• Journal of the Korean Society of Combustion
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• v.10 no.4
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• pp.24-32
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• 2005

Various types of plasma source applied in $CH_4$ decomposition process are compared. DBD by pulse and AC power, spark by pulse and AC power, rotating arc and hollow cathode plasma are chosen to be compared. The results show that $CH_4$ conversion per given unit power is relatively high in hollow cathode plasma and rotating arc that induces rather high temperature condition and that is why both thermal dehydration and plasma induced decomposition contribute for the overall process. In case of DBD wherein high temperature electron and low temperature gas molecule coexist, the process shows low conversion rate, for in rather low temperature condition the contribution of thermal dehydration is lowered. Selectivity of $C_2H_6$ and $C_2H_2$ is shown to be a good parameter of the relative contribution of plasma chemistry in the overall process. From the results we concluded that required condition of plasma source for a cost effective and high yield $CH_4$ decomposition is to have characteristics of both thermal plasma and non thermal plasma in which temperature is high above a certain threshold state for thermal dehydration and electron induced collision is maximized in the same breath.

• Tribology and Lubricants
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• v.12 no.3
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• pp.33-38
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• 1996

High temperature wear behaviors of plasma-sprayed ZrO$_{2}$-$Y_{2}O_{3}$ composite coatings were investigated for high temperature wear resistance applications. The composite powders containing 20, 50, 80 vol% of alumina for plasma spray were made by spray drying method. Wear tests with composite coated specimens were performed at temperature ranges from room temperature to 800$^{\circ}$C. Wear tests were also carried out with heat treated specimens at room temperature. The microstructural change of coatings and the worn surface were examined by SEM and XRD. Sharp increase of wear loss at high temperature wear test was observed in specimens containing 50 and 80 vol% alumina. Similar trend was observed in the heat treated coatings. The measured residual stress was increased with increased alumina contents and heat treating temperatures. Residual stress induced during heat treatment appeared to be responsible to the observed harmful effect of alumina additions on the high temperature wear.

• Current Applied Physics
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• v.18 no.11
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• pp.1436-1440
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• 2018

SiN and SiCN film production using plasma-enhanced atomic layer deposition (PE-ALD) is investigated in this study. A developed high-power and high-density multiple inductively coupled plasma (multi-ICP) source is used for a low temperature PE-ALD process. High plasma density and good uniformity are obtained by high power $N_2$ plasma discharge. Silicon nitride films are deposited on a 300-mm wafer using the PE-ALD method at low temperature. To analyze the quality of the SiN and SiCN films, the wet etch rate, refractive index, and growth rate of the thin films are measured. Experiments are performed by changing the applied power and the process temperature ($300-500^{\circ}C$).

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• Asian-Australasian Journal of Animal Sciences
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• v.13 no.9
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• pp.1210-1218
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• 2000

Four experiments were conducted to evaluate the effect of temperature and humidity on biochemical indices of Arbor Acres broilers at different weeks of age. The alkaline phosphatase (AKP), acid phosphatase (ACP), lactic dehydrogenase (LD), creatine kinase (CK), plasma glucose (Glu), calcium (Ca), potassium (K), chloride (Cl), urea nitrogen (UN), uric acid (UA), plasma thyroxin (T4), triiodothyronine (T3) and insulin levels were determined in all the four experiments. In experiment 1, the plasma Glu, LD and CK levels were increased by heat exposure ($35{^{\circ}C}$ and 35, 60, or 85% RH, 2 h) and this effect was aggravated by longer exposure (24 h). No significant changes (p>0.05) were found in Ca concentration, activity of AKP and ACP. In experiment 2, temperature (10, 20, 30, $33{^{\circ}C}$) had significant effect on the levels of K, Cl, UN, UA levels and the activity of LD (p<0.01), but had no significant influence on the activity of CK (p>0.05). The UN, UK and LD levels were elevated by low temperature $(10{^{\circ}C})$ (p<0.01), Cl content was increased by high temperature ($(33{^{\circ}C})$ (p<0.01), and K level was decreased by high ($(33{^{\circ}C})$ or low $(10{^{\circ}C})$ temperature and increased by medium temperature $(30{^{\circ}C})$ (p<0.01). The humidity (35, 85% RH) only had significant effect on Cl concentration which was decreased by high humidity (p<0.01). In experiment 3, the result showed that only the LD and CK activity were significantly increased (p<0.01) by high temperature (7, 24, 28, $32{^{\circ}C}$) or high humidity (35, 85% RH). Temperature and humidity had no significant effect on K, Cl, UA, UN and Glu levels (p>0.05). In experiment 4 (24, 27, 30, $33{^{\circ}C}$; 30, 45, 60, 75, 90% RH), plasma T3 level was declined by high temperature $(33{^{\circ}C})$, and this phenomena disappeared in birds under high temperature and high humidity environment. T4 concentration in plasma was not affected by temperature (p>0.05), but was increased by high or low humidity (p<0.01). Neither temperature nor humidity had significant effect on plasma insulin concentration (p>0.05). The results of the four experiments suggested that broilers at different growth periods might have different thermal requirements and would response differently to heat exposure. The plasma biochemical indices themselves had big variation; the reaction of the indices to thermal exposure treatment differed with the age of broilers. The big variation of biochemical indices themselves might cover the response of indices to temperature and humidity treatments.

• Particle and aerosol research
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• v.5 no.3
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• pp.95-109
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• 2009

A low temperature plasma process has been widely used for semiconductor fabrication and can also be applied for the preparation of solar cell, MEMS or NEMS, but they are notorious in the point of particle contamination. The nano-sized particles can be generated in the low temperature plasma process and they can induce several serious defects on the performance and quality of microelectronic devices and also on the cost of final products. For the preparation of high quality thin films of high efficiency by the low temperature plasma process, it is desirable to increase the deposition rate of thin films with reducing the particle contamination in the plasmas. In this paper, we introduced the studies on the generation and growth of nanoparticles in the low temperature plasmas and tried to introduce the recent interesting studies on nanoparticle generation in the plasma reactors.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.634-639
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• 1996

In oder to improve the wear resistance as well as oxidation resistance at high temperature a AISI H13 steel was treated by a duplex process of calorizing followed by plasma nitriding. The surface properties of the duplex-treated AISI H13 steel was characterized and compared with those treated by single surface process of calorizing and plasma nitriding, in terms of microstruture, microhardness, wear resistance at $500^{\circ}C$, and the oxidation behaviours at $700^{\circ}C$, Duplex process on H13 steel had created duplex layer of approximately $190\mu\textrm{m}$ on the surface, and surface microhardness was measured to be above 1450Hv(0.1Kgf). There was considerable improvement of the high temperature wear resistance at $500^{\circ}C$ in the duplex-treated steel when both wear volume and weight change due to oxidation were considered. In addition the duplex-treated steel showed an improved high temperature oxidation resistance than the plasma nitrided steel at $700^{\circ}C$.

• Nuclear Engineering and Technology
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• v.44 no.1
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• pp.21-32
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• 2012

Fluorinated compounds mainly used in the semiconductor industry are potent greenhouse gases. Recently, thermal plasma gas scrubbers have been gradually replacing conventional burn-wet type gas scrubbers which are based on the combustion of fossil fuels because high conversion efficiency and control of byproduct generation are achievable in chemically reactive high temperature thermal plasma. Chemical equilibrium composition at high temperature and numerical analysis on a complex thermal flow in the thermal plasma decomposition system are used to predict the process of thermal decomposition of fluorinated gas. In order to increase economic feasibility of the thermal plasma decomposition process, increase of thermal efficiency of the plasma torch and enhancement of gas mixing between the thermal plasma jet and waste gas are discussed. In addition, noble thermal plasma systems to be applied in the thermal plasma gas treatment are introduced in the present paper.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.201-207
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• 2017

An electron-excited temperature ($T_{ex}$) is not determined by the Boltzmann plots only with the spectral data of $4p{\rightarrow}4s$ in an Ar-plasma jet operated with a low frequency of several tens of kHz and the low voltage of a few kV, while $T_{ex}$ can be obtained at least with the presence of a high energy-level transition ($5p{\rightarrow}4s$) in the high-voltage operation of 8 kV. The optical intensities of most spectra that are measured according to the voltage and the measuring position of the plasma column increase or decay exponentially at the same rate as that of the intensity variation; therefore, the excitation temperature is estimated by comparing the relative optical-intensity to that of a high voltage. In the low-voltage range of an Ar-jet operation, the electron-excitation temperature is estimated as being from 0.61 eV to 0.67 eV, and the corresponding radical density of the Ar-4p state is in the order of $10^{10}{\sim}10^{11}cm^{-3}$. The variation of the excitation temperature is almost linear in relation to the operation voltage and the position of the plasma plume, meaning that the variation rates of the electron-excitation temperature are 0.03 eV/kV for the voltage and 0.075 eV/cm along the plasma plume.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2092-2094
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• 2000

As a next generation lithography (NGL) technology for VLSI semiconductor fabrication, electron beam, ion beam, X-ray and extreme ultraviolet(EUV) are considered as possible candidates. Among these methods, EUV lithography(EUVL) is thought to be the most probable because it is easily realized by improving current optical lithography technology. In order to set EUV radiation which can be applied to EUVL, it is essential to generate very high density and high temperature plasma stably. The method using a pulse power laser and a high voltage pulse discharge is commonly used to accomplish such a high density and high temperature plasma. In this paper we review the recent trends of the EUV generation technique by high density and high temperature plasma.