• Journal of Korean Society on Water Environment
• /
• v.33 no.6
• /
• pp.689-695
• /
• 2017

This study was carried out to investigate the physicochemical and adsorptive characteristics of black carbon (BC) materials for cesium in case of severe nuclear accidents. The BC was prepared with a xylem of oak and pine trees incompletely combusted with different ramp rate and final temperature. Carbon (C), hydrogen (H) and oxygen (O) atomic ratios, BET, pore structure, and zeta potential were characterized for the produced BC. A low cesium concentration ($C_w{\approx}10^{-7}M$) was used for sorption batch experiments. The H/C and O/C ratios of BC decreased with the increase of final temperature, which indicates a carbonization of the wood materials regardless of ramp rate and tree species. However, SEM images showed different pore structures depending on tree species such as steric and plate-like for oak-BC and pine-BC, respectively. The greatest sorption distribution coefficients of $K_{d,Cs}{\approx}1,200{\sim}1,800L\;kg^{-1}$ were observed for the oak-BC produced at $400^{\circ}C$, while comparatively low $K_{d,Cs}$ < $100L\;kg^{-1}$ for pine-BC. In addition, the sorption capabilities of BC declined with the increase of combustion temperature up to $600^{\circ}C$, because high temperature destroyed surface functionalities with the rise of ash components in the BC. Therefore, the sorption processes of BC for radioactive cesium are predominantly controlled by final production temperature of BC as well as raw materials (e.g., tree species).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.199-199
• /
• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.195-195
• /
• 2012

Recently, graphene based solution-gated field-effect transistors (SGFETs) have been received a great attention in biochemical sensing applications. Graphene and reduced graphene oxide (RGO) possess various advantages such as high sensitivity, low detection limit, label-free electrical detection, and ease of fabrication due to their 2D nature and large sensing area compared to 1D nanomaterials- based nanobiosensors. Therefore, graphene or RGO -based SGFET is a good potential candidate for sensitive detection of protons (H+ ions) which can be applied as the transducer in various enzymatic or cell-based biosensing applications. However, reports on detection of H+ ions using graphene or RGO based SGFETs have been still limited. According to recent reports, clean graphene grown by CVD or exfoliation is electrochemically insensitive to changes of H+ concentration in solution because its surface does not have terminal functional groups that can sense the chemical potential change induced by varying surface charges of H+ on CVD graphene surface. In this work, we used RGO -SGFETs having oxygen-containing functional groups such as hydroxyl (OH) groups that effectively interact with H+ ions for expectation of increasing pH sensitivity. Additionally, we also investigate RGO based SGFETs for bio-sensing applications. Hydroloytic enzymes were introduced for sensing of biomolecular interaction on the surface of RGO -SGFET in which enzyme and substrate are acetylcholinesterase (AchE) and acetylcholine (Ach), respectively. The increase in H+ generated through enzymatic reaction of hydrolysis of Ach by AchE immobilized on RGO channel in SGFET could be monitored by the change in the drain-source current (Ids).

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.211-211
• /
• 2012

The electrical loss of the photo-generated carriers is dominated by the recombination at the metal- semiconductor interface. In order to enhance the performance of the solar cells, many studies have been performed on the surface treatment with passivation layer like SiN, SiO2, Al2O3, and a-Si:H. In this work, Al2O3 thin films were investigated to reduce recombination at surface. The Al2O3 thin films have two advantages, such as good passivation properties and back surface field (BSF) effect at rear surface. It is usually deposited by atomic layer deposition (ALD) technique. However, ALD process is a very expensive process and it has rather low deposition rate. In this study, the ICP-assisted reactive magnetron sputtering method was used to deposit Al2O3 thin films. For optimization of the properties of the Al2O3 thin film, various fabrication conditions were controlled, such as ICP RF power, substrate bias voltage and deposition temperature, and argon to oxygen ratio. Chemical states and atomic concentration ratio were analyzed by x-ray photoelectron spectroscopy (XPS). In order to investigate the electrical properties, Al/(Al2O3 or SiO2,/Al2O3)/Si (MIS) devices were fabricated and characterized using the C-V measurement technique (HP 4284A). The detailed characteristics of the Al2O3 passivation thin films manufactured by ICP-assisted reactive magnetron sputtering technique will be shown and discussed.

• Korean Journal of Materials Research
• /
• v.25 no.4
• /
• pp.202-208
• /
• 2015

Alumina dispersion strengthening copper(ADSC) alloy has great potential for use in many industrial applications such as contact supports, frictional break parts, electrode materials for lead wires, and spot welding with relatively high strength and good conductivity. In this study, we investigated the oxidation behavior of ADSC alloys. These alloys were fabricated in forms of plate and round type samples by surface oxidation reaction using Cu-0.8Al, Cu-0.4Al-0.4Ti, and Cu-0.6Al-0.4Ti(wt%) alloys. The alloys were oxidized at $980^{\circ}C$ for 1 h, 2 h, and 4 h in ambient atmosphere. The microstructure was observed with an optical microscope(OM) and a scanning electron microscope(SEM) equipped with energy-dispersive X-ray spectroscopy(EDS). Characterization of alumina was carried out using a 200 kV field-emission transmission electron microscope(TEM). As a result, various oxides including Ti were formed in the oxidation layer, in addition to ${\gamma}$-alumina. The thickness of the oxidation layer increased with Ti addition to the Cu-Al alloy and with the oxidation time. The corrected diffusion equation for the plate and round type samples showed different oxidation layer thickness under the same conditions. Diffusion length of the round type specimen had a value higher than that of its plate counterpart because the oxygen concentration per unit area of the round type specimen was higher than that of the plate type specimen at the same diffusion depth.

• Journal of Pharmaceutical Investigation
• /
• v.28 no.2
• /
• pp.121-126
• /
• 1998

The solubility and physicochemical stability of caroverine hydrochloride (CRV), an antispasmodic, in buffered aqueous solutions were studied using a reverse phase high performance liquid chromatography. The solubilty of the drug at pH 2.76-5.40 was similar at the range 31.9-36.2 mg/ml $(34^{circ}C)$, but, at the pH higher than 6.0, markedly decreased. The use of polyethylene glycol 400 as a cosolvent did not increase the solubility at any compositions examined. Moreover. increasing molar concentration of aqueous phosphate buffer from 0 to 0.5 M remarkably decreased the solubility. The degradation of CRY followed the apparent first-order kinetics. The degradation was accelerated with decreasing pH and increasing storage temperature. The half-lives for the degradation of CRY (1.0 mg/ml) at pH 1.28. 4.01 and 5.93 $(45^{\circ}C)$ were 2.8, 31.4 and 124 hr. respectively. The pHs of incubated solutions were to some extent lowered perhaps due to the formation of acidic degradation products. The addition of disodium edetate (0.01%) to the CRY solution (pH 4.95) retarded 2.5 times the degradation rate at $45^{\circ}C$, but the use of sodium bisulfite (0.1%) accelerated 2.9 times the rate. The activation energy for the CRY solution (20 mg/ml. pH 5.4) containing 0.01% EDTA was calculated to be 5.98 kcal/mole. When the solution was stored under nitrogen displacement in ampoule, there was no significant degradation even after 3 months at $40^{\circ}C$, indicating that protection from oxidation by air (oxygen) is essential for the complete stabilization of CRY solution.

• Journal of The Korean Society of Grassland and Forage Science
• /
• v.33 no.3
• /
• pp.153-158
• /
• 2013

Molybdenum (Mo) in rhizosphere influences sulfate assimilation as well as a number of other physiological aspects. In this study, the activity of key enzymes in sulfate assimilatory pathways, such as ATP sulfurylase (ATPs), adenosine 5'-phosphosulphate reductase (APR), as well as the responses of reactive oxygen species (ROS), were analyzed to elucidate the metabolic and physiological effects of external Mo supply to detached leaves of Trifolium repens L. Mo supply with a range from 1 mM to 40 mM depressed the activity of ATPs throughout the entire time course. In the leaves exposed to 1 mM Mo, a continuous decrease in the activity of ATPs was confirmed by Native-PAGE. The APR activity was also declined by Mo treatment. The accumulation of $H_2O_2$ and ${O_2}^{{\cdot}-}$ were not significant up to 10 mM Mo, whereas a remarked accumulation was detected under 40 mM Mo supply. The data suggest that an external supply of Mo has an inhibitory effect on sulfate assimilation, and induces oxidative stress only at an extremely high concentration.

• Korean Chemical Engineering Research
• /
• v.43 no.1
• /
• pp.47-52
• /
• 2005

The wide use of metal dusts have been found in industrial field and many dust explosion accidents occur by fire spread of dust layer. In this study, we developed a new experimental device to examine fire and explosion characteristics of the dust layer. Aspects of the burning zone over metals(Mg, Zr, Ta, Ti, etc) and PMMA(Polymethyl methacrylate) dust layers have been investigated experimentally to clarify behaviors (Spread rate and quenching distance) and effects of $N_2$ surrounding gas on the fire spread over metal dust layers. From the experimental result, it was found that the spread rate of metal dusts is larger than PMMA, the dependability of spread rate over the thickness of dust layer is small, and the minimum oxygen concentration of spread flame over Mg dust layer is 3.6-3.7 vol%. Since high correlation between the spread rate and the reciprocal of quenching distance was seen, relative risk prediction in those inflammable parameters can be predicted.

• Journal of the Korean Ceramic Society
• /
• v.34 no.8
• /
• pp.803-810
• /
• 1997

Ba0.5Sr0.5TiO3 thin films were deposited by RF magnetron sputliring method in order to clarify the anneal condition and doping effect on loakage current Nb and Al were selected as electron donor and acceptor dopants respectively, in the BST films because they have been known to have nearly same ionic radii as Ti and thought to substitute Ti sites to influence the charge carrier and the acceptor state adjacent to the gram boundary. BST thin films prepared in-situ at elevated temperature showed selatively high leakage current density and low breakdown voltage. In order to achieve smooth surface and to improve electrical properties, BST thin films were deposited at room temperature and annealed at elevated temperature. Post-annealed BST thin films showed smoother surface morphology and lower leakage current density than in-situ prepared thin films. The leakage current density of Al doped thin films was measured to be around 10-8A/cm2, which is much lower than those of undoped and Nb doped BST films. The result clearly demonstrates that higher Schottky barrier and lower mobile charge carrier concentration achieved by annealing in the oxygen atmosphere and by Al doping are desirable for reducing leakage current density in BST thin films.

• Journal of Wetlands Research
• /
• v.22 no.4
• /
• pp.321-327
• /
• 2020

Recently The amount of wastewater and linked wastewater is being increased every year due to industrial development, population growth, and improvement in living standards. Linked wastewater shows the feature-low flow rate and high concentration. Therefore, it has been shown that it has a great impact on the operation of the sewage treatment plant and costs a lot for treating linked wastewater. In this study, a scenario with low increase of water quality when the total amount of the inflow of linked wastewater was entered into individual reactors is obtained. According to the result of modeling, The effluent water quality get the least increment once the water was introduced into the influent and anoxic tank. We generated the various scenarios Based on these results. scenarios are varying according to inflow from linked waste water's distribution ration. As a result of modeling through various scenarios, it was found that the increment of TN and TP were at the least when the inflow of linked water was distributed with ratio between sewage (80%) and oxygen-free tank (20%).