• 조명전기설비학회논문지
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• 제20권4호
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• pp.7-11
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• 2006

본 논문에서는 $Mo/SiO_2/Si(100)$ 기판 위에 MOCVD(Metal-Organic-Chemical-Vapor Deposition)법을 이용하여 C축 방향으로 성장시킨 AIN(Aluminum Nitride) 박막을 이용하여 GHz대역 무선 통신에서 사용할 수 있는 FBAR(Film-Bulk-Acoustic Resonator)을 제작하였다. 제작된 공진부의 공진주파수와 반공진주파수는 각각 3.189[GHz]와 3.224[GHz]으로 측정되었으며, Q값(Quality Factor)과 유효한 전기기계 결합계수(${k_{eff}}^2$)는 각각 24.7과 2.65[%]로 평가되었다. AIN의 증착(Deposition) 조건은 $950[^{\circ}C]$의 기판표면(Substrate) 온도, 20Torr의 압력, 25000의 N/Al의 V/III비로 증착하였다. $4{\times}10^{-5}[\Omega{cm}]$의 Mo 하부전극 고유저항과 $Mo/SiO_2/Si(100)$ 기판 위에 AIN(0002) FWHM(Full-Width at Half-Maximum) 4를 갖는 C축 방향성의 AIN 박막을 성공적으로 성장시켰다. 따라서 증착된 AIN박막의 FWHM값은 GHz대역 무선 통신용 RF(Radio Frequency) 밴드 패스 필터 설계에 유용하게 사용될 것이다.

• 한국결정성장학회지
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• 제21권2호
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• pp.60-64
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• 2011

고감도 적외선 이미지 센서에 적용이 가능한 우수한 TCR(temperature coefficient of resistance) 값을 갖고 적외선 파장영역에서 흡수 특성을 갖는 막 형성을 위해, 본 연구에서는 Silica와 Titanium 분말을 혼합비율을 달리하여 준비한 후 열 기상 증착기를 이용하여 상온에서 게르마늄과 유리 기판 위에 각각 $(SiO_2)_x-(Ti)_y$ 막을 제작하였다. 챔버 내에 위치한 혼합분말이 담겨진 텅스텐 보트와 기판 간의 거리는 15.5 cm이며, 사용된 $SiO_2$와 Ti 분말의 혼합비율 x : y는 각각 90 : 10,80 : 20, 70 : 30, 60 : 40이다. $(SiO_2)_x-(Ti)_y$ 막의 전기적 저항은 273~333 K 영역에서 온도 변화에 따라 측정하였으며, TCR 값은 측정된 막의 저항 값으로부터 계산되었다. 다양한 혼합비율 조건 하에서 형성된 $(SiO_2)_x-(Ti)_y$ 막은 수 $k{\Omega}$~수백 의 $k{\Omega}$ 저항특성을 보였으며, 이러한 막의 TCR은 $-1.4{\sim}-2.6%K^{-1}$의 다양한 값을 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.327-327
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• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

• 자원환경지질
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• 제31권1호
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• pp.59-68
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• 1998

Gravity, magnetic and VLF surveys were carried out to investigate the dimension, nature and stability of the waste materials filled in the Seokdae landfill, Pusan. The Seokdae landfill, which is located in a former valley, was used as a dump for mainly domestic-type waste materials for 6 years from 1987. The landfill site is classfied into A, B, C and D areas according to the sequence of dumping period. The Bouguer gravity anomaly map shows maximum variation of 3.1 mgals on the landfill and its general appearance has close relation with the thickness of waste filled. The local variation of anomaly, however, reflect the degree of compactness of waste materials which may be affected by the nature of waste and dumping time. In the case of area A, where dumping process was terminated at the very last stage, most part show negative anomaly compared to other areas. We think that the composition of the waste materials in the area A is high in leftover food and paper trash and they are still in uncompacted condition. In area B, the general trend of variation of gravity anomaly is appeared to be high anomaly in northern part and decrease to the southern part. This is well matched with the prelandfill topography of the landfill site. The southern part of area B is located in the center of valley and its present surface is comparatively rugged, which may be due to the differential settlement of deep burried waste. The thickness of waste in area C is relatively thin, but the gravity anomaly appears to be low. Considering the present condition of surface, it can be inferred that low density wastes such as leftover food were mainly filled in this area. Area D, as in the case of area B, shows gravity anomaly that has close relation with the prelandfill topography. Magnetic data show the variation of total field intensity varies in the range of 46600~51000 nT, and reach maximum anomaly of 4400 nT. The overall pattern of magnetic anomaly well reflects the distribution of magnetic materials in the landfill. The result of VLF survey reveals several low resistivity zones, which may serve as underground passages for contaminant flow, in the area C located near the small Village.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.363-363
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• 2014

Ruthenium (Ru) has attractive material properties due to its promising characteristics such as a low resistivity ($7.1{\mu}{\Omega}{\cdot}cm$ in the bulk), a high work function of 4.7 eV, and feasibility for the dry etch process. These properties make Ru films appropriate for various applications in the state-of-art semiconductor device technologies. Thus, it has been widely investigated as an electrode for capacitor in the dynamic random access memory (DRAM), a metal gate for metal-oxide semiconductor field effect transistor (MOSFET), and a seed layer for Cu metallization. Due to the continuous shrinkage of microelectronic devices, better deposition processes for Ru thin films are critically required with excellent step coverages in high aspect ratio (AR) structures. In these respects, atomic layer deposition (ALD) is a viable solution for preparing Ru thin films because it enables atomic-scale control of the film thickness with excellent conformality. A recent investigation reported that the nucleation of ALD-Ru film was enhanced considerably by using a zero-valent metallorganic precursor, compared to the utilization of precursors with higher metal valences. In this study, we will present our research results on the synthesis and characterization of novel ruthenium complexes. The ruthenium compounds were easy synthesized by the reaction of ruthenium halide with appropriate organic ligands in protic solvent, and characterized by NMR, elemental analysis and thermogravimetric analysis. The molecular structures of the complexes were studied by single crystal diffraction. ALD of Ru film was demonstrated using the new Ru metallorganic precursor and O2 as the Ru source and reactant, respectively, at the deposition temperatures of $300-350^{\circ}C$. Self-limited reaction behavior was observed as increasing Ru precursor and O2 pulse time, suggesting that newly developed Ru precursor is applicable for ALD process. Detailed discussions on the chemical and structural properties of Ru thin films as well as its growth behavior using new Ru precursor will be also presented.

• 지질공학
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• 제26권2호
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• pp.207-221
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• 2016

최근 국내 필댐 및 저수지의 노후화가 급속도로 진행되고 있으며, 이에 따른 제체의 손상이나 붕괴사고가 잇따르고 있다. 그러나 필댐의 핵심적인 차수기능을 담당하는 코어층에 대한 열화와 잠재 위해성 분류에 대한 연구는 거의 미진한 실정이다. 본 연구에서는 노후화가 진행 중인 13개 기존 코어형 필댐에 대해(준공 후 경과년수 9-52년, 댐 높이 22-67 m), 무수보링에 의한 코어층 시추 지반조사와 표준관입시험, 2D 및 3D 전기비저항탐사, 물성·역학시험을 수행하여 공학적 기반의 잠재적 위해성 유형을 국내 최초로 분류, 제시하였다. 중심코어층에 대한 무수보링 시추 지반조사 결과, 코어재 잠재 위해성 유형을 국부적 포화대, 신속한 공내수 유입, 조립질 혼재 코어재, 상대적 저 강성의 네 종류로 분류하였다. 코어형 필댐의 잠재 위해성 유형 중국부적 포화대 유형은 코어존 내 유로의 성장 및 발달에 의한 내적침식의 가능성이 존재하므로 가장 위험한 위해성으로 분류 되었으며, 코어재의 열화 등급에 따라 적절한 차수능 회복을 위한 보수보강이 필요한 것으로 판단되었다. 그 외 세 가지 위해성 유형은 즉각적인 조치보다는 지속적인 모니터링과 정기 검사의 강화가 필요할 것으로 검토되었다. 본 연구대상 댐의 분석 결과, 준공 후 경과년수와 댐 코어재의 열화 양상과는 상관성이 크게 없는 것으로 나타났다. 본 연구 결과는 코어형 필댐의 노후화에 따른 댐의 안전관리와 성능개선에 있어 유용한 자료로 활용 가능할 것으로 판단된다.

• 한국전기전자재료학회논문지
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• 제29권8호
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• pp.461-465
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• 2016

n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below $670^{\circ}C$ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of $5.99m{\Omega}cm^2$ was shown for the optimum firing temperature of $865^{\circ}C$. Over $900^{\circ}C$, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of $40.2mA/cm^2$, open-circuit voltage of 620 mV and convert efficiency of 19.11%.

• 한국자기학회지
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• 제5권1호
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• pp.8-14
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• 1995

$Fe_{87}Zr_{7}B_{6}$(at.%)조성의 합금에 Fe에 대해 비고용원소인 Ag를 B와 1.0at.% 치환한 $Fe_{87}Zr_{7}B_{5}Ag_{1}$(at.%) 조성의 비정질리본을 액체급냉법으로 제조하여, 연자 기특성을 조사하였다. 급냉응고된 비정질리본의 연자기특성을 향상시키기 위하여 $300~600^{\circ}C$에서 $50^{\circ}C$ 간격으로 열처리한 후, 비정질리본의 연자기특성 및 미세조직의 변화를 조사하였다. 열처리방 법은 진공분위기에서 무자장중 열처리하여 상온까지 노냉했다. $Fe_{87}Zr_{7}B_{5}Ag_{1}$ 비 정질리본을 $400^{\circ}C$에서 1시간 등온열처리하였 때, 보자력$(H_{c})$ 15 mOe, 초투자율$(\mu_{i})$ 288,000(1kHz, 2mOe) 그리고 철손$(W_{c})$ 50 W/kg(100kHz, 1,000G)이라는 Co계 비정질합금에 필적할 수 있는 대단히 우수한 연자성재료가 개발되었다. 이와 같은 우수한 연자기특성은 Fe 와 비고용원소인 Ag 를 소량 첨가함에 따라 열처리에 의해 2~3 nm 크기의 미세한 Fe-rich cluster 형성에 따른 전기저항의 증가, 자왜의 감소 그리고 자구(domain) 크기의 감소에 기인한다고 생각된다.

• 한국재료학회지
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• 제23권3호
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• 지구물리와물리탐사
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• 제9권2호
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• pp.163-170
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• 2006

탄화수소 확정매장량의 부족으로 인해, 주로 육상이나 천해에서 수행되던 탄화수소 탐사는 점차 대륙붕을 넘어 깊은 바다까지 확대되고 있다. 심해에서도 탄성파 자료의 획득이 가능하지만, 탄산염암, 화산암 등이 분포하는 해저지층, 해저 영구 동토 지역 등과 같이 탄성파의 반사 강도가 강하고 산란이 심한 지층에서 얻은 자료는 지층의 분석이 쉽지 않기 때문에 보완 탐사가 필요하다. 탄화수소의 전기비저항이 높은 특성으로 인하여 전자탐사로 그 부존 유무를 판단할 수 있으므로, 해양 인공송신원 전자탐사는 석유 탐사의 보완적인 방법의 하나로써 이용되기 시작하였다. 이 탐사 방법은 천해지역보다 오히려 심해지역에서 더 높은 감도를 얻을 수 있어서 특히 심해지역의 보완 탐사로 유용하다. 여러 석유회사에서 전자탐사가 보완 탐사로 유용함을 인식한 지는 불과 5년 밖에 되지 않았지만, 현재는 시추 지역 선정에도 전자탐사를 이용하고 있다. 전자탐사는 도입 초기부터 매우 훌륭한 결과를 얻었으며, 최근에는 여러 회사에서 탄화수소 탐사를 위해 자기지전류탐사나 전자탐사를 수행하고 있다.