• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1412-1414
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• 2006

We study on the Electro Optical Properties of the EEFL (External Electrode Fluorescent Lamp) Backlight system is based on the lamp type characteristics and diameter of the lamp tube under the equal manufacturing of the lamps. In this contribution, through the analysis of the different lamp type and diameter of the lamp tube gain the effective luminance and reduce the lamp voltage from aspect in the electro optical properties with EEFL and LCD backlight system.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38A no.1
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• pp.88-95
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• 2013

We propose a novel driver circuit design using $0.18{\mu}m$ CMOS process technology that drives a 1550 nm high-speed VCSEL used in optical transceiver. We report a distinct improvement in bandwidth, voltage gain and eye diagram at 3.1Gb/s data rate in comparison with existing topology. In this paper, the design and layout of a 3.1Gb/s VCSEL driver for optical transceiver having arrayed multi-channel of integrating module is confirmed.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.237-240
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• 2002

In this paper, we designed and implemented the dual band antenna for IMT-2000 and 5.7㎓ WLAN(Wireless Local Area Network). The antenna was designed by using 3D simulations program, HFSS(High Frequency Structure Simulator). The electrical characteristics were measured by using HP 8720C network analyzer and measured maximum S$\sub$11/ was -25㏈, and maximum VSWR(Voltage Standing Wavc Ratio) was 1.26 for all frequency bands of interests in IMT-2000 and 5.7㎓ WLAN. Simulation results for antenna gain at 2㎓ and 5.7㎓ were 1.31㏈i and 4.1㏈i with omni directional radiation pattern. Implemented antenna is compact sized and can be produced in low cost enough for commercialization.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2001.05a
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• pp.917-923
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• 2001

This paper presents the fabrication and testing results of a dual stage microactuator system for fine positioning of magnetic heads in hard disk drives. An electrostatic rotary microactuator was newly designed and fabricated. The microactuator was integrated into the head gimbal assembly of a disk drive system and its dynamic characteristics were investigated. Experimental results show that natural frequency and voltage gain of the microactuator are 4.3 KHz and 25 nm/V and the dual stage microactuator system achieves the tracking accuracy of 30 nm.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.189-192
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• 2001

We have studied fabrication processes that form asymmetric $\Gamma$-gate with a 0.1${\mu}{\textrm}{m}$ gate length in MMIC's(Monolithic Microwave Integrated Circuits). Asymmetric $\Gamma$-gate was fabricated using mixture of PMMA and MCB. Thus pseudomorphic high electron mobility transistor (PHEMT's) with 0.1${\mu}{\textrm}{m}$ gate length was fabricated via several steps such as mesa isolation, metalization, recess, passivation. PHEMT's has the -1.75 V of pinch-off voltage (Vp), 63 mA of drain saturation current(Idss and 363.6 mS/mm of maximum transconductance (Gm) in DC characteristics and current gain cut-off frequency of 106 GHz and maximum frequency of oscillation of 160 GHz in RF characteristics.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.295-298
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• 1999

AlGaAs/InGaAs power P-HEMTS (Pseudo-morphic High Electron Mobility Transistors) with 1.0-${\mu}{\textrm}{m}$ gate length for PCS applications have been fabricated. We adopted single heterojunction P-HEMT structure with two Si-delta doped layer to obtain higher current density. It exhibits a maximum current density of 512㎃/mm, an extrinsic transconductance of 259mS/mm, and a gate to drain breakdown voltage of 12.0V, respectively. The device exhibits a power density of 657㎽/mm, a maximum power added efficiency of 42.1%, a linear power gain of 9.85㏈ respectively at a drain bias of 6.0V, gate bias of 0.6V and an operation frequency of 1.765㎓.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.389-393
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• 2003

This paper describes the design of enhanced TSSI RF Power Detector which has wide dynamic range using switch and Log amp. This Power Detector consists of low and high gain loops, and they adaptively switched by output DC voltage which is proportioned to input power level. Because Power Detector needs to separate the channel, so architecture is heterodyne system having 70MHz intermediate frequency. This proposed RF Power Detector is settle to the satisfaction of Closed loop power control system for W-CDMA optic repeater, and the obtained dynamic range cover the higher than 50dB.

• The Transactions of the Korean Institute of Power Electronics
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• v.5 no.2
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• pp.163-169
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• 2000

From the viewpoint of the cost effective design of power conversion systems, it is very important to fully u utilize the CillTent capacity of power devices over all circumstances. Therefore this paper deals with the l practical design of digital CillTent controller to meet the requirements of fast and overshoot free control r response over the varying control voltage bOlmds, the accompanied computational delay, and the system U W1certainties. The proposed controller consists of high gain PI control schemes using both the conditional i integrator and the modified delay compensator. The simulation and experimental results show the validity of t the proposed controller.

• 한국전자현미경학회:학술대회논문집
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• 2007.05a
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• pp.84-89
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• 2007

카메라의 정량 평가 결과로부터 신규 설치된 HVEM용 고전압 CCD 카메라 (SPUS1000 HV-IF)는 기존의 HV-MSC 카메라에 비해 read-out noise level과 shot noise 발생거동, average gain, dynamic range, uniformity, DQE 등이 향상된 결과를 보여 주었고 MTF는 전과 유사한 결과를 나타내었다. 그러나 linearity가 HV-MSC 카메라에 비해 그 범위가 좁으며 낮은 전자 조사 조건하에서는 전반적인 카메라 성능이 오히려 HV-MSC 카메라의 경우보다 낮은 결과를 나타내었다. 따라서 본 신규 카메라는 낮은 전자 조사 조건이 필요한 실험에서는 기록 성능의 개선을 나타내지 않지만 고속 영상 기록 기능을 활용한 재료의 역동적 분석과 함께 원자분해 영상 작업과 EELS 분석에 있어선 이전 보다 기록 성능의 뚜렷한 개선을 나타낼 것으로 기대할 수 있다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.23 no.4
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• pp.1121-1133
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• 1998

In this paper, a new method is proposed for a simple andaccurate design of larage-sigal power amplifier using the output current- and volage- waveform analysis. An existing high-efficiency theory, Harmonic Loading, is modified to apply to a real device, and the notion of "actual bias point at large-signal input" is proposed. Based on the proposed theory, 2GHz band poweramplifier is implemented using HEMT device, and the implemented amplifier shows 14dBm output power, 46% drain efficienty, 38% power-added efficiency and 7.8dB gain at 2V bias voltage.