• New Physics: Sae Mulli
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• v.68 no.11
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• pp.1167-1172
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• 2018

Carbon nanotubes (CNTs) are structures of carbon atoms bonded together in hexagonal honeycomb shapes, with multi-walled CNTs having a very high thermal conductivity of $3000W/m{\cdot}K$ and single-walled CNTs having a conductivity of $6000W/m{\cdot}K$. In this work, the transmittance and the thermal diffusivity of a multi-walled carbon nanotube dispersion with a concentration of 1.5 M were measured using a single beam method, a dual beam method, and the thermal lens effect. The nonlinear optical coefficients were obtained by using the z-scan method, which moved the sample in the direction of propagation of the single laser beam, propagation and the thermal diffusivity was measured using a double laser beam. As a pump beam, a diode-pumped solid state (DPSS) laser with a wavelength of 532 nm and an intensity of 100 mW was used. As the probe beam, a He-Ne laser having a wavelength of 633 nm and an intensity of 5 mW was used. The experimental result shows that when the concentrations of the sample were 9.99, 11.10, 16.65, and 19.98 mM, the nonlinear absorption coefficients were 0.046, 0.051, 0.136 and 0.169 m/W, respectively. Also, the nonlinear refractive indices were 0.20, 0.51, 1.25 and $1.32{\times}10^{-11}m^2/W$, respectively, and the average thermal diffusivity was $1.33{\times}10^{-6}m^2/s$.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.103-108
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• 2004

High-quality ZnO films were grown on sapphire (001) substrates by the atomic layer epitaxy (ALE) technique using DEZn as a Zinc precusor and $H_2O $ as an oxidant at both $170^{\circ}C$ and $400^{\circ}C$ which are in the ALE and the CVD process temperature ranges, respectively. The films were annealed in an oxygen atmosphere in the temperature range from 600 to 100$0^{\circ}C$ for an hour and then investigate photoluminescence (PL) properties using He-Cd laser. PL intensity tends to increases as the annealing temperature increase for both the annealed ZnO films grown at $170^{\circ}C$ and $400^{\circ}C$ , while PL did not nearly occur at the as-deposited ones. The PL intensity of the ZnO film grown at $400^{\circ}C$ is low after it is annealed at high temperature owing to a large number of Zn-Zn bonds although it has increased in the visible light wavelength region after annealing. In contrast the PL intensity has increased significant in the visible light region after annealing

• Journal of Sensor Science and Technology
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• v.11 no.6
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• pp.371-377
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• 2002

$Y_2O_3:Eu^{3+}$ and Li-doped $Y_2O_3:Eu^{3+}$ thin films have been grown on sapphire substrates using a pulsed laser deposition technique. The thin film phosphors were deposited at a substrate temperature of $600^{\circ}C$ under the oxygen pressure of 100, 200 and 300 mTorr. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity and photoluminescence (PL) of the films are highly dependent on the oxygen pressure. The PL brightness data obtained from $Y_2O_3:Eu^{3+}$ films grown under optimized conditions have indicated that sapphire is one of the most promising substrate for the growth of high quality $Y_2O_3:Eu^{3+}$ thin film red phosphor. In particular, the incorporation of $Li^{+}$ ions into $Y_2O_3$ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with LiF-doped $Y_{1.84}Li_{0.08}Eu_{0.08}O_3(Y_2O_3LiEu)$, whose brightness was increased by a factor of 2.7 in comparison with that of $Y_2O_3:Eu^{3+}$ films. This phosphor may promise for application to the flat panel displays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1033-1036
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• 2004

Si nanocrystallites thin films on p-type (100) Si substrate have been fabricated by pulsed laser deposition using a Nd:YAG laser. After deposition, samples were annealed at the temperatures of 400 to $800^{\circ}C$. Hydrogen passivation was then performed in the forming gas (95% $N_2$ + 5% $H_2$) for 1 hr. Strong violet-indigo photoluminescence has been observed at room temperature from nitrogen ambient-annealed Si nanocrystallites. The variation of photoluminescence (PL) Properties of Si nanocrystallites thin films has been investigated depending on annealing temperatures with hydrogen passivation. From the results of PL, Fourier transform infrared (FTIR), and high-resolution transmission electron microscopy (HRTEM) measurements, it is observed that the origin of violet-indigo PL from the nanocrystalline silicon in the silicon oxide film is related to the quantum size effect of Si nanocrystallites and oxygen vacancies in the SiOx(x : 1.6-1.8) matrix affects the emission intensity.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.19 no.6
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• pp.834-840
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• 2010

Photo lithography process is very important technology to fabricate highly integrated micro patterns with high precision for semiconductor and display industries. Up to now, mask type lithography process has been generally used for this purpose; however, it is not efficient for small quantity and/or frequently changing products. Therefore, in order to obtain higher productivity and lower manufacturing cost, the mask type lithography process should be replaced. In this study, a maskless lithography system using the DMD(Digital Micromirror Device) is developed, and the exposure condition and optical properties are analyzed and simulated for a single beam case. From the proposed experimental conditions, required exposure experiments were preformed, and the results were investigated. As a results, 10${\mu}m$ spots can be generated at optimal focal length.

• Journal of Mechanical Science and Technology
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• v.16 no.7
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• pp.999-1008
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• 2002

The spray structures and distribution characteristics of liquid and vapor phases in non-evaporating and evaporating Gasoline Direct Injection (GDI) fuel sprays were investigated using Laser Induced Exciplex Fluorescence (LIEF) technique. Dopants were 2% fluorobenzene and 9% DEMA (diethyl-methyl-amine) in 89% solution of hexane by volume. In order to study internal structure of the spray, droplet size and velocity under non-evaporating condition were measured by Phase Doppler Anemometry (PDA). Liquid and vapor phases were visualized at different moments after the start of injection. Experimental results showed that the spray could be divided into two regions by the fluorescence intensity of liquid phase: cone and mixing regions. Moreover, vortex flow of vapor phase was found in the mixing region. About 5㎛ diameter droplets were mostly distributed in the vortex flow region. Higher concentration of vapor phase due to vaporization of these droplets was distributed in this region. Particularly, higher concentration of vapor phase and lower one were balanced within the measurement area at 2ms after the start of injection.

• Journal of the Korean Society of Visualization
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• v.11 no.1
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• pp.41-47
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• 2013

Turbulence properties of a cylinder wake (d=10 mm) have been investigated with a new volume PTV algorithm. The measurement system consists of two-high-cameras(1 $k{\times}1$ k), a Nd-Yag laser and a host computer. A fitness function representing three-dimensional coherency has been adopted to sort out spurious vectors. A hybrid fitness function representing the relations between the fitness and the three-dimensional shortest distances constructed by the two collinears of the two cameras has been also adopted. The constructed algorithm has been employed for the measurements of the cylinder wakes. The Reynolds numbers tested in this paper are 360, 540, 720, 900, 1080 and 1260. More than 10,000 instantaneous 3D vectors have been obtained by the constructed system. The volumetric distributions of the turbulence intensities (for u', v', w') indicate that clearly different patterns for all Reynolds numbers and imply that a regular pattern (like a similarity rule) for the turbulent properties exists.

• Korean Journal of Optics and Photonics
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• v.6 no.4
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• pp.365-372
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• 1995

A signal processing technique for interferometric fiber-optic sensors is proposed. It does not require a any special optic components such as phase modulator, $3times3$ couplers,to obtain the full sensitivity of the interferometer. Instead, it requires a reference interferometer for phase referencing and a reference mirror for intensity referencing, but intensity referencing can be done without using the r reference mirror. The new technique utilizes the frequency chirping of the laser diode to process t the sensor signal with both wide dynamic range and high sensitivity of the interferometer. It was a applied to an internal-mirrored FP interferometric temperature sensor to obtain the system noise of $4\times10^{-3\circ}C$ from I cm FP Interferometor sensor device.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.612-619
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• 2002

The dynamic behavior of Al-Mg alloys plasma was very unstable and this instability was closely related to the unstable motion of keyhole during laser irradiation. The keyhole fluctuated both in size and shape and its fluctuation period was about 440 ${\mu}{\textrm}{m}$. This instability has been estimated to be caused by the evaporation phenomena of metals with different boiling point and latent heats of vaporization. Therefore, the authors have conducted the spectroscopic diagnostics of plasma induced in the pulsed YAG laser welding of Al-Mg alloys in air and argon atmospheres. In the air environment, the identified spectra were atomic lines of Al, Mg, Cr, Mn, Cu, Fe and Zn, and singly ionized Mg line, as well as strong molecular spectrum of AlO, MgO and AIH. It was confirmed that the resonant lines of Al and Mg were strongly self-absorbed, in particular in the vicinity of pool surface. The self-absorption of atomic Mg line was more eminent in alloys containing higher Mg. These facts showed that the laser-induced plasma was relatively a low temperature and high density metallic vapor. The intensities of molecular spectra of AlO and MgO were different each other depending on the power density of laser beam. Under the low power density irradiation condition, the MgO band spectra were predominant in intensity, while the AlO spectra became much stronger in higher power density. In argon atmosphere the band spectra of MgO and AlO completely vanished, but AlH molecular spectra was detected clearly. The hydrogen source was presumably the hydrogen solved in the base Metal, absorbed water on the surface oxide layer or H$_2$ and $H_2O$ in the shielding gas. The temporal change in spectral line intensities was quite similar to the fluctuation of keyhole. The time average plasma temperature at 1 mm high above the surface of A5083 alloy was determined by the Boltzmann plot method of atomic Cr lines of different excitation energy. The obtained electron temperature was 3, 280$\pm$150 K which was about 500 K higher than the boiling point of pure aluminum. The electron number density was determined by measuring the relative intensities of the spectra1lines of atomic and singly ionized Magnesium, and the obtained value was 1.85 x 1019 1/㎥.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.1
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• pp.112-117
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• 2004

$Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$(x=0.0, 0.3, 0.6, 1.0, 1.4) luminescent thin films have been grown on Si (100) substrates using pulsed laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity, the surface morphology and photoluminescence (PL) of the films are highly dependent on the amount of Gd. The photoluminescence (PL) brightness data obtained from $Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$ films grown under optimized conditions have indicated that Si (100) is one of promised substrates for the growth of high quality $Y_2$$_{-x}$G $d_{x}$ $O_3$:E $u^{3+}$ thin film red phosphor. In particular, the incorporation of Gd into $Y_2$ $O_3$ lattice could induce a remarkable increase of PL. The highest emission intensity was observed with $Y_{1.35}$G $d_{0.60}$ $O_3$: $E^{3+}$, whose brightness was increased by a factor of 1.95 in comparison with that of $Y_2$ $O_3$:E $u^{3+}$ films.3+/ films.films.lms.