• Proceedings of the Korean Vacuum Society Conference
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• 1993.07a
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• pp.11-13
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• 1993

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.777-780
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• 2005

The high vacuum in a electron beam lithography is basic condition, because electron beam vanish by collision with air molecules in generally atmosphere. To make high vacuum state, the vacuum control valve is essential. Most vacuum control valve are manual units. So, user of manual vacuum valve must have understanding vacuum process to change from low vacuum to high vacuum state. The user of electron beam lithography are troubled with operation of manual vacuum valve, in case the vacuum chamber is frequently open. In this paper, the design and performance test of auto vacuum control valve for electron beam lithography are described. With the auto vacuum control valve, the high vacuum level can reach 2.8E-5 Torr.

• Transactions of Materials Processing
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• v.21 no.3
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• pp.195-201
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• 2012

A vacuum ladling die casting system is suggested as a means to obtain a high vacuum level. A high vacuum of 17.8 mmHg is obtained by sealing the inner space of the mould. The sample product is a rear-head housing for an auto-compressor, and the die-casting with 6-cavities was conducted. The flow analysis shows that the filling speed during vacuum ladling is faster than for a non-vacuum system. The air holes in the sample product were too small to be seen with the naked eye in X-ray films. Density tests show that the high vacuum ladling system reduces the internal porosity as much as 57.8% when compared to the non-vacuum system. A defective rate of only 0.17% was found from leak testing. The results of this research prove that the high vacuum die-casting process is useful for manufacturing of aluminium components under high internal pressure.

• International Journal of Internet, Broadcasting and Communication
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• v.7 no.2
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• pp.28-35
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• 2015

Thin film electronic devices which brought the current mobile environment could be fabricated only under the high quality vacuum conditions provided by high vacuum systems. Especially for the development of advanced thin film devices, constant high quality vacuum as the deposition pressure is definitely needed. For this purpose, the variable conductance throttle valves were employed to the high vacuum system. In this study, the effects of throttle valve applications on vacuum characteristics were simulated to obtain the optimum design modelling of variable conductance of high vacuum system. Commercial simulator of vacuum system, $VacSim^{(multi)}$, was used on this investigation. Reliability of employed simulator was verified by the simulation of the commercially available models of high vacuum system. Simulated vacuum characteristics of the proposed modelling were agreed with the observed experimental behaviour of real systems. Pressure limit valve and normally on-off control valve were schematized as the modelling of throttle valve for the constant process-pressure of below $10^{-3}torr$. Simulation results were plotted as pump down curve of chamber, variable valve conductance and conductance logic of throttle valve. Simulated behaviors showed the applications of throttle valve sustained the process-pressure constantly, stably, and reliably.

• International journal of advanced smart convergence
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• v.10 no.1
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• pp.159-165
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• 2021

Electronic devices used in the mobile environments fabricated under the plasma conditions in high vacuum system. Especially for the development of advanced electronic devices, high quality plasma as the process conditions are required. For this purpose, the variable conductance throttle valves for controllable plasma employed to the high vacuum system. In this study, we analyzed the effects of throttle valve applications on vacuum characteristics simulated to obtain the optimum design modelling for plasma conditions of high vacuum system. We used commercial simulator of vacuum system, VacSim(multi) on this study. Reliability of simulator verified by simulation of the commercially available models of high vacuum system. Simulated vacuum characteristics of the proposed modelling agreed with the observed experimental behaviour of real systems. Pressure limit valve and normally on-off control valve schematized as the modelling of throttle valve for the constant process-pressure of below 10-3 torr. Simulation results plotted as pump down curve of chamber, variable valve conductance and conductance logic of throttle valve. Simulated behaviors showed the applications of throttle valve sustained the process-pressure constantly, stably, and reliably in plasma process.

• International journal of advanced smart convergence
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• v.5 no.2
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• pp.1-7
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• 2016

Recently, with the development of advanced thin film devices comes the need for constant high quality vacuum as the deposition pressure is more demanding. It is for this reason our research seeks to understand how the variable design factors are employed in such vacuum systems. In this study, the effects of design factor applications on the vacuum characteristics were simulated to obtain the optimum design modeling of variable models on an ultra high vacuum system. The commercial vacuum system simulator, $VacSim^{(multi)}$, was used in our investigation. The reliability of the employed simulator was verified by the simulation of the commercially available models of ultra high vacuum system. Simulated vacuum characteristics of the proposed modeling aligned with the observed experimental behavior of real systems. Simulated behaviors showed the optimum design models for the ideal conditions to achieve optimal pressure, pumping speed, and compression ratio in these systems.

• International journal of advanced smart convergence
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• v.11 no.4
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• pp.88-95
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• 2022

Vacuum simulation is associated with the prediction and calculation of how materials, pumps and systems will perform using mathematical equations. In this investigation, three different high vacuum systems were simulated and estimated with each vacuum characteristics by VacTran simulator. In each of modelled vacuum systems, selection of gas loads into vessel, combination of rough and high vacuum pumps and dimension of conductance elements were proposed as system variables. In pump station model, the pumping speed to pressures by the combination of root pump was analyzed under the variations of vessel volume. In this study, the effects of outgassing dependent on vessel materials was also simulated and aluminum vessel was estimated to optimum materials. It was obtained from the modelling with diffusion pump that the diameter, length of 50×250[mm]roughing line was characterized as optimum variables to reach the ultimate pressure of 10E-7[torr]. Optimum design factors for vacuum characteristics of modelled vacuum system were achieved by VacTran simulator. Feasibility of VacTran as vacuum simulator was verified and applications of VacTran in high tech process expected to be increased.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.7
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• pp.791-798
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• 1988

Films of Cr, Cu, and Al were deposited by the evaporation technique at the high vacuum level-high evaporation rate and the low vacuum level-low evaporation rate. We measured sheet resistance and light transmittance, and observed microstructure and diffraction pattern by TEM, and investigated oxygen content in thin film by AES. We discussed the relations among microstructure, sheet resistance, and light transmittance with AES data. We found that the films deposited at the high vacuum level-high evaporation rate have small oxygen content in thin film comparing to the films deposited at the low vacuum level-low vacuum level-low evaporation rate, and that the films having crystalline structure and larger grain size were formed in the case of the high vacuum level-high evaporation rate and they showed lower sheet resistance and lower light transmittance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.3
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• pp.181-185
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• 2016

One of the important issues for fabricating the microelectronic display devices such as FED, PDP, and VFD is to obtain a high vacuum level inside the panel. In addition, sustaining the initial high vacuum level permanently is also very important. In the conventional packing technology using a tabulation method, it is not possible to obtain a satisfiable vacuum level for a proper operation. In case of FED, the poor vacuum level results in the increase of operating voltage for electron emission from field emitter tips and an arcing problem, resultantly shortening a life time. Furthermore, the reduction of a sealing process time in the PDP production is very important in respect of commercial product. The most probable method for obtaining the initial high vacuum level inside the space with such a miniature and complex geometry is a vacuum in-line sealing which seals two glass plates within a high vacuum chamber. The critical solution for the vacuum sealing is to develop a frit glass to avoid the bubbling or crack problems during the sealing process at high temperature of about $400^{\circ}C$ under the vacuum environment. In this study, the suitable frit power was developed using a mixture of vitreous and crystalline type frit powders, and a vacuum sealed CNT FED with 2 inch diagonal size was fabricated and successfully operated.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.103-112
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• 2014

The Korea Research Institute of Standards and Science (KRISS) has three major vacuum systems: an ultrasonic interferometer manometer (UIM; Section II, Figs. 1 and 2) for a low vacuum, a static expansion system (SES; Section III, Figs. 3 and 4) for a medium vacuum, and an orifice-type dynamic expansion system (DES, Section IV, Figs. 5 and 6) for high and ultra-high vacuum systems. For each system, explicit measurement model equations with multiple variables are given. According to ISO standards, all of these system variable errors were used to calculate the expanded uncertainty (U). For each system, the expanded uncertainties (k = 1, confidence level = 95%) and relative expanded uncertainty (expanded uncertainty/generated pressure) levels are summarized in Table 4. Within the uncertainty limits, our bilateral and key comparisons [CCM.P-K4 (10 Pa to 1 kPa)] are extensive and in good agreement with those of other nations (Fig. 8 and Table 5).