전압을 가했을 때 일어나게 되며 이때 절연층이 파괴되므로 비가역적이어서 재사용은 불가능하게 된다. 안티퓨즈 소자는 이러한 프로그램 특성으로 인하여 메모리 소자를 이용한 스위치 보다 속도나 집적도 면에서 우수하다. FPGAsdp 사용되는 안티퓨즈 소자는 집적도의 향상과 적정 절열파괴전압 구현을 위해 절연막의 두께를 감소시키는 것이 바람직하다. 그러나 두께나 감소될 경우 바닥전극의 hillock에 큰 영향을 받게 되며, 그로 인해 절연막의 두께를 감소시키는 것는 한계가 있는 것으로 보고되어 있다. 본 논문에서는 낮은 구동 전압에서 동작하고 안정된 on/pff 상태를 갖는 Al/TiO2-SiO2/Mo 형태의 안티퓨즈 소자를 제안하였다. 만들어진 antifuse cell은 0.6cm2 크기로 약 300개의 샘플을 제작하여 측정하였다. 비저항이 6-9 $\Omega$-cm인 P형의 실리콘 웨이퍼에 RF 마그네트론 스퍼터링(RF magnetron sputtering) 방법으로 하부전극인 Mo를 3000 증착하였다. SiO2는 안티퓨즈에서 완충막의 역할을 하며 구조적으로 antifuse cell을 완전히 감싸고 있는 형태로 제작되었다. 완충막 구조를 만들기 dln해 일반적인 포토리소그라피(Photo-lithography)작업을 거처 형성하였다. 형성된 hole의 크기는 5$mu extrm{m}$$\times$5$\mu\textrm{m}$ 이었다. 완충막이 형성된 기판위에 안티퓨즈 절연체인 SiO2를 PECVD 방식으로 100 증착하였다. 그 후 이중 절연막을 형성시키기 위해 LPCVD를 이용하여 TiO2를 150 증착시켰다. 상부 전극은 thermal evaporation 방식으로 Al을 250nm 증착하여Tejk. 하부전극으로 사용된 Mo 금속은 표면상태가 부드럽고 녹는점이 높은 매우 안정된 금속으로, 표면위에 제조된 SiO2의 특성을 매우 안정되게 유지시켰다. 제안된 안티푸즈는 이중절연막을 증착함으로서 전체적인 절연막의 두께를 증가시켜 바닥전극의 hillock의 영향을 적게 받아 안정성을 유지할 수 있도록 하였다. 또한, 두 절연막 사이의 계면 반응에 의해 SiO2 막을 약화시켜 절연막의 두께가 두꺼워졌음에도 기존의 SiO2 절연막의 절연 파괴 전압 및 누설 전류오 비교되는 특성을 가졌다. 이중막을 구성하고 있는 안티퓨즈의 ON-저항이 단일막과 비교해 비슷한 것을 볼 수 잇는데, 그 이유는 TiO2에 포함된 Ti가 필라멘트에 포함되어 있어 필라멘트의 저항을 감소시켰기 때문으로 사료된다. 결국 이중막을 구성시 ON-저항 증가에 의한 속도 저하 요인은 없다고 할 수 있다. 5V의 절연파괴 시간을 측정한느 TDDB 테스트 결과 1.1$\times$103 year로 기대수치인 수십 년보다 높아 제안된 안티퓨즈의 신뢰성을 확보 할 수 있었다. 제안된 안티퓨즈의 이중 절연막의 두께는 250 이고 프로그래밍 전압은 9.0V이고, 약 65$\Omega$의 on 저항을 얻을수 있었다.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.442-446
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• 2003

Tin dioxide ($SnO _2$) thin films were deposited at $375^{\circ}C$ on alumina substrate by metal-organic chemical vapor deposition. A few hillocks like a cauliflower were observed and the number of hillock on thin film surface increased with annealing temperature in air atmosphere. The oxygen content and the binding energy during air annealing at$ 500^{\circ}C$ came to close the stoichiometric $SnO_2$. The cauliflower hillocks seem to be the result of the continuous migration of the tiny grains to release the stress of an expanded grain. Sensitivity of CO gas depended on annealing temperature and increased with increasing annealing temperature.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.249-255
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• 2002

For a formation of membrane structures, single crystal silicon wafers have been anisotropically etched with solutions of KOH and KOH-IPA. The etching rate was observed to be strongly dependent upon the etchant temperature and concentration. Mask patterns for the etching experiment was aligned to incline $45^{\circ}$on the primary flat of the silicon wafer. The different etching characteristics were observed according to pattern directions and etchant concentration. When the KOH concentration was fixed to 20 wt%, the U-groove etching shape was observed for the etching temperature of above $80^{\circ}C$, and V-groove shapes observed at below $80^{\circ}C$. Hillocks, which were generated at the etched silicon surfaces, has been decreased as the increasing of the etchant temperature and concentration.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.246-246
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• 1999

TFT-LCD 제조공정의 발전에 따라, 박막층(a-Si, SiNx, gate 전극, ITO 등)에 대한 습식공정을 대치하는 건식식각이 선호되고 있다. scan signal의 전파지연시간을 단축시키는 장점을 갖는 Al gate 전극의 건식식각의 경우, 높은 식각속도와 slope angle의 조절, 그리고 식각균일도가 요구된다. 이러한 Al gate 전극물질로는 Al에 Ti이나 Nd와 같은 금속을 첨가하여 post annealing 동안에 발생하는 hillock을 방지하고 더불어 낮은 resistivity(<10$\mu$$\Omega$cm)와 열과 부식에 대한 높은 저항성을 얻을 수 있다. 그러나 Al-Nd alloy 박막은 식각속도와 photoresist에 대한 식각선택도가 낮아 문제로 지적되고 있다. 본 실험에서는 고밀도 플라즈마원의 일종인 자화된 고밀도 유도결합형 플라즈마를 이용하여 식각가스 조합, inductive power, bias voltage 그리고 공정압력 등의 다양한 공정변수에 따른 Al-Nd film의 기본적인 식각특성 변화를 관찰하였다. 식각시 chloring gas를 주요 식각가스로 사용하고 BCl, HBr 등을 10mTorr의 일정한 압력을 유지하는 조건하에서 첨가하였으며 inductive power는 5100W~800W, bias voltage는 -50V~-200V까지 변화를 주었다. 식각공정의 전후를 통하여 Al-Nd 박막표면의 조성변화를 관찰하기 위하여 X-ray photoelectron spectroscopy(XPS)를 이용하였으며 공정변수에 따른 식각후 profile 관찰은 scanning electron microscopy(SEM)을 통하여 관찰하였다. Al-Nd 식각속도는 100% Cl2 플라즈마에 비해 BCl3의 양이 증가할수록 증가하였으며 75%의 BCl3 gas를 첨가하였을 때 가장 높은 식각속도를 얻을 수 있었다. 또한 SEM을 이용한 표면분석으로 roughness가 감소된 공정조건을 찾을 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.12-16
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• 2005

Chemical mechanical polishing (CMP) process is one of the most useful methods for improving the surface roughness of films. The effects of CMP on the surface morphology of WO$_3$ films prepared by RF sputtering system were investigated in this paper. A removal rate of films increased, and the uniformity performance of surface decreased with the addition of an oxidizer to the tungsten slurry. Non-uniformity performance of surface was superior as its value was below 5 % when oxidizers of 5.0 vol% and 2.5 vol%, respectively, were added to the tungsten slurry. The optimized oxidizer concentration, reflected both the improved roughness values and hillock-free surface with the good uniformity performance, was 5.0 vol% as an atomic force microscopy(AFM) analysis of thin film topographies. Our CMP results will be a useful reference for advanced technology of thin films for gas sensor applications in the near future.

• Journal of Korean Vacuum Science & Technology
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• v.1 no.1
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• pp.24-29
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• 1997

Surface morphologies and fundamental characteristics of molybdenum nitride films deposited by reactive dc magnetron sputtering were studied for application to Cu diffusion barrier. A phase transformation from Mo to $\gamma$-Mo$_2$N phase at 0.5$N_2$ flow ratio.($N_2$/(Ar+$N_2$)) equal to and larger than 0.2, whereas a second phase transformation to $\gamma$-MoN phase at 0.5 N2 flow ratio, With the variation of the N2 ratio the surface morphologies of the films were generally smooth except the cases of 0.2 and 0.3$N_2$ gas rations, where build-up of film stresses occurred. $\gamma$-Mo$_2$N film was found to crystallize at the deposition temperature of 40$0^{\circ}C$. The surfaces of $\gamma$-Mo$_2$N films deposited up to 40$0^{\circ}C$ were smooth, but the film deposited at 50$0^{\circ}C$ had very rough surface morphology. It seems that this was due to the building-up of thermal stresses at the high deposition temperature, which might lead to hillock formation.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.336-343
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• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.

• YAKHAK HOEJI
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• v.55 no.2
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• pp.160-167
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• 2011

Cirsium japonicum var. ussuriense (CJ) is used as a folk medicine for diuretic, arthritis, dyspepsia, and bleeding in Korea. Until now, more than fifteen kinds of CJ were identified and among them, Cirsium japonicum var. nakaianum Nakai was selected as experimental material. Both that from The Medical Herb Garden of Seoul National University located at Gayang-dong, Koyang city and native that from a hillock near Dangjin, Chungnam were collected and analyzed to determine whether it is varied in efficacy on their habitats. Extracts and fractions of CJ had a strong effect of antibacterial activity on H. pylori and antioxidant effects. And the CJ from Garden and Dangjin were showed to be more efficient in acute gastritis through the HCl${\cdot}$ethanol-induced gastric lesion test and chronic gastritis through the indomethacin-induced gastric lesion test, respectively. This study proved that the effects of CJ are varied by their habitats. Also, these results suggest that the CJ has potentials for use as functional food and medicine.

• Journal of the Korea Institute of Military Science and Technology
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• v.17 no.1
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• pp.82-89
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• 2014

The damage in germanium (Ge) optical window irradiated by a near-infrared continuous wave (CW) laser was studied. Laser-induced heating and melting process were surveyed, and the specific laser power and the irradiance time to melt were estimated by numerical simulation. The experiments were also carried out to investigate the macro and micro structure change on Ge window. Results showed that the surface deformation was formed by melting and resolidification process, the damaged surface had a polycrystalline phase, and the transmittance as an optical performance factor in mid-infrared region was decreased. We confirmed that an abnormal polycrystalline phase and surface deformation effect such as hillock formation and roughness increase reduced the transmittance of Ge window and were the damage mechanism of CW laser induced damage on Ge window.