• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.6
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• pp.201-204
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• 2007

In this paper, fully embedded and miniaturized diplexer device has been developed and characterized for dual-band/mode CDMA handset applications. The size of the embedded diplexer is significantly reduced by embedding high Q circular spiral inductors and high DK MIM capacitors into a low cost organic package substrate. The fabricated diplexer has insertion losses and isolations of -0.5 and -23 dB at 824-894 MHz and -0.7 and -22 dB at 1850-1990 MHz, respectively. Its size is $3.9mm{\times}3.9mm{\times}0.77mm$. The fabricated diplexer is the smallest one which is fully embedded into a low cost organic package substrate.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.3
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• pp.343-354
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• 2012

In this paper, various spiral zeroth-order resonators are proposed for wireless power transmission. Since a zerothorder resonance(ZOR) mode of meta-material transmission lines has the characteristic of an infinite wavelength, its frequency is independent of physical length. Also, to obtain high transmission efficiencies high-Q resonators and strong coupling coefficient between coupled resonators are required. Therefore, the resonators consist of spiral inductor and lumped capacitor to use the ZOR mode and they are optimized via parametric study and circuit analysis for a high-Q resonator design. The optimized resonators are simulated and compared with a conventional spiral resonator and one of them was fabricated and measured. The fabricated one has a dimension of $20cm{\times}20cm{\times}8cm$($0.009{\lambda}_0{\times}0.009_{\lambda}_0{\times}0.004{\lambda}_0$) and the transmission efficiency of 80 % is measured at 13.56 MHz at transmitted distance of 40 cm.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.178-182
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• 2003

This paper presents the embedded inductors in PCB (Printed Circuit Board) for PAM(Power Amplifier Module) of mobile terminations. The inductors are designed, simulated, and compared to conventional chip inductors. The Quality factor(Q) and self-resonance frequency(SRF) of the inductors are evaluated. The quality factors of the inductors are two times higher than those of the chip inductors, and the self-resonance frequency is 1.3 times higher than those of chip inductors at the inductance of 2.7 nH and 3.3 nH respectively.

• Journal of Power Electronics
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• v.13 no.5
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• pp.779-786
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• 2013

A highly efficient sustaining driver is proposed for plasma display panels (PDPs). When the PDP is charged and discharged, the proposed sustaining driver employs an address voltage source used in an addressing period. A voltage source is used for fully charging the panel to the sustaining voltage, and an initial inductor current helps the panel discharge to 0 V. The resonance between the panel and an inductor is made by shifting the voltage and current bias level when charging and discharging the panel. As a result, the proposed circuit can reduce power consumption, switching loss, heat dissipation, and production cost. Experimental results of a 42-inch PDP are provided to verify the operation and features of the proposed circuit.

• Journal of the Korean Magnetics Society
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• v.11 no.3
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• pp.109-113
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• 2001

Presently, an inductor adapted at MMIC (Monolithic Microwave Integrated Circuit) which is used for cellular phone or PHS operates at quasi-microwave range over 800 MHz. However, a W-CDMA (Wideband Code Division Multiple Access) will use about 2 GHz range. Therefore magnetic film device should be compatible up to 2 GHz. We have deposited Co-Pd-Al-O system film using rf sputtering method which is expected up to 2 GHz, and investigated the effect of Pd content and magnetic field annealing. When Pd composition is 19%, Hk was 118 Oe, and ${\mu}$′showed flat frequency characteristics up to 1.5 GHz. The Q factor (=${\mu}$′/${\mu}$") was 23.3 at 1 GHz, 6.7 at 1.5 GHz and 1.5 at 2 GHz, respectively. Resonance frequency was 2 GHz. Therefore Co-Pd-Al-O thin film could be used at over 1 GHz, and also expected as an inductor material for wide band CDMA type cellular phone.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.5 s.120
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• pp.530-538
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• 2007

An inductor library for efficient low cost RFIC design has been developed based on a standard digital 0.18 ${\mu}m$ CMOS process. The developed library provides four structural variations that are most popular in RFIC design; standard spiral structure, patterned ground shield(PGS) structure to enhance quality factor, stacked structure to enable high inductance values in a given silicon area, multilayer structure to lower series resistance. Electromagnetic simulation, equivalent circuit, and parameter extraction processes have been verified based on measurement results. The extensive measurement and simulation results of the inductor library can be a great asset for low cost RFIC design and development.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.840-846
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• 2000

In this work, small-size, high-performance solenoid-type RF chip inductors utilizing a low-loss Al$_2$O$_3$core material were investigated. The size of the chip inductors fabricated in this work were 15$\times$10$\times$0.7㎣, 2.1$\times$1.5$\times$10㎣, and 2.4$\times$2.0$\times$1.4㎣ and copper (Cu) wire with 40 ㎛ diameter was used as the coils. High frequency characteristics of the inductance, quality factor, and impedance of developed inductors were measured suing an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). It was observed that the developed inductors with the number of turns of 7 have the inductance of 33 to 100nH and exhibit the self-resonant frequency (SRF) of .26 to 1.1 GHz. The SRF of inductors decreases with increasing the inductance and the inductors have the quality factor of 60 to 80 in the frequency range of 300 MHz to 1.1 GHz. In this study, small-size solenoid-type RF chip inductors with high inductance and high quality factor were fabricated successfully. It is suggested that the thin film-type inductor is necessary to fabricate the smaller size inductors at the expence of inductance and quality factor values.

• Journal of the Korean Magnetics Society
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• v.15 no.1
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• pp.30-36
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• 2005

Recently, It has been reported that the spin sprayed ferite film shows better magnetic properties at high frequeny that the ferrite by co-firing over $800^{\circ}C$ . Besides, there is no limitation to select the substrate materials because it can be processed with relatively low temperature below $100^{\circ}C$. Therefore, we fabricated film inductor as a passive device for DC-DC converter by a use of spin sprayed embedded form was completed by via hole process of pad opening. Saturation magnetization of 0.61 T and real part of permeability of 110 were obtained in Ni-Zn ferrite. In addition, inductance of 1.52 ${\mu}H$, quality factor of 24.3 at 5 MHz were measured with spiral 16 turn inductor. The rated current of inductor was 863 mA.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.3
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• pp.60-68
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• 2001

본 논문에서는 최근 초소형 기술로 각광받고 있는 MEMS(MicroElectroMechanical System) 기술을 이용한 무선통신 분야의 응용을 제고한다. RF ME- MS 기술은 기존의 기술들에 비해 크기나 전력소모, 삽입손실 등에서 우수한 고주파 특성을 갖는 소자 나 부품을 만들 수 있으며 특히 휴대용 단말기에 적 용 가능한 RE 부품들 즉 저손실 전송선로, 스위치, High Q inductor, 안테나 등의 주요 부품에 대한 연 구가 많이 이루어지고 있다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.8
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• pp.805-808
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• 2011

This paper presents a design of high-efficiency and high-power class E power transmitter. The transmitter is composed of 300 Watt class E power amplifier and AC-DC converter. The AC-DC converter converts 220 V and 60 Hz AC to a 290 V DC. The generated DC voltage is directly applied to a bias of the class E power amplifier. Because the converter does not have DC-DC converter unit, it has very high conversion efficiency of about 98.03 %. To minimize the loss at the output of the power amplifier, high-Q inductor was implemented and deployed to the output resonant circuit. As a result, the 13.56 MHz class E power amplifier has a high power-added efficiency of 84.2 % at the peak output power of 323.6 W. The overall efficiency of class E power transmitter, including the AC-DC converter, is as high as 82.87 %.