• Journal of the Korean institute of surface engineering
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• v.24 no.3
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• pp.119-124
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• 1991

Recently, the trend of research in hard coating is concentrate on developing the process of ionization rate under low operating pressure, to get the thin film with high adhesion and dense microstructures. In this study ionization rate enhancement type PVD process using permanent magnet is developed, which enhances the ionization rate by confining the plasma suppressing the wall loss of electron. By the result to investigate the characteristic of glow discharge, the ionization rate of this process is enhanced about twice as high as that of triod BARE process (about 26%), and more dense TiN microstructures are obtained in this process. Cylindrical ion energy analyzer is made and attached in front of a quadrupole mass filter for the analysis of the energy distribution of reactive gas and activated gas ions from the plasma zone. To analyze the operation mechanism of ion energy analyzer, computer simulation is performed by calculation the electric field environment using finite element method. By these analyses of ion energy distribution of outcoming ions from the plasma zone, it is found that magnetic field enhances ion kinetic energy as well as ionization rate. The other results of this study is that the foundation of feed-back system is constructed, which automatically control the partial pressure of reactive gas. In can be possible by recording the data of mass spectrum and ion energy analysis using A-D converter.

• Journal of Radiation Protection and Research
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• v.34 no.2
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• pp.77-81
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• 2009

An Area Radiation Monitoring System (ARMS) ionization chamber, which had an 11.8 L active volume, was fabricated and performance-tested at KAERI. Low leakage currents, linearities at low and high dose rates were achieved from performance tests. The correlation coefficients between the ionization currents and the dose rates are 1 at high dose rate and 0.99 at low dose rate. In this study, an integration-type ARMS ionization chamber was tested over a year for an evaluation of its long-term stability at a radioisotope (RI) repository of the Young-gwang nuclear power plant. The standard deviation of dose rate of 1 day data and over a 100-days mean value were 6.2 $\mu$R/h and 2.9 $\mu$R/h, respectively. The fabricated ARMS ionization chamber showed stable performance from the results of the long-term tests. Design and performance characteristics of the fabricated ionization chamber for the ARMS from performance-tests are also addressed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.05a
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• pp.389-393
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• 1999

The exact model of impact ionization events in which has influence on device efficiency, is to be necessary element for device simulation. Recently, a modified Keldysh formula with two set of power exponent of 7.8 and 5.6 is used to simulate carrier transport. This model is, however, not suitable as impact ionization model in low energy range since this ignore direction dependent properties of impact ionization. The impact ionization rate is highly anisotropic at low energy, while it becomes isotropic at higher energy range. Note that impact ionization events frequently occur in high energy range. For calculating impart ionization rate, we use full energy band structure derived from Fermi's golden rule and empirical pseudopotential method. We compare with calculated and experimental value, and investigate direction dependent conduction energy band structure along the direction of <100>, <110> and <111>. We know that the threshold energy of impact ionization is anisotropic and impact ionization rate is very deviated from modified Keldish formula, in relatively low energy range.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.3
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• pp.697-703
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• 2000

As device dimensions are lastly scaled down, impact ionization(I.I.) events are very important to analyze hot carrier transport in high energy region, and the exact model of impact ionization is demanded on device simulation. We calculate full band model by empirical pseudopotential method and the impact ionization rate is derived from modified Keldysh formula. We calculate impact ionization coefficients by full band Monte Carlo simulator to investigate temperature dependent characteristics of impact ionization for GaAs as a function of field. Resultly impact ionization coefficients are in good agreement with experimental values at look. We how energy is increasing along increasing the field, while energy is decreasing along increasing the temperature since the phonon scattering rates for emission mode are very high at high temperature. The logarithmic fitting function of impact ionization coefficients is described as a second orders function of temperature and field. The residuals of the logarithmic fitting function are mostly within 5%. We Dow, therefore, the logarithm of impact ionization coefficients has quadratic dependence on temperature, and we can save time of calculating the temperature dependent impact ionization coefncients as a function of field.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.460-464
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• 2000

As device dimensions are lastly scaled down, impact ionization(I.I.) events are very important to analyze hot carrier transport in high energy region, and the exact model of impact ionization is demanded on device simulation. We calculate full band model by empirical pseudopotential method and the impact ionization rate is derived from modified Keldysh formula. We calculate impact ionization coefficients by full band Monte Carlo simulator to investigate temperature-and field-dependent characteristics of impact ionization for GaAs. Resultly impact ionization coefficients are In good agreement with experimental values at 300k. We know energy is increasing along increasing the field. while energy is decreasing along increasing the temperature since the phonon scattering rates for omission mode are very high at high temperature. The logarithmic fitting function of impact ionization coefficients is described as a second orders function for temperature and field. The residuals of the logarithmic fitting function are mostly within 5%. We know, therefore, logarithm of impact ionization coefficients has quadratic dependence on temperature and field, and we can save time of calculating the temperature- and field-dependent impact ionization coefficients.

• Journal of Korean Society for Atmospheric Environment
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• v.28 no.4
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• pp.446-453
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• 2012

Destruction and removal efficiency (DRE) of $SF_6$ was tested with varying degrees of ionization and initial concentrations of $SF_6$. The applied dose of ionization energy varied from 0 to 400 kGy. The initial concentration of $SF_6$ gas also varied from 1,000 ppm to 2,500 ppm. In order to assess the effect of a residence time on DRE (Destruction and Removal Efficiency, %), experiments were also conducted at different irradiation times of 3, 5, 10, 15, and 20 sec, respectively. The DRE of $SF_6$ increased with an increasing amount of dose and current. Regardless of initial concentration of $SF_6$, 90% level of DRE was achieved by applying over 10 mA of electrical current.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.11
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• pp.112-119
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• 1996

Impact ionization model in GaAs has been presented by modified keldysh formula with two sets of power exponent of 7.8 and 5.6 in study. Impact ionization rate is derived from fermil's golden rule and ful lenergy band stucture based on empirical pseudopotential method. Impact ionization rates show anisotropic property in low energy region (<3eV), but isotropic in high energy region (3>eV). Full band monte calo simulator is coded for investigating the validity of the GaAs impact ionization model, and validity is checked by comparing impact ionization coefficients with experimental values and ones in anisotropic model. Valley transitions to energy alteration are explained by investigating electron motion in brillouin zone for full band model to electric field variation.

• Journal of Radiation Protection and Research
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• v.31 no.3
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• pp.149-153
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• 2006

An ionization chamber is still widely used in many fields by virtue of its' simple operational characteristics and the possibility of its' various shapes. A parallel type of an ionization chamber for a steel sheet thickness measurement was designed and fabricated. High pure xenon gas, which was pressurized up to 6 atm, was chosen as a filling gas to increase the current response and sensitivity for a radiation. A high pressure gas system was also constructed. The active volume and the incident window size of the fabricated ionization chamber were $30\;cm^3\;and\;12\;cm^2$, respectively. Preliminary tests with a 25 mCi $^{241}Am$ gamma-ray source and evaluation tests in a standard X-ray field were performed. The optimal operation voltage was set from the results of the collection efficiency calculation by using an experimental two-voltage method. Linearity for a variation of the steel sheet thickness, which is the most important factor for an application during a steel sheet thickness measurement, was 0.989 in this study.

• Bulletin of the Korean Chemical Society
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• v.25 no.1
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• pp.101-105
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• 2004

The laser ablation/ionization time-of-flight mass spectrometry is applied to the isotopic analysis of solid samples using a home-made instrument. The technique is convenient for solid sample analysis due to the onestep process of vaporization and ionization of the samples. The analyzed samples were lead, cadmium, molybdenum, and ytterbium. To optimize the analytical conditions of the technique, several parameters, such as laser energy, laser wavelength, size of the laser beam on the samples surface, and high voltages applied on the ion source electrodes were varied. Low energy of laser light was necessary to obtain the optimal mass resolution of spectra. The 532 nm light generated mass spectra with the higher signal-to-noise ratio compared with the 355 nm light. The best mass resolution obtained in the present study is ~1,500 for the ytterbium.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.10a
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• pp.337-340
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• 2008

When high surge voltage invaded into the ground rod contacted with ground water, the ionization phenomena are happened in the water. Although some researchers have surveyed the ionization phenomena in soil, they have just analyzed the variation of the ground resistance. The most important role of the ground rod is to elect human beings from potential rise and to dissipate energy to the earth safely. In this wort we presented the method evaluating the potential reduction and energy dispersion. Also we analyzed theses factors as a function of charging voltages at the water resistivity of $50\;{\Omega}{\cdot}m$ using the Matlab Program. As a result the ground rod potential was reduced to 38 kV by ionization just below breakdown voltage. The energy more than half of the total injected energy was dispersed through the grounding electrode caused due to ionization.