• Journal of the Semiconductor & Display Technology
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• v.15 no.3
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• pp.72-77
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• 2016

As the semiconductor production technology has gradually developed and intra-market competition has grown fiercer, the caliber of Si Wafer for semiconductor production has increased as well. And semiconductors have become integrated with higher density. Presently the Si Wafer caliber has reached up to 450 mm and relevant production technology has been advanced together. Electrostatic chuck is an important device utilized not only for the Wafer transport and fixation but also for the heat treatment process based on plasma. To effectively control the high calories generated by plasma, it employs a refrigerant-based cooling method. Amid the enlarging Si Wafers and semiconductor device integration, effective temperature control is essential. Therefore, uniformed temperature distribution in the electrostatic chuck is a key factor determining its performance. In this study, the form of refrigerant flow channel will be investigated for uniformed temperature distribution in electrostatic chuck.

• The Korean Journal of Ceramics
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• v.5 no.1
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• pp.87-90
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• 1999

It was suggested that tape casting method can be used to fabricate high-temperature electrostatic chucks(HTESC) based on a metal substrate coated with a glass-ceramic insulating layer. The adhesion of the coating was excellent such that it was able to withstand temperature cycling to over $300^{\circ}C$ without spalling. The electrostatic clamping pressure reached a very high value of about 9 torr at 600V and generally followed the theoretical voltage-squared curve. Based on these results, we believe that we successfully developed a viable technique for manufacturing low cost HTESC.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.19-24
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• 2021

As the size of semiconductor devices decreases, the etching pattern becomes very narrow and a deep high aspect ratio process becomes important. The cryogenic etching process enables high aspect ratio etching by suppressing the chemical reaction of reactive ions on the sidewall while maintaining the process temperature of -100℃. ESC is an important part for temperature control in cryogenic etching equipment. Through the cooling path inside the ESC, liquid nitrogen is used as cooling water to create a cryogenic environment. And since the ESC directly contacts the wafer, it affects the temperature uniformity of the wafer. The temperature uniformity of the wafer is closely related to the yield. In this study, the cooling path was designed and analyzed so that the wafer could have a uniform temperature distribution. The optimal cooling path conditions were obtained through the analysis of the shape of the cooling path and the change in the speed of the coolant. Through this study, by designing ESC with optimal temperature uniformity, it can be expected to maximize wafer yield in mass production and further contribute to miniaturization and high performance of semiconductor devices.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.169-172
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• 2002

This study demonstrated the feasibility of using tape-casting followed by sintering as a low-cost alternative for coating glass-ceramic or glass film on a metal substrate. The process has been successfully used to fabricate a glass-on-stainless steel and a glass-ceramic-on-molybdenum electrostatic chuck(ESC) with the insulating layer thickness about $150{\mu}{\textrm}{m}$. Electrical resistivity data of the coaling were obtained between room temperature and 55$0^{\circ}C$; although the resistivity values dropped rapidly with increasing temperature in both coatings, the glass-ceramic still retained a high value of $10^{10}$ ohm-cm at $500^{\circ}C$. Clamping pressure measurements were done using a mechanical apparatus equipped with a load-cell at temperatures up to $350^{\circ}C$ and applied voltages up to 600V; the clamping behavior of all ESCs generally followed the voltage-squared curve as predicted by theory. Based on these results, we believe that we have a viable technology for manufacturing ESCs for use in reactive-ion etch systems.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.31-36
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• 2001

Dielectric material which is suitably designed for the application of the high-temperature electrostatic chucks(HTESCS) has been developed. Electrical resistivities and dielectric constants of the dielectric layer satisfy the demands for the proper operation of HTESC, and coefficient of thermal expansion(CTE) of the dielectric material matches well that of the bottom insulator so that it secures stable structure. In order to minimize particle contaminations, borosilicate glass(BSG) is selected as a bonding layer between dielectric layer and bottom insulator, and silver is used as a electrode. BSG is solidly bonded between upper dielectric and bottom insulator, and no diffusions or reactions are observed among silver electrode, dielectric, and glass layers. The chucking characteristics of the fabricated HTESC are found to be superior to those of the commercialized one.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.1
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• pp.49-52
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• 2002

This study demonstrated the feasibility of tape casting method to fabricate soda borosilicate glass-coated stainless steel electrostatic chucks(ESC) for low temperature semiconductor processes. Glass coating on the stainless steel substrate was 125 $\mu\textrm{m}$ thick. The adhesion of glass coating was found to be excellent such that it was able to withstand temperature cycling to over $300^{\circ}C$ without cracking and delamination. The electrostatic clamping pressure generally followed the theoretical voltage-squared curve except at elevated temperatures and high applied voltages. The deviations at elevated temperatures and high applied voltages are due to increased leakage current as the electrical resistivity of glass coating drops.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.71-72
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• 2006

We report on plasma damage free chemical vapor deposition technique for the thin film passivation of organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays using catalyzer enhanced chemical vapor deposition (CECVD). Specially designed CECVD system has a ladder-shaped tungsten catalyzer and movable electrostatic chuck for low temperature deposition process. The top emitting OLED with thin film $SiN_x$ passivation layer shows electrical and optical characteristics comparable to those of the OLED with glass encapsulation. This indicates that the CECVD technique is a promising candidate to grow high-quality thin film passivation layer on OLED, OTFT, and flexible displays.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.6
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• pp.235-242
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• 2018

High temperature electrical conductivity of Aluminum Nitride (AlN) ceramics sintered with $Y_2O_3$ as a sintering aid has been investigated with respect to various sintering conditions and MgO-dopant. When magnesium oxide is added as a dopant, liquid glass-film and crystalline phases such as spinel, perovskite are formed as second phases, which affects their electrical properties. According to high temperature impedance analysis, MgO doping leads to reduction of activation energy and electrical resistivity due to AlN grains. On the other hand, the activation energy and electrical resistivity due to grain boundary were increased by MgO doping. This is a result of the formation of liquid glass film in the grain boundary, which contains Mg ions, or the elevation of schottky barrier due to the precipitation of Mg in the grain boundary. For the annealed sample of MgO doped AlN, the electrical resistivity and activation energy were increased further compared to MgO doped AlN, which results from diffusion of Mg in the grains from grain boundary as shown in the microstructure.