• 제목/요약/키워드: High and%2For Low Temperature Region

검색결과 276건 처리시간 0.033초

우리나라 겨울철 극한저온현상 발생 시 종관 기후 패턴 (Synoptic Climatic Patterns for Winter Extreme Low Temperature Events in the Republic of Korea)

  • 최광용;김준수
    • 대한지리학회지
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    • 제50권1호
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    • pp.1-21
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    • 2015
  • 본 연구에서는 지난 40년 동안(1973~2012)의 우리나라 기상청 산하 61개 지점 일기온 자료와 NCEP/NCAR 재분석 자료를 바탕으로 우리나라 지역별 겨울철 극한저온현상 발생 시 동아시아 영역의 종관 기후 패턴의 특징을 밝히고자 하였다. 일최고기온과 일최저기온 하위 10 퍼센타일 기준으로 정의된 겨울철 극한저온현상은 주로 겨울철 전반기(12월 초순~1월 중순)에 2~7일 간격으로 우리나라 전역 또는 주요 산맥 기준 동서지역으로 구분되어 발생함을 알 수 있다. 해수면기압과 바람벡터 등의 지상 종관 자료 합성장 분석에 따르면 총 13개로 구분되는 우리나라 겨울철 극한저온현상 발생 공간 패턴은 산맥뿐만 아니라 시베리아 고기압과 알류샨 저기압의 상대적인 확장 범위와 강도와 밀접한 관련성이 있음을 알 수 있다. 대류권 중층(500 hPa) 종관기후도 분석에 따르면, 블러킹 형태의 저기압이 상층 찬 공기를 고위도 지역에서 한반도로 이류시킬 때 우리나라에 겨울철 극한저온현상이 발생하기에 적합한 조건이 형성됨을 알 수 있다. 이러한 결과들은 지역규모 이상의 동아시아 겨울철 극한저온현상 예보를 향상시키기 위해 시베리아 고기압, 알류샨 저기압, 상층 블러킹 등의 종관 기후 요소를 모니터링하는 것이 중요함을 가리킨다.

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전력케이블용 저밀도폴리에틸렌박막의 전기전도특성 (Electric conduction properties of low density Polyethylene film for Power cable)

  • 황종국;홍능표;이용우;소병문;홍진웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1994년도 추계학술대회 논문집
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    • pp.143-146
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    • 1994
  • In older to investigate the properties of electric conduction in low density polyethylene(LDPE) for power cable, the thickness of specimen was the 30, 100($\mu\textrm{m}$) of LDPE. The experimental condition for conductive properties was measured until the breakdown occurs at temperature ranges from 30 to 110[$^{\circ}C$] and in the electric field of 1 to 5 ${\times}$10$^2$[Mv/m]. As for increase of temperature, the current density of LDPE was increased with constant ratio in low field, but changes with exponential function in high field. The tunnel current of pre-breakdown region is shifted toward low field as much as thermal excitation energy.

나노급 수소화된 비정질 실리콘층 두께에 따른 저온형성 니켈실리사이드의 물성 연구 (Property of Nickel Silicides with Hydrogenated Amorphous Silicon Thickness Prepared by Low Temperature Process)

  • 김종률;최용윤;박종성;송오성
    • 대한금속재료학회지
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    • 제46권11호
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    • pp.762-769
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    • 2008
  • Hydrogenated amorphous silicon(a-Si : H) layers, 120 nm and 50 nm in thickness, were deposited on 200 $nm-SiO_2$/single-Si substrates by inductively coupled plasma chemical vapor deposition(ICP-CVD). Subsequently, 30 nm-Ni layers were deposited by E-beam evaporation. Finally, 30 nm-Ni/120 nm a-Si : H/200 $nm-SiO_2$/single-Si and 30 nm-Ni/50 nm a-Si:H/200 $nm-SiO_2$/single-Si were prepared. The prepared samples were annealed by rapid thermal annealing(RTA) from $200^{\circ}C$ to $500^{\circ}C$ in $50^{\circ}C$ increments for 30 minute. A four-point tester, high resolution X-ray diffraction(HRXRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), and scanning probe microscopy(SPM) were used to examine the sheet resistance, phase transformation, in-plane microstructure, cross-sectional microstructure, and surface roughness, respectively. The nickel silicide on the 120 nm a-Si:H substrate showed high sheet resistance($470{\Omega}/{\Box}$) at T(temperature) < $450^{\circ}C$ and low sheet resistance ($70{\Omega}/{\Box}$) at T > $450^{\circ}C$. The high and low resistive regions contained ${\zeta}-Ni_2Si$ and NiSi, respectively. In case of microstructure showed mixed phase of nickel silicide and a-Si:H on the residual a-Si:H layer at T < $450^{\circ}C$ but no mixed phase and a residual a-Si:H layer at T > $450^{\circ}C$. The surface roughness matched the phase transformation according to the silicidation temperature. The nickel silicide on the 50 nm a-Si:H substrate had high sheet resistance(${\sim}1k{\Omega}/{\Box}$) at T < $400^{\circ}C$ and low sheet resistance ($100{\Omega}/{\Box}$) at T > $400^{\circ}C$. This was attributed to the formation of ${\delta}-Ni_2Si$ at T > $400^{\circ}C$ regardless of the siliciation temperature. An examination of the microstructure showed a region of nickel silicide at T < $400^{\circ}C$ that consisted of a mixed phase of nickel silicide and a-Si:H without a residual a-Si:H layer. The region at T > $400^{\circ}C$ showed crystalline nickel silicide without a mixed phase. The surface roughness remained constant regardless of the silicidation temperature. Our results suggest that a 50 nm a-Si:H nickel silicide layer is advantageous of the active layer of a thin film transistor(TFT) when applying a nano-thick layer with a constant sheet resistance, surface roughness, and ${\delta}-Ni_2Si$ temperatures > $400^{\circ}C$.

In-situ electron beam growth of $YBa_2Cu_3O_{7-x}$ coated conductors on metal substrates

  • Jo, W.;Ohnishi, T.;Huh, J.;Hammond, R.H.;Beasley, M.R.
    • Progress in Superconductivity
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    • 제8권2호
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    • pp.175-180
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    • 2007
  • High temperature superconductor $YBa_2Cu_3O_{7-x}$ (YBCO) films have been grown by in-situ electron beam evaporation on artificial metal tapes such as ion-beam assisted deposition (IBAD) and rolling assisted biaxially textured substrates (RABiTS). Deposition rate of the YBCO films is $10{\sim}100{\AA}/sec$. X-ray diffraction shows that the films are grown epitaxially but have inter-diffusion phases, like as $BaZrO_3\;or\;BaCeO_3$, at their interfaces between YBCO and yttrium-stabilized zirconia (YSZ) or $CeO_2$, respectively. Secondary ion mass spectroscopy depth profile of the films confirms diffused region between YBCO and the buffer layers, indicating that the growth temperature ($850{\sim}900^{\circ}C$) is high enough to cause diffusion of Zr and Ba. The films on both the substrates show four-fold symmetry of in-plane alignment but their width in the -scan is around $12{\sim}15^{\circ}$. Transmission electron microscopy shows an interesting interface layer of epitaxial CuO between YBCO and YSZ, of which growth origin may be related to liquid flukes of Ba-Cu-O. Resistivity vs temperature curves of the films on both substrates were measured. Resistivity at room temperature is between 300 and 500 cm, the extrapolated value of resistivity at 0 K is nearly zero, and superconducting transition temperature is $85{\sim}90K$. However, critical current density of the films is very low, ${\sim}10^3A/cm^2$. Cracking of the grains and high-growth-temperature induced reaction between YBCO and buffer layers are possible reasons for this low critical current density.

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저온에서 형성된 니켈실리사이드의 적외선 흡수 특성 (IR Absorption Property in Nano-thick Nickel Silicides)

  • 한정조;송오성;최용윤
    • 한국재료학회지
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    • 제19권4호
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    • pp.179-185
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    • 2009
  • We fabricated thermally evaporated 30 nm-Ni/(20 nm or 60 nm)a-Si:H/Si films to investigate the energy-saving property of silicides formed by rapid thermal annealing (RTA) at temperatures of $350^{\circ}C$, $450^{\circ}C$, $550^{\circ}C$, and $600^{\circ}C$ for 40 seconds. A transmission electron microscope (TEM) and a high resolution X-ray diffractometer (HRXRD) were used to determine the cross-sectional microstructure and phase changes. A UVVIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM and HRXRD analysis, for the nickel silicide formed at low temperatures below $450^{\circ}C$, we confirmed columnar-shaped structures with thicknesses of $20{\sim}30\;nm$ that had ${\delta}-Ni^2Si$ phases. Regarding the nickel silicide formed at high temperatures above $550^{\circ}C$, we confirmed that the nickel silicide had more than 50 nm-thick columnar-shaped structures with a $Ni_{31}Si_{12}$ phase. Through UV-VIS-NIR analysis, nickel silicide showed almost the same absorbance in the near IR region as well as ITO. However, in the middle IR region, the nickel silicides with low temperature showed similar absorbance to those from high temperature silicidation.

Spatial distribution of pigment concentration around the East Korean Warm Current region derived from Satellite data

  • Kim, Sang-Woo;Kim, Young-Seup;Yoon, Hong-Joo;Saitoh, Sei-ich
    • 대한원격탐사학회:학술대회논문집
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    • 대한원격탐사학회 2002년도 Proceedings of International Symposium on Remote Sensing
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    • pp.655-655
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    • 2002
  • Spatial distribution of phytoplankton pigment concentration (PPC) and sea surface temperature (SST) around the East Korean Warm Current (EKWC) was described, using both ocean color images and advanced very high resolution radiometer (AVHRR) images. Water mass in this region can be classified into five categories in the horizontal profile of PPC and SST, nLw(normalized water-leaving radiance) images: (1) coastal cold water region associated with concentrations of dissolved organic material or yellow colored substances and suspended sediments, (2) cold water region of thermal frontal occurred by a combination of phytoplankton absorption and suspended materials, (3) warm water overlay region by the phytoplankton absorption than the suspended materials; (4) warm water region occurred by the low phytoplankton absorption, and (5) offshore region occurred by the high phytoplankton absorption. In particular, the highest PPC area appeared in the ocean color and SST images with a band shaped distribution of the thermal front and ocean color front region, which is located the coastal cold waters along western thermal front of the warm streamer of the EKWC.

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수중(水中) 미소(微少) 봉대봉(棒對棒) 전극간(電極間)의 방전현상(放電現象) 기초연구(基礎硏究) (A Basic Study on the Discharge of a Rod-to-Rod Microgap in the Pure Water)

  • 문재덕;이대희;김진규
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1992년도 하계학술대회 논문집 B
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    • pp.918-921
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    • 1992
  • A basic study on the discharge phenomenum of rod-to-rod microgap in the deionized water has been investigated with emphasis on the microgap spacing. The I-V charateristics for the case of ac and dc applied voltages had 3 different regions, a low conduction ohmic region, a medium conduction corona discharge region, and a high conduction arc discharge region. The corona discharge in the deionized water for the case of ac and de applied voltages had no different from the those in the air. But the arc discharge in the water occurred pulsative with sound which, however it is not clear, would be encounted due to the influences from the low temperature of the ambient water, vast of electrolytic generated electronegative gases(e.g. $O_2$, OH, O) and water molecules($H_2O$), and the space charge effects near the rod in the microgap from the ions of $H^+$, $OH^-$, $O_2^-$, etc, whose mobilities in the water are originally very low.

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남부평야지에서 적미 품종의 이앙시기에 따른 폴리페놀 함량 및 수량변이 (Polyphenol Content and Yield Variation of Red-colored Cultivars Depends on Transplanting Date in Southern Plain Region of Korea)

  • 배현경;오성환;황정동;서종호;김상열;오명규
    • 한국작물학회지
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    • 제62권3호
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    • pp.166-171
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    • 2017
  • 본 실험은 적미의 재배에 있어서 고품질 고수량을 위한 적정이앙시기를 구명하기 위해 네 품종의 적미를 재료로 2015~2016년에 밀양에서 실시하였다. 1. 수량구성요소 중 이앙시기 변화에 따라 가장 크게 달라지는 요인은 등숙률이었고 6월 20일 이후 이앙하면 등숙률이 낮아져 현미수량이 하락하였다. 2. 6월 20일에 이앙했을 때 폴리페놀 함량과 현미수량을 종합한 폴리페놀 생산량이 2,341~3,349 g/10a로 가장 높았다. 3. 출수 후 30일간 평균온도가 낮을 수록 폴리페놀 함량은 증가하였으나 일정 수준 이하로 온도가 떨어지면 현미수량이 감소하였기 때문에 $22{\sim}23^{\circ}C$ 정도가 고품질 고수량 적미를 생산하기에 가장 적정한 온도였다. 4. 출수 후 30일간 평균온도가 $22{\sim}23^{\circ}C$가 되는 시점을 최적 출수기로 하고 출수소요적산온도를 $1,660^{\circ}C$로 하여 계산한 최적 이앙시기는 밀양시가 6월 18일~6월 24일 이었다. 경상남도 지역은 6월 중순에서 7월 초순, 경상북도 지역은 6월 초순에서 6월 중하순이 최적 이앙기였다.

전이금속으로 치환된 Spinel형 LiMn$_{2-y}$M$_y$O$_4$(M=Cr$^{3+}$)의 구조 및 전기적 성질 (Electrical Properties and Structures of Spinel Type LiMn$_{2-y}$M$_y$O$_4$(M=Cr$^{3+}$) Doped with Transition Metal)

  • 형경우;김중헌;권태윤
    • 한국세라믹학회지
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    • 제36권9호
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    • pp.930-936
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    • 1999
  • For LiMn2O4 based spinel structures the stoichiometric reaction conditions need be considered carefully because the electrical properties depend on the structural stability. In order to obtain the homogeneous compound the Pechini process was chosen which could obtain a stoichiometry phase even low temperature and dependency of the synthetic condition on structural stability and electrochemical performance was investigated. X-ray diffraction studies showed that the compounds doped with transition metal have smaller lattice constants than those un doped. The dc conductivity was evaluated by a four probe method in the low and high temperature region respectively. The variations of basal spacings for the cathode were detected to be dependent on the extent of current flows (under dc)

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Ti-15V-3Al합금의 시효거동과 열처리에 따른 고온 기계적 특성 (Aging Behavior and Effect of Heat Treatment on High Temperature Mechanical Properties in Ti-15V-3AI-3Cr-3Sn)

  • 이재원;이백희;이규환;김영도
    • 한국재료학회지
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    • 제14권1호
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    • pp.13-18
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    • 2004
  • Titanium alloys are the one of promising candidate materials for medium high temperature parts in the aircraft, automobile, petrochemistry and electrochemistry because of their high strength with low density in medium high temperature. In this study, the effects of aging and heat treatments on the mechanical properties of Ti-15-3 alloy in medium high temperature, which was $400^{\circ}C$, were studied. Solid solution treatment was performed at $8000^{\circ}C$ of $\beta$ phase region for 1 h and the alloy was quenched in water. The alloy was aged at $5000^{\circ}C$ of $\alpha$ and $\beta$ two-phase region for 1, 2, 4, 8, ... and 100 h to increase the mechanical property. The $\beta$ single phase was observed at all parts of specimens in Ti-15-3 alloy after ST. As the aging at $500^{\circ}C$, fine precipitates of a phase was generated from matrix of $\beta$ phase and the microstructure was consisted of weaving structure such as Widmanstiitten a phase. The most suitable aging time is 24h in$ 400^{\circ}C$. At this time, strength is 1164 MPa and elongation is about 12%. In room temperature, elongation of Ti-15-3 alloy aged at $500^{\circ}C$ for 16 h is poor (=3%) in spite of high tensile strength (1458 MPa).