• Title/Summary/Keyword: High-Gain Beam

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A novel ceramic GEM used for neutron detection

  • Zhou, Jianrong;Zhou, Xiaojuan;Zhou, Jianjin;Jiang, Xingfen;Yang, Jianqing;Zhu, Lin;Yang, Wenqin;Yang, Tao;Xu, Hong;Xia, Yuanguang;Yang, Gui-an;Xie, Yuguang;Huang, Chaoqiang;Hu, Bitao;Sun, Zhijia;Chen, Yuanbo
    • Nuclear Engineering and Technology
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    • v.52 no.6
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    • pp.1277-1281
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    • 2020
  • A novel ceramic Gas Electron Multiplier (GEM) has been developed to meet the demand of high counting rate for the neutron detection which is an alternative to 3He-based detector at China Spallation Neutron Source (CSNS). An experiment was performed to measure the neutron transmittance of ceramic-GEM and FR4-GEM at the small angle neutron scattering (SANS) instrument. The result showed the ceramic-GEM has higher transmittance and less self-scattering especially for cold neutrons. One single ceramic GEM could give a gain of 102-104 in the mixture gas of Ar and CO2 (90%:10%) and its energy resolution was about 27.7% by using 55Fe X ray of 5.9 keV. A prototype has been developed in order to investigate the performances of the ceramic GEM-based neutron detector. Several neutron beam tests, including detection efficiency, spatial resolution, two-dimensional imaging, and wavelength spectrum, were carried out at CSNS and China Mianyang Research Reactor (CMRR). The results show that the ceramic GEM-based neutron detector is a good candidate to measure the high intensity neutrons.

Evaluation of Flexible Complementary Inverters Based on Pentacene and IGZO Thin Film Transistors

  • Kim, D.I.;Hwang, B.U.;Jeon, H.S.;Bae, B.S.;Lee, H.J.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.154-154
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    • 2012
  • Flexible complementary inverters based on thin-film transistors (TFTs) are important because they have low power consumption and high voltage gain compared to single type circuits. We have manufactured flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The circuits were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. The characteristics of TFTs and inverters were evaluated at different bending radii. The applied strain led to change in voltage transfer characteristics of complementary inverters as well as source-drain saturation current, field effect mobility and threshold voltage of TFTs. The switching threshold voltage of fabricated inverters was decreased with increasing bending radius, which is related to change in parameters of TFTs. Throughout the bending experiments, relationship between circuit performance and TFT characteristics under mechanical deformation could be elucidated.

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Design of V-Band Waveguide Slot Sub-Array Antenna for Wireless Communication Back-haul (무선통신 백-홀용 V-밴드 도파관 슬롯 서브-배열 안테나의 설계)

  • Noh, Kwang-Hyun;Kang, Young-Jin
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.7
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    • pp.334-341
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    • 2016
  • In this paper, the study of a waveguide aperture-coupled feed-structured antenna has been conducted for the purpose of applying it to a wireless back-haul system sufficient for high-capacity gigabits-per-second data rates. For this study, a $32{\times}32$ waveguide slot sub-array antenna with a corporate-feed structure was designed and produced. Also, this antenna is used at 57 GHz to 66 GHz in the V-band. The construction of the antenna is a laminated form with radiating parts (outer groove and slot, cavity), a coupled aperture, and feeds in each. The antenna was designed with HFSS, which is based on 3D-FEM, produced with aluminum processed by a precision-controlled milling machine, and assembled after a silver-plating process. The measurement result from analysis of the characteristics of the antenna shows that return loss is less than -12 dB, VSWR < 2.0, and a wide bandwidth ranges up to 16%. An overall first side lobe level is less than -12.3 dB, and a 3 dB beam width is narrow at about $1.85^{\circ}$. Also, antenna gain is 38.5 dBi, offering high efficiency exceeding 90%.

Service Link Design for COMS Communication Channel (통신해양기상위성의 통신 서비스 링크 설계)

  • Oh Dae-ho;Kim Young-wan;Ko Nam-young
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.10 no.1
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    • pp.184-190
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    • 2006
  • Using COMS which provides multi-beam switching function, the optimal transmission channel environments which provides the high data rate communication are proposed in this paper. Also the link budget for communication transponder of COMSAT is designed. Bsaed on the channel modeling for group delay, non-linear and gain flatness characteristics, the system performances which provide high data rate (HDR) service were analyzed in Ka-band satellite channel. As the transmission data rate is increased, the degradation due to these channel characteristics is severely affect the system performance. To efficiently provide the various service via the same transmission system it is necessary to equlize the primary impairment factors. The optimum operating points of HDR satellite transmission system are implemeted and operated by considering the analyzed results on channel characteristics.

Design and Implementation of 60 GHz Wi-Fi for Multi-gigabit Wireless Communications (멀티-기가비트 무선 통신을 위한 60GHz Wi-Fi 설계 및 구현)

  • Yoon, Jung-Min;Jo, Ohyun
    • Journal of the Korea Convergence Society
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    • v.11 no.6
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    • pp.43-49
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    • 2020
  • In spite of the notable advancements of millimeter wave communication technologies, the 60 GHz Wi-Fi is still not widespread yet, mainly due to the high limitation of coverage. Conventionally, it has been hardly possible to support a high data rate with fast beam adaptation while keeping atmospheric beamforming coverage. To solve these challenges in the 60 GHz communication system, holistic system designs are considered. we implemented an enhanced design LDPC decoder enabling 6.72 Gbps coded-throughput with minimal implementation loss, and our proposed phase-tracking algorithm guarantees 3.2 dB performance gain at 1 % PER in the case of 16 QAM modulation and LDPC code-rate 3/4.

High power tunable Ti:sapphire laser with sub-40fs pulsewidth (40펨토초 미만 펄스폭의 고출력 파장가변 티타늄사파이어 레이저)

  • 임용식;노영철;이기주;김대식;장준성
    • Korean Journal of Optics and Photonics
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    • v.10 no.5
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    • pp.430-438
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    • 1999
  • We have utilized soft-aperturing by gain media to develop a high-power tunable Ti:Sapphire laser with sub-40-fs and broad tuning range. The tunable spectral range was only limited by the bandwidth of mirrors. We made use of knife-edge slits near an intra-cavity prism controlled by micro-stepping-motors to tune the center wavelength continuously. The tunability of the center wavelength was ranged from 770 nm to 870 nm, and the measured pulsewidth was sub-40 fs throughout the above spectral range. The shortest pulsewidth was about 17 fs at the center wavelength of 820 nm and the spectral bandwidth was 72 nm. At 5 W pumping power of the Ar-ion laser we obtained average output power of 440 mW~580 mW. For the cw and Kerr-lens mode-lodking conditions, we have evaluated the value of an amplitude modulation to be ${\gamma}=2.5{\times}10^{-8}/W$ from the calculated waists of a Gaussian beam on the Ti:sapphire crystal surface. Using this result we demonstrate that the generation of sub-40-fs Kerr-lens mode-locked pulse can be described by the Ginzberg-Landau model which is a weak pulse shaping model.

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Hybrid complementary circuits based on organic/inorganic flexible thin film transistors with PVP/Al2O3 gate dielectrics

  • Kim, D.I.;Seol, Y.G.;Lee, N.E.;Woo, C.H.;Ahn, C.H.;Ch, H.K.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.479-479
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    • 2011
  • Flexible inverters based on complementary thin-film transistor (CTFTs) are important because they have low power consumption and other advantages over single type TFT inverters. In addition, integrated CTFTs in flexible electronic circuits on low-cost, large area and mechanically flexible substrates have potentials in various applications such as radio-frequency identification tags (RFIDs), sensors, and backplanes for flexible displays. In this work, we introduce flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The CTFTs were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. Basic electrical characteristics of individual transistors and the whole CTFTs were measured by a semiconductor parameter analyzer (HP4145B, Agilent Technologies) at room temperature in the dark. Performance of those devices then was measured under static and dynamic mechanical deformation. Effects of cyclic bending were also examined. The voltage transfer characteristics (Vout- Vin) and voltage gain (-dVout/dVin) of flexible inverter circuit were analyzed and the effects of mechanical bending will be discussed in detail.

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A Study of the Fiber Fuse in Single-mode 2-kW-class High-power Fiber Amplifiers (단일 모드 2 kW급 고출력 광섬유 증폭기 내의 광섬유 용융 현상에 관한 연구)

  • Lee, Junsu;Lee, Kwang Hyun;Jeong, Hwanseong;Kim, Dong Jun;Lee, Jung Hwan;Jo, Minsik
    • Korean Journal of Optics and Photonics
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    • v.31 no.1
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    • pp.7-12
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    • 2020
  • In this paper, we experimentally investigate the fiber fuse in single-mode 2-kW-class high-power fiber amplifiers, depending on the cooling method at the splicing point. We measured the temperature of the splicing point between the pump-signal combiner and gain fiber as a function of laser output power. The temperature of the splicing point increased from 20 to 32℃ with a slope of 0.01℃/W, up to 1.2 kW of laser output power. At higher powers the temperature of the splicing point increased dramatically, with a slope of 0.08℃/W. After that, the fiber amplifier was destroyed during operation at 1.96 kW of output power by fiber fuse. The bullet shape, a common feature of fiber fuse, was observed in the damaged passive fiber core of the pump-signal combiner. Later, we adopted an improved water-cooled cold plate to increase the cooling efficiency at the splicing point, and investigated the laser output power. The temperature at the splicing point was 35.8℃ with a temperature-rise slope of 0.007℃/W at the maximum output power of 2.05 kW. The beam quality M2 was measured to be less than 1.3, and the output beam's profile was a stable Gaussian shape. Finally, neither fiber fuse nor mode instability was observed in the fiber amplifier at the maximum output power of 2.05 kW.

PERFORMANCE OF THE SRAO 6-METER RADIO TELESCOPE

  • KOO BON-CHUL;PARK YONG-SUN;HONG SEUNG SOO;YUN HONG-SIK;LEE SANG-GAK;BYUN DO-YOUNG;LEE JUNG-WON;CHOI HAN-KyU;LEE SANG-SUNG;YOON YOUNG-ZOO;KIM KEE-TAE;KANG HYUN WOO;LEE JUNG-EuN
    • Journal of The Korean Astronomical Society
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    • v.36 no.1
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    • pp.43-48
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    • 2003
  • We introduce and describe performance of the 6-meter telescope of Seoul Radio Astronomy Observatory (SRAO). All the softwares and instruments except the antenna structure and its driving system are developed for ourselves. The SIS mixer type receiver resulted in the receiver noise temperature less than 50 K (DSB) over the whole 3-mm radio window. An autocorrelation spectrometer, developed first in Korea, provides maximum 50 MHz band width over 1024 channels. Antenna surface is measured and adjusted using template method and radio holography which resulted in a superb surface accuracy bet-ter than 30${\mu}m$. Accordingly, the aperture and beam efficiences amount to $70\%$ and $75\%$, respectively, largely independent of frequency in the 85 - 115 GHz range. It is also found that telescope pointing errors are less than 10" in both azimuth and elevation and that antenna gain is almost constant against elevation greater than $20^{\circ}$, without adjusting sub-reflector position. The SRAO 6-meter telescope is now fully operational and all these characteristics verify that observations are carried out with high precision and fidelity.

A Study for The X-ray Image Acquisition Experiment Using by Gas Electron Multipliers (기체전자증폭기를 이용한 X-선 영상획득실험에 관한 연구)

  • 강상묵;한상효;조효성;남상희
    • Journal of Biomedical Engineering Research
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    • v.24 no.2
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    • pp.83-89
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    • 2003
  • The gas electron multiplier placed in the drift volume of conventional gas detectors, is a conceptually simple device for producing a large gas gain by concentrating the drift electric field over a very short distance to the point that electron avalanching occurs(〉 10$^4$ V/cm), greatly increasing the number of drifting electrons. This device consists of a thin insulating foil of several tens of urn in thickness. covered on each side with a thin metal layer(Cu), with tiny holes, usually 100 ${\mu}{\textrm}{m}$ or less in diameter. and with a spacing of 100-200 ${\mu}{\textrm}{m}$ through the entire foil. perforated by using chemical etching or high-powered laser beam technique In this study, we have investigated its operating properties with various experimental conditions, and demonstrated the possibility of using this device as a digital X-ray imaging sensor, by acquiring X-ray images based on the scintillation properties of the gas electron multiplier with standard CCD camera.