• Geomechanics and Engineering
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• 제22권6호
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• pp.541-552
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• 2020

With the increasing tension of current coal resources and the increasing depth of coal mining, the gob-side entry retaining technology has become a preferred coal mining method in underground coal mines. Among them, the technology of the gob-side entry retaining with the high-water filling material can not only improve the recovery rate of coal resources, but also reduce the amount of roadway excavation. In this paper, based on the characteristics of the high-water filling material, the technological process of gob-side entry retaining with the high-water filling material is introduced. The early and late stress states of the filling body formed by the high-water filling materials are analyzed and studied. Taking the 8th floor No.3 working face of Xin'an coal mine as engineering background, the stress and displacement of surrounding rock of roadway with different filling body width are analyzed through the FLAC^3D numerical simulation software. As the filling body width increases, the supporting ability of the filling body increases and the deformation of the surrounding rock decreases. According to the theoretical calculation and numerical simulation of the filling body width, the filling body width is finally determined to be 3.5m. Through the field observation, the deformation of the surrounding rock of the roadway is within the reasonable range. It is concluded that the gob-side entry retaining with the high-water filling material can control the deformation of the surrounding rock, which provides a reference for gob-side entry retaining technology with similar geological conditions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
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• pp.791-792
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• 2006

In motor design, an important factor is the content of silicon in coss material, which can effect the saturation of magnetic circuit and coss loss. While the content of silicon is high, the core loss will be reduced. At the same time, in order to assure the effective flux, the magnetizing current must be increased and then the copper loss becomes higher. Therefore the material with high content of silicon, which is used in the motor, can not always give the high efficiency. In this paper flux linkage of two different material s10 and s60 is compared according to the operating region and then exciting current to obtain same flux is estimated. By comparing core loss and copper loss between two material with the estimated current and flux linkage, this paper presents a criterion in determining the material for higher efficiency

• Bulletin of the Korean Chemical Society
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• 제32권12호
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• pp.4341-4346
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• 2011

Impact sensitivity, one of the most important screening factors for novel high energy density materials (HEDMs), was predicted by use of quantitative structure-property relationship (QSPR) based on the electrostatic potential (ESP) values calculated on the van der Waals molecular surface (MSEP). Among various 3D descriptors derived from MSEP, we utilized total and positive variance of MSEP, and devised a new QSPR equation by combining three other parameters. We employed 37 HEDMs bearing a benzene scaffold and nitro substituents, which were also utilized by Rice and Hare. All the molecular structures were optimized at the B3LYP/6-31G(d) level of theory and confirmed as minima by the frequency calculations. Our new QSPR equation provided a good result to predict the impact sensitivities of the molecules in the training set including zwitterionic molecules.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.239-239
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• 2003

As a result of the recent miniaturization and enhancement in the performance of thin film inductors and thin film transformers, there are increased demands for the thin films with a high magnetic permeability in the high frequency range, a high saturation magnetization, a high electrical resistivity, and a low coercive force. In order to improve high frequency properties, we will investigate anisotropy field by shape and size of pattern. The Fe-Al-O thin films of 16mm diameter and 1$\mu\textrm{m}$ thickness were deposited on Si wafer, using RE magnetron reactive sputtering technique with the mixture of argon and oxygen gases. The fabricating conditions are obtained in the working partial pressure of 2m Torr, O$_2$ partial Pressure of 5%, Input power of 400w, and Al pellets on an Fe disk with purity of 99.9%. For continuous thin film is the 4Ms of 19.4kG, H$\sub$c/ of 0.6Oe, H$\sub$k/ of 6.0Oe and effective permeability of 2500 up to 100MHz. In this work, we expect to enhanced effect of magnetic anisotropy on patterned of Fe-Al-O thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.133-133
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• 2009

It is desirable to choose a high-k material having a large band offset with the tunneling oxide and a deep trapping level for use as the charge trapping layer to achieve high PIE (Programming/erasing) speeds and good reliability, respectively. In this paper, charge trapping and tunneling characteristics of high-k hafnium oxide ($HfO_2$) layer with various thicknesses were investigated for applications of tunnel barrier engineered nonvolatile memory. A critical thickness of $HfO_2$ layer for suppressing the charge trapping and enhancing the tunneling sensitivity of tunnel barrier were developed. Also, the charge trap centroid and charge trap density were extracted by constant current stress (CCS) method. As a result, the optimization of $HfO_2$ thickness considerably improved the performances of non-volatile memory(NVM).

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.125-128
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• 2012

We fabricated the electrolyte-insulator-semiconductor (EIS) devices with various high-k sensing membranes to realize a high quality pH sensor. The sensing properties of each high-k dielectric material were compared with those of conventional $SiO_2$ (O) and $SiO_2/Si_3N_4$ (ON) membranes. As a result, the high-k sensing membranes demonstrated better sensitivity and stability than the O and ON membranes. Especially, the $SiO_2/HfO_2$ (OH) stacked layer showed a high sensitivity and the $SiO_2/Al_2O_3$ (OA) stacked layer exhibited an excellent chemical stability. In conclusion, the high-k sensing membranes are expected to have excellent operating characteristics in terms of sensitivity and chemical stability for the biosensor application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.206-209
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• 2003

The purpose of AR and HR coating is acquire the very low reflection rate and the high reflection rate through the deposition of a thin film using the refraction ofmaterial. Basically if the high refractive material and the low refractive material are chosen and the condition for the experiment is determined, then we solve theproject with the optical design and multi thin film coating. First of all, we choose $SiO_2$for the low refractive material and $TiO_2$ for the high refractive material and apply Sputtering System easy to control the refraction rate and excellent in reconstruction to the equipment of thin film multiplication. For the control of the refraction rate and growth rate we modify RF Power and the ratio of Gas(Ar:O2), And we use Ellipsometer for estimation and analysis of the refraction rate and growth rate and AFM&SEM for the analysis of surface and component.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1284-1285
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• 2006

We reported a P/M soft magnetic material with core loss value of $W_{10/1k}=68W/kg$, which is lower than that of 0.35mm-thick laminated material, by using high purity gas-atomized iron powder. Lack of mechanical strength and high cost of powder production are significant issues for industrial use. In order to achieve both low core loss and high strength by using inexpencive powder, the improvement of powder shape and surface morphology and binder strength was conducted. As the result, the material based on water-atomized powder with 80 MPa of TRS and 108 W/kg of core loss (W10/1k) was achieved.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.558-561
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• 2001

Vanadium oxide ($VO_x$) thin films are very good candidate material for uncooled infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_x$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than $1000{\AA}$. This paper presents a new fabrication process of $VO_x$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}(100{\AA})/V(80{\AA})/VO_{x}(500{\AA})$ by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than $-2%/^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.558-561
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• 2001

Vanadium oxide ($VO_{x}$) thin films are very good candidate material for uncooked infrared (IR) detectors due to their high temperature coefficient of resistance (TCR) at room temperature. But, the deposition of $VO_{x}$ thin films showing good electrical properties is very difficult in micro bolometer fabrication process using sacrificial layer removal because of its low process temperature and thickness of thin films less than 1000${\AA}$. This paper presents a new fabrication process of $VO_{x}$ thin films having high TCR and low resistance. Through sandwich structure of $VO_{x}$(100${\AA}$)/V(80${\AA}$)/$VO_{x}$(500${\AA}$) by sputter method and post-annealing at oxygen ambient, we have achieved high TCR more than -2%/$^{\circ}C$ and low resistance less than $10K\Omega$ at room temperature.