• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.4
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• pp.7-11
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• 2006

In this paper, it is reported that film-bulk-acoustic resonator with high c-axis oriented AIN film on $Mo/SiO_2/Si(100)$ using metal-organic-chemical-vapor deposition was fabricated. The resonant frequency and anti-resonant frequency of the fabricated resonator were observed with 3.189[GHz] and 3.224[GHz], respectively. The quality factor and the effective electromechanical coupling coefficient(${k_{eff}}^2$) were measured with 24.7 and 2.65[%], respectively. The conditions of AIN deposition were substrate temperature of $950[^{\circ}C]$, pressure of 20Torr, and V-III ratio of 25000. A high c-axis oriented AIN film with $4{\times}10^{-5}[\Omega{cm}]$ resistivity of Mo bottom electrode and $4[^{\circ}]$ of AIN(0002) full-width at half-maximum(FWHM) on $Mo/SiO_2/Si(100)$ was grown successfully. The FWHM value of deposited AIN film is useful for the RF band pass filter specification for GHz-band wireless local area network.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.2
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• pp.60-64
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• 2011

High sensitivity IR image sensors require materials characteristics with temperature coefficient of resistance (TCR) and IR range absorption. In this study, the metal-dielectric thermo sensitive films (MDTF) based on $(SiO_2)_x-(Ti)_y$ composition were deposited on substrates of germanium and glass by thermal evaporator. The $SiO_2$ : Ti mixture was made from the ratio of 9 : 1, 8 : 2, 7 : 3, 6 : 4, respectively. $(SiO_2)_x-(Ti)_y$ mixture powder was loaded on tungsten boat in evaporator and was 15.5 cm from the substrate. Resistance of $(SiO_2)_x-(Ti)_y$ in the range of 273~333K were measured as a function of temperature. Temperature coefficient of resistance (TCR) was calculated by the resistance variation. Under the various mixture ratios condition, it is possible to obtain $SiO_2$-Ti layers with resistance from units kilo-ohm to hundreds kilo-ohm. Finally, our results showed that Temperature coefficient of resistance (TCR) of these films varies from -1.4 to $-2.6%K^{-1}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.327-327
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• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

• Economic and Environmental Geology
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• v.31 no.1
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• pp.59-68
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• 1998

Gravity, magnetic and VLF surveys were carried out to investigate the dimension, nature and stability of the waste materials filled in the Seokdae landfill, Pusan. The Seokdae landfill, which is located in a former valley, was used as a dump for mainly domestic-type waste materials for 6 years from 1987. The landfill site is classfied into A, B, C and D areas according to the sequence of dumping period. The Bouguer gravity anomaly map shows maximum variation of 3.1 mgals on the landfill and its general appearance has close relation with the thickness of waste filled. The local variation of anomaly, however, reflect the degree of compactness of waste materials which may be affected by the nature of waste and dumping time. In the case of area A, where dumping process was terminated at the very last stage, most part show negative anomaly compared to other areas. We think that the composition of the waste materials in the area A is high in leftover food and paper trash and they are still in uncompacted condition. In area B, the general trend of variation of gravity anomaly is appeared to be high anomaly in northern part and decrease to the southern part. This is well matched with the prelandfill topography of the landfill site. The southern part of area B is located in the center of valley and its present surface is comparatively rugged, which may be due to the differential settlement of deep burried waste. The thickness of waste in area C is relatively thin, but the gravity anomaly appears to be low. Considering the present condition of surface, it can be inferred that low density wastes such as leftover food were mainly filled in this area. Area D, as in the case of area B, shows gravity anomaly that has close relation with the prelandfill topography. Magnetic data show the variation of total field intensity varies in the range of 46600~51000 nT, and reach maximum anomaly of 4400 nT. The overall pattern of magnetic anomaly well reflects the distribution of magnetic materials in the landfill. The result of VLF survey reveals several low resistivity zones, which may serve as underground passages for contaminant flow, in the area C located near the small Village.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.363-363
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• 2014

Ruthenium (Ru) has attractive material properties due to its promising characteristics such as a low resistivity ($7.1{\mu}{\Omega}{\cdot}cm$ in the bulk), a high work function of 4.7 eV, and feasibility for the dry etch process. These properties make Ru films appropriate for various applications in the state-of-art semiconductor device technologies. Thus, it has been widely investigated as an electrode for capacitor in the dynamic random access memory (DRAM), a metal gate for metal-oxide semiconductor field effect transistor (MOSFET), and a seed layer for Cu metallization. Due to the continuous shrinkage of microelectronic devices, better deposition processes for Ru thin films are critically required with excellent step coverages in high aspect ratio (AR) structures. In these respects, atomic layer deposition (ALD) is a viable solution for preparing Ru thin films because it enables atomic-scale control of the film thickness with excellent conformality. A recent investigation reported that the nucleation of ALD-Ru film was enhanced considerably by using a zero-valent metallorganic precursor, compared to the utilization of precursors with higher metal valences. In this study, we will present our research results on the synthesis and characterization of novel ruthenium complexes. The ruthenium compounds were easy synthesized by the reaction of ruthenium halide with appropriate organic ligands in protic solvent, and characterized by NMR, elemental analysis and thermogravimetric analysis. The molecular structures of the complexes were studied by single crystal diffraction. ALD of Ru film was demonstrated using the new Ru metallorganic precursor and O2 as the Ru source and reactant, respectively, at the deposition temperatures of $300-350^{\circ}C$. Self-limited reaction behavior was observed as increasing Ru precursor and O2 pulse time, suggesting that newly developed Ru precursor is applicable for ALD process. Detailed discussions on the chemical and structural properties of Ru thin films as well as its growth behavior using new Ru precursor will be also presented.

• The Journal of Engineering Geology
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• v.26 no.2
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• pp.207-221
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• 2016

As greater numbers of fill dams and reservoirs become old, the risks of damage or embankment collapse increases. However, few studies have considered the deterioration and hazard classification of the internal core layers of fill dams. This study reports the results of geotechnical investigations of 13 earth-cored fill dams in Korea, based on no-water borehole drilling, Standard Penetration Test, and 2D and 3D electrical resistivity surveys along with in situ and laboratory testing. High-capacity no-water boring minimized core layer disturbance while providing continuous core sample recovery. The results allow the classification of potential hazards related to the existing core layers based on both visual inspection of the recovered samples and the results of engineering surveys and tests. Four types of potential hazard are classified: locally fluidized core with a high water content, rapid water inflow to a borehole, cores with granular materials, and relatively low stiffness of core. Among these, the locally fluidized core is the most critical hazard that requires remedial action because it is related to the potential internal flow path and internal erosion. The other three hazard types are of medium importance and require careful monitoring and regular inspection. Of note, there was no correlation between age and core deterioration. The results are expected to aid the safe management and potential upgrading of aging cored fill dams.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.461-465
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• 2016

n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below $670^{\circ}C$ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of $5.99m{\Omega}cm^2$ was shown for the optimum firing temperature of $865^{\circ}C$. Over $900^{\circ}C$, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of $40.2mA/cm^2$, open-circuit voltage of 620 mV and convert efficiency of 19.11%.

• Journal of the Korean Magnetics Society
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• v.5 no.1
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• pp.8-14
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• 1995

The magnetic properties of an $Fe_{87}Zr_{7}B_{5}Ag_{1}$(at.%) amorphous alloy have been investigated as a function of annealing temperatures to clarify its application potential as a core material for high-frequency use by adding a small amount of insoluble element of Ag. A new excellent soft magnetic material was developed. The amorphous alloy produced by relatively low temperature annealing at $T_{a}=400^{\circ}C$ exhibited very high initial permeability$(\mu_{i})$ of 288,000 at 1kHz and 2mOe, very low coercivity$(H_{c})$ of 15mOe and low core loss$(W_{c})$ of 50W/kg at 100kHz and 1,000G which is comparable with Co-based amorphous alloys, respectively. It is notable that the values obtained in the present study are the best magnetic properties among various kinds of Fe-based soft amorphous materials reported up to date. The reasons for the achievement of good soft magnetic properties are presumably due to the homogeneous formation of very fine $\alpha$-Fe clusters with the size of 2~3nm in an amorphous matrix, which can be deduced from the increase of resistivity and the TEM observation. The very fine $\alpha$-Fe clusters embedded in an amorphous matrix had a great influence on reduction of magnetostriction and refinement of magnetic domain.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.155-160
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• 2013

ZnO thin films co-doped with Mg and Ga (MxGyZzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93) were prepared on glass substrates by RF magnetron sputtering with different sputtering powers ranging from 100W to 200W at a substrate temperature of $350^{\circ}C$. The effects of the sputtering power on the structural, morphological, electrical, and optical properties of MGZO thin films were investigated. The X-ray diffraction patterns showed that all the MGZO thin films were grown as a hexagonal wurtzite phase with the preferred orientation on the c-axis without secondary phases such as MgO, $Ga_2O_3$, or $ZnGa_2O_4$. The intensity of the diffraction peak from the (0002) plane of the MGZO thin films was enhanced as the sputtering power increased. The (0002) peak positions of the MGZO thin films was shifted toward, a high diffraction angle as the sputtering power increased. Cross-sectional field emission scanning electron microscopy images of the MGZO thin films showed that all of these films had a columnar structure and their thickness increased with an increase in the sputtering power. MGZO thin film deposited at the sputtering power of 200W showed the best electrical characteristics in terms of the carrier concentration ($4.71{\times}10^{20}cm^{-3}$), charge carrier mobility ($10.2cm^2V^{-1}s^{-1}$) and a minimum resistivity ($1.3{\times}10^{-3}{\Omega}cm$). A UV-visible spectroscopy assessment showed that the MGZO thin films had high transmittance of more than 80 % in the visible region and that the absorption edges of MGZO thin films were very sharp and shifted toward the higher wavelength side, from 270 nm to 340 nm, with an increase in the sputtering power. The band-gap energy of MGZO thin films was widened from 3.74 eV to 3.92 eV with the change in the sputtering power.

• Geophysics and Geophysical Exploration
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• v.9 no.2
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• pp.163-170
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• 2006

The shortage of proven hydrocarbon reserves has resulted in exploration progressing from the offshore into progressively deeper water of the continental shelf. Despite the success of seismic acquisition at ever greater depths, there are marine geological terrenes in which the interpretation of seismic data is difficult, such regions dominated by scattering or high reflectivity that is characteristic of carbonate reefs, volcanic cover and submarine permafrost. A marine controlled-source electromagnetic (CSEM) method has recently been applied to the oil and gas exploration thanks to its high-resistivity characteristics of the hydrocarbon. In particular, this method produces better results in terms of sensitivity under the deep water environment rather than the shallow water. Only in the last five years has the relevance of CSEM been recognized by oil companies who now use it to help them make exploration drilling decisions. Initial results are most promising and several contractors now offer magnetotelluric and CSEM services.