• Applied Microscopy
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• v.47 no.3
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• pp.203-207
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• 2017

A homogeneous $KNbO_3$ (KN) phase was formed by sintering at $1,040^{\circ}C$ for 1 hour, without formation of the $K_2O$-deficient secondary phase even though suffering the minor loss of $K_2O$. KN liquid phase was formed during sintering and abnormal grain growth occurred in this specimen. The detailed microstructural observations on KN during sintering were carried out using high resolution transmission electron microscopy. The ledged structures were found at the KN grain boundary and the abnormal grain growth was performed by the lateral migration of these ledges in the presence of the liquid phase. The liquid pockets were found in the KN grains. They have various external shapes mainly due to the kinetic factors. They have atomically flat interfaces with some ledges with one atomic height. The slight deficient $K_2O$ by evaporation might somewhat reduce the melting point of KN from the reported at $1,058^{\circ}C$. The liquid pockets play an important role in supplying the liquid phase during the abnormal grain growth in the sintering process of KN ceramics.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.6
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• pp.66-71
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• 1998

High spatial resolution ultrasonic imaging is necessary in several fields of investigation, in order to permit greater precision of clinical diagnosis in the dermatology, ophthalmology etc. We present a B-mode scan system using sector scanning probe of 20MHz center frequency. This developed system allow the high resolution image of 250${\mu}m$ in lateral and 80${\mu}m$ in axial, which of display the size of a $5mm {\times} 5mm$ image with 20 frames/sec. We have shown the images of various structural elements of the human skin and of the nail. We have compared the skin images obtained for each of the different age and we have shown in a general with the age, the atrophy of the skin thickness and the appearance of the abnormal hypoechogene band under epidermis (named SENEB : Sub Epidermal Non Echogene Band).

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.161.6-161
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• 2001

Confocal scanning microscopy (CSM) has an important role as the three-dimensional profiler. An image distribution can be reconstructed by a correlation analysis of spots with the bandwidth of radio frequency. But it is a serious problem for the high performance to align the optical components. Especially, the parasitic motion of focus on the detector gives rise to the fatal distortion of an image profile named the extinction effect while using acousto-optical(AO) deflector. An image profile can be regenerated in CSM with many advantages of non-contact, high speed and high resolution comparatively. In addition to the axial response of the primary focus, the lateral movement of it gives a necessity of the unitary lens to the scanning system. While using the beam deflector, the pupil of beam may be fixed at the nominal position. Furthermore, the use of a deflector may result in ...

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.208-213
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• 2018

Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.10 no.2
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• pp.104-109
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• 2011

I present a method of aspheric surface profile measurement using 2nd derivative of local area profile. This method is based on the principle of curvature sensor which measures the local 2nd derivative under test along a line. The profile is then reconstructed from the data on the each point. Unlike subaperture-stiching method and slope detection method, 2nd derivative method has strong points from a geometric point of view in measuring the aspheric surface profile. The second derivative terms of surface profile is an intrinsic property of the test piece, which is independent of its position and tip-tilt motion. The curvature is measured at every local area with high accuracy and high lateral resolution by using White-light scanning interferometry.

• Journal of the Korean Society for Nondestructive Testing
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• v.19 no.6
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• pp.420-425
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• 1999

Time of flight diffraction(TOFD) method is used in nondestructive tests of piping and pressure vessels because of its advantages over a pulse echo technique: its speed, objectivity, repeatability and its insensitivity to specimen surface conditions and discontinuity orientation. But it is the one of weak points in TOFD method that it has the dead zone in sub-surface resolution induced by lateral waves. We solved the dead-zone problem near the sub-surface by using the deconvolution method and the developed ultrasonic testing system showed high performance.

• Journal of Sensor Science and Technology
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• v.13 no.6
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• pp.430-435
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• 2004

The resolution of the accelerometer, fabricated with MEMS technology is mainly affected by mechanical and electrical noise. To reduce mechanical noise, we have to increase mass of the structure part and quality factor related with the degree of vacuum packaging. On the other hand, to increase mass of the structure part, the thickness of the structure must be increased and ICP-RIE is used to fabricate the high aspect ratio structure. At this time, footing effect make the sensitivity of the accelerometer decreasing. This paper presents a hybrid SOG(Silicon On Glass) Process to fabricate a lateral silicon accelerometer with differential capacitance sensing scheme which has been designed and simulated. Using hybrid SOG Process, we could make it a real to increase the structural thickness and to prevent the footing effect by deposition of metal layer at the bottom of the structure. Moreover, we bonded glass wafer to structure wafer anodically, so we could realize the vacuum packaging at wafer level. Through this way, we could have an idea of controlling of quality factor.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.4
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• pp.65-71
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• 1984

The design formular of optical focusing systems cannot be applied to ultrasonic B scanners, which use broadband pulses instead of continuous wave. In this paper, a calculation method is studied for analyzing the propagation of ultrasonic broadband pulse excited by ultrasonic array transducers. Using the results, seveial design parameters such as the number of transducer elements, delay time, and the focal point are determined to obtain high resolution in the ultrasonic dynamic focusing system. A dynamic focusing system with low-noise switching characteristics; which attains lateral resolution of 2-3mm all along the axial direction up to 18 cm with a 3.5 MHz linear array transducer, was implemented.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1033-1034
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• 2005

High resolution 2.1” QVGA LTPS LCD (190ppi) having high aperture ratio of 65% could be successfully developed using state-of-the-art SLS technology and active/gate storage structure. Cost effective P-MOS 6-Mask structure was used. Full gate and transmission gate circuits are integrated in the panel. The high aperture ratio was obtained by using active/gate capacitance structure, which can reduce storage capacitance area. The aperture ratio was increased to 65% from 49% of conventional gate/data capacitance structure. The brightness was increased from 180cd to 270cd without any degradation of optical properties such as contrast ratio, flicker or crosstalk.

• The Journal of the Acoustical Society of Korea
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• v.30 no.4
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• pp.215-222
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• 2011

In order to obtain high resolution images, a focusing ultrasonic transducer operated in very high frequency (VHF) range was fabricated and its characteristics were evaluated. A 9-${\mu}m$ thick PVDF film with only one metalized surface for electric ground was adhered to a CCP (Copper-clad polyimide) film by using epoxy. It was pressed by a metal ball to form a concave surface and its rear side was filled with the epoxy. The radius of curvature and the f-number of the fabricated transducer are 7.5 mm and 1.7, respectively. The pulse-echo measurement results from a target located at the focal point showed that the frequency bandwidth was 35.0 MHz and the insertion loss near the peak frequency of approximately 40 MHz was about 60 dB. Those values agreed well with the simulation results by the KLM equivalent circuit analysis including the effect of the epoxy bonding layer. When the image of thin copper lines by the 35 MHz transducer of the UBM (Ultrasonic Backscattering Microscope) system was compared with the image by the transducer fabricated in this study, the fabricated transducer was observed that the axial resolution was improved although the lateral resolution was degraded.