• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.253-269
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• 1999

The development of telecommunication and information technology requires to develop new piezoelectric materials with small size, low impedance, wide pass band width and high thermal stability of frequency. Langasite (La3Ga5SiO14) single crystal has been researched substitute of quartz and LiNbO3 for the applications of SAW filter, BAW filter and resonator. Its single crystal growth has been carried out by Czochralski Method. So, in order to get single crystal with higher quality, in this study, lnagasite (La3Ga5SiO14) single crystal was grown by using Floating Zone (FZ) method and characterized. For the growth of langasite single crystals, the langasite powder was synthesized at 135$0^{\circ}C$ for 5hrs and the feed rod was sintered at 135$0^{\circ}C$ for 5hrs. The growing rate was 1.5mm/h and the rotation speed was 15 rpm for an upper rotation and 13 rpm for a lower rotation. In order to prevent the evaporation of gallium oxide, Ar and O2 gas mixture was flowed. The growth direction was analyzed by Laue back-scattered analysis. The composition of grown crystal was analyzed suing XRD and WDS. The electrical properties of grown crystal at various frequencies and temperature were discussed.

• Korean Chemical Engineering Research
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• v.58 no.3
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• pp.369-380
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• 2020

Most mono-crystalline silicon ingots are manufactured by the Czochralski (Cz) process. But If there are oxygen impurities, These Si-ingot tends to show low-efficiency when it is processed to be solar cell substrate. For making single-crystal Si- ingot, We need Czochralski (Cz) process which melts molten Si and then crystallizing it with seed of single-crystal Si. For melts poly Si-chunk and forming of single-crystalline Si-ingot, the heat transfer plays a main role in the structure of Cz-process. In this study to obtain high-quality Si ingot, the Cz-process was modified with the process design. The crystal growth simulation was employed with pulling rate and rotation speed optimization. Studies for modified Cz-process and the corresponding results have been discussed. The results revealed that using crystal growth simulation, we optimized the oxygen concentration of single crystal silicon by the optimal design of the pulling rate, rotation speed and melt charge level of Cz-process.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.29 no.5 s.236
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• pp.643-652
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• 2005

Saturated nucleate pool boiling experiments for binary mixtures, which are consisted of refrigerant R11 and R113, were performed with constant wall temperature condition. Results for binary mixtures were also compared with pure fluids. A microscale heater array and Wheatstone bridge circuits were used to maintain the constant temperature of the heating surface and to obtain heat flow rate measurements with high temporal and spatial resolutions. Bubble growth images were captured using a high speed CCD camera synchronized with the heat flow rate measurements. The departure time for binary mixtures was longer than that for pure fluids, and binary mixtures had a higher onset of nucleate boiling (ONB) temperature than pure fluids. In the asymptotic growth region, the bubble growth rate was proportional to a value between $t^{\frac{1}{6}}$ and $t^{\frac{1}{4}}$. The bubble growth behavior was analyzed to permit comparisons with binary mixtures and pure fluids at the same scale using dimensionless parameters. There was no discernable difference in the bubble growth behavior between binary mixtures and pure fluids for a given ONB temperature. And the departure radius and time were well predicted within a ${\pm}30{\%}$ error. The minimum heat transfer coefficient of binary mixtures occurred near the maximum ${\mid}y-x{\mid}$ value, and the average required heat flux during bubble growth did not depend on the mass fraction of R11 as more volatile component in binary mixtures. Finally, the results showed that for binary mixtures, a higher ONB temperature had the greatest effect on reducing the heat transfer coefficient.

• Journal of Bio-Environment Control
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• v.11 no.1
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• pp.1-4
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• 2002

The occurrence rate of russet in 'Whangkeumbae' pear showed significant difference by years because the russet occurrence is greatly affected by the amount of rainfall. This study was conducted to analyse the relationship between rainfall and russet occurrence by artificial treatment of high humidity. Under high relative humidity condition, stomatal resistance decreased and average fruit weight was higher since the increased net photosynthesis rate accumulation accelerated fruit growth. The russet occurrence began on July 25, when the growth speed of fruit weight and fruit surface is the most fast. Russet occurrence rate was higher in high relative humidity condition because the fruit growth was accelerated. Since the fruit calcium concentration change is extreme in late July, it is assumed that the deceased calcium content is related to the occurrence of russet in 'Whangkeumbae' pear, When the high relative humidity condition is maintained after rainfall, the amount of net photosynthesis rate increase and fruit growth is accelerated. Therefore, the unbalance in the amounts of transferred photosynthesis assimilation product, water and mineral elements would be one of the reasons for the russet occurrence in 'Whangkeumbae' pear.

• Journal of Bio-Environment Control
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• v.14 no.1
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• pp.1-6
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• 2005

A multipurpose operating system was developed to adjust both spray times and ventilation method without a configuration of the moving path and the type of the greenhouse. The multipurpose working system proved to be a reliable system for testing the growth quality of the fruit vegetables in the greenhouse. The results are as follows. The first leaf, diameter of a stem, leaf area, and average stem diameter in the Cucumber seedling growth were repressed by high-speed ventilation, but was not repressed by spray times. The first leaf in the Tomato seedling growth was repressed as ventilation velocity was high, but the average stem diameter was not repressed. While the Tomato was given water three times a day, the diameter of a stem and the leaf area were increased as ventilation speed became higher. However, those were different other factors. The Tomato leaf area was larger when given water twice a day than that in hand spray, but showed no difference with ventilation speed. The first leaf, the diameter of a stem and the leaf area of a Red pepper were lower in automatic spraying with ventilation than those in hand spray.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.949-951
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• 1992

A low pressure DC plasma jet has been used to obtain diamond films from a mixture of $CH_4$ and $H_2$ with high deposition rate (>1$\mu\textrm{m}$/min). The effects of the deposition conditions such as torch geometry, substrate temperature, gas mixing ratio, chamber pressure, axial magnetic field on the diamond film properties such as morphology, purity, uniformity of the film and deposition rate, etc. have been examined with the aid of Scanning Electron Microscopy, X-Ray Diffraction, and Raman Spectroscopy. Both the growth rate and particle size increased rapidly for low methane concentrations but saturated and the morphology changed from octahedral to cubic structure when the concentration exceeded 1.0 %. Higher growth rates (>1.5${\mu}m$/min) can be obtained by applying an axial magnetic field to the DC plasma jet. Diamond obtained from the magnetized plasma jet also shows a sharp peak at 1332.5$cm^{-1}$ in the Raman Spectra and this result implies that higher growth rate with a good quality diamond films can he obtained by applying an external magnetic field to the plasma jet.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.1
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• pp.1-7
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• 2024

β-Ga₂O₃ is a material with a wide band gap of ~4.8 eV and a high breakdown-voltage of 8 MV/cm, and is attracting much attention in the field of power device applications. In addition, compared to representative WBG semiconductor materials such as SiC, GaN and Diamond, it has the advantage of enabling single crystal growth with high growth rate and low manufacturing cost [1-4]. In this study, we succeeded in growing a 10 mm thick β-Ga₂O₃ single crystal doped with 0.3 mol% SnO₂ through the EFG (Edge-defined Film-fed Growth) method using multi-slit structure. The growth direction and growth plane were set to [010]/(010), respectively, and the growth speed was about 12 mm/h. The grown β-Ga₂O₃ single crystal was cut into various crystal planes (010, 001, 100, ${\bar{2}}01$) and surface processed. The processed samples were compared for characteristics according to crystal plane through analysis such as XRD, UV/VIS/NIR/Spec., Mercury Probe, AFM and Etching. This research is expected to contribute to the development of power semiconductor technology in high-voltage and high-temperature applications, and selecting a substrate with better characteristics will play an important role in improving device performance and reliability.

• Journal of Korea Technology Innovation Society
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• v.7 no.2
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• pp.459-479
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• 2004

As the high-speed internet access market steadily nears its maturity phase, growth is quickly tapering off and competition, intensifying. As a result telecommunications companies are at present faced with the urgent need to evolve away from a growth model based on continuous acquisition of new subscribers. The recent convergence of telecommunication and broadcasting has come about precisely at this transitional period in the telecommunications market, and is perceived by the industry both as a new business opportunity and as a threat. TV-based VOD(Video on Demand), for one, is able to attract new customers desiring multimedia services of superior quality and to lock-in existing customers. Meanwhile, the latest evolution in network development is brightening the market prospect for TV-based VOD. The service has now hit the market, deployed over VDSL networks - a next-generation high-speed internet - and advanced cable modem networks, delivering high-definition DVD-quality videos. TV-based VOD is a service whose deployment is closely linked to the evolution of subscriber networks. According to the forecast produced by the present study, based on the forecast on the post-ADSL market and a survey conducted on VOD, as post-ADSL subscribers increase from 1.53 million in 2003 to 4.44 million in 2004, and 9.87 million in 2006, the percentage of post-ADSL subscribers with intention to also subscribe to a VOD service is expected to rise from 16% to 34% in 2006. Accordingly, VOD subscribers are estimated to increase from 0.24 million in 2003 to 0.98 million in 2004 and to 3.35 million in 2006.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.3
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• pp.131-135
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• 2008

This study is to establish the coating technique for synthetic mica and to prepare synthetic mica with the non-aqueous property. The surface coating of synthetic mica is prepared with stearic acid using the high speed stirrer. The characterizations for mica powders coated the stearic acid are carried out by the deposition test, XRD and SEM. The results of research could be coated the stearic acid on the mica by 1600 rpm/min at $70^{\circ}C$ for 10 min. From the observation of SEM was found that the non-aqueous property mica could obtained by mixture ratios for stearic acid and mica, the inner temperature and rotation speed of the stirrer but treated time be unrelated.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.5
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• pp.1104-1109
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• 2015

Due to the rapid growth in digital contents, it is important for us to design a high speed and secure encryption algorithm which is able to comply with the existing and future needs. This paper proposes an alternative approach for self-decimated LM-128 summation sequence generator, which will generate a higher throughput if compared to the conventional generator. We design and implement a threshold clock-controlled LM-128 and prove that it has a lower clock cycle and hence giving a higher key stream generation speed. The proposed threshold clock-control LM-128 generator consists of 256 bits inner state with 128 bits secret key and initialization vector. The cipher achieves a security level of 128 bits to be adapted to the digital contents security with high definition and high quality.