• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.4
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• pp.285-289
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• 2018

In this paper, we demonstrate electromagnetic wave focusing and rectification based on time reversal as a smart method for far-field wireless power transfer. Time reversal in a complex propagation environment allows for transmission of high peak power pulses by focusing the electromagnetic waves selectively regardless of the receiver position. We demonstrate wave focusing and radio frequency (RF) to direct current (DC) rectification via numerical simulation of a complex propagation environment. The results reveal that time reversal can ensure peak power up to 12 dB greater compared to a narrowband continuous wave signal, thereby enhancing the rectified DC voltage with better efficiency.

• Journal of the Korean Ceramic Society
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• v.23 no.1
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• pp.44-50
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• 1986

Si-ZnO n-n heterojunction diodes were prespared by r.f diode sputtering of the sintered ZnO target on n-type Si single crystal wafers and their structures and electrical properties were studied. The films were grown orientedly with the c-axis of crystallites perpendicular to the substrate surface at low r.f. powder and grown to polycrystalline films with random orientation at high r. f. powder. The crystallite size increased with the increasing substrate temperture The oriented texture films only were used to prepare the photovoltaic diodes and these didoes showed the photovoltaic effect veing positive of the ZnO side for the photons in the wavelength range of 380-1450nm. The sign reversal of phootovoltage which is the property os isotype heterojunction was not observed because of the degeneration of the ZnO films. The diode showed the forward rectification when it was biased with the ZnO side positive. The current-voltage characteristics exhibited the thermal-current type relationship J∝exp(qV/nkT) with n=1.23 at the low forward bias voltage and the tunnelling-current type relationship J∝exp($\alpha$V) where $\alpha$ was constant independent of temperature at the high forward bias voltage. The crystallite size of ZnO films were influenced largely on the photovoltaic properties of diodes ; The diodes with the films of the larger crystallites showed the poor photovoltaic properties. This reason may be cosidered that the ZnO films with the large crystallites could not grow to the electrically continuous films because the thickness of films was so thin in this experiment.

• The Transactions of the Korean Institute of Power Electronics
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• v.4 no.1
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• pp.19-25
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• 1999

To achieve high efficiency in high power and high frequency applications, reduction of switching losses and noise is very important. In this paper, an improved zero voltage switching forward dc/dc converter is proposed. The proposed converter is constructed by using energy recovery snubbers in parallel with the main switches and output diodes of the conventional forward dc/dc converter. Due to the use of the energy recovery snubbers in the primary and secondary side, the proposed converter achieves zero-voltage-switching turn-off without switching losses for switching devices and output rectification diodes. The complete operating principles and experimental results will be presented.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2003.11a
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• pp.169-173
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• 2003

This paper analyzes the effects of various operating voltages on the electrical and light output characteristics of 20mW(5mm-Ф), 1W and 5W high-power RGB LEDs. Operating voltages of three types are compared on a simple LED circuit: DC, full-wave rectified DC. and square-wave DC. As a result, it is found that the 1W and 5W high-power LEDs should be provided with appropriate heat sinks that hold down the increase of junction temperature. As for the operating efficiency the case of full-wave rectification gives the highest value.

• Journal of the Korean institute of surface engineering
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• v.28 no.3
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• pp.182-191
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• 1995

A highly porous silicon layer was fabricated by anodizing single crystalline silicon in a dilute solution of hydrofluoric acid. The color of the porous silicon changed from red and blue to yellow gold during the anodizing process. The current-voltage (I-V) curve of the anodizing process showed a typical Schottky diode rectification form. The cell voltage decreased with the increase of HF concentration in the solution at high current range. However, the voltage was independent on HF concentration in the solution at low current range. The pore size was dependant on anodizing condition (HF concentration, current and anodizing time). The pore size and wall width of porous silicon layer were 4~6 and 1~3 nm, respectively. Surface of the porous silicon was covered with silicon compound ($SiH_x$etc.) according to IR spectrum analysis. The peak wavelength and width of photoluminescence (PL) spectrum of porous silicon were 650~850 nm (1.5~1.9 eV) and 250 nm, respectively. The photoluminescence intensity and peak wavelength, and porosity of porous silicon increased with increasing anodizing current and decreased with increasing HF concentration in the anodizing solution.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.108-113
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• 2021

In this paper, a totem pole PFC was structured in two methods with FET and diode for low-speed switch while GaN FET was used for high-speed switch. Internal power loss, power conversion efficiency and steady-state characteristics of the two methods were compared in the totem pole bridgeless PFC circuit which is widely applied in large-capacity and high-efficiency switching rectifier of 500W or more. In order to compare and confirm the steady-state characteristics under equal conditions, a 2kW class totem pole bridgeless PFC was constructed and the experimental results were analyzed. From the experimental results, it was confirmed that the low-speed switch operation has a large difference in efficiency due to the internal conduction loss of the low-speed switch at a low input voltage. Especially, input power factor and load characteristic showed no difference regardless of the low-speed switch operation.

• The Transactions of the Korean Institute of Power Electronics
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• v.19 no.5
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• pp.440-449
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• 2014

This study proposes an LLC series resonant converter with a current doubler using a coupled inductor as a rectification circuit for the secondary side. The current doubler circuit is generally used for a high-voltage input and low-voltage output circuit to obtain high efficiency with small transformer turn ratio. However, an inductive circuit is not generally used in the secondary side of an LLC series resonant converter. If inductive components exist on the secondary side, the resonant characteristics are changed through the secondary inductive circuit. Mathematical analysis shows that the secondary-side current doubler with coupled inductor is not affected by the resonant characteristic of the primary LLC if leakage inductance occurs in the coupled inductor. Results of the analysis are proven by simulation; an experiment is also conducted for the proposed circuit.

• The Transactions of the Korean Institute of Power Electronics
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• v.14 no.3
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• pp.235-242
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• 2009

In this paper a new asymmetrical PWM bidirectional half bridge converter is proposed. The proposed converter has simple structure and wide duty cycle range, and therefore is suitable for applications such as fuel cells which have wide voltage variation. With the proposed asymmetrical PWM method the current rating of switch and transformer is significantly reduced compared to the conventional phase angle control method, and ZVZCS and synchronous rectification can also be achieved. This could result in high efficiency and high power density. The proposed converter is analytically compared to the conventional converter, and the proposed method was validated through the experiment.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.1
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• pp.119-124
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• 2006

A novel high frequency insulated soft switching PWM DC-DC converter circuit is proposed and then it is achieved the high-efficiency. This converter does not use the o(citing current of a high frequency transformer but use inductance. Then it realizes a widely stable zero voltage switching operation with the use of a novel ON-OFF control method at synchronized rectification power MOSEFETs of the high frequency insulated transformer secondary. Therefore, it is brought over 97[%] measurement efficiency by proposed DC-DC converter.

• Current Optics and Photonics
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• v.6 no.4
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• pp.367-374
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• 2022

A photodetector based on a reduced graphene oxide (RGO)/n-Si heterojunction with high responsivity, detectivity and fast response speed is presented. Here, we put forward a simple vacuum filtration method to prepare RGO film and transfer it onto an n-Si substrate to form an RGO/n-Si heterojunction. The experimental results show that the heterojunction has good rectification characteristics, and the response and recovery time are less than 0.31 s and 0.25 s, respectively. Under 470 nm light conditions at -2 V applied voltage, the responsivity and detectivity of the device are 65 mA/W and 4.02 × 10¹⁰ cmHz^1/2W^-1, respectively. The simple preparation process and good performance of the RGO/n-Si heterojunction make it a promising material for photoelectric detection, especially in the near-ultraviolet band.