• 한국전자파학회논문지
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• 제29권4호
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• pp.285-289
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• 2018

본 논문에서는 지능적인 원거리 무선전력전송의 방식으로 시간 역전(time reversal) 기반 전파 집속 방법을 제시하였다. 시간 역전 기반의 무선전력전송은 복잡한 전파환경에서도 기기의 위치에 상관없이 전파를 선택적으로 집속하여 높은 peak 전력을 전달할 수 있다. 현실과 가까운 전파환경 시뮬레이션을 통하여 시간 역전 기반의 시 공간 전파 집속 현상을 검증하였고, 집속된 RF를 정류하여 전달된 DC 전압을 확인하였다. 또한 일반적인 협대역 신호(CW) 대비 시간 역전 신호의 peak 향상률과 정류 전력비를 확인한 결과, 최대 12 dB 향상된 peak 전력이 전송되었으며, 따라서 보다 높은 효율로 전력전송이 이루어짐을 확인하였다.

• 한국세라믹학회지
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• 제23권1호
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• pp.44-50
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• 1986

Si-ZnO n-n heterojunction diodes were prespared by r.f diode sputtering of the sintered ZnO target on n-type Si single crystal wafers and their structures and electrical properties were studied. The films were grown orientedly with the c-axis of crystallites perpendicular to the substrate surface at low r.f. powder and grown to polycrystalline films with random orientation at high r. f. powder. The crystallite size increased with the increasing substrate temperture The oriented texture films only were used to prepare the photovoltaic diodes and these didoes showed the photovoltaic effect veing positive of the ZnO side for the photons in the wavelength range of 380-1450nm. The sign reversal of phootovoltage which is the property os isotype heterojunction was not observed because of the degeneration of the ZnO films. The diode showed the forward rectification when it was biased with the ZnO side positive. The current-voltage characteristics exhibited the thermal-current type relationship J∝exp(qV/nkT) with n=1.23 at the low forward bias voltage and the tunnelling-current type relationship J∝exp($\alpha$V) where $\alpha$ was constant independent of temperature at the high forward bias voltage. The crystallite size of ZnO films were influenced largely on the photovoltaic properties of diodes ; The diodes with the films of the larger crystallites showed the poor photovoltaic properties. This reason may be cosidered that the ZnO films with the large crystallites could not grow to the electrically continuous films because the thickness of films was so thin in this experiment.

• 전력전자학회논문지
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• 제4권1호
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• pp.19-25
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• 1999

본 연구는 새로운 영전압, 영전류 스위칭 Forward 컨버터에 관한 것으로 종래의 하드 스위칭(Hard-Switching) Forward 컨버터에 있어서 Turn-off 및 Turn-off시 발생되는 스위칭 손실 및 출력 다이오드 역회복 특성에 따른 손실증가와 스위칭시 발생되는 기생진동을 Forward 컨버터에 있어서 1차측 주 스위칭소자 및 2차측 출력 정류다이오드와 병렬로 무손실 스너버를 적용함으로써 Forward 컨버터의 1차측 스위칭 소자의 Turn-off 및 Turn-on시 영전압, 영전류 스위칭을 이룰 수 있고, 출력 정류다이오드도 영전압, 영전류 스위칭 됨으로 다이오드의 역회복손실 및 기생 진동에 따른 EMI(Electro-Magnetic Interference)를 줄일 수 있는 무손실 스너버 적용 영전압, 영전류 스위칭 Forward 컨버터에 관한 것이다.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2003년도 학술대회논문집
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• pp.169-173
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• 2003

This paper analyzes the effects of various operating voltages on the electrical and light output characteristics of 20mW(5mm-Ф), 1W and 5W high-power RGB LEDs. Operating voltages of three types are compared on a simple LED circuit: DC, full-wave rectified DC. and square-wave DC. As a result, it is found that the 1W and 5W high-power LEDs should be provided with appropriate heat sinks that hold down the increase of junction temperature. As for the operating efficiency the case of full-wave rectification gives the highest value.

• 한국표면공학회지
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• 제28권3호
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• pp.182-191
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• 1995

A highly porous silicon layer was fabricated by anodizing single crystalline silicon in a dilute solution of hydrofluoric acid. The color of the porous silicon changed from red and blue to yellow gold during the anodizing process. The current-voltage (I-V) curve of the anodizing process showed a typical Schottky diode rectification form. The cell voltage decreased with the increase of HF concentration in the solution at high current range. However, the voltage was independent on HF concentration in the solution at low current range. The pore size was dependant on anodizing condition (HF concentration, current and anodizing time). The pore size and wall width of porous silicon layer were 4~6 and 1~3 nm, respectively. Surface of the porous silicon was covered with silicon compound ($SiH_x$etc.) according to IR spectrum analysis. The peak wavelength and width of photoluminescence (PL) spectrum of porous silicon were 650~850 nm (1.5~1.9 eV) and 250 nm, respectively. The photoluminescence intensity and peak wavelength, and porosity of porous silicon increased with increasing anodizing current and decreased with increasing HF concentration in the anodizing solution.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.108-113
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• 2021

In this paper, a totem pole PFC was structured in two methods with FET and diode for low-speed switch while GaN FET was used for high-speed switch. Internal power loss, power conversion efficiency and steady-state characteristics of the two methods were compared in the totem pole bridgeless PFC circuit which is widely applied in large-capacity and high-efficiency switching rectifier of 500W or more. In order to compare and confirm the steady-state characteristics under equal conditions, a 2kW class totem pole bridgeless PFC was constructed and the experimental results were analyzed. From the experimental results, it was confirmed that the low-speed switch operation has a large difference in efficiency due to the internal conduction loss of the low-speed switch at a low input voltage. Especially, input power factor and load characteristic showed no difference regardless of the low-speed switch operation.

• 전력전자학회논문지
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• 제19권5호
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• pp.440-449
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• 2014

This study proposes an LLC series resonant converter with a current doubler using a coupled inductor as a rectification circuit for the secondary side. The current doubler circuit is generally used for a high-voltage input and low-voltage output circuit to obtain high efficiency with small transformer turn ratio. However, an inductive circuit is not generally used in the secondary side of an LLC series resonant converter. If inductive components exist on the secondary side, the resonant characteristics are changed through the secondary inductive circuit. Mathematical analysis shows that the secondary-side current doubler with coupled inductor is not affected by the resonant characteristic of the primary LLC if leakage inductance occurs in the coupled inductor. Results of the analysis are proven by simulation; an experiment is also conducted for the proposed circuit.

• 전력전자학회논문지
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• 제14권3호
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• pp.235-242
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• 2009

본 논문에서는 새로운 비대칭 PWM 제어 방식의 양방향 하프브리지 컨버터를 제안한다. 제안한 컨버터는 구조가 간단하고 넓은 듀티 범위를 가지므로 연료전지와 같은 넓은 전압변동을 가지는 응용에 적합하다. 제안한 비대칭 PWM 방식은 기존의 위상각제어 방식에 비해 스위치 및 변압기의 동작전류를 큰 폭으로 낮추었고 ZVZCS와 동기 정류 방식을 적용하여 높은 효율과 전력밀도를 가질 수 있다. 기존 컨버터와의 비교 분석을 수행하였으며 실험을 통해 본 방식의 타당성을 검증하였다.

• 조명전기설비학회논문지
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• 제20권1호
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• pp.119-124
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• 2006

본 논문은 고주파 절연형 소프트 스위칭 PWM DC-DC 컨버터의 효율을 높일 수 있는 새로운 회로를 제안하였다. 제안한 DC-DC 컨버터는 고주파 변압기의 여자전류를 이용하지 않고 인덕턴스를 이용하였다. 그리고 고주파 절연 변압기 2차측에 동기 정류용 전력용 MOSFET에 새로운 기능을 부가한 온-오프 제어 방식을 이용하여 넓은 부하 범위에 걸쳐 안정된 영전압 스위칭(ZVS)동작을 실현하였다. 그 결과 제안한 DC-DC 컨버터의 실험 장치에 의해서 효율을 97[%]이상 달성하였다.

• Current Optics and Photonics
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• 제6권4호
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• pp.367-374
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• 2022

A photodetector based on a reduced graphene oxide (RGO)/n-Si heterojunction with high responsivity, detectivity and fast response speed is presented. Here, we put forward a simple vacuum filtration method to prepare RGO film and transfer it onto an n-Si substrate to form an RGO/n-Si heterojunction. The experimental results show that the heterojunction has good rectification characteristics, and the response and recovery time are less than 0.31 s and 0.25 s, respectively. Under 470 nm light conditions at -2 V applied voltage, the responsivity and detectivity of the device are 65 mA/W and 4.02 × 10¹⁰ cmHz^1/2W^-1, respectively. The simple preparation process and good performance of the RGO/n-Si heterojunction make it a promising material for photoelectric detection, especially in the near-ultraviolet band.