• 제목/요약/키워드: High-Current

검색결과 18,636건 처리시간 0.043초

Effect of Deposition Parameters on the Morphology and Electrochemical Behavior of Lead Dioxide

  • Hossain, Md Delowar;Mustafa, Chand Mohammad;Islam, Md Mayeedul
    • Journal of Electrochemical Science and Technology
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    • 제8권3호
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    • pp.197-205
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    • 2017
  • Lead dioxide thin films were electrodeposited on nickel substrate from acidic lead nitrate solution. Current efficiency and thickness measurements, cyclic voltammetry, AFM, SEM, and X-ray diffraction experiments were conducted on $PbO_2$ surface to elucidate the effect of lead nitrate concentration, current density, temperature on the morphology, chemical behavior, and crystal structure. Experimental results showed that deposition efficiency was affected by the current density and solution concentration. The film thickness was independent of current density when deposition from high $Pb(NO_3)_2$ concentration, while it decreased for low concentration and high current density deposition. On the other hand, deposition temperature had negative effect on current efficiency more for lower current density deposition. Cyclic voltammetric study revealed that comparatively more ${\beta}-PbO_2$ produced compact deposits when deposition was carried out from high $Pb(NO_3)_2$ concentration. Such compact films gave lower charge discharge current density during cycling. SEM and AFM studies showed that deposition of regular-size sharp-edge grains occurred for all deposition conditions. The grain size for high temperature and low concentration $Pb(NO_3)_2$ deposition was bigger than from low temperature and high concentration deposition conditions. While cycling converted all grains into loosely adhered flappy deposit with numerous pores. X-ray diffraction measurement indicates that high concentration, high temperature, and high current density favored ${\beta}-PbO_2$ deposition while ${\alpha}-PbO_2$ converted to ${\beta}-PbO_2$ together with some unconverted $PbSO_4$ during cycling in $H_2SO_4$.

조가선 전류 검측 시스템의 활용기술 연구 - 고속선 경부2단계 시험결과를 중심으로 - (Utilizing Technology in Measurement System for Catenary Current: - Focusing on Testing Results for Kyoungbu High-speed Line in Korea -)

  • 박영;정호성;이기원
    • 전기학회논문지
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    • 제62권10호
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    • pp.1465-1469
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    • 2013
  • The resent developed high speed train called HEMU-430X (Highspeed Electric Multiple Unit - 430km/h eXperiment) recorded a 421.4 km/h in Kyoungbu high speed line in Korea. A verity of measurement systems are used to check the performance between pantograph and catenary system. An innovative measurement system is adopted to check the current of catenary wire in the track side during HEMU-430X test running. This paper presents the measurement results of catenary current in kyoungbu high-speed line and describe its utilizing technology in the experimental results of catenary current. In order to analyze field testing results, the current ratio between contact and catenary current have been analyzed by means of Carson-Pollaczek equation. And the current wave forms between catenary and contact wire are presented based on the simulation results.

고장 유형별 고속 인터럽터의 동작 특성 (The Operational Characteristics of High-speed Interrupter by Fault Types)

  • 정인성;최효상;정병익
    • 전기학회논문지
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    • 제62권2호
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    • pp.278-283
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    • 2013
  • With the increasing power demands, size of the fault current in electrical grids is steadily increasing, and it exceeds the breaking capacity of circuit breakers. To effectively cope with these problems, a high-speed interrupter was suggested. The high-speed interrupter provides fault current with a bypass to a fault current limiter in case of accidents and consequently, fault current can be restricted. In this study, behavioral characteristics of high-speed interrupter were analyzed by accident types occurred in a distribution system. When accidents occurred, a and b contact of the high-speed interrupter were turned-off and then, turned-on. Accordingly, fault current flowed to the circuit connected to a current limiting element, and the fault current limiter restricted fault current to within a half-cycle. Nevertheless, the behavior of the high-speed interrupter was slowed down by a switching surge. As a result, fault current was confirmed to be restricted not to within the anticipated half-cycle, but to after a half-cycle. Moreover, the behavioral characteristics of the high-speed interrupter changed not only by accident types, but by behaviors of R, S, and T phases. This was due to the errors in stroke lengths of the high-speed interrupters, which resulted in a slight time discrepancy among three interrupters. In addition, the switching behaviors of the b and a contact were confirmed not to have coincided due to the switching surge; b contact behaved first and a contact followed. because of this, accuracy of stroke length and switching surges through the solenoid suction increases may be necessary to resolve.

An Efficient and High-gain Inverter Based on The 3S Inverter Employs Model Predictive Control for PV Applications

  • Abdel-Rahim, Omar;Funato, Hirohito;Junnosuke, Haruna
    • Journal of Electrical Engineering and Technology
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    • 제12권4호
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    • pp.1484-1494
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    • 2017
  • We present a two-stage inverter with high step-up conversion ratio engaging modified finite-set Model Predictive Control (MPC) for utility-integrated photovoltaic (PV) applications. The anticipated arrangement is fit for low power PV uses, the calculated efficiency at 150 W input power and 19 times boosting ratio was around 94%. The suggested high-gain dc-dc converter based on Cockcroft-Walton multiplier constitutes the first-stage of the offered structure, due to its high step-up ability. It can boost the input voltage up to 20 times. The 3S current-source inverter constitutes the second-stage. The 3S current-source inverter hires three semiconductor switches, in which one is functioning at high-frequency and the others are operating at fundamental-frequency. The high-switching pulses are varied in the procedure of unidirectional sine-wave to engender a current coordinated with the utility-voltage. The unidirectional current is shaped into alternating current by the synchronized push-pull configuration. The MPC process are intended to control the scheme and achieve the subsequent tasks, take out the Maximum Power (MP) from the PV, step-up the PV voltage, and introduces low current with low Total Harmonic Distortion (THD) and with unity power factor with the grid voltage.

출력전류 제어 기능이 향상된 고휘도 LED 구동 IC 설계 (Design of the High Brightness LED Driver IC with Enhanced the Output Current Control Function)

  • 송기남;한석붕
    • 한국전기전자재료학회논문지
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    • 제23권8호
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    • pp.593-600
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    • 2010
  • In this paper, High brightness LED (light-emitting diodes) driver IC (integrated circuit) using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET (metal oxide semiconductor field effect transistor) from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. To confirm the functioning and characteristics of our proposed LED driver IC, we designed a buck converter. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses 1.0 ${\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre (Cadence) simulation.

출력전류 제어 기능이 향상된 고휘도 LED 구동 IC 설계 (Design of the High Brightness LED Driver IC with Enhanced the Output Current Control Function)

  • 한석붕;송기남
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.9-9
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    • 2010
  • In this paper, High Brightness LED driver IC using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses $1{\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre(Cadence) simulation.

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The Analysis of Current Limiting Performance in a High-$T_c$ Superconductor using Flux-Lock Concepts

  • 임성훈;최효상;김영순;이성룡;한병성
    • Progress in Superconductivity
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    • 제3권2호
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    • pp.229-234
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    • 2002
  • In this paper, we analyzed the fault current performance in a $high-T_{c}$ superconductor(HTS) which was installed on flux-lock reactor with an external magnetic field coil covering the HTS. In this HTS fault current limiter using flux-lock concepts, the initial limiting current level can be controlled by adjusting the inductance of the coils. Furthermore, the current limiting characteristics of $high-T_{c}$ superconducting FCL can be improved by applying the external magnetic field into the $high-T_{c}$ superconductor. This paper discusses current limiting performance according to the inductance of the coil 1 in two cases with ac magnetic field coil or not and suggests the methods to improve the current limiting factor $P_{limit}$, which is defined as the ratio of the limited current $I_{FCL}$ at the current limiting phase to the prospective short -circuit current $I_{PSC}$.TEX> PSC/.

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V/F 제어 고속 유도전동기의 전류 진동 억제 방법 (Suppression method for current oscillation of V/F controlled high speed induction motor)

  • 이진우
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2017년도 전력전자학술대회
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    • pp.150-151
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    • 2017
  • This paper deals with the suppression of subharmonic current oscillation of V/F controlled high speed induction motor drive in turbo blower applications. High speed induction motor has a relatively low stator impedance for high speed operation and therefore the dc link voltage ripple may result in subharmonic current oscillation at the steady state in high speed operation. This paper shows that the subharmonic oscillation is caused by the dc link voltage ripple and also proposes the suppression method, which generates the compensation voltage through the proportional current controller to reduce the subharmonic current oscillation. The simulation and experimental results show that the proposed suppression method reduces the subharmonic current oscillation to the acceptable low level in turbo blower applications.

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Implement High Speed Bidirectional pulse power supply(BPPS) for plating

  • Kim, Tae-Eon;Park, Jong-Oh;Cho, Yong-Seong;Lee, Ihn-Yong;Kim, Young-Han;Lim, Young-Do
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2001년도 ICCAS
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    • pp.37.1-37
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    • 2001
  • Electric plating is used in various industry field. Specially, pulse plating is able to deposit material at high current density compared to conventional DC plating. For example, pulse plating can get more fine grain, can improve adhesion and metal distribution and current efficiency, can reduce internal stress and crack. Therefore, we developed bidirection pulse power supply(BPPS) which has high speed pulse current and high current density and improve deposition quality and increase plating speed in this paper. BPPS(Bidirection pulse power supply) needs high speed rising time, falling time and output current accuracy. BPPS consists of rectifier part, chopper part, invertor part, and control part. Rectifier part changes outprt current direction.

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부스터 변환기를 위한 MOSFET 스위치 전류 감지 회로 (Current Sensing Circuit of MOSFET Switch for Boost Converter)

  • 민준식;노보미;김의진;이찬수;김영석
    • 한국전기전자재료학회논문지
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    • 제23권9호
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    • pp.667-670
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    • 2010
  • In this paper, a high voltage current sensing circuit for boost converter is designed and verified by Cadence SPECTRE simulations. The current mirror pair, power and sensing metal-oxide semiconductor field effect transistors (MOSFETs) with size ratio of K, is used in our on-chip current sensing circuit. Very low drain voltages of the current mirror pair should be matched to give accurate current sensing, so a folded-cascode opamp with a PMOS input pair is used in our design. A high voltage high side lateral-diffused MOS transistor (LDMOST) switch is used between the current sensing circuit and power MOSFET to protect the current sensing circuit from the high output voltage. Simulation results using 0.35 ${\mu}m$ BCD process show that current sensing is accurate and the pulse frequency modulation (PFM) boost converter using the proposed current sensing circuit satisfies with the specifications.