• Title/Summary/Keyword: High-Temperature Superconductor

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Linear Temperature Dependence of Magnetic Penetration Depth Length at Low T in an Isotropic Superconductor

  • Nam, Sang-Boo
    • Progress in Superconductivity
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    • v.2 no.1
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    • pp.11-14
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    • 2000
  • The notion of the finite pairing interaction energy range Td is shown to result in a linear temperature dependence of the London magnetic penetration depth length, ${\Delta}{\lambda}{/\lambda}(0)=(T/Td)2/\pi)ln2$ at low T in the case of the s-wave pairing state, accounting for data of high Tc superconductor by Hardy et al.

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Characteristics Simulation of Electronics Cooling for a High-Temperature Superconducting Flux Flow Transistor Circuit (고온 초전도 자속흐름 트랜지스터에 적용된 전자냉각 특성 시뮬레이션)

  • Ko, Seok-Cheol;Kang, Hyeong-Gon;Lim, Sung-Hun;Du, Ho-Ik;Lee, Jong-Hwa;Han, Byoung-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.1063-1066
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    • 2002
  • An equivalent circuit for the superconductor flux flow transistor(SFFT) was combined with high temperature cooling device, based on the analogy between thermal and electrical variables using the high-temperature superconductor(HTS), is proposed. The device is composed of parallel weak links with a nearby magnetic control line. A model has been developed that is based on solving the equation of motion of Abrikosov vortices subject to Lorentz viscous and pinning forces as well as magnetic surface barriers. The use of thermal models the global performance of thermal cooling circuit and signal system to be checked by using electrical circuit analysis programs such as SPICE.

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A Study on the Phase Formation Process in Bi-system Superconductor with Heat Treatment Conditions (열처리 조건에 따른 Bi계 초전도체에서 상 생성 과정에 대한 연구)

  • 정진인;이준웅;박용필
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.221-223
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    • 1999
  • In this work, samples were manufactured variously by changing conventional calcining and sintering conditions and we tried the utilization by making the heat treatment time, which is demanded to high-Tc phase formation, much shorter. We found out optimal heat treatment conditions with the analysis on formation process at superconducting phase in term of the change of calcining and sintering time and then, examined X-ray diffraction(XRD) patterns, scanning electron microscope(SEM) measurement and energy dispersive X-ray spectrometer(EDX) of the samples manufactured under heat treatment conditions which we suggest here. As a result, 2223 high-$T_c$, phase of (Bi,Pb)SrCaCuO superconductor starting with ($Bi_l$ xPbx,)$_2$$Sr_2$$Ca_2$$Cu_3$$O_y$, composition was formed from 1 hr sintering sample at temperature nearby melting point and also the completed sample with calcining and sintering time of 9 hr was formed high-$T_c$.low-$T_c$ phase appearing in sight above the critical temperature of liquid $N_2$.

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A study on the fabrication and characterization of high temperature superconducting(HTS) tapes in Bi-System (Bi-계 고온초전도 선재의 제조 및 특성 연구)

  • 정년호;성태현;한영희;한상철;이준성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.474-477
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    • 2002
  • We performed a continuous heat treatment experiment for long Si$_2$Sr$_2$CaCuO$_{x}$ (Bi2212) superconductor tapes on copper substrates. A precursor that contains a mixture of Bi$_2$O$_3$, SrCO$_3$, and CaCO$_3$ powders was prepared and screen-printed on Cu tapes. The screen- printed tapes were thermally treated by consecutive processes with various temperature settings using an air-filled tube furnace. The diffraction patterns and the microstructures of the high temperature superconductor thick films were analyzed by X-ray diffractometry (XRD) and optical Microscopy respectively, and the critical temperatures of the superconducting thick films were measured. The critical temperatures of the superconducting films were measured to be about 77K, and the films'crystallographic c-axes were confirmed to be normal to the film surfaces by XRD and morphology observation. We also observed that the thick superconducting layer is formed and aligned on the copper substrate via partial melted state that consists of a liquid phase and a secondary phase.e.

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Junction, Circuit and System Developments for a High-Tc Superconductor Sampler

  • Hidaka, M.;Satoh, T.;Tahara, S.
    • 한국초전도학회:학술대회논문집
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    • v.9
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    • pp.13-15
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    • 1999
  • A Josephson sampler circuit using high-Tc superconductor (HTS) ramp-edge junctions has been designed, fabricated, and experimentally tested. It consists of five ramp-edge junctions with a stacked groundplane and is based on single-flux-quantum (SFQ) operations. The sampler was used to measure current waveforms at picosecond and microampere resolutions. We are developing a system based on the sampler for measuring the current waveform in a room-temperature sample. And measuring current flowing through wiring in a semiconductor large-scale integrated circuit is a promising application for the HTS sampler system.

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Junction, Circuit and System Developments for a High-$T_c$ Superconductor Sampler

  • Hidaka, M.;Satoh, T.;Tahara, S.
    • Progress in Superconductivity
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    • v.1 no.2
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    • pp.81-84
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    • 2000
  • A Josephson sampler circuit using high-Tc superconductor (HTS) ramp-edge junctions has been designed, fabricated, and experimentally tested. It consists of five ramp-edge junctions with a stacked groundplane and is based on single-flux-quantum (SFQ) operations. The sampler was used to measure current waveforms at picosecond and microampere resolutions. We are developing a system based on the sampler for measuring the current waveform in a room-temperature sample. And measuring current flowing through wiring in a semiconductor large-scale integrated circuit is a promising application for the HTS sampler system.

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DC V-I Characteristics of a High Temperature Superconductor for a 600 kJ Superconducting Magnetic Energy Storage Device in an Oblique External Magnetic Field (경사 외부자장에 대한 600 kJ급 SMES용 HTS도체의 DC V-I 특성)

  • Li, Zhu-Yong;Ma, Yong-Hu;Ryu, Kyung-Woo;Choi, Se-Yong;Kim, Hae-Jong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.1
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    • pp.79-84
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    • 2008
  • We are developing a small-sized high temperature superconducting magnetic energy storage (HTS-SMES) magnet with the nominal storage capacity of 600 kJ, which provides electric power with high quality to sensitive electric loads. Critical current and N-value of a high temperature superconductor with large current, which was selected for the development of the 600 kJ HTS-SMES magnet, were investigated in various oblique external magnetic fields. Based on the critical current and N-value measured for the short sample conductor, we discussed the DC V - I characteristic of a model coil fabricated with the same conductor of 500 m. The results show that the measured critical current and N-value of the conductor for parallel field are constant in external magnetic fields less than about 0.2 T. However, for oblique fields, its critical current and N -value abruptly decrease in all external magnetic fields. Moreover, the measured critical current of the model coil well agrees with the numerically calculated one based on the DC V - I characteristic measured for the short sample conductor. This suggest that losses and critical currents for an HTS-SMES magnet made up of a high temperature superconductor with anisotropic characteristic are predictable from the data of a short sample conductor.

Current Leads Fabrication of High $T_c$ Bi System Superconductor Using Rapid Cooling Method (급속응고법을 이용한 Bi 계 고온초전도체 전류도입선 제조)

  • 박용민;한진만;류운선;류운선
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.3
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    • pp.254-258
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    • 2000
  • Current leads of high $T_{c}$ superconductor were fabricated with Bi excess B $i_{2.2}$/S $r_{1.8}$/C $a_{1}$/C $u_{2}$/ $O_{x}$ composition by rapid cooling method. The dimensions of final samples were fixed 3 mm and 8 mm diameter with 50 mm length each To control uniform density the samples were preformed by CIP(Cold Isostatic Press) process and followed by partial or full melting process after raising up to 90$0^{\circ}C$ for 30min. Plate shaped microstructure was clearly observed adjacent to the Ag tube wall and the size of plate was about 100$\mu$m. However the severe destruction of growth orientation was shown in the inner growth part. critical temperature ( $T_{c}$) was about 53~71K after directional growth while Tc was decreased about 77~80 K before directional growth. After directional growth critical current( $I_{c}$) and critical current density( $J_{c}$) in the specimen of 8 mm diameter at 50 K were about 110 A and 280 A/c $m^2$ respectively.pectively.ely.

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The Effect of a High Temperature Superconducting Patch on a Rectangular Microstrip Antenna

  • Chebbara, Fouad;Amir, Mounir;Fortaki, Tarek
    • Journal of Electrical Engineering and Technology
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    • v.4 no.2
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    • pp.277-281
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    • 2009
  • The complex resonant frequency problem of a superconductor patch is formulated in terms of an integral equation which is the kernel of a dyadic Green's function. To include the effect of the superconductivity of the microstrip patch, the surface complex impedance of the superconductor film is introduced using the two fluids model of Gorter and Casimir. The Galerkin procedure is used in the resolution of the electric field integral equation. Numerical results concerning the effect of the operating temperature of a superconductor patch on the characteristics of the antenna are presented.

EPR Spectrum of the High-Temperature Superconductor $YBa_2Cu_3O_{7-x}$ Doped with Ytterbium

  • Hwang Sonjong;So Hyunsoo
    • Bulletin of the Korean Chemical Society
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    • v.10 no.1
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    • pp.23-26
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    • 1989
  • EPR spectra of the high-temperature superconductor YBa_2Cu_3O_{7-x}$ doped with ytterbium have been measured at 77-300K. The superconducting, orthorhombic phase shows a spectrum at g = 2.08 (Spectrum O). As the temperature is lowered, another line ascribable to $Yb^{3+}$ grows gradually at g = 3.31. The intensity of Spectrum O was determined using Yb as the internal reference. The semiconducting, tetragonal phase shows a spectrum at g = 2.06 (Spectrum T), different from Spectrum O. The origins of these spectra are discussed.