• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.121-125
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• 2011

Ribbon silicon solar cells have been investigated because they can be produced with a lower material cost. However, it is very difficult to get good texturing with a conventional acid solution. To achieve high efficiency should be minimized for the reflectance properties. In this paper, acid vapor texturing and anti-reflection coating of $SiN_x$ was applied for EFG Ribbon Si Wafer. P-type ribbon silicon wafer had a thickness of 200 ${\mu}m$ and a resistivity of 3 $\Omega-cm$. Ribbon silicon wafers were exposed in an acid vapor. Acid vapor texturing was made by reaction between the silicon and the mixed solution of HF : $HNO_3$. After acid vapor texturing process, nanostructure of less than size of 1 ${\mu}m$ was formed and surface reflectance of 6.44% was achieved. Reflectance was decreased to 2.37% with anti-reflection coating of $SiN_x$.

• Korean Journal of Materials Research
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• v.30 no.1
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• pp.1-7
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• 2020

Doping or incorporation with exotic elements are two manners to regulate the optoelectronic properties of transparent conducting (TCO) cadmium oxide (CdO). Nevertheless, the method of doping host CdO by CdTe semiconductor is of high importance. The structural, optical, and electrical properties of CdTe-doped CdO films are studied for the sake of promoting their conducting parameters (CPs), including their conductivity, carrier concentration, and carrier mobility, along with transparency in the NIR spectral region; these are then compared with the influence of doping the host CdO by pure Te ions. X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, and electrical measurements are used to characterise the deposited films prepared by thermal evaporation. Numerous results are presented and discussed in this work; among these results, the optical properties are studied through a merging of concurrent BGN (redshift) and BGW (blue shift) effects as a consequence of doping processes. The impact of hydrogenation on the characterisations of the prepared films is investigated; it has no qualitative effect on the crystalline structure. However, it is found that TCO-CPs are improved by the process of CdTe doping followed by hydrogenation. The utmost TCO-CP improvements are found with host CdO film including ~ 1 %Te, in which the resistivity decreases by ~ 750 %, carrier concentration increases by 355 %, and mobility increases by ~ 90 % due to the increase of N_carr. The improvement of TCO-CPs by hydrogenation is attributed to the creation of O-vacancies because of H₂ molecule dissociation in the presence of Te ions. These results reflect the potential of using semiconductor CdTe -doped CdO thin films in TCO applications. Nevertheless, improvements of the host CdO CPs with CdTe dopant are of a lesser degree compared with the case of doping the host CdO with pure Te ions.

• Solar Energy
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• v.20 no.2
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• pp.55-65
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• 2000

Better electrical and optical properties of ITO thin films were demanded for the window layer of CdS/CdTe solar cells. To match that demand, an ion beam sputtering system was used for the deposition of ITO thin films. The substrate temperature and ion beam energy were controlled to deposit high quality ITO thin films in two cases of Ar ion sputtering and Ar+$O_2$ ion sputtering. The microstructure changed from domain structure in ITO deposited by Ar ions to grain structure in ITO deposited by Ar+$O_2$ ions. The lowest resistivity of ITO films was $1.5\times10^{-4}{\Omega}cm$ at $100^{\circ}C$ substrate temperature in case of Ar ions sputtering. Transmittance in the visible range was over 80% above $100^{\circ}C$ substrate temperature.

• Geophysics and Geophysical Exploration
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• v.1 no.2
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• pp.87-91
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• 1998

Geophysical survey techniques, such as electromagnetic(EM), GPR, and electrical method, have been tested in the landfill area to evaluate the applicability of these methods to soil contamination measurement. The EM method has proven to be excellent on mapping the areal distribution of contaminants and the migration path for leachate. Since the field operation of EM technique is simple as well as fast, we think the EM method must be the first choice for these purposes. Electrical survey techniques have proven to be very effective on mapping sectional distribution of contaminants. Generally, the GPR method is very good on high resolution survey of shallow depth, and field data acquisition is simple, too. But the resistivity method gives better information on deep area, for example, deeper than the depth of 20 m.

• The Korean Journal of Zoology
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• v.17 no.3
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• pp.107-116
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• 1974

The metabolism of CdR-2-$^14 C$ and UdR-2-$^14 C$ in mouse small intestine has been studied in connection with the effect of heat treatment on the enzymes concerned in vitro. CdR-2-$^14 C$ is deaminated reaidly by CdR-aminohydrolase at nucleoside level and then degraded into U by the action of nucleosidase which is quite resistant to cleave N-pentose bond of cytosine nucleosides, CdR and CR. High inactivation temperature of $80^\\circC$ was observed for CdR-aminohydrolase, while nucleosidase has an inactivation temperature of $60^\\circC$. CdR-aminohydrolases in various tissues of mouse were inactivated at $80^\\circC$, but not one in tissues of rabbit. It might be assumed that there are correlations between order specificity and inactivation temperature of the enzyme. A physiological significance of the appearance of CdR-aminohydrolase in differentiated tissues of mammals possibly be regarded as a main function in catabolic pathways.

• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.34-39
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• 2011

Screen printing method is a common way to fabricate the crystalline silicon solar cell with low-cost and high-efficiency. The screen printing metallization use silver paste and aluminum paste for front and rear contact, respectively. Especially the rear contact between aluminum and silicon is important to form the back surface filed (Al-BSF) after firing process. BSF plays an important role to reduces the surface recombination due to $p^+$ doping of back surface. However, Al electrode on back surface leads to bow occurring by differences in coefficient of thermal expansion of the aluminum and silicon. In this paper, we studied the properties of mono crystalline silicon solar cell for rear electrode with aluminum and aluminum-boron in order to characterize bow and BSF of each paste. The 156*156 $m^2$ p-type silicon wafers with $200{\mu}m$ thickness and 0.5-3 ${\Omega}\;cm$ resistivity were used after texturing, diffusion, and antireflection coating. The characteristics of solar cells was obtained by measuring vernier callipers, scanning electron microscope and light current-voltage. Solar cells with aluminum paste on the back surface were achieved with $V_{OC}$ = 0.618V, JSC = 35.49$mA/cm^2$, FF(Fill factor) = 78%, Efficiency = 17.13%.

• Journal of the Korean Magnetics Society
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• v.13 no.6
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• pp.246-250
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• 2003

The electromagnetic properties of Ni$\_$0.8/Zn$\_$0.2/Fe$_2$O$_4$ having stable characteristics in high frequency range were investigated as functions of Bi$_2$O$_3$, CaO contents. Power loss increased in proportion to the amount of Bi$_2$O$_3$ up to 0.3 wt％ and decreased over 0.3 wt％. Also, permeability increased with Bi$_2$O$_3$ contents. The lowest power loss and highest resonance frequency were obtained to the specimens added Bi$_2$O$_3$ of 0.7wt％ and CaO of 0.3 wt％ due to creation of resistivity layers in the grain boundaries originated by the solid solution of Bi$_2$O$_3$ and CaO.

• Journal of the Korean Magnetics Society
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• v.8 no.2
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• pp.62-66
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• 1998

We have studied on the magnetic properties of the specimen with additives Bi$_2$O$_3$and$V_2O_5$ that sintered at 900 $^{\circ}C$ for 4 hours for sybthesizing optimal Ni-Zn-Cu ferrite. Curie temperature rises from 240 $^{\circ}C$ to 270 $^{\circ}C$ as Ni contents increase. Magentic maximum induction$(B_m)$ increases from 2650 G to 3300 G, 3500 G in the specimens with $V_2O_5$ and Bi$_2$O$_3$resectively. On the contrary coercive force $(H_c)$ lowers to 2.05 Oe~1.05 Oe. Permeability all increase in the specimen with additives. In the specimen with additive Bi$_2$O$_3$, we have obtained the low relative loss factor of $6.3{\times}10^{-5}~7.84{\times}10^{-5}$ in the range of 1MHz due to increase of resistivity in grain boundary. In the specimen with additive $V_2O_5$ in spite of increase permeability relative loss factor increase of due to decrease of Q-value.

• Journal of the Korean institute of surface engineering
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• v.48 no.6
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• pp.322-328
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• 2015

We investigated the diffusion behaviors, electrical properties, microstructures, and composition of In-Ga-Zn-O (IGZO) oxide thin films deposited by radio frequency reactive magnetron sputtering with increasing annealing temperatures. The samples were deposited at room temperature and then annealed at 300, 400, 500, 600 and $700^{\circ}C$ in air ambient for 2 h. According to the results of time-of-flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy, no diffusion of In, Ga, and Zn components were observed at 300, 400, 500, $600^{\circ}C$, but there was a diffusion at $700^{\circ}C$. However, for the sample annealed at $700^{\circ}C$, considerable diffusion occurred. Especially, the concentration of In and Ga components were similar at the IGZO thin film but were decreased near the interface between the IGZO and glass substrate, while the concentration of Zn was decreased at the IGZO thin film and some Zn were partially diffused into the glass substrate. The high-resolution transmission electron microscopy results showed that a phase change at the interface between IGZO film and glass substrate began to occur at $500^{\circ}C$ and an unidentified crystalline phase was observed at the interface between IGZO film and glass substrate due to a rapid change in composition of In, Ga and Zn at $700^{\circ}C$. The best values of electron mobility of $15.5cm^2/V{\cdot}s$ and resistivity of $0.21{\Omega}cm$ were obtained from the sample annealed at $600^{\circ}C$.

• Geophysics and Geophysical Exploration
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• v.17 no.4
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• pp.209-215
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• 2014

In order to develop a new mineral exploration technique, a study was carried out about the potential mapping of Moisan area using SIP (Spectral Induced Polarization) data. The SIP inversion results were classified according to the geological regions, and the distribution characteristics of resistivity and phase values of SIP data were analyzed at the ore region. Based on the characteristics of SIP of ore bodies, we performed 3D potential mapping of Moisan area. The analyzed potential map was verified using that the locations and patterns of high potential regions of the results are well matched with those of the known ore bodies. If we get the higher spatial resolution SIP data, the potential mapping technique using SIP data can be effectively applied to the estimation of mining deposit.