• Journal of Power Electronics
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• v.15 no.6
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• pp.1508-1516
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• 2015

A single phase H-bridge inverter is employed in conventional Inductive Power Transfer (IPT) systems as the primary side power supply. These systems may not be suitable for some high power applications, due to the constraints of the power electronic devices and the cost. A high-frequency cascaded multi-level inverter employed in IPT systems, which is suitable for high power applications, is presented in this paper. The Phase Shift Pulse Width Modulation (PS-PWM) method is proposed to realize power regulation and selective harmonic elimination. Explicit solutions against phase shift angle and pulse width are given according to the constraints of the selective harmonic elimination equation and the required voltage to avoid solving non-linear transcendental equations. The validity of the proposed control approach is verified by the experimental results obtained with a 2kW prototype system. This approach is expected to be useful for high power IPT applications, and the output power of each H-bridge unit is identical by the proposed approach.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.71-78
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• 2014

Silicon has been most widely used semiconductor material for power electronic systems. However, Si-based power devices have attained their working limits and there are a lot of efforts for alternative Si-based power devices for better performance. Advances in power electronics have improved the efficiency, size, weight and materials cost. New wide band gap materials such as SiC have now been introduced for high power applications. SiC power devices have been evolved from lab scale to a viable alternative to Si electronics in high-efficiency and high-power density applications. In this article, the potential impact of SiC devices for power applications will be discussed along with their Si counterpart in terms of higher switching performance, higher voltages and higher power density. The recent progress in the development of high voltage power semiconductor devices is reviewed. Future trends in device development and industrialization are also addressed.

• Proceedings of the KIPE Conference
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• 2010.07a
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• pp.37-38
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• 2010

For MHz-class high frequency inverter in wireless power transfer applications, the voltage/current surges can be occurred in power stage when driving on the inverter. And also, the high-frequency oscillations can be produced at a high switching frequency due to the parasitic elements. The voltage and current stresses of the switching devices lead to the switching losses. The efficiency of the high frequency inverter will be reduced. And the inverter circuit with the sudden voltage and current fluctuations also generates the noise such as the EMI. Zero voltage, zero current switching technique can be used to reduce the switching loss and the noise. The high power density and high efficiency can be obtained. In this paper, the high-frequency inverter for short-range wireless power transfer applications was discussed. The feasible inverter circuit is analyzed in the circuit operating characteristics and the results are verified by the simulation.

• Journal of Power Electronics
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• v.9 no.1
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• pp.36-42
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• 2009

This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high voltage applications. In addition, the weight and size of passive components on the printed circuit board can be reduced substantially when operating at high frequency. With proper management of thermal and gate drive design, the GaN power converter is expected to generate higher power density with lower stress compared to its counterparts, Silicon (Si) devices. The main contribution of this work is to provide additional information to young researchers in exploring new approaches based on the device's capability and characteristics in applications using the GaN power converter design.

• ETRI Journal
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• v.43 no.6
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• pp.1103-1112
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• 2021

In this study, we present a venting clip for high-power applications that is intended to reduce stray inductance. To reduce the stray inductance of packages in high-power applications, the proposed venting clip features slots are inserted onto a conventional clip. A conventional clip and the proposed venting clip were designed and fabricated to compare the respective stray inductance. The inductance of the proposed venting clip was approximately 15.8% than that of the conventional clip at a frequency of 100 kHz. Through a comparison between the conventional and venting clips, it is confirmed that the proposed venting clip is superior for high-power applications in terms of decreasing inductance. With reduced inductance, the switching-loss for such applications is also expected to decrease. Moreover, the impedance of the venting clip decreased by approximately 15.5% compared with that of the conventional clip at a frequency of 100 kHz. The venting clip, which has reduced resistive component, is also expected to decrease conduction loss in highpower applications.

• Journal of Power Electronics
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• v.16 no.1
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• pp.277-286
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• 2016

This paper offers two Maximum Power Point Tracking (MPPT) systems for Photovoltaic (PV) applications. The first MPPT method is based on a fixed frequency Model Predictive Control (MPC). The second MPPT technique is based on the Predictive Hysteresis Control (PHC). An experimental demonstration shows that the proposed techniques are fast, accurate and robust in tracking the maximum power under different environmental conditions. A DC/DC converter with a high voltage gain is obligatory to track PV applications at the maximum power and to boost a low voltage to a higher voltage level. For this purpose, a high gain Switched Inductor Quadratic Boost Converter (SIQBC) for PV applications is presented in this paper. The proposed converter has a higher gain than the other transformerless topologies in the literature. It is shown that at a high gain the proposed SIQBC has moderate efficiency.

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.648-653
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• 1998

The conventional three-phase rectifier with bulky LC output filter has been widely used in the industry because of its distinctive advantages over the active power factor correction rectifier such as simple circuit, high reliability, and low cost. Over than 0.9 power factor can be achieved, which is acceptable in most of industry applications. This rectifier, however, is not easy to use for high power density applications since the LC filter is bulky and heavy. To solve this problem, a new simple rectifier is presented in this paper. By eliminating the bulky LC filter from the conventional diode rectifier without losing most of the advantages of the conventional rectifier, very high power density power conversion with high power factor can be achieved. Operation principle and design considerations are illustrated and verified by Pspice simulation and experimental results from a prototype of 3.3 kW rectifier followed by 100KHz zero voltage switching full bridge PWM converter

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.616-620
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• 2005

The technology of high-speed electrical machines is particularly relevant to applications involving electrical power generation and high-speed motors with high power density and high efficiency. Due to the development of improved materials for electrical machines, power electronic elements and design technology, the high-speed electrical machines are being rapidly introduced into industrial applications. The introduction of high-speed electrical machines has created a new market for electrical machines and will, as an application, contribute to the development of modern electrical machines. This paper deals with applications and market trends and KERI's activities in high-speed electrical machines.

• Journal of Electrical Engineering and Technology
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• v.2 no.1
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• pp.68-80
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• 2007

This paper covers switched reluctance generator (SRG) and its comparison with induction and synchronous machines for distributed generation. The SRG is simple in design, robust in construction, and fault tolerant in operation; it can also withstand very high temperatures. However, the performance and cost of the SRG power electronics driver are highly affected by the topology and design of the converter. IGBT and MOSFET based converters are not suitable for very high power applications. This paper presents thyristor-based resonant converters which are superior candidates for very high power applications. Operations of the converters are analyzed and their characteristics and dynamics are determined in terms of the system parameters. The resonant converters are capable of handling high currents and voltages; these converters are highly efficient and reliable as well. Therefore, they are suitable for high power applications in the range of 1MW or larger for distributed generation.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.12
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• pp.1602-1610
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• 2018

Induction heating can convert electrical energy to thermal energy with high conversion efficiency and quick heating. Currently, a current source rectifier/inverter-fed parallel resonant circuit is widely used as an induction heating power supply for forging applications. However, the conventional induction heating power supplies composed of phase-controlled rectifier and SCR inverter have low efficiency and low power factor at input side, and require additional starting circuitry. So this paper proposes new induction heating power supply topologies for forging applications which have high power factor, high efficiency, and large output power. It also suggests detailed design guideline.