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The New Finding on BOLD Response of Motor Acupoint KI6(照海) by fMRI (fMRI를 이용하여 수지굴신운동(手指屈伸運動)과 조해(照海)(KI6) 자침(刺鍼)에 의(依)한 대뇌운동피질(大腦運動皮質)의 활성변화(活性變化)에 관(關)한 비교(比較) 연구(硏究))

  • Kwon, Cheol-hyeon;Lee, Jun-beom;Hwang, Min-seob;Yoon, Jong-hwa
    • Journal of Acupuncture Research
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    • v.21 no.6
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    • pp.177-186
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    • 2004
  • Introduction : Recent studies Suggested that there is a strong correlation between acupuncture stimulation and its related cortical activation. Anther study showed that either positive or negative BOLD effects could be observed depending on anatomical structure in acupuncture stimulation. In ttis study, we investigated a new acupoint $KI_6$ (照海), which was known as motor-related acupoint and obtained an evidence that the stimulation of $KI_6$ resulted in either negative or positive BOLD response to stimulation. Methods & Results : 1. Subjects and paradigms : Two separate stimulation paradigms were performed on five healthy (aged 22-23 yrs) in this study. First, the paradigm of acupuncture stimulation was that the acupuncture needle was inserted in acupoints $KI_6$, which is located in lateral side of the foot and then continuously twisted(補瀉를 除外한 捻轉法) for 70 seconds for 10 cycles of activation. During rest period (70 seconds), the needle was completed removed from acupoint. Total 60 cycles were performed and 10 images were obtained per cycle. Second, nonacupoint was randomly selected and the same paradigm was performed as acupoint stimulation. The stimulation protocol comprised 10 cycles of alternating. activation and rest (10 images per cycle). Total 60 cycles were performed and each cycle take about 1.5 sec for motor task. Subjects take an at least 15 minutes break before starting anther paradigm. 2. fMRI mapping : Multi-slice functional images were obtained on a 1.5T Magnetom Vision MRI scanner (Simens Medical, Erlangen, Germany) equipped with high performance whole-body gradients. The BOLD T2 * - weighted images were acquired with acho planar imaging sequence (TR = 1.2 sec, TE = 60 msec, and flip angle = $90_{\circ}$). The other sequence parameter are : FOV = 210 mm, matrix=$64{\times}128$ or $64{\times}64$, slice number=10 and slice thickness = 5 or 8 mm. the anatomic images were obtained with Spin-echo T1-weighted images. The resulting images were then anaiyzed with STIMULATE (CMRR, U. of Minnesota) to generate functional maps using a student T-test (p < 0.005) and cluster analysis. Both positive and negative response were evaluated. Conclusions : We have observed the activation of the motor cortex by stimulating motor-related acupoint ($KI_6$). Among five subjects, negative BOLD response was shown in four and positive response in one. All subjects showed positive response to conventional finger flexion-extension task. To understand the detailed mechanisms of correlation between acupuncture stimulation and BOLD fMRI changes and two typs of response, further study strongly required.

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Effects of Curing Temperature on the Optical and Charge Trap Properties of InP Quantum Dot Thin Films

  • Mohapatra, Priyaranjan;Dung, Mai Xuan;Choi, Jin-Kyu;Jeong, So-Hee;Jeong, Hyun-Dam
    • Bulletin of the Korean Chemical Society
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    • v.32 no.1
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    • pp.263-272
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    • 2011
  • Highly luminescent and monodisperse InP quantum dots (QDs) were prepared by a non-organometallic approach in a non-coordinating solvent. Fatty acids with well-defined chain lengths as the ligand, a non coordinating solvent, and a thorough degassing process are all important factors for the formation of high quality InP QDs. By varying the molar concentration of indium to ligand, QDs of different size were prepared and their absorption and emission behaviors studied. By spin-coating a colloidal solution of InP QD onto a silicon wafer, InP QD thin films were obtained. The thickness of the thin films cured at 60 and $200^{\circ}C$ were nearly identical (approximately 860 nm), whereas at $300^{\circ}C$, the thickness of the thin film was found to be 760 nm. Different contrast regions (A, B, C) were observed in the TEM images, which were found to be unreacted precursors, InP QDs, and indium-rich phases, respectively, through EDX analysis. The optical properties of the thin films were measured at three different curing temperatures (60, 200, $300^{\circ}C$), which showed a blue shift with an increase in temperature. It was proposed that this blue shift may be due to a decrease in the core diameter of the InP QD by oxidation, as confirmed by the XPS studies. Oxidation also passivates the QD surface by reducing the amount of P dangling bonds, thereby increasing luminescence intensity. The dielectric properties of the thin films were also investigated by capacitance-voltage (C-V) measurements in a metal-insulator-semiconductor (MIS) device. At 60 and $300^{\circ}C$, negative flat band shifts (${\Delta}V_{fb}$) were observed, which were explained by the presence of P dangling bonds on the InP QD surface. At $300^{\circ}C$, clockwise hysteresis was observed due to trapping and detrapping of positive charges on the thin film, which was explained by proposing the existence of deep energy levels due to the indium-rich phases.

High resolution flexible e-paper driven by printed OTFT

  • Hu, Tarng-Shiang;Wang, Yi-Kai;Peng, Yu-Rung;Yang, Tsung-Hua;Chiang, Ko-Yu;Lo, Po-Yuan;Chang, Chih-Hao;Hsu, Hsin-Yun;Chou, Chun-Cheng;Hsieh, Yen-Min;Liu, Chueh-Wen;Hu, Jupiter
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.421-427
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    • 2009
  • We successfully fabricated 4.7-inch organic thin film transistors array with $640{\times}480$ pixels on flexible substrate. All the processes were done by photolithography, spin coating and ink-jet printing. The OTFT-Electrophoretic (EP) pixel structure, based on a top gate OTFT, was fabricated. The mobility, ON/OFF ratio, subthreshold swing and threshold voltage of OTFT on flexible substrate are: 0.01 ^2/V-s, 1.3 V/dec, 10E5 and -3.5 V. After laminated the EP media on OTFT array, a panel of 4.7-inch $640{\times}480$ OTFT-EPD was fabricated. All of process temperature in OTFT-EPD is lower than $150^{\circ}C$. The pixel size in our panel is $150{\mu}m{\times}150{\mu}m$, and the aperture ratio is 50 %. The OTFT channel length and width is 20 um and 200um, respectively. We also used OTFT to drive EP media successfully. The operation voltages that are used on the gate bias are -30 V during the row data selection and the gate bias are 0 V during the row data hold time. The data voltages that are used on the source bias are -20 V, 0 V, and 20 V during display media operation.

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Synthesis, Antibacterial and Antifungal Activities of Some Cobalt(II) and Nickel(II) Complexes of Thiosemicarbazones (Thiosemicarbazones의 몇 가지 코팔트(II) 및 니켈(II) 착물에 대한 합성, 항박테리아 및 항균 활성)

  • Prasad, Surendra;Agarwal, Ram K.
    • Journal of the Korean Chemical Society
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    • v.55 no.2
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    • pp.189-198
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    • 2011
  • In the present paper two new thiosemicarbazones i.e., 4[N-(4'-ethylbenzalidene)amino]antipyrine thiosemicarbazone (EBAAPTS) and 4[N-(2',4'-dimethylbenzalidene)amino]antipyrine thiosemicarbazone (DMBAAPTS) have been synthesized and characterized. The complexing abilities of these thiosemicarbazones i.e. EBAAPTS and DMBAAPTS towards cobalt(II) and nickel(II) salts have been explored. The reactions of the hot ethanolic solutions of cobalt(II) and nickel(II) salts with EBAAPTS and DMBAAPTS led to the formation of the novel complexes of general composition [$MX_2(L)H_2O$] (M=$Co^{2+}$ or $Ni^{2+}$; X=$Cl^-$, $Br^-$, $NO_3^-$, $NCS^-$ or $CH_3COO^-$; L=EBAAPTS or DMBAAPTS). The newly synthesized complexes have been characterized by elemental analyses, molar mass, molar conductance, magnetic susceptibility, infrared and electronic spectral studies. The molar conductance measurements of the complexes in nitrobenzene correspond to their non-electrolytic nature. All the complexes are of high-spin type. On the basis of spectral studies an octahedral geometry has been assigned for Co(II) and Ni(II) complexes of the type [$MX_2(L)H_2O$]. These complexes were screened for their antibacterial and antifungal activities on different species of pathogens, fungi and bacteria and their biopotency has been discussed.

Study of Apparent Diffusion Coefficient Changes According to Spinal Disease in MR Diffusion-weighted Image

  • Heo, Yeong-Cheol;Cho, Jae-Hwan
    • Journal of Magnetics
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    • v.22 no.1
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    • pp.146-149
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    • 2017
  • In this study, we compared the standardized value of each signal intensity, the apparent diffusion coefficient (ADC) that digitizes the diffusion of water molecules, and the signal to noise ratio (SNR) using b value 0 400, 1400 ($s/mm^2$). From March 2013 to December 2013, patients with suspicion of simple compound fracture and metastatic spine cancer were included in the MR readout. We used a 1.5 Tesla Achieva MRI system and a Syn-Spine Coil. Sequence is a DWI SE-EPI sagittal (diffusion weighted imaging spin echo-echo planar imaging sagittal) image with b-factor ($s/mm^2$) 0, 400, 1400 were used. Data analysis showed ROI (Region of Interest) in diseased area with high SI (signal intensity) in diffusion-weighted image b value 0 ($s/mm^2$) Using the MRIcro program, each SI was calculated with images of b-value 0, 400, and 1400 ($s/mm^2$), ADC map was obtained using Metlab Software with each image of b-value, The ADC is obtained by applying the ROI to the same position. The standardized values ($SI_{400}/SI_0$, $SI_{400}/SI_0$) of simple compression fractures were $0.47{\pm}0.04$ and $0.23{\pm}0.03$ and the standardized values ($SI_{400}/SI_0$, $SI_{400}/SI_0$) of the metastatic spine were $0.57{\pm}0.07$ and $0.32{\pm}0.08$ And the standardized values of the two diseases were statistically significant (p < 0.05). The ADC ($mm^2/s$) for b value 400 ($s/mm^2$) and 1400 ($s/mm^2$) of the simple compression fracture disease site were $1.70{\pm}0.16$ and $0.93{\pm}0.28$ and $1.24{\pm}0.21$ and $0.80{\pm}0.15$ for the metastatic spine. The ADC ($mm^2/s$) for b value 400($s/mm^2$) was statistically significant (p < 0.05) but the ADC ($mm^2/s$) for b value 1400 (p > 0.05). In conclusion, multi - b value recognition of signal changes in diffusion - weighted imaging is very important for the diagnosis of various spinal diseases.

Fabrication and Characterization of UV-curable Conductive Transparent Film with Polyaniline Nanofibers (폴리아닐린 나노섬유를 이용한 광경화형 전도성 투명필름의 제조 및 특성)

  • Kim, Sung-Hyun;Song, Ki-Gook
    • Polymer(Korea)
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    • v.36 no.4
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    • pp.531-535
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    • 2012
  • Conductive polyaniline (PANI) nanofibers in UV-curable resin were used for a transparent conductive film. The emeraldine-salt PANI (ES-PANI) nanofibers were prepared by chemical oxidation polymerization of aniline, which could be changed into emeraldine-base PANI by dedoping. EB-PANI nanofibers as a precursor for conductive fillers were thereby transformed into re-dpoed PANI (rES-PANI) by dodecylbenzenesulfonic acid in the UV-curable resin solution. rES-PANI nanofibers have high conductivity and long-term stability in the solution without a defect of nanostructure. The resulting conductive resin solution was proved to be highly stable where no precipitation of rES-PANI fillers was observed over a period of 3 months. The transparent film was spin-casted on a poly(methyl methacrylate) sheet of thickness ca. $5{\mu}m$. A surface resistance of $6.5{\times}10^8{\Omega}/sq$ and transmittance at 550 nm of 91.1% were obtained for the film prepared with a concentration of 1.4 wt% rES-PANI nanofibers in the solution. This transformation process of rES-PANI from ES-PANI by dedoping-redoping can be an alternative method for the preparation of an antistatic protection film with controllable surface resistance and optical transparencies with the PANI concentration in UV-curable solution.

MR Characteristics of CoO based Magnetic tunnel Junction (CoO를 절연층으로 이용한 스핀 의존성 터널링 접합에서의 자기저항 특성)

  • 정창욱;조용진;안동환;정원철;조권구;주승기
    • Journal of the Korean Magnetics Society
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    • v.10 no.4
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    • pp.159-163
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    • 2000
  • MR characteristics in magnetic tunnel junction using CoO as the oxide barrier were investigated. Spin-dependent tunnel junctions were fabricated on 4$\^$o/ tilt-cut (111)Si substrates in 3-gun magnetron sputtering system. The top and bottom ferromagnetic electrodes were Ni$\_$80/Fe$\_$20/(300 $\AA$) and Co(300 $\AA$), respectively. The oxide barriers (CoO) were formed by the thermal oxidation at room temperature in an O$_2$ atmosphere and the plasma oxidation. The increase of coercive field due to antiferromagnetic-ferromagnetic coupling has been observed in O$_2$plasma-oxidized CoO based junctions at room temperature. At a sensing current of 1 mA, MR ratios of O$_2$plasma-oxidized CoO based junction and thermal-oxidized CoO based junction at room temperature were 1% and 5%, respectively. Larger MR ratios are observed in magnetic tunnel juctions with thermal oxidized CoO when sensing current more than applied 1.5 mA. At a sensing current of 1.5 mA, we have observed MR value of 28 % and specific resistance (RA=R$\times$A) value of 10.9 ㏀$\times$$^2$. When specific resistance values reached 2.28 ㏀$\times$$^2$, we have observed that MR ratios become as high as 120%.

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Ferromagnetism and Anomalous Hall Effect of $TiO_2$-based superlattice films for Dilute Magnetic Semiconductor Applications

  • Jiang, Juan;Seong, Nak-Jin;Jo, Young-Hun;Jung, Myung-Hwa;Yang, Jun-Mo;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.41-41
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    • 2007
  • For use in spintronic materials, dilute magnetic semiconductors (DMS) are under consideration as spin injectors for spintronic devices[l]. $TiO_2$-based DMS doped by a cobalt, iron, and manganese et al. was recently reported to show ferromagnetic properties, even at temperatures above 300K and the magnetic ordering was explained in terms of carrier-induced ferromagnetism, as observed for a III-V based DMS. An anomalous Hall effect (AHE) and co-occurance of superparamagnetism in reduced Co-doped rutile $TiO_{2-\delta}$ films have also been reported[2]. Metal segregation in the reduced metal-doped rutile $TiO_2-\delta$ films still remains as problems to solve the intrinsic DMS properties. Superlattice films have been proposed to get dilute magnetic semiconductor (DMS) with intrinsicroom-temperature ferromagnetism. For a $TiO_2$-based DMS superlattice structure, each layer was alternately doped by two different transition metals (Fe and Mn) and deposited to a thickness of approximately $2.7\;{\AA}$ on r-$Al_2O_3$(1102) substrates by pulsed laser deposition. The r-$Al_2O_3$(1102) substrates with atomic steps and terrace surface were obtained by thermal annealing. Samples of $Ti_{0.94}Fe_{0.06}O_2$(TiFeO), $Ti_{0.94}Mn_{0.06}O_2$(TiMnO), and $Ti_{0.94}(Fe_{0.03}Mn_{0.03})O_2$ show a low remanent magnetization and coercive field, as well as superparamagnetic features at room temperature. On the other hand, superlattice films (TiFeO/TiMnO) show a high remanent magnetization and coercive field. An anomalous Hall effect in superlattice films exhibits hysisteresis loops with coercivities corresponding to those in the ferromagnetic Hysteresis loops. The superlattice films composed of alternating layers of $Ti_{0.94}Fe_{0.06}O_2$ and $Ti_{0.94}Mn_{0.06}O_2$ exhibit intrinsic ferromagnetic properties for dilute magnetic semiconductor applications.

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Properties of liquid crystal alignment layers exposued to ion-beam irradiation enemies (이온빔 에너지에 따른 액정배향막의 전기광학적 특성연구)

  • Oh, Byeong-Yun;Lee, Kang-Min;Park, Hong-Gyu;Kim, Byoung-Yong;Kang, Dong-Hun;Han, Jin-Woo;Kim, Young-Hwan;Han, Jeong-Min;Lee, Sang-Keuk;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.430-430
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    • 2007
  • In general, polyimides (PIs) are used in liquid crystal displays (LCDs) as alignment layer of liquid crystals (LCs). Up to date, the rubbing alignment technique has been widely used to align liquid crystals on the PI surface, which is suitable for mass-production of LCDs because of its simple process and high productivity. However, this method has some disadvantages. Rubbed PI surfaces include the debris left by the cloth and the generation of electrostatic charges during rubbing process. Therefore, rubbing-free techniques for LC alignment are strongly required in LCD technology. In this experiment, PI was uniformly coated on indium-tin-oxide electrode substrates to form LC alignment layers using a spin-coating method and the PI layers were subsequently imidized at 433 K for 1 h. The thickness of the PI layer was set at 50 nm. The LC alignment layer surfaces were exposed to an $Ar^+$ ion-beam under various ion-beam energies. The antiparallel cells and twisted-nematic (TN) cells for the measurement of pretile angle and electro-optical characteristics were fabricated with the cell gap of 60 and $5\;{\mu}m$, respectively. The LC cells were filled with nematic LC (NLC, MJ001929, Merck) and were assembled. The NLC alignment capability on ion-beam-treated PI was observed using photomicroscope and the pretilt angle of the NLC was measured by the crystal-rotation method at room temperature. Voltage-transmittance (V-T) and response time characteristics of the ion-beam irradiated TN cell were measured by a LCD evaluation system.

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Stability Enhancement of IZOthin Film Transistor Using SU-8 Passivation Layer (SU-8 패시베이션을 이용한 솔루션 IZO-TFT의안정성 향상에 대한 연구)

  • Kim, Sang-Jo;Yi, Moonsuk
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.7
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    • pp.33-39
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    • 2015
  • In this work, SU-8 passivated IZO thin-film transistors(TFTs) made by solution-processes was investigated for enhancing stability of indium zinc oxide(IZO) TFT. A very viscous negative photoresist SU-8, which has high mechanical and chemical stability, was deposited by spin coating and patterned on top of TFT by photo lithography. To investigate the enhanced electrical performances by using SU-8 passivation layer, the TFT devices were analyzed by X-ray phtoelectron spectroscopy(XPS) and Fourier transform infrared spectroscopy(FTIR). The TFTs with SU-8 passivation layer show good electrical characterestics, such as ${\mu}_{FE}=6.43cm^2/V{\cdot}s$, $V_{th}=7.1V$, $I_{on/off}=10^6$, SS=0.88V/dec, and especially 3.6V of ${\Delta}V_{th}$ under positive bias stress (PBS) for 3600s. On the other hand, without SU-8 passivation, ${\Delta}V_{th}$ was 7.7V. XPS and FTIR analyses results showed that SU-8 passivation layer prevents the oxygen desorption/adsorption processes significantly, and this feature makes the effectiveness of SU-8 passivation layer for PBS.