• Journal of Electrical Engineering and Technology
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• v.6 no.1
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• pp.104-110
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• 2011

High-brightness LED control is required for stable operation, thus the driver and control system must be designed to deliver a constant current to optimize reliability and ensure consistent luminous flux. In this paper, the sliding mode current controller is designed to adjust the illumination density of power LEDs. The controller design model of power LEDs, including its driving circuit, is proposed to realize the dimming control of power LEDs. A buck converter is introduced to drive the power LEDs and reduce the input voltage to a lower level. The sliding mode software controller is implemented to adjust the dimming of power LEDs. The proposed strategy for driving power LEDs is investigated and comparatively studied by experiments.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.3
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• pp.7-14
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• 2016

High junction temperature directly or indirectly affects the optical performance and reliability of high power LEDs in many ways. This paper is focused on junction temperature characterization of LEDs. High power LEDs (3W) were tested in temperature steps to reach a thermal equilibrium condition between the chamber and the LEDs. The LEDs were generated by pulsed currents with duty ratios (0.091% and 0.061%) in multiple steps from 0mA and 700mA. The diode forward voltages corresponding to the short pulsed currents were monitored to correlate junction temperatures with the forward voltage responses for calibration measurement. In junction temperature measurement, forward voltage responses at different current levels were used to estimate junction temperatures. Finally junction temperatures in multiple steps of currents were estimated in effectively controlled conditions for designing the reliability of LEDs.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.24-24
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• 2003

Research activity in the III-V nitrides materials system has increased markedly in the past several years ever since high-brightness blue light-emitting diodes (LEDs) became commercially available. Despite of excellent optical properties of the GaN, however, inherently poor thermal property of the sapphire used as a substrate material n these devices may lead to thermal degradation of devices, especially during their high power operation. Therefore, dependable thermal analysis and packaging schemes of GaN-based LEDs are necessary for solid lighting applications under high power operation. In this paper, emphasis will be placed upon thermal design of GaN-based LEDs. Thermal measurements of LEDs on chip and packaging scale were performed using the liquid crystal thermographic technology and micro thermocouples for different bias conditions. By a series of optical arrangement, hot spots with specific transition temperatures were obtained with increasing input power. Thermal design of LEDS was made using the finite element method and analytical unit temperature profile approach with optimal boundary conditions. The experimental results were compared to the simulated data and the results agree well enough for the establishment of dependable prediction of thermal behavior in these devices. The paper will present a more detailed understanding of the thermal analysis of the GaN-based blue and white LEDs for high power applications.

• Journal of Applied Reliability
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• v.12 no.3
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• pp.177-186
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• 2012

This paper presents a comparison of the failure mechanism for high power converted white LEDs(3W) with the commercially available YAG:Ce and silicate phosphor. We carry out the normal aging life test for 10,000 hours, the high temperature aging test for 8,000 hours, the high temperature and humidity aging test for 8,000 hours and the current aging testing for 5,000 hours. The optical and electrical parameters of LEDs were monitored, such as lumen, correlated color temperature (CCT), chromaticity coordinates(x, y), thermal resistance, I -V curve and spectrum intensity. The stress induced a luminous flux decay on LED in all experiments and causes a failure. So we try to find out what's a main failure mechanism for a high power LED.

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.229-233
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• 2015

Currently, the majority of commercial white LEDs are phosphor converted LEDs made of a blue-emitting chip and YAG yellow phosphor dispersed in organic silicone. However, silicone in high-power devices results in long-term performance problems such as reacting with water, color transition, and shrinkage by heat. Additionally, yellow phosphor is not applicable to warm white LEDs that require a low CCT and high CRI. To solve these problems, mixing of green phosphor, red phosphor and glass, which are stable in high temperatures, is common a production method for high-power warm white LEDs. In this study, we fabricated conversion lenses with LUAG green phosphor, SCASN red phosphor and low-softening point glass for high-power warm white LEDs. Conversion lenses can be well controlled through the phosphor content and heat treatment temperature. Therefore, when the green phosphor content was increased, the CRI and luminance efficiency gradually intensified. Moreover, using high heat treatment temperatures, the fabricated conversion lenses had a high CRI and low luminance efficiency. Thus, the fabricated conversion lenses with green and red phosphor below 90 wt% and 10 wt% with a sintering temperature of $500^{\circ}C$ had the best optical properties. The measured values for the CCT, CRI and luminance efficiency were 3200 K, 80, and 85 lm/w.

• Journal of the Optical Society of Korea
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• v.16 no.4
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• pp.349-353
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• 2012

Uniform spreading of injection current in light-emitting diodes (LEDs) is one of the crucial requirements for better device performances. It is reported that non-uniform current spreading leads to low output power, high current crowding, heating, and reliability degradation of the LED device. This paper reports on the effects of different surface and electrode geometries in the LEDs. To increase the output power of LEDs and reduce the series resistance, a rectangular-type LED (RT-LED) with a centered island cathode has been fabricated and investigated by comparison with a conventional LED (CV-LED). The performances of RT-LEDs were prominently enhanced via uniform current spreading and low current crowding. Performances in terms of increased output power and lower forward voltage of simulated RT-LEDs are much superior to those of CV-LEDs. Based on these results, we investigated the correlation between device geometries and optical characteristics through the fabricated CV and RT-LEDs. The measured output power and forward voltage of the RT-LEDs at 100 mA are 64.7% higher and 8% smaller compared with those of the CV-LEDs.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2003.11a
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• pp.169-173
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• 2003

This paper analyzes the effects of various operating voltages on the electrical and light output characteristics of 20mW(5mm-Ф), 1W and 5W high-power RGB LEDs. Operating voltages of three types are compared on a simple LED circuit: DC, full-wave rectified DC. and square-wave DC. As a result, it is found that the 1W and 5W high-power LEDs should be provided with appropriate heat sinks that hold down the increase of junction temperature. As for the operating efficiency the case of full-wave rectification gives the highest value.

• Proceedings of the SAREK Conference
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• 2009.06a
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• pp.1379-1384
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• 2009

High power light emitting diode(LEDs), a strong candidate for the next generation general illumination applications are of interest. With major advantages of power saving, increased life expectancy and faster response time over traditional incandescent bulb, the LEDs are rapidly taking over many applications such as LCD backlighting, traffic light, automotive lighting, signage, etc. The increased electrical currents used to drive the LEDs have focused more attention on the thermal management because the efficiency and reliability of the solid-state lighting devices strongly depend on successful thermal management. There exist some problems that are caused by heat generation in the LED package, such as wire breakage, yellowing of epoxy resin, lifted chip caused by reflow of thermal paste chip attach and interfacial separation between LED package and silicon resin. The goal of this study is to analyze high power LED thermal properties of using pulsating heat pipe.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38C no.8
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• pp.725-732
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• 2013

Recently, various applications for LED lightings are growing continuously due to their better performances such as low power consumption, longer life time, operation speed, controllability, high quality color rendering, and sustainability. However, in developing the high-powered LEDs illumination system, heat-sink problem is one of the important obstacle. In this paper, a heat-sink design with multi-layered structure for high-powered LEDs is proposed, which is composed of metal core PCB, heat-pipes, heat-sink plates, and fans. And also, in this paper, a design for LED controls using DMX512 protocols through RS-485 communications is proposed, which is considered as de facto international standard in LEDs illumination control and is widely used in landscape lighting and stage lighting. In this paper, LED control and its application techniques are introduced and the method of wireless remote control for main controller is proposed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.312-312
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• 2013

GaN based light emitting diodes (LEDs) are important devices that are being used extensively in our daily life. For example, these devices are used in traffic light lamps, outdoor full-color displays and backlight of liquid crystal display panels. To realize high-brightness GaN based LEDs for solid-state lighting applications, the development of p-type ohmic electrodes that have low contact resistivity, high optical transmittance and high refractive index is essential. To this effect, indiumtin oxide (ITO) have been investigated for LEDs. Among the transparent electrodes for LEDs, ITO has been one of the promising electrodes on p-GaN layers owing to its excellent properties in optical, electrical conductivity, substrate adhesion, hardness, and chemical inertness. Sputtering and e-beam evaporation techniques are the most commonly used deposition methods. Commonly, ITO films on p-GaN by sputtering have better transmittance and resistivity than ITO films on p-GaN by e-bam evaporation. However, ITO films on p-GaN by sputtering have higher specific contact resistance, it has been demonstrated that this is due to possible plasma damage on the p-GaN in the sputtering process. In this paper, we have investigated the advanced sputtering using plasma damage-free p-electrode. Prepared the ITO films on the GaN based LEDs by e-beam evaporation, normal sputtering and advanced sputtering. The ITO films on GaN based LEDs by sputtering showed better transmittance and sheets resistance than ITO films on the GaN based LEDs by e-beam evaporation. Finally, fabricated of GaN based LEDs by using advanced sputtering. And compared the electrical properties (measurement by using C-TLM) and structural properties (HR-TEM and FE-SEM) of ITO films on GaN based LEDs produced by e-beam evaporation, normal sputtering and advanced sputtering. As a result, It is expected to form plasma damage free-electrode, and better light output power and break down voltage than LEDs by e-beam evaporation and normal sputter.