• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.159-160
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• 2013

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.755-757
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• 2009

We developed a novel patterning method of organic light emitting materials using a laser-inscribed sacrificial layer for fabricating high-resolution pixels in organic light emitting displays (OLEDs). Our patterning process is capable of achieving high spatial resolution of about 10 ${\mu}m$. Moreover, it has no detrimental effect on the electrical properties of organic materials. This patterning approach is expected to be applicable for patterning and integrating a wide range of organic materials for organic electronic and optoelectronic devices.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.503-507
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• 2002

Mask manufacturing is a high COC and COO process in developing of semiconductor devices, because of the mass production tool with high resolution. Direct writing has been thought to be one of the patterning method to cope with development or small-lot production of the device. This study focused on the development of the direct, mastless patterning process using stereolithography tool for the easy and convenient application to micro and miso scale products. Experiments are utilized by three dimensional CAD/CAM as a mask and photo-curable resin as a photo-resist in a conventional stereo-lithography apparatus. Results show that the resolution of the pattern was achieved about 300 micron because of complexity of SLA apparatus settings, inspite of 100 micro of inherent resolution. This paper concludes that photo resist and laser spot diameter should be adjusted to get finer patterns and the proposed method is significantly feasible to mastless and low cost patterning with micro and miso scale.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.333-334
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• 2012

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1340_1341
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• 2009

In this report, high-resolution metal electrode patterning is demonstrated by using selective surface treatment and dip casting for low-cost printed electronic applications. On hydrophobic octadecyltrichlorosilane treated $SiO_2$ surface, deep UV irradiation was performed through a patterned quartz photomask to selectively control the surface energy of the $SiO_2$ layer. The deep UV irradiated region becomes hydrophilic and by dipping into Ag nano-ink, Ag patterns were formed on the surface. Using this patterning technique, line patterns and dot arrays having less than $10{\mu}m$ pitch were fabricated.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1419-1420
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• 2005

We have synthesized a photo patternable blue lightemitting polyfluorene (PF) derivative containing cross-linkable oxetane units. Poly(9,9-bis-(4-octyloxyphenyl)- fluorene-2,7-diyl-alt-9,9-bis-((3-hexyloxy-3'- ethyl)-oxetane)-fluorene-2,7-diyl) has been synthesized by Suzuki coupling polymerization. The relationship between patterning property and several variables such as the intensity of the exposed UV light, the concentrations of additives, has been studied by using optical microscope UV/visible spectroscopy, photoluminescence and scanning electron microscope (SEM). We obtained fine patterns with 10 mm resolution using the polymer film after exposure and development. This patterning method using conjugated polymers can be applicable to make fine pixels for PLEDs and OFETs.

• Journal of Information Display
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• v.7 no.3
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• pp.1-4
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• 2006

2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (a-Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated as the 2.5 um fine pattern formation technique is integrated with high thermal photo-resist (PR) development. In addition, a novel concept of unique a-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um fine-patterning is a considerably significant technology to obtain higher aperture ratio for higher resolution a-Si TFT-LCD panel realization.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.359-362
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• 2004

Electron beam on high energy acceleration, which travels deeply and sharply through photoresist, became to be used in e-beam lithography apparatus for nano-patterning in due to its high resolution. An advanced electron beam lithography simulation tool is currently undergoing development for nano-patterning. This paper will demonstrate such simulation efforts with experiments at 200 keV e-beam lithography processes on PMMA, ZEP520 of which photoresist parameters and characteristics will be explained with simulation results. Neureuther parameters was extracted from the contrast curve of the resist

• Journal of the Korean Society for Precision Engineering
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• v.26 no.6
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• pp.36-40
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• 2009

Development of maskless lithography techniques can provide a potential solution for the photomask cost issue. Furthermore, it could open a market for small scale manufacturing applications. Since femtosecond lasers have been found suitable for processing of a wide range of materials with sub-micrometer resolution, it is attractive to use this technique for maskless lithography. As a femtosecond laser has recently been developed, both of high power and high photon density are easily obtained. The high photon density results in photopolymerization of photoresist whose absorption spectrum is shorter than that of the femtosecond laser. The maskless lithography using the two-photon absorption (TPA) makes micro structures. In this paper, we present a femtosecond laser direct write lithography for submicron PR patterning, which show great potential for future application.

• Prospectives of Industrial Chemistry
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• v.23 no.6
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• pp.14-24
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• 2020

최근 우수한 발광 특성을 갖는 양자점을 고해상도 디스플레이의 발광 소재로 도입하고자 하는 노력이 활발하다. 양자점을 활용한 디스플레이의 실현을 위해서는 콜로이드 상태인 다색의 양자점을 고해상도로 패터닝하는 기술의 확립이 필요하다. 본 연구에서는 ethane-1,2-diyl bis(4-azido-2,3,5,6-tetrafluorobenzoate)를 양자점용 가교제로 활용하여 용액공정을 기반으로 형성된 양자점 박막을 고해상도로 패터닝한 기술을 소개하고자 한다. 위 양자점용 가교제의 양 말단에는 아지드 그룹을 포함한 작용기가 존재한다. 아지드 기는 자외선에 의해 광 활성화되어 양자점 표면의 알킬 리간드와 가교 결합을 형성함으로써, 양자점 박막에 화학적 내구성을 부여한다. 본 기술을 기반으로, 적색, 녹색, 청색의 카드뮴 기반 양자점을 고해상도로 패터닝하고 정밀하게 배열하여 인치 당 화소 수 1400 이상의 픽셀 형성에 성공하였다. 또한 가교 반응 후에도 성능 저하가 없는 양자점 박막 및 자발광 양자점 다이오드를 개발하였다.