• Bulletin of the Korean Chemical Society
• /
• v.32 no.1
• /
• pp.191-195
• /
• 2011

This study reports the root cause of the improved rate performance of $LiFePO_4$ after Cr doping. By measuring the chemical diffusion coefficient of lithium ($D_{Li}$) using cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS), the correlation between the electrochemical performance of $LiFePO_4$ and Li diffusion is acquired. The diffusion constants for $LiFePO_4$/C and $LiFe_{0.97}Cr_{0.03}PO_4$/C measured from CV are $2.48{\times}10^{-15}$ and $4.02{\times}10^{-15}cm^2s^{-1}$, respectively, indicating significant increases in diffusivity after the modification. The difference in diffusivity is also confirmed by EIS and the $D_{Li}$ values obtained as a function of the lithium content in the cathode. These results suggest that Cr doping facilitates Li ion diffusion during the charge-discharge cycles. The low diffusivity of the $LiFePO_4$/C leads to the considerable capacity decline at high discharge rates, while high diffusivity of the $LiFe_{0.97}Cr_{0.03}PO_4$/C maintains the initial capacity, even at high C-rates.

• Journal of the Microelectronics and Packaging Society
• /
• v.24 no.2
• /
• pp.49-53
• /
• 2017

We study on the change of electrical properties of two-dimensional (2D) $SnSe_2$ materials with respect to Cl doping as $SnSe_{1.994}Cl_{0.006}$ under a high temperature condition. (300~450 K) By the simple solid-state reaction method, non-and Cl-doped 2D $SnSe_2$ materials are successfully synthesized with negligible impurities as confirmed by X-ray diffraction. From the temperature dependence of resistivity, it is observed that the conduction mechanism is changed from hopping to degenerate conduction with Cl doping. By Hall effect measurement, an increase on electron carrier concentration from ${\sim}7{\times}10^{16}$ to ${\sim}3{\times}10^{18}cm^{-3}$ with Cl doping verifies that Cl is an effective electron donor which results in the encouraged carrier concentration. Detailed analysis for temperature dependent Hall mobility reveals that the electrical transports in high temperature regime are governed by the grain boundary-controlled mechanism for non-doped $SnSe_2$, which is effectively suppressed by Cl-doping as entering metallic transport regime.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.308-309
• /
• 2012

One of the critical issues in the growth of multijunction solar cell is the formation of a highly doped Esaki interband tunnel diode which interconnects unit cells of different energy band gap. Small electrical and optical losses are the requirements of such tunnel diodes [1]. To satisfy these requirements, tens of nanometer thick gallium arsenide (GaAs) can be a proper candidate due to its high carrier concentration in low energy band gap. To obtain highly doped GaAs in molecular beam epitaxy, the temperatures of Si Knudsen cell (K-cell) for n-type GaAs and Be K-cell for p-type GaAs were controlled during GaAs epitaxial growth, and the growth rate is set to 1.75 A/s. As a result, the doping concentration of p-type and n-type GaAs increased up to $4.7{\times}10^{19}cm^{-3}$ and $6.2{\times}10^{18}cm^{-3}$, respectively. However, the obtained n-type doping concentration is not sufficient to form a properly operating tunnel diode which requires a doping concentration close to $1.0{\times}10^{19}cm^{-3}$ [2]. To enhance the n-type doping concentration, n-doped GaAs samples were grown with a lower growth rate ranging from 0.318 to 1.123 A/s at a Si K-cell temperature of $1,180^{\circ}C$. As shown in Fig. 1, the n-type doping concentration was increased to $7.7{\times}10^{18}cm^{-3}$ when the growth rate was decreased to 0.318 A/s. The p-type doping concentration also increased to $4.1{\times}10^{19}cm^{-3}$ with the decrease of growth rate to 0.318 A/s. Additionally, bulk resistance was also decreased in both the grown samples. However, a transmission line measurement performed on the n-type GaAs sample grown at the rate of 0.318 A/s showed an increased specific contact resistance of $6.62{\times}10^{-4}{\Omega}{\cdot}cm^{-2}$. This high value of contact resistance is not suitable for forming contacts and interfaces. The increased resistance is attributed to the excessively incorporated dopant during low growth rate. Further studies need to be carried out to evaluate the effect of excess dopants on the operation of tunnel diode.

• Korean Journal of Materials Research
• /
• v.30 no.10
• /
• pp.509-514
• /
• 2020

The two key variables of an Si solar cell, i.e., emitter (n-type window layer) and base (p-type substrate) doping levels or concentrations, are studied using Medici, a 2-dimensional semiconductor device simulation tool. The substrate is p-type and 150 ㎛ thick, the pn junction is 2 ㎛ from the front surface, and the cell is lit on the front surface. The doping concentration ranges from 1 × 10¹⁰ cm^-3 to 1 × 10²⁰ cm^-3 for both emitter and base, resulting in a matrix of 11 by 11 or a total of 121 data points. With respect to increasing donor concentration (Nd) in the emitter, the open-circuit voltage (Voc) is little affected throughout, and the short-circuit current (Isc) is affected only at a very high levels of Nd, exceeding 1 × 10¹⁹ cm^-3, dropping abruptly by about 12%, i.e., from Isc = 6.05 × 10^-9 A·㎛^-1, at Nd = 1 × 10¹⁹ cm^-3 to Isc = 5.35 × 10^-9 A·㎛^-1 at Nd = 1 × 10²⁰ cm^-3, likely due to minority-carrier, or hole, recombination at the very high doping level. With respect to increasing acceptor concentration (Na) in the base, Isc is little affected throughout, but Voc increases steadily, i.e, from Voc = 0.29 V at Na = 1 × 10¹² cm^-3 to 0.69 V at Na = 1 × 10¹⁸ cm^-3. On average, with an order increase in Na, Voc increases by about 0.07 V, likely due to narrowing of the depletion layer and lowering of the carrier recombination at the pn junction. At the maximum output power (Pmax), a peak value of 3.25 × 10^-2 W·cm^-2 or 32.5 mW·cm^-2 is observed at the doping combination of Nd = 1 × 10¹⁹ cm^-3, a level at which Si is degenerate (being metal-like), and Na = 1 × 10¹⁷ cm^-3, and minimum values of near zero are observed at very low levels of Nd ≤ 1 × 10¹³ cm^-3. This wide variation in Pmax, even within a given kind of solar cell, indicates that selecting an optimal combination of donor and acceptor doping concentrations is likely most important in solar cell engineering.

• Journal of Powder Materials
• /
• v.16 no.6
• /
• pp.396-402
• /
• 2009

Tantalum nitrides ($Ta_3N_5$) have been developed to substitute the Cd based pigments for non-toxic red pigment. Various doping elements were doped to reduce the amount of high price Tantalum element used and preserve the red color tonality. Doping elements were added in the synthesizing process of precursor of amorphous tantalum oxides and then Tantalum nitrides doped with various elements were obtained by ammonolysis process. The average particle size of final nitrides with secondary phases was larger than the nitride without the secondary phases. Also secondary phases reduced the red color tonality of final products. On the other hand, final nitrides without secondary phase had orthorhombic crystal system and presented good red color. In other words, in the case of nitrides without secondary phases, doping elements made a solid solution of tantalum nitride. In this context, doping process controlled the ionic state of nitrides and the amount of oxygen/nitrogen in final nitrides affected the color tonality.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.194.1-194.1
• /
• 2015

Transition metal dichalcogenide (TMD) with layered structure, has recently been considered as promising candidate for next-generation flexible electronic and optoelectronic devices because of its superior electrical, optical, and mechanical properties.[1] Scalability of thickness down to a monolayer and van der Waals expitaxial structure without surface dangling bonds (consequently, native oxides) make TMD-based thin film transistors (TFTs) that are immune to the short channel effect (SCE) and provide very high field effect mobility (${\sim}200cm^2/V-sec$ that is comparable to the universal mobility of Si), respectively.[2] In addition, an excellent photo-detector with a wide spectral range from ultraviolet (UV) to close infrared (IR) is achievable with using $WSe_2$, since its energy bandgap varies between 1.2 eV (bulk) and 1.8 eV (monolayer), depending on layer thickness.[3] However, one of the critical issues that hinders the successful integration of $WSe_2$ electronic and optoelectronic devices is the lack of a reliable and controllable doping method. Such a component is essential for inducing a shift in the Fermi level, which subsequently enables wide modulations of its electrical and optical properties. In this work, we demonstrate n-doping method for $WSe_2$ on poly-4-vinylphenol and poly (melamine-co-formaldehyde) (PVP/PMF) insulating layer and adjust the doping level of $WSe_2$ by controlling concentration of PMF in the PVP/PMF layer. We investigated the doping of $WSe_2$ by PVP/PMF layer in terms of electronic and optoelectronic devices using Raman spectroscopy, electrical measurements, and optical measurements.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.421-422
• /
• 2013

Recently, ZnO has received attentionbecause of its applications in optoelectronics and spintronics. In order to investigate deep level defects in ZnO, we used N-doped ZnO with various of the N-doping concentration. which are reference samples (undoped ZnO), 27%, 49%, and 88%-doped ZnO. Photoinduced current transient spectroscopy (PICTS) measurement was carried out to find deep level traps in high resistive ZnO:N. In reference ZnO sample, a deep trap was found to located at 0.31 (as denoted as the CO trap) eV below conduction band edge. And the CN1 and CN2 traps were located at 0.09, at 0.17 eV below conduction band edge, respectively. In the case of both annealed samples at 200 and $300^{\circ}C$, the defect density of the CO trap increases and then decreases with an increase of N-doping concentration. On the other hands, the density of CN traps has little change according to an increase of N-doping concentration in the annealed sample at $300^{\circ}C$. According to the result of PICTS measurement for different N-doping concentration, we suggest that the CO trap could be controled by N-doping and the CN traps be stabilized by thermal annealing at $300^{\circ}C$.

• Proceedings of the Korea Society of Environmental Toocicology Conference
• /
• 1996.12a
• /
• pp.63-63
• /
• 1996

We performed chromosomal aberration assay in Chinese Hamster Lung (CHL) cells in vitro to evaluate theclastogenicity of 11 synthetic chemicals which were listed in Toxicity Evaluation Program of Ministry of Environment of Republic of Korea in 1996. All of the chemicals were carried out MTT assay to determine the 50% cell growth inhibition concentration. All compounds were tested with and without metabolic activation system. Benzoyl chloride revealed positive result at $43\;\mu\textrm{g}/m{\ell}$ in the presence of metabolic activation system, and at 30.8, 61.5 and $123\;\mu\textrm{g}/m{\ell}$ in the absence of metabolic activation system. And p-phenoxy ethanol was observed as positive with the metabolic activation system, but negative without metabolic activation system. Especially 2-propyn-l-ol showed high frequency of pulverization and showed critical difference of cytotoxicity between with and without S9 mixture. Pulverizatiuon is not included in the frequency of structural aberration in our criteria. Dicyclopentadiene, methacrylic acid, aa-dimethylbenzyl hydroperoxide, benzylbutyl phthalate, and p-chlorophenal were revealed negative results.esults.

• Korean Journal of Materials Research
• /
• v.30 no.1
• /
• pp.1-7
• /
• 2020

Doping or incorporation with exotic elements are two manners to regulate the optoelectronic properties of transparent conducting (TCO) cadmium oxide (CdO). Nevertheless, the method of doping host CdO by CdTe semiconductor is of high importance. The structural, optical, and electrical properties of CdTe-doped CdO films are studied for the sake of promoting their conducting parameters (CPs), including their conductivity, carrier concentration, and carrier mobility, along with transparency in the NIR spectral region; these are then compared with the influence of doping the host CdO by pure Te ions. X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, and electrical measurements are used to characterise the deposited films prepared by thermal evaporation. Numerous results are presented and discussed in this work; among these results, the optical properties are studied through a merging of concurrent BGN (redshift) and BGW (blue shift) effects as a consequence of doping processes. The impact of hydrogenation on the characterisations of the prepared films is investigated; it has no qualitative effect on the crystalline structure. However, it is found that TCO-CPs are improved by the process of CdTe doping followed by hydrogenation. The utmost TCO-CP improvements are found with host CdO film including ~ 1 %Te, in which the resistivity decreases by ~ 750 %, carrier concentration increases by 355 %, and mobility increases by ~ 90 % due to the increase of N_carr. The improvement of TCO-CPs by hydrogenation is attributed to the creation of O-vacancies because of H₂ molecule dissociation in the presence of Te ions. These results reflect the potential of using semiconductor CdTe -doped CdO thin films in TCO applications. Nevertheless, improvements of the host CdO CPs with CdTe dopant are of a lesser degree compared with the case of doping the host CdO with pure Te ions.

• Korean Chemical Engineering Research
• /
• v.55 no.2
• /
• pp.253-257
• /
• 2017

Graphene is a monolayer carbon material which consists of $sp^2$ bonding between carbon atoms. Its excellent intrinsic properties allow graphene to be used in various research fields. Many researchers believe that graphene is suitable for electronic device materials due to its high electrical conductivity and carrier mobility. Through chemical doping, n- or p-type graphene can be obtained, and consequently graphene-based devices which have more comparable structure to common semiconductor-based devices can be fabricated. In our research, we introduced the dielectrophoresis process to the chemical doping step in order to improve the effect of chemical doping of graphene selectively. Under 10 kHz and $5V_{pp}$ (peak-to-peak voltage), doping was conducted and the Au nanoparticles were effectively formed, as well as aligned along the edges of graphene. Effects of the selective chemical doping on graphene were investigated through Raman spectroscopy and the change of its electrical properties were explored. We proposed the method to enhance the doping effect in local region of a graphene layer.