• Progress in Superconductivity
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• v.7 no.1
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• pp.97-101
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• 2005

Bi-22l2 tubes for fault current limiter (FCL) were fabricated by centrifugal melting process. $SrSO_4$ ($10\;wt.\;\%$) was added to Bi-2212 powder to lower the melting point of Bi-22l2 and to improve the mechanical properties. The BSCCO powder was completely melted at $1300\;^{\circ}C$ using the RF furnace and then poured into rotating steel mold. The steel mold, preheated at $450\;{\circ}C{\sim}550^{\circ}C$ for 2 hour was rotated at $1020{\sim}2520\;RPM$. The solidified BSCCO tube was cooled down to room temperature in the furnace for 48 hours and separated from the mold between Bi-2212 and the mold. $ZrO_2$ solution was used to separate it easily from the mold and Ag tape was attached in the mold inner wall of the mold to analysis electrical property. Bi-22l2 tube was often cracked when the cooling rate was high. BSCCO tubes with $70{\Phi}{\times}100\;mm,\;50{\Phi}{\times}100\;mm$ and $30{\Phi}{\times}150\;mm$ size were fabricated by centrifugal melting process. The $J_{c}s$ of tubes with $50{\Phi}{\times}100\;mm{\times}4.0\;t$ and $50{\Phi}{\times}100\;mm{\times}4.l\;t$ were 178 and $74.2\;A/cm^2$ at 77K, respectively. The processing condition for Bi-2212 tube fabrication was investigated using XRD and SEM analyses.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.58-58
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• 1999

The diamond films which can be applied to SOD (silicon-on-diamond) structure were deposited on Si(100) substrate using CO/H2 CH4/H2 source gases by microwave plasma chemical vapor deposition(MPCVD), and SOD structure have been fabricated by poly-silicon film deposited on the diamond/Si(100) structure y low pressure chemical vapor deposition(LPCVD). The phase of the diamond film, surface morpholog, and diamond/Si(100) interface were confirmed by X-ray diffraction(XRD), scanning electron microscopy(SEM), atomic force microscopy(AFM), and Raman spectroscopy. The dielectric constant, leakage current and resistivity as a function of temperature in films are investigated by C-V and I-V characteristics and four-point probe method. The high quality diamond films without amorphous carbon and non-diamond elements were formed on a Si(100), which could be obtained by CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5%, respectively. The (111) plane of diamond films was preferentially grown on the Si(100) substrate. The grain size of the films deposited by CO/H2 are gradually increased from 26nm to 36 nm as deposition times increased. The well developed cubo-octahedron 100 structure nd triangle shape 111 are mixed together and make smooth and even film surface. The surface roughness of the diamond films deposited by under the condition of CO/H2 and CH4/H2 concentration ratio of 15.3% and 1.5% were 1.86nm and 3.7 nm, respectively, and the diamond/Si(100) interface was uniform resistivity of the films deposited by CO/H2 concentration ratio of 15.3% are obtained 5.3, 1$\times$10-9 A/cm, 1 MV/cm2, and 7.2$\times$106 $\Omega$cm, respectively. In the case of the films deposited by CH4/H2 resistivity are 5.8, 1$\times$10-9 A/cm, 1 MV/cm, and 8.5$\times$106 $\Omega$cm, respectively. In this study, it is known that the diamond films deposited by using CO/H2 gas mixture as a carbon source are better thane these of CH4/H2 one.

• Journal of Hydrogen and New Energy
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• v.24 no.6
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• pp.543-549
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• 2013

In this study, $La_{0.9}Sr_{0.1}Cr_{0.7}M_{0.3}O_{3{\pm}{\delta}}$ (M=Mn, Ru, Fe, Ni) were prepared by sol-gel method and water gas shift reaction with simulated coal-derived syngas between $400{\sim}650^{\circ}C$ was conducted to evaluate the catalytic activity of prepared catalysts. Physico-chemical properties were characterized by XRD, BET, SEM-EDS and TPR. The formation of perovskite crystallite, $LaCrO_3$ was confirmed and the highest surface area was measured with $La_{0.9}Sr_{0.1}Cr_{0.7}Mn_{0.3}O_{3{\pm}{\delta}}$. Equilibrium conversion of CO above $550^{\circ}C$ was achieved except $La_{0.9}Sr_{0.1}Cr_{0.7}Fe_{0.3}O_{3{\pm}{\delta}}$. and methanation reaction was carried out as side reaction of water gas shift reaction with $La_{0.9}Sr_{0.1}Cr_{0.7}Ni_{0.3}O_{3{\pm}{\delta}}$ and $La_{0.9}Sr_{0.1}Cr_{0.7}Ru_{0.3}O_{3{\pm}{\delta}}$. Conclusively, $La_{0.9}Sr_{0.1}Cr_{0.7}M_n{0.3}O_{3{\pm}{\delta}}$ was the most suitable catalyst of water gas shift reaction above $500^{\circ}C$ for CO conversion and hydrogen production.

• Journal of the Mineralogical Society of Korea
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• v.2 no.2
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• pp.81-89
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• 1989

Alunite occurs as massive, cavity-filling and veinlets in the Cretaceous Hwangsan Formation in the Sungsan mine, Korea. It is a hydrothermal alteration product of rhyolitic tuffs, and associated with dickite, quartz and barite. The average chemical formula of alunite in the mine is $(K_{0.93}Na_{0.07})_{1.00}Al_{3.00}(SO_4)_{2.00}(OH)_6$. Atomic percentage of Na substituting for K in A site of the alunite structure varies from 5.9 to 9.2. Unit-cell volume and c dimension decrease with increasing Na atomic percentage. On the basis of thermal and high temperature XRD analyses, the decomposition of alunite into $KAl(SO_4)_2$ and $NaAl(SO_4)_2$ concomitant with the liberation of structural water (12.86%) occurs at about $550^{\circ}C$. The reconstruction of $KAl(SO_4)_2$ and $NaAl(SO_4)_2$ to $Al_2(SO_4)_3$, arcanite and thenardite, and the crystallization of ${\gamma}-Al_2O_3$ take place at about $720^{\circ}C$. The destruction of $Al_2(SO_4)_3$ structure takes place at about $760^{\circ}C$ removing 3/4 of total $SO_3$ (27.32%).

• Journal of the Korean Electrochemical Society
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• v.8 no.1
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• pp.32-36
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• 2005

[ $WO_3$ ] and $NiO-WO_3$ thin films were deposited on a Si (100) substrate by using high vacuum thermal evaporation. The effects of various film thicknesses on the surface morphology $WO_3$ and $NiO-WO_3$ thin films were investigated. X-ray diffraction (XRD), Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the deposited films. The results suggest that as $WO_3$ thin films became thick, their grain grew up to a $0.6{\mu}m$. On the other hand, NiO-doping to $WO_3$ thin films inhibited the grain growth five times less than undoped $WO_3$ thin films. This results show that NiO doping inhibited the grain growing of $WO_3$ thin films. Also, the variation of NOx sensitivity $(R_{NOx}/R_{air})$ to the thickness of $WO_3$ and $NiO-WO_3$ thin films were measured according to the thickness change of thin films and the working temperature of sensor in 5ppm NOx gas. As a result, $NiO-WO_3$ thin films showed more excellent properties than $WO_3$ thin films for NOx sensitivity.

• Journal of the Korean Electrochemical Society
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• v.17 no.3
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• pp.149-155
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• 2014

In this study, a positive-electrode material in a lithium secondary battery $Li[Ni_{0.575}Co_{0.1}Mn_{0.325}]O_2$ was synthesized as precursor by co-precipitation. Cathode material was synthesized by adding iron. The synthesized cathode material was analyzed by scanning electron microscope and x-ray diffraction. The analysis of x-ray diffraction showed that the a-axis and c-axis is increased by doping iron. And $I_{(003)}/I_{(104)}$ is increased and $I_{(006)}+I_{(102)}/I_{(101)}$ is decreased. Through this result, it was confirmed that the structural stability is improved. And impedance measurements show that the charge transfer resistance ($R_{ct}$) is lowered by doping iron. Consequently, electrochemical properties are improved by doping iron. In particular, the cycle characteristics are improved at a high temperature condition (328 K). Structural stabilities are contributing to the cycle properties.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.47-50
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• 2007

[ $ZnCr_2O_4$ ] shows geometrically frustrated magnet. Recently, $CoCr_2O_4$ has been investigated for multiferroic property and dielectric anomalies by spin-current model. Polycrystalline $CoCr_2O_4$ and $CoCrFeO_4$ compounds was prepared by wet-chemical process. Crystallographic and magnetic properties of $CoCr_2O_4$ and $CoCrFeO_4$ were investigate by using the x-ray diffractometer(XRD), vibrating sample magnetometer(VSM), superconducting quantum interference device magnetometer(SQUID), and $M\"{o}ssbauer$ spectroscopy. The crystal structure was found to be single-phase cubic spinel with space group of Fd3m. The lattice constants of $CoCr_2O_4$ and $CoCrFeO_4$ $a_0$ were determined to be 8.340 and 8.377 ${\AA}$, respectively. The ferrimagnetic transition temperature for the both samples were observed at 97 K and 320 K. The $M\"{o}ssbauer$ absorption spectra at 4.2 K show that the well developed two sextets are superposed with small difference of hyperfine field($H_{hf1}=507\;and\;H_{hf2}=492\;kOe$). Isomer shift values($\delta$) of the two sextets are found to be 0.33 and 0.34 mm/s relative to the Fe metal, respectively, which are consistent with the high spin $Fe^{3+}$ charge state.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.1
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• pp.37-42
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• 2021

The effect of chemical composition on the structural and thermal properties of TiZrN thin films was studied. As the Zr fraction in the deposited TixZr1-xN (x = 0.87, 0.82, 0.7, 0.6, and 0.28) increased, microstructural changes consisted of reduction in the grain size and a gradual transition from columnar structure to granular structure were observed. In addition, it was also confirmed that a gradual crystal phase transition from TiN to TiZrN has occurred as the Zr fraction increased up to 0.4. After heat treatment at 900℃, Ti0.82Zr0.18N and Ti0.7Zr0.3N layers were converted to a form in which rutile phase TiO2 and TiZrO4 oxides coexist, while Ti0.6Zr0.4N layer was converted to TiZrO4 oxide. Among the five compositions of TiZrN films, the Ti0.6Zr0.4N showed the best high temperature stability and produced a significant enhancement in the thermal oxidation resistance of Inconel 617 through suppressing the surface diffusion of Cr caused by thermal oxidation of the Inconel 617 substrate.

• Applied Chemistry for Engineering
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• v.22 no.3
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• pp.255-260
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• 2011

$NH_4{^+}-{\beta}^{{\prime}{\prime}}$-alumina which is expected to an inorganic solid electrolyte of high temperature polymer electrolyte membrane fuel cells (PEMFC) was prepared by ion-exchange reaction of $K^{+}-{\beta}^{{\prime}{\prime}}$-alumina pellet with $NH_4NO_3$ aqueous solution and molten $NH_4NO_3$ salts as an ion-exchange medium in the autoclave and the heating mentle reaction. In the autoclave reaction, the concentrations of $NH_4NO_3$ solution was chosen at 5 and 10 M. Each ion-exchange reaction was carried out at 130, 150, 170, and $200^{\circ}C$ for 2, 4, 6 and 8 h. In the heating mentle reaction, ion-exchange was performed at $200^{\circ}C$ for 2, 4, 6 and 8 h with molten $NH_4NO_3$ salts. In order to determine the effect of reaction times, each ion-exchange reaction was repeated 3 times. The phase stability and the ion-exchange rate of $NH_4{^+}-{\beta}^{{\prime}{\prime}}$-alumina were analyzed by XRD and ICP.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.4
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• pp.125-130
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• 2024

Preparation of ferromagnetic powders for the mixture of hematite and pure Mg powders by ball milling has been investigated. Also, consolidation of the ball-milled powders was performed in a spark plasma sintering machine at 800-1,000℃. It is found that a ferromagnetic Fe-MgO composite powders are obtained by ball milling of hematite and pure Mg powders before 1 hour. The magnetization and coercivity of ball-milled samples change at the results of the solid state reaction of hematite by pure Mg during ball milling. The saturation magnetization of ball-milled samples increases with increasing ball milling time and reaches to a maximum value of 93.4 emu/g after 5 hours of ball milling. Shrinkage change after sintering of ball-milled sample for 5 hours was significant above 300℃ and gradually increased with increasing temperature up to 800℃. X-ray diffraction result shows that the average grain size of Fe in Fe-MgO bulk sample sintered at 900℃ is 50 nm. It can be also seen that the coercivity of bulk sample sintered at 900℃ is still high value of 90 Oe, indicating that the grain growth of magnetic Fe phase during sintering process tend to be suppressed.