• 제목/요약/키워드: High-spin

검색결과 750건 처리시간 0.038초

회전발사체 롤댐핑 특성에 관한 고속 유동장 실험연구 (An Experimental Study on Roll-Damping Characteristics of a Spinning Projectile at High Speed Region)

  • 오세윤;이도관;김성철;김상호;안승기
    • 한국항공우주학회지
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    • 제39권10호
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    • pp.912-918
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    • 2011
  • 본 연구의 목적은 풍동실험을 통해 회전발사체에서 발생하는 동적 롤댐핑 특성을 실험적으로 측정하는데 있었으며, 이를 위해 약 12,000 rpm으로 회전하는 회전발사체 실험모형에 작용하는 롤댐핑 특성의 측정을 위한 고속풍동실험을 국방과학연구소 삼중음속풍동에서 수행하였다. 실험시의 마하수는 0.7~1.05까지의 천음속 영역이었으며 이때의 받음각 구간은 -4~+10 deg이었다. 풍동실험 측정기법의 유효성 평가를 위해 동일형상 모형에 대해 기 수행하였던 롤댐핑 측정결과와의 비교검토를 수행하였다.

터보프롭 항공기의 스핀/실속 회복장치 설계 (Design for Spin/Stall Recovery Parachute System of Turbo-prop Airplane)

  • 이동훈;노병찬;강명각;강경우;이주하
    • 한국항공우주학회지
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    • 제40권8호
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    • pp.726-736
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    • 2012
  • 본 논문은 KC-100 소형민항기의 스핀시험을 위해 장착될 스핀회복장치의 설계 및 지상활주 전개 시험에 대해 기술하였다. 스핀회복장치에 대한 상세 설계 단계에서 공력, 구조, 안정성, 조종성 등에 대한 해석적 결과를 토대로 낙하산 단위면적당 라이저 길이, 낙하산 다공성, 낙하산 펼침 시간, 및 전개방법 등의 설계 변수를 결정했다. 본 시스템의 검증을 위해 항공기에 스핀회복장치를 장착한 상태에서 기능점검 후 KC-100 고속활주 중 스핀슈트 전개를 수행했다.

스핀코터를 이용한 박막의 기계적 안정성 평가 (Mechanical Stability Evaluation of Thin Film with Spin-coater)

  • 김지은;김정환;홍성철;조한구;안진호
    • 반도체디스플레이기술학회지
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    • 제15권1호
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    • pp.6-11
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    • 2016
  • For high volume manufacturing using extreme ultraviolet (EUV) lithography, mask protection from contamination during lithography process must be solved, and EUV pellicle is the strongest solution. Based on the technical requirements of EUV pellicle, EUV pellicle should have large membrane area ($110{\times}140mm^2$) with film transmittance over 90% and mechanical stability. Even though pellicle that satisfies size standard with high transmittance has been reported, its mechanical stability has not been confirmed, nor is there a standard to evaluate the mechanical stability. In this study, we suggest a rather simple method evaluating mechanical stability of pellicle membrane using spin-coater which can emulate the linear accelerated motion. The test conditions were designed by simulating the acceleration distribution inside pellicle membrane through correlating the linear acceleration and centripetal acceleration, which occurs during linear movement and rotation movement, respectively. By these simulation results, we confirmed the possibility of using spin-coater to evaluate the mechanical stability of EUV pellicle.

Ferromagnetic Semiconductors: Preparation and Properties

  • 조성래
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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    • pp.19-19
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    • 2003
  • The injection of spins into nonmagnetic semiconductors has recently attracted great interest due to the potential to create new classes of spin-dependent electronic devices. A recent strategy to achieve control over the spin degree of freedom is based on dilute ferromagnetic semiconductors. Ferromagnetism has been reported in various semiconductor groups including II-Ⅵ, III-V, IV and II-IV,-V$_2$, which will be reviewed. On the other hand, to date the low solubility of magnetic ions in non-magnetic semiconductor hosts and/or low Curie temperature have limited the opportunities. Therefore the search for other promising ferromagnetic semiconducting materials, with high magnetic moments and high Curie temperatures (Tc), is of the utmost importance. In this talk, we also introduce new pure ferromagnetic semiconductors, MnGeP$_2$ and MnGeAs$_2$, exhibiting ferromagnetism and a magnetic moment per Mn at 5K larger than 2.40 ${\mu}$B. The calculated electronic structures using the FLAPW method show an indirect energy gap of 0.24 and 0.06 eV, respectively. We have observed spin injection in MnGeP$_2$ and MnGeAs$_2$ magnetic tunnel junctions through semiconducting barriers.

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Tunneling Magnetoresistance: Physics and Applications for Magnetic Random Access Memory

  • Park, Stuart in;M. Samant;D. Monsma;L. Thomas;P. Rice;R. Scheuerlein;D. Abraham;S. Brown;J. Bucchigano
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
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    • pp.5-32
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    • 2000
  • MRAM, High performance MRAM using MTJS demostrated, fully integrated MTJ MRAM with CMOS circuits, write time ~2.3 nsec; read time ~3 nsec, Thermally stable up to ~350 C, Switching field distibution controlled by size & shape. Magnetic Tunnel Junction Properties, Magnetoresistance: ~50% at room temperature, enhanced by thermal treatment, Negative and Positive MR by interface modification, Spin Polarization: >55% at 0.25K, Insensitive ot FM composition, Resistance $\times$ Area product, ranging from ~20 to 10$^{9}$ $\Omega$(${\mu}{\textrm}{m}$)$^{2}$, Spin valve transistor, Tunnel injected spin polarization for "hot" electrons, Decrease of MTJMR at high bias originates from anode.

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Correlation between Structures and Magnetism in Iron: Ferromagnetism and Antiferromagnetism

  • Lee, Dong-Kook;Hong, Soon-Cheol
    • Journal of Magnetics
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    • 제12권2호
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    • pp.68-71
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    • 2007
  • Even a pure bulk Fe has a complicated magnetic phase and its magnetism is still needed to be clarified. In this study we investigated the magnetism of bcc and fcc bulk Fe with total energy calculations as functions of atomic volume. The full-potential linearized augmented plane wave method was adopted within a generalized gradient approximation. The ground state of bulk Fe is confirmed to be of ferromagnetic (FM) bcc. For fcc structured Fe an antiferromagnetic (AFM) state is more stable compared to FM states which exist as low spin and high spin states. The stable AFM states were found to accompany a tetragonal distortion, while the FM states remained in a cubic symmetry. At an expanded lattice constant a high spin FM state was calculated to be able to be stabilized with significant enhanced magnetic moment compared to the value of the ground state, bcc FM.

스핀 스프레이법으로 PC 기판에 제작한 산화아연 박막의 특성 (Property of Spin-sprayed ZnO Film on PC Substrate)

  • 홍정수;;;박용서;김경환
    • 반도체디스플레이기술학회지
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    • 제17권3호
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    • pp.27-30
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    • 2018
  • In this study, ZnO film was deposited on polycarbonate substrate by spin-spray method at low substrate temperature of $85^{\circ}C$. Surface morphology of ZnO films was changed by adding citrate from rod to dense structure. As-deposited ZnO film indicated high transmittance above 80%. In case of the resistivity, as-deposited ZnO film had high resistivity due to the existence of organic substance in the film. However, organic substance was removed and resistivity was decreased to $3.9{\times}10^{-2}{\Omega}{\cdot}cm$, after UV irradiation.

국소적 격자 삽입법을 이용한 반원주 내의 스핀업 유동 특성에 대한 연구 (Study on the Spin-up of Fluid in a Semi-Circular Container Using a Zonal-Embedded-Grid Method)

  • 서용권;여창호
    • 한국가시화정보학회지
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    • 제2권2호
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    • pp.32-37
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    • 2004
  • In this paper the numerical method with a zonal embedded grid system for an incompressible flow within a semi-circular container is presented. The algorithm is validated by its application to some typical flow models including the spin-up flow inside a semi-circular geometry. Flow visualization for the spin-up flows was used by PIV. The results show that at high Reynolds numbers the cyclonic cell at the left-hand side region moves along the circular wall and merges with the cell at the right-hand side region.

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