• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Proceedings of the Korean Society of Fisheries Technology Conference
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• 2005.05a
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• pp.62-69
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• 2005

Maneuverability of ships has been receiving a great deal of attention both concerning navigation safety and the prediction of ship maneuvering characteristics, to improve it. High-lift device could be applied to design of rudder at design stage. Now, we carried out the flow visualization and inversitgation of flow around a flap rudder (trailing-edge flap). Flow visualization results of flap defection shown as the flow around a NACA0020 Flap Rudder will be conducted in a Circulating Water Channel. The purpose of this investigation will be to investigate the development of the separation region on the flap rudder with the variation of angle of attack and determine the angle of attack at which the flow separates and reattaches.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.42 no.7
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• pp.561-566
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• 2014

Our Korean traditional cultural inheritance Bangpae Kite has the stable rectangular shield shape decorated with artistic paint or poem and a good flight performance due to the central wind hole. In this paper, to analyse the wind hole effect to kite performance we performed the wind tunnel testing of the various design factor of kite model and air flow visualization passing through the wind hole. As the result of aerodynamic analysis, we knew that the wind hole of kite displays similar function of slot system for the wing high lift device. This fact demonstrates that our ancestor understood the function of slot system and applied effectively to the development of kite flight performance.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• v.29 no.1
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• pp.35-40
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• 2005

Maneuverability of ships has been receiving a great deal of attention both concerning navigation safety and the prediction of ship maneuvering characteristics, to improve it. high-lift device could be applied to design of rudder at design stage. Now, we carried out the flow visualization and investigation of flow field around a flap rudder(trailing-edge flap). Flow visualization results of flap defection shown as the flow around a NACA0020 Flap Rudder will be conducted in a Circulating Water Channel. The purpose of this investigation will be to investigate the development of the separation region on the flap rudder with the variation of the angle of attack and determine the angle of attack at which the flow separates and reattaches.

• Journal of the Korean Society of Combustion
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• v.17 no.4
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• pp.5-10
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• 2012

The reformer system is a chemical device that drives the conversion of hydrocarbon to hydrogen rich gas under high temperature environment($600-1,000^{\circ}C$). Generally, NG(Natural Gas) or AOG(Anode Off Gas) is used as fuel of fuel cell reformer combustion system. The experimental study to analyze the combustion characteristics of a premixed ceramic burner used for 0.5-1.0 kW fuel cell reformer was performed. Ceramic burner experiments using NG and AOG were carried out to investigate the flame stability characteristics by heating capacity, equivalence ratio and different fuels respectively. The results show that surface flames can be classified into green, red, blue and lift-off flames as the equivalence ratio of methane-air mixture decreases. And the stable flames can be established using NG and AOG as reformer fuel in the perforated ceramic burner. In particular, the blue flame is found to be stable at a lean equivalence ratio under different mixture conditions of NG and AOG for the 0.5 to 1.0 kW fuel cell system power range. NOx emission is under 60 ppm between 0.70 to 0.78 of equivalence ratio and CO emission is under 50 ppm between 0.70 to 0.84 of equivalence ratio.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.40 no.3
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• pp.206-213
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• 2004

As far as an opening device of fishing gears is concerned, applications of a kite are under development around the world. The typical examples are found in the opening device of the stow net on anchor and the buoyancy material of the trawl. While the stow net on anchor has proved its capability for the past 20 years, the trawl has not been wildly used since it has been first introduced for the commercial use only without sufficient studies and thus has revealed many drawbacks. Therefore, the fundamental hydrodynamics of the kite itself need to ne studied further. Models of plate and canvas kite were deployed in the circulating water tank for the mechanical test. For this situation lift and drag tests were performed considering a change in the shape of objects, which resulted in a different aspect ratio of rectangle and trapezoid. The results obtained from the above approaches are summarized as follows, where aspect ratio, attack angle, lift coefficient and maximum lift coefficient are denoted as A, B, $C_L$ and $C_{Lmax}$ respectively : 1. Given the triangular plate, $C_{Lmax}$ was produced as 1.26${\sim}$1.32 with A${\leq}$1 and 38$^{\circ}$B${\leq}$42$^{\circ}$. And when A${\geq}$1.5 and 20$^{\circ}$${\leq}$B${\leq}$50$^{\circ}$, $C_L$ was around 0.85. Given the inverted triangular plate, $C_{Lmax}$ was 1.46${\sim}$1.56 with A${\leq}$1 and 36$^{\circ}$B${\leq}$38$^{\circ}$. And When A${\geq}$1.5 and 22$^{\circ}$B${\leq}$26$^{\circ}$, $C_{Lmax}$ was 1.05${\sim}$1.21. Given the triangular kite, $C_{Lmax}$ was produced as 1.67${\sim}$1.77 with A${\leq}$1 and 46$^{\circ}$B${\leq}$48$^{\circ}$. And when A${\geq}$1.5 and 20$^{\circ}$B${\leq}$50$^{\circ}$, $C_L$ was around 1.10. Given the inverted triangular kite, $C_{Lmax}$ was 1.44${\sim}$1.68 with A${\leq}$1 and 28$^{\circ}$B${\leq}$32$^{\circ}$. And when A${\geq}$1.5 and 18$^{\circ}$B${\leq}$24$^{\circ}$, $C_{Lmax}$ was 1.03${\sim}$1.18. 2. For a model with A=1/2, an increase in B caused an increase in $C_L$ until $C_L$ has reached the maximum. Then there was a tendency of a very gradual decrease or no change in the value of $C_L$. For a model with A=2/3, the tendency of $C_L$ was similar to the case of a model with A=1/2. For a model with A=1, an increase in B caused an increase in $C_L$ until $C_L$ has reached the maximum. And the tendency of $C_L$ didn't change dramatically. For a model with A=1.5, the tendency of $C_L$ as a function of B was changed very small as 0.75${\sim}$1.22 with 20$^{\circ}$B${\leq}$50$^{\circ}$. For a model with A=2, the tendency of $C_L$ as a function of B was almost the same in the triangular model. There was no considerable change in the models with 20$^{\circ}$B${\leq}$50$^{\circ}$. 3. The inverted model's $C_L$ as a function of increase of B reached the maximum rapidly, then decreased gradually compared to the non-inverted models. Others were decreased dramatically. 4. The action point of dynamic pressure in accordance with the attack angle was close to the rear area of the model with small attack angle, and with large attack angle, the action point was close to the front part of the model. 5. There was camber vertex in the position in which the fluid pressure was generated, and the triangular canvas had large value of camber vertex when the aspect ratio was high, while the inverted triangular canvas was versa. 6. All canvas kite had larger camber ratio when the aspect ratio was high, and the triangular canvas had larger one when the attack angle was high, while the inverted triangluar canvas was versa.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.88-93
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• 2023

As the demand for High Bandwidth Memory (HBM) increases and the handling capability of larger wafers expands, ensuring reliable Total Thickness Variation (TTV) measurement for stacked wafers becomes essential. This study presents the design of a measurement module capable of measuring TTV across the entire area of a 300mm wafer, along with estimating potential mechanical measurement errors. The module enables full-area measurement by utilizing a center chuck and lift pin for wafer support. Modal analysis verifies the structural stability of the module, confirming that both the driving and measuring parts were designed with stiffness exceeding 100 Hz. The mechanical measurement error of the designed module was estimated, resulting in a predicted measurement error of 1.34 nm when measuring the thickness of a bonding wafer with a thickness of 1,500 ㎛.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.40 no.3
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• pp.196-205
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• 2004

As far as an opening device of fishing gears is concerned, applications of a kite are under development around the world. The typical examples are found in the opening device of the stow net on anchor and the buoyancy material of the trawl. While the stow net on anchor has proved its capability for the past 20 years, the trawl has not been wildly used since it has been first introduced for the commercial use only without sufficient studies and thus has revealed many drawbacks. Therefore, the fundamental hydrodynamics of the kite itself need to ne studied further. Models of plate and canvas kite were deployed in the circulating water tank for the mechanical test. For this situation lift and drag tests were performed considering a change in the shape of objects, which resulted in a different aspect ratio of rectangle and trapezoid. The results obtained from the above approaches are summarized as follows, where aspect ratio, attack angle, lift coefficient and maximum lift coefficient are denoted as A, B, $C_L$ and $C_{Lmax}$ respectively : 1. Given the rectangular plate, $C_{Lmax}$ was produced as 1.46${\sim}$1.54 with A${\leq}$1 and 40$^{\circ}$${\leq}$B${\leq}$42$^{\circ}$. And when A${\geq}$1.5 and 20$^{\circ}$${\leq}$B${\leq}$22$^{\circ}$, $C_{Lmax}$ was 10.7${\sim}$1.11. Given the rectangular canvas, $C_{Lmax}$ was 1.75${\sim}$1.91 with A${\leq}$1 and 32$^{\circ}$${\leq}$B${\leq}$40$^{\circ}$. And when A${\geq}$1.5 and 18$^{\circ}$${\leq}$B${\leq}$22$^{\circ}$, $C_{Lmax}$ was 1.24${\sim}$1.40. Given the trapezoid kite, $C_{Lmax}$ was produced as 1.65${\sim}$1.89 with A${\leq}$1.5 and 34$^{\circ}$${\leq}$B${\leq}$44$^{\circ}$. And when A=2 and B=14${\sim}$48, $C_L$ was around 1. Given the inverted trapezoid kite, $C_{Lmax}$ was 1.57${\sim}$1.74 with A${\leq}$1.5 and 24$^{\circ}$${\leq}$B${\leq}$36$^{\circ}$. And when A=2, $C_{Lmax}$ was 1.21 with B=18$^{\circ}$. 2. For a model with A=1/2, an increase in B caused an increase in $C_L$ until $C_L$ has reached the maximum. Then there was a tendency of a gradual decrease in the value of $C_L$ and in particular, the rectangular kite showed a more rapid decrease. For a model with A=2/3, the tendency of $C_L$ was similar to the case of a model with A=1/2 but the tendency was a more rapid decrease than those of the previous models. For a model with A=1, and increase in B caused an increase in $C_L$ until $C_L$ has reached the maximum. Soon after the tendency of $C_L$ decreased dramatically. For a model with A=1.5, the tendency of $C_L$ as a function of B was various. For a model with A=2, the tendency of $C_L$ as a function of B was almost the same in the rectangular and trapezoid model. There was no considerable change in the models with 20$^{\circ}$${\leq}$B${\leq}$50$^{\circ}$. 3. The tendency of kite model's $C_L$ in accordance with increase of B was increased rapidly than plate models until $C_L$ has reached the maximum. Then $C_L$ in the kite model was decreased dramatically but in the plate model was decreased gradually. The value of $C_{Lmax}$ in the kite model was higher than that of the plate model, and the kite model's attack angel at $C_{Lmax}$ was smaller than the plate model's. 4. In the relationship between aspect ratio and lift force, the attack angle which had the maximum lift coefficient was large at the small aspect ratio models, At the large aspect ratio models, the attack angle was small. 5. There was camber vertex in the position in which the fluid pressure was generated, and the rectangular & trapezoid canvas had larger value of camber vertex when the aspect ratio was high, while the inverted trapezoid canvas was versa. 6. All canvas kite had larger camber ratio when the aspect ratio was high, and the rectangular & trapezoid canvas had larger one when the attack angle was high.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.28-32
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• 2009

Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, ${\Phi}_B$) was 107 V and 0.67 eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition and etching method was employed, and the electrical properties of the diodes were improved. The modified SBDs showed enhanced electrical properties, as witnessed by a breakdown voltage of 635 V, a Schottky barrier height of ${\Phi}_B$=1.48 eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of $V_F$=1.6 V, a specific on resistance of $R_{on}=2.1m{\Omega}-cm^2$ and a power loss of $P_L=79.6Wcm^{-2}$.