• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.10-14
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• 2008

We synthesized GaN nanowires with high quality using the vapor phase epitaxy technique. The GaN nanowires were obtained at a temperature of $950^{\circ}C$. The Ar and $NH_3$ flow rates were 1000 sccm and 50 sccm, respectively. The shape of the GaN nanowires was confirmed through FESEM analysis. We were able to conclude that the GaN nanowires synthesized via vapor-solid (VLS) mechanism when the source was closed to the substrate. On the other side, the VS mechanism changed to vapor-liquid-solid (VLS) as the source and the substrate became more distant. Therefore, we can suggest that the large amount of Ga source from initial growth interrupt the role of catalyst on the substrate.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.597-603
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• 2016

Tantalum carbide, which is one of the ultra-high temperature ceramics, was deposited on graphite by low pressure chemical vapor deposition from a $TaCl_5-C_3H_6-Ar-H_2$ mixture. To maintain a constant $TaCl_5/C_3H_6$ ratio during the deposition process, $TaCl_5$ powders were continuously fed into the sublimation chamber using a screw-driven feeder. Sublimation behavior of $TaCl_5$ powder was measured by thermogravimetric analysis. TaC coatings have various phases such as $Ta+{\alpha}-Ta_2C$, ${\alpha}-Ta_2C+TaC_{1-x}$, and $TaC_{1-x}$ depending on the powder feeding methods, the $C_3H_6/TaCl_5$ ratio, and the deposition temperatures. Near-stoichiometric TaC was obtained by optimizing the deposition parameters. Phase compositions were analyzed by XRD, XPS, and Raman analysis.

• Transactions of the Korean hydrogen and new energy society
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• v.27 no.6
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• pp.693-701
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• 2016

Steam gasification of low rank coals is possible at relatively low temperature and low pressure, and thus shows higher efficiency compared to high rank coals. In this study, the gasification reactivity of four different Indonesian low rank coals (Samhwa, Eco, Roto, Kideco-L) was evaluated in $T=700-800^{\circ}C$. The low rank coals containing $53.8{\pm}3.4$ wt% volatile matter in proximate analysis and $71.6{\pm}1.2$ wt% carbon in ultimate analysis showed comparable gasification reactivity. In addition, $K_2CO_3$ catalyst rapidly accelerated the reaction rate at $700^{\circ}C$, and all of the coals were converted over 90% within 1 hour. The XRD analysis showed no significant difference in carbonization between the coals, and the FT-IR spectrum showed similar functional groups except for differences due to moisture and minerals. TGA results in pyrolysis ($N_2$) and $CO_2$ gasification atmosphere showed very similar behavior up to $800^{\circ}C$ regardless of the coal species, which is consistent with the steam gasification results. This confirms that the indirect evaluation of the reactivity can be made by the above instrumental analyses.

• Elastomers and Composites
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• v.39 no.1
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• pp.36-41
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• 2004

Solid polymer electrolytes were prepared by UV irradiation of the blends consisting of poly(ethylene oxide)(PEO), epoxy diacrylate(EDA) and LiClO_4$. Conductivities of the electrolyte films were measured as a function or blend composition, salt concentration and temperature. The electrolyte having the composition of poly(ethylene oxide) (70% by weight)/epoxy diacrylate (30% by weight) with mole ratio of 10 of ethylene $oxide/Li^+$ exhibited a high ionic conductivity of $1.2{\times}10^{-5} S/cm$ at $25^{\circ}C$. This blend is transparent and shows elastomeric properties. Morphological studies by means of differential scanning calorimetry, X-ray diffraction and polarized optical microscopy indicated that the cured epoxy chains in the blends inhibit the crystallization of poly (ethylene oxide) and thereby induce the blend systems to be completely amorphous in certain compositions.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.39-43
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• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.622-628
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• 2013

Nanocrystalline spinel lithium manganese oxide ($LiMn_2O_4$) powders with narrow-size-distribution, pure-phase particles, and high crystallinity with an average crystallite size of about 70 nm were synthesized at $600^{\circ}C$ for 6 h in air by freeze drying method. Spinel $LiMn_2O_4$ is also prepared by sol-gel using citric acid as a chelating agent. The influence of different parameters such as pH conditions, solvent, molar ratio of citric acid to total metal ions, calcination temperature, starting material on the structure, morphology and purity of this oxide was investigated. The results of sol-gel method show that pure $LiMn_2O_4$ with average crystallite size of about 130 nm can be produced from nitrate salts as starting materials at $800^{\circ}C$ for 6 h in air. The optimum pH and molar ratio of chelating agent to total metal ions are $4{\leq}pH{\leq}6$ and 1.0, respectively. A possible mechanism on the formation of the nanocrystallines synthesized by sol-gel was also discussed. At the end a comparison of the differences between two methods was made on the basis of x-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and thermogravimetric analysis (TGA) tests.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2003.05a
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• pp.289-293
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• 2003

This study dealt with the characterization of $MoSi_2$ based composites containing three types of additive materials such as SiC, $NbSi_2\;and\;ZrO_2$ particles have been investigated, based on the detailed examination of their microstructures and fracture surfaces. The effects of reinforcing materials on the high temperature strength of $MoSi_2$ based composites have been also examined. $MoSi_2$ based composites were fabricated by the hot press process under the vacuum atmosphere. The volume fraction of reinforcing materials in the composite system was fixed as 20 %. The microstructures and the mechanical properties of $MoSi_2$ based composites were investigated by means of SEM, EDS, XRD and three point bending test.

• Journal of the Korean Ceramic Society
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• v.20 no.1
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• pp.37-42
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• 1983

An attempt was made to derive a possible synthetic mechanism of Fluoro-phlogopite (Mica, 4Mg.$Al_2O_3$.$6SiO_2$.$K_2O$.$2MgF_2$) The pevention of fluorine vaporization turned out to be the key in the synthesis of Mica in question.l Consequently the quinary system of Mica was seperately synthesized ; frist 4MgO.$Al_2O_3-6SiO_2$(ternary system) was sintered at 135$0^{\circ}C$ and $K_2O$ and $MgF_2$ were added and second 4MgO.$Al_2O_3-6SiO_2$.$K_2O$ (quarternary system) was heat-treated at 135$0^{\circ}C$ and $MgF_2$ was added. The ternary system resulted in Proto-enstatite Cordierite and Spinel phases while Forsterite and Leucite were shown in the quarternay system . In both methods Fluoro-phlogopite was systhesized but the solid state reactions to form Mica from the ternary system and the quarternary system were different. High temperature reactions in the formation of Mica were investigated employing XRD, DTA and SEM The study of the synthesis of Mica indirectly suggested a method of phase analysis of quinary system(MgO-$Al_2O_3-SiO_2-K_2O-MgF_2$) and quarternary system(MgO-$Al_2O_3-SiO_2-K_2O-MgF_2$) at various temperatures.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1523-1525
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• 2003

Due to the rapid development of wireless networking system, researches on the communication devices are mainly focus on microwave frequency devices such as filters, resonators, and phase shifters. Among them, Film bulk acoustic resonator (FBAR) has been paid extensive attentions for their high performance. In this research, ZnO thin films were deposited by RF-magnetron sputtering on Al/$SiO_2$/Si wafer and then crystalline properties and surface morphology were examined. To measure crystalline structure and surface morphology X-ray diffraction (XRD) and Scanning Electron Microscope (SEM) were employed. It was showed that crystalline properties of ZnO thin films were strongly dependant on the deposition conditions. As increasing the deposition temperature and the deposition pressures, the peak intensities of ZnO(002) plane were increased until $300^{\circ}C$, then decreased rapidly. At the sputtering conditions of RF power of 213 W and working pressure of 15 m Torr, ZnO film had excellent c-axis orientation, surface morphology, and adhesion to the substrate. In conclusion we optimized smooth surface with very small grains as well as highly c-axis oriented ZnO film for FBAR applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.167-171
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• 2003

We report the material and electrical properties of $CoSi_2$ and $NiSi_2$contacts to n-type 4H-SiC depending on the post-annealing and the metal covering conditions. The Ni and Co silicides are deposited by RF sputtering with Ni/Si/Ni and Co/Si/Co films separately deposited on 4H-SiC substrates. The deposited films are annealed at $800\;^{\circ}C$ in $Ar:H_2$ (9:1) gas ambient. Results of the specific surface resistivity measurements show that the resistivity of the Co-based metal contact was the one order lower than that of the Ni-based contact. The specific contact resistance was measured by a transmission line technique, and the specific contact resistivity of $1.5{\times}10^{-6}\;{\Omega}\;cm^2$ is obtained for Co/Si/Co metal structures after a two-step annealing; at $550\;^{\circ}C$ for 10 min and $800\;^{\circ}C$ for 3min. The physical properties of the contacts were examined by using XRD and AES, and the results indicate that the Co-based metal contacts have better structural stability of silicide phases formed after the high temperature annealing.