• 대한기계학회논문집B
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• 제30권6호
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• pp.594-601
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• 2006

Optimization study has been carried out to design an energy efficient, high temperature vacuum furnace which satisfies users' design requirements. First of all, the transient temperature distribution and the uniform temperature zone results have been compared with the steady state results to validate the feasibility of using steady state solution when constructing the thermal analysis DB. In order to check the accuracy, the interpolated results using thermal analysis DB have been compared with the computational and the experimental results. In this study, total heat flux is selected as the objective function, and the geometry parameters of vacuum furnace including the thickness of insulator, the heat zone sizes and the interval between heater and insulator are the design variables. The Uniform temperature zone sizes and the wall temperature are imposed as the design constraints. With negligible computational cost a high temperature vacuum furnace which has $40\sim60%$ reduction in total heat flux is designed using thermal analysis DB.

• 한국분말재료학회지
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• 제5권4호
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• pp.293-298
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• 1998

In all larger hardmetal workshops furnaces for dewaxing, vacuum sintering or vacuum and overpressure sintering are today's standard. The furnace technology is well established. Equipment specifications such as operating overpressure, determine sintering cost, product quality, safety and reliability of the furnace and ultimately influence the competitiveness of the hard metal procucer in the global market. Essential furnace requirements are an efficient utilization of the furnace, an environmental friendly dewaxing system, high temperature uniformity, metallurgical treatment with process gases, as well as reduced cooling time by means of rapid cooling. Examples of reduced sintering costs are described achieved using a new design of vacuum sintering furnace with an improved rapid cooling device, cooling times are reduced by up to 45%. Additionally, a cost comparison of two different designs of vacuum overpressure sintering furnaces are included.

• 시스템엔지니어링학술지
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• 제1권1호
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• pp.14-19
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• 2005

High temperature vacuum furnaces or high standard electric furnaces demand high technology level and high production cost. Therefore, an iterative design process and the optimization approach under integrated computing environment are required to reduce the development risk. Moreover, it also required to develop an integrated design software that can manage the centralized database system between factory and design department, and the automated furnace design and analysis. The developed software is dedicated to the development of the vacuum (electric) furnaces. Based on the distribute middleware system, the GUI module, the CAD module, the thermal analysis module and the optimization module are integrated. For the DBMS, Microsoft Access is employed, the GUI is developed using Visual Basic language, and AutoCAD is utilized for the configuration design. By investigating the analysis code interface, the analysis and optimization process, and the data communication method, the overall system architecture, the method to integrate the optimizer and ana lysis codes, and the method to manage the data flow are proposed and verified through the optimal furnace design.

• 한국경영과학회:학술대회논문집
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• 대한산업공학회/한국경영과학회 2004년도 춘계공동학술대회 논문집
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• pp.273-276
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• 2004

Multidisciplinary Design Optimization (MDO) is an individual and parallel design framework applied in designing large and complex systems. for successful implementation of MDO framework it is essential to manage data in efficient and integrated manner. In this study, we present a case study to implement database to support designing super high temperature vacuum furnace with MDO technology. For that purpose we first extract required data based on the analysis of design process and then data flows between different programs are analyzed. Finally an E-R diagram is presented to design database schema.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.322-322
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• 2010

For boron doping on n-type silicon wafer, around $1,000^{\circ}C$ doping temperature is required, because of the relatively low solubility of boron in a crystalline silicon comparing to the phosphorus case. Boron doping by fiber laser annealing and lamp furnace heat treatment were carried out for the uniformly deposited p-a-Si:H layer. Since the uniformly deposited p-a-Si:H layer by cluster is highly needed to be doped with high temperature heat treatment. Amorphous silicon layer absorption range for fiber laser did not match well to be directly annealed. To improve the annealing effect, we introduce additional lamp furnace heat treatment. For p-a-Si:H layer with the ratio of $SiH_4:B_2H_6:H_2$=30:30:120, at $200^{\circ}C$, 50 W power, 0.2 Torr for 30 min. $20\;mm\;{\times}\;20\;mm$ size fiber laser cut wafers were activated by Q-switched fiber laser (1,064 nm) with different sets of power levels and periods, and for the lamp furnace annealing, $980^{\circ}C$ for 30 min heat treatment were implemented. To make the sheet resistance expectable and uniform as important processes for the $p^+$ layer on a polished n-type silicon wafer of (100) plane, the Q-switched fiber laser used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the fiber laser treatment showed the trade-offs between the lifetime and the sheet resistance as $100\;{\omega}/sq.$ and $11.8\;{\mu}s$ vs. $17\;{\omega}/sq.$ and $8.2\;{\mu}s$. Diode level device was made to confirm the electrical properties of these experimental results by measuring C-V(-F), I-V(-T) characteristics. Uniform and expectable boron heavy doped layers by fiber laser and lamp furnace are not only basic and essential conditions for the n-type crystalline silicon solar cell fabrication processes, but also the controllable doping concentration and depth can be established according to the deposition conditions of layers.

• 한국진공학회지
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• 제6권4호
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• pp.326-336
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• 1997

트랜지스터의 소오스/드레인 접합 특성에 가장 큰 영향을 미치는 인자는 이온 주입 시 발생한 실리콘 내에 발생한 결합이라는 사실에 착안하여, 기존 소오스/드레인 접합 형성 공정과 다른 새로운 방식을 도입하여 이온 주입에 의해 생긴 결함의 제어를 통해 고품질 초 저접합 $p^+$-n접합을 형성하였다. 기존의 $p^+$소오스/드레인 접합 형성 공정은 $^{49}BF_2^+$ 이온 주입 후 층간 절연막들인 TEOS(Tetra-Ethyl-Ortho-Silicate)막과 BPSG(Boro-Phospho-Silicate-Glass)막을 증착 후 BPSG막 평탄화를 위한 furnace annealing 공정으로 진행된다. 본 연구에서는 이러한 기존 공정과는 달리 층간 절연막 증착 전 저온 RTA첨가 방법, $^{49}BF_2^+$와 $^{11}B^+$ 을 혼합하여 이온 주입하는 방법, 그리고 이온 주입 후 잔류 산화막을 제거하고 MTO(Medium temperature CVD oxide)를 증착하는 방법을 제시하 였으며, 각각의 방법은 모두 이온 주입에 의한 실리콘 내 결합 농도를 줄여 기존의 방법보 다 더 우수한 양질의 초 저접합을 형성할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.10-11
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• 2006

In this study, the Ni/Co/TiN (6/2/25 nm) structure was deposited for thermal stability estimation. Vacuum (30 mTorrs) annealing was carried out to compare with furnace annealing in nitrogen ambient. The proposed Ni/Co/TiN structure exhibited low temperature silicidation and wide range of rapid thermal process (RTP) windows. The sheet resistance was too high to measure after furnace annealing at $600^{\circ}C$ due to the thin thickness (15 nm) of the nickel silicide. However, the sheet resistance maintained stable characteristics up to $600^{\circ}C$ for 30 min after vacuum annealing. Therefore, the low resistance of thin film nickel silicide was obtained by vacuum annealing at $600^{\circ}C$.

• Korean Chemical Engineering Research
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• 제58권4호
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• pp.581-587
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• 2020

본 연구에서는 기존의 2,3-Butanediol (2,3-BDO) 탈수 반응시스템의 문제점을 해결하기 위해 새로운 반응 시스템이 제안되었다. 대기압 근처에서 2,3-BDO 반응물을 반응온도 360 ℃ 까지 올리기 위해서, 상용공정에서 일반적으로 사용되는 용광로를 사용하게 되면 반응 시스템이 적절히 작동할 수 없다는 것이 확인되었다. 그것은 2,3-BDO 올리고머로 고려되는 물질 때문이다. 그것은 용광로 튜브 안의 막힘, 폭발과 같은 안전 문제 뿐 아니라 반응 시스템의 유지보수의 어려운 문제점을 일으킬 수 있다. 그러한 문제점을 해결하기 위한 방법은 용광로를 대신해 감압운전 하에서 고압스팀을 사용하는 열교환기를 사용해서 반응물의 온도를 낮추고 반응 온도를 낮추는 것이다. 반응 속도론을 사용하여, 반응기의 성능이 감압운전과 더 낮은 온도, 330 ℃에서 크게 다르지 않다는 것을 보였다. 이 결과는 왜 새로운 반응 시스템이 제안되었는지를 설명한다.

• Journal of Korean Vacuum Science & Technology
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• 제2권2호
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• pp.97-100
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• 1998

We have investigated the effects of crystalline activation on solid phase crystallization (SPC) of amorphous silicon (a-Si) thin films. Wet blasting and self ion implantation were employed as the activation treatments to induce macro or micro crystalline damages on deposited a-Si films. Low temperature and larger grain crystallization were obtained by the applied two-step activation. High degree of crystallinity was also observed on both furnace and rapid SPC. crystalline activations showed the promotion of nucleation on the activated regions and the retardation of growth in an amorphous matrix in SPC. The observed behavior of two-step SPC was strongly dependent on the applied activation and annealing processes. It was also found that the diversified effects by macro and micro activations on the SPC were virtually diminished as the annealing temperature increased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1596-1598
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• 2002

This paper presents the characteristics of Ta-N thin-film strain gauges as high-temperature strain gauges, which were deposited on Si substrate by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-($4{\sim}16%$)$N_2$). These films were annealed for 1 hour in $2{\times}10^{-6}$ Torr vacuum furnace range $500{\sim}1000^{\circ}C$. The optimized conditions of Ta-N thin-film strain gauges were annealing condition($900^{\circ}C$, 1 hr.) in 8% $N_2$ gas flow ratio deposition atmosphere. Under optimum conditions, the Ta-N thin-films for strain gauges is obtained a high resistivity, ${\rho}$=768.93 ${\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR = -84 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF = 4.12.