• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1859-1861
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• 2005

The ZnO:Al thin films were prepared on glass by Facing Target Sputtering (FTS) system. We investigated electrical, optical, and structural properties of AZO thin film with sputtering current $0.1[A]{\sim}0.6[A]$. We obtained the lowest resistivity $2.3{\times}10^{-4}[{\Omega}-cm]$ at sputtering current 0.6[A] from the 4-point probe and the strong (002) peak at sputtering current 0.3[A] from the X-ray Diffractometer (XRD ). The optical transmittance of AZO thin films show a very high transmittance of $80{\sim}95%$ in the visible range and exhibit the absorption edge of about 350nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.218.2-218.2
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• 2013

In this study, CdS thin films were deposited onto glass substrates by radio frequency magnetron sputtering. The films were grown at various substrate temperatures in the range of 100 to $250^{\circ}C$. The effects of substrate temperatures on the structural and optical properties were examined. The XRD analysis revealed that CdS films were polycrystalline and retained the mixed structure of hexagonal wurtzite and cubic phase. The percentages of hexagonal structured crystallites in the films were seen to be increased by increasing substrate temperatures. The film grown at $250^{\circ}C$ showed a relatively high transmittance of 80% in the visible region, with an energy band gap of 2.45 eV. The transmittance date analysis indicated that the optical band gap was closely related to the substrate temperatures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.547-550
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• 2004

Indium tin oxide(ITO) films were prepared as a function of varying the proportion of oxygen$[0{\sim}1.0sccm]$ at fixed he gas[20sccm] by facing targets sputtering(FTS) system. Then electrical and optical properties of ITO thin films were estimated by Hall effect measurement system and UV/VIS-spectrometer. In the result, at very little oxygen rate, we can prepare a low resistivity ITO thin film of $3.40{\times}10^{-4}[\Omega{\cdot}cm]$ and transmittance of over 80%. So we noticed that the ITO thin film with low resistivity and high transmittance was prepared by FTS at room temperature.

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.2
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• pp.57-63
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• 1999

The optical absorption and transmittance of cow' crystalline were measured by spectrophotometer in the 200~800nm wavelength regions. The optical absorptions of crystalline composed of a high absorption band in the UV-A, UV-B, and appeared the light transmittance edge in the 400nm wavelength region, and completely transmitted without the absorption in the high wavelength regions than 400nm. Also, the optical absorption and transmittance had no temperature dependence. The optical transmittance spectrum of crystalline concord with the thin film structure of $n_0/(0.5H)L(LH)^6(0.5H)/n_s$ and $n_0{\mid}(0.5LH0.5L)^kL/1.25{\mid}4.0$ of long-pass edge filter form. In the artificial crystalline and inter lens layout, long-pass edge filter layout can UV cut off.

• Journal of the Semiconductor & Display Technology
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• v.17 no.3
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• pp.27-30
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• 2018

In this study, ZnO film was deposited on polycarbonate substrate by spin-spray method at low substrate temperature of $85^{\circ}C$. Surface morphology of ZnO films was changed by adding citrate from rod to dense structure. As-deposited ZnO film indicated high transmittance above 80%. In case of the resistivity, as-deposited ZnO film had high resistivity due to the existence of organic substance in the film. However, organic substance was removed and resistivity was decreased to $3.9{\times}10^{-2}{\Omega}{\cdot}cm$, after UV irradiation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.253-260
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• 2024

In this study, ITO thin films were fabricated on a glass substrate at different thicknesses without introducing oxygen using RF sputtering system. The structural, electrical, and optical properties were evaluated at various thicknesses ranging from 50 to 300 mm. As the thickness of deposited ITO thin film become thicker from 50 to 100 mm, carrier concentration, mobility, and band gap energy also increased while the resistivity and transmittance decreased in the visible light region. When the film thickness increased from 100 to 300 mm, the carrier concentration, mobility, and band gap energy decreased while the resistivity and transmittance increased. The optimum electrical properties were obtained for the ITO film 100 nm. After optimizing the thickness, the ITO thin films were post-annealed at different temperatures ranging from 100 to 300℃. As the annealing temperature increased, the ITO crystal phase became clearer and the grain size also increased. In particular, the ITO thin film annealed at 300℃ indicated high carrier concentration (4.32 × 10²¹ cm^-3), mobility (9.01 cm²/V·s) and low resistivity (6.22 × 10^-4 Ω·cm). This means that the optimal post-annealing temperature is 300℃ and this ITO thin film is suitable for use in solar cells and display application.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.256-261
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• 2009

Hydrophilic and transparent $TiO_2$ thin film was fabricated by sol-gel method and the properties of contact angle, surface morphology, and transmittance were measured. In addition, surfactant Tween 80 was used for increasing the hydrophilic property of thin film. When the contents of Tween 80 in $TiO_2$ solution was 0, 10, 30, 50wt%, the contact angles of $TiO_2$ thin film were $41.4^{\circ}$, $18.2^{\circ}$, $16.0^{\circ}$, $13.2^{\circ}$, respectively. Fabricated $TiO_2$ thin film showed the photocatalytic property that decomposed methylene blue and decreased the absorbance of solution after UV irradiation. $TiO_2$ thin films fabricated with the solution of 30 wt% Tween 80 were deposited on glass (bare), antimony tin oxide (ATO), fluorine tin oxide (FTO), indium tin oxide (ITO) coated glass substrates, and the contact angle and transmittance of thin film was measured. The contact angles of thin films deposited on four substrates were $16.2\sim27.1^{\circ}$ and was decreased to the range of $13.2\sim17.6^{\circ}$ after UV irradiation, Especially, the thin films coated on ATO and FTO glass substrate showed high transmittance of 74.6% in visible range, respectively, and low transmittance of 54.2% and 40.4% in infrared range, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.187-187
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• 2015

The past thirty years have seen increasingly rapid advances in the field of Indium Tin Oxide (ITO) transparent thin film.[1] However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials.[2] So far, in order to overcome this disadvantage, we show a transparent ITO/Ag/i-ZnO multilayer thin film electrode can be the solution. In comparison with using amount of ITO as a transparent conducting material, intrinsic-Zinc-Oxide (i-ZnO) based on ITO/Ag/i-ZnO multilayer thin film showed cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report ITO/Ag/i-ZnO multilayer thin film properties by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\square}$ at same visible light transmittance.(minimal point $5.2{\Omega}/{\square}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.303-307
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• 2015

Multilayered films of ITO (In₂O₃:SnO₂ = 9:1)/SiO₂ were deposited on soda-lime glass by RF/DC magnetron sputtering at 500℃ to improve the energy conversion efficiency of dye-sensitized solar cells (DSSCs). The light absorption of the dye was improved by decrease in light reflectance from the surface of the DSSCs by using an ITO film. In order to estimate the optical characteristics and compare them with experimental results, a simulation program named EMP (essential macleod program) was used. EMP results revealed that the multilayered thin films showed high transmittance (approximate average transmittance of 79%) by adjusting the SiO₂ layer thickness. XRD results revealed that the ITO and TiO₂ films exhibited a crystalline phase with (400) and (101) preferred orientations at 2 θ = 26.24° and 35.18°, respectively. The photocurrent-voltage (I-V) characteristics of the DSSCs were measured under AM 1.5 and 100 mW/cm² (1 sun) by using a solar simulator. The DSSC fabricated on the ITO film with a 0.1-nm-thick SiO₂ film showed a Voc of 0.697 V, J_sc of 10.596 mA/cm² , FF of 66.423, and calculated power conversion efficiency (η_AM1.5) of 5.259%, which was the maximum value observed in this study.

• Food Engineering Progress
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• v.15 no.1
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• pp.70-74
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• 2011

The effects of high pressure homogenization (microfluidization) on physicochemical properties of normal maize and oxidized maize starch film were studied. The molecular dispersibility of amlyose and amylopectin and the disintegration of granular structure had a marked effect on the physicochemical properties of starch films. The high pressure homogenized starch films showed increased solubility and transmittance due to the absence of gelatinized starch granules. The tensile strength of starch film increased significantly with decreasing oxygen permeability after high pressure homogenization, indicating that starch molecules were more uniformly and fully dispersed during the film formation. As a result, a clear starch film with improved mechanical properties was obtained after high pressure homogenization due to the increased interactions between the uniformly dispersed starch molecules.