• Journal of the Korean Society for Nondestructive Testing
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• v.22 no.3
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• pp.275-283
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• 2002

To detect the position and depth of buried underground utilities, method of Ground Penetrating Radar(GPR) survey is the most commonly used. However, the skin-depth of GPR is very shallow, and in the places where subsurface materials are not homogeneous and are compose of clays and/or salts and gravels, GPR method has limitations in application and interpretation. The aim of this study is to overcome these limitations of GPR survey. For this purpose the site where the GPR survey is unsuccessful to detect the underground big pipes is selected, and soil tests were conducted to confirm the reason why GPR method was not applicable. Non-destructive high-frequency electromagnetic (HFEM) survey was newly developed and was applied in the study area to prove the effectiveness of this new technique. The frequency ranges $2kHz{\sim}4MHz$ and the skin depth is about 30m. The HFEM measures the electric field and magnetic field perpendicular to each other to get the impedance from which vertical electric resistivity distribution at the measured point can be deduced. By adopting the capacitive coupled electrodes, it can make the measuring time shorter, and can be applied to the places covered by asphalt an and/or concrete. In addition to the above mentioned advantages, noise due to high-voltage power line is much reduced by stacking the signals. As a result, the HFEM was successful in detecting the buried underground objects. Therefore this method is a promising new technique that can be applied in the lots of fields, such as geotechnical and archaeological surveys.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.14 no.2
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• pp.69-78
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• 1978

It is well known that the aluminizing steel is excellent in corrosion resistance and heat resistance. Therefore it has been used as boiler parts, heat exchanger parts and guide rails which are used under comparatively simple conditions. Recently, it has been noticed that aluminizing steel has high resistance to various atmosphere, high temperature oxidation and seawater resistance. So its usage has been extended widely to the production of parts such as intake and exhaust valve of internal combustion engine, turbine blade and pipelines On ships which required such properties. It is considered that aluminium coated steel is excellent in wear resistance because of high hardness on main ingredient FezAIs of Fe-AI alloy layer existed in diffusion coating layer. And it will beused as a new material taking wear resitance with seawater resistance in marine field. However it is difficult to findout any report concering the wear behaviors or properties of alum in izing steel. In this study the experiment was carried out under the condition of rolling-sliding contact using an Amsler-type wear testing machine at 0.80, 0.91, 1. 10, 1. 25% of slip ratio and 55.43, 78.38, 110.85 kg/mm^2 of Hertz's contact stress in run-in period for the purpose of service-ability test of aluminizing steel as a wear resisting material and obtaining the available design data. The followings are the obtained results from the experimen tal study; 1) The 2nd diffusion material has most excellent wear resistance. This material has brought out about 18% decrease of wear weight in a lower friction load level and 40~G decrease in a higher level comparing to the raw material. 2) Satisfactory effect of wear resistivity cannot be much expected in 2nd diffusion specimens. This is considered due to the formation of fine void in the alloy layer near the boundary to the aluminium layer. 3) Fracture on friction surface of aluminizing steel by the rolling-sliding contact is spalling, and spalling crack occurres initially beneath the specimen surface near the boundary in diffusion coating layer.

• Journal of Sensor Science and Technology
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• v.23 no.3
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• pp.185-191
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• 2014

The width of depletion region in a varactor diode can be modulated by varying a reverse bias voltage. Thus, the preferred characteristics of depletion capacitance can obtained by the change in the width of depletion region so that it can select only the desirable frequencies. In this paper, the TV tuner varactor diode fabricated by hyper-abrupt profile control technique is presented. This diode can be operated within 3.3 V of driving voltage with capability of UHF band tuning. To form the hyperabrupt profile, firstly, p+ high concentration shallow junction with $0.2{\mu}m$ of junction depth and $1E+20ions/cm^3$ of surface concentration was formed using $BF_2$ implantation source. Simulation results optimized important factors such as epitaxial thickness and dose quality, diffusion time of n+ layer. To form steep hyper-abrupt profile, Formed n+ profile implanted the $PH_3$ source at Si(100) n-type epitaxial layer that has resistivity of $1.4{\Omega}cm$ and thickness of $2.4{\mu}m$ using p+ high concentration Shallow junction. Aluminum containing to 1% of Si was used as a electrode metal. Area of electrode was $30,200{\mu}m^2$. The C-V and Q-V electric characteristics were investigated by using impedance Analyzer (HP4291B). By controlling of concentration profile by n+ dosage at p+ high concentration shallow junction, the device with maximum $L_F$ at -1.5 V and 21.5~3.47 pF at 0.3~3.3 V was fabricated. We got the appropriate device in driving voltage 3.3 V having hyper-abrupt junction that profile order (m factor) is about -3/2. The deviation of capacitance by hyper-abrupt junction with C0.3 V of initial capacitance is due to the deviation of thermal process, ion implantation and diffusion. The deviation of initial capacitance at 0.3 V can be reduced by control of thermal process tolerance using RTP on wafer.

• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.70-75
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• 2000

The recycled single crystal silicon wafers have been fabricated into solar cells. It can be a solution for the high cost in materials for solar cells and recycling of materials. So, p-type (100) single crystal silicon wafers with high resistivity of $10-14\;{\Omega}cm$ and the thickness of $650\;{\mu}m$ were used for the fabrication of solar cells. Optimistic conditions of formation of back surface field, surface texturing and anti-reflection coating were studied for getting high efficiency. In addition, thickness variation of solar cell was also studied for increase of efficiency. As a result, the solar cell with efficiency of 10% with a curve fill factor of 0.53 was fabricated with the wafers which have the area of $4\;cm^2$ and thickness of $300\;{\mu}m$. According to above results, recycling possibility of wasted wafers to single crystal silicon solar cells was confirmed.

• Journal of the Korean Chemical Society
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• v.36 no.1
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• pp.16-23
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• 1992

High $T_c$, superconductor $(Y_{1-x}Eu_x)Ba_2Cu_3O_{7-{\delta}}$ (x = 0.0, 0.2, 0.4, 0.6, 0.8, 1.0) were prepared and the physical properties were observed. XRD analysis showed that the structures of all the specimen were orthorhombic and the lattice parameters a, b and c increased with the increasing x value. Electrical resistivity and magnetization measurements revealed that pure high $T_c$, superconducting phases were formed at above 90 K. The critical temperatures increased with increasing the amount of Eu. From the measurement of magnetization and the size of the grains using SEM micrographs, volume diamagnetic susceptibilities for each specimen were calculated. These values decreased with the increasing x value. The composition of Ba in the lattice site decreased as the concentration of Eu increased, and this was confirmed by EPMA. It was found out that the volume diamagnetic susceptibility of each specimen was directly influenced by the composition of Ba in the lattice site.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.4
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• pp.127-134
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• 2015

Aluminum nitride (AlN) single crystals have attracted much attention for a next-generation semiconductor application because of wide bandgap (6.2 eV), high thermal conductivity ($285W/m{\cdot}K$), high electrical resistivity (${\geq}10^{14}{\Omega}{\cdot}cm$), and high mechanical strength. The bulk AlN single crystals or thin film templates have been mainly grown by PVT (sublimation) method, flux method, solution growth method, and hydride vapor phase epitaxy (HVPE) method. Since AlN suffers difficulty in commercialization due to the defects that occur during single crystal growth, crystalline quality improvement via defects analyses is necessary. Etch pit density (EPD) analysis showed that the growth misorientations and the defects in the AlN surface exist. Transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD) analyses were employed to investigate the overall crystalline quality and various kinds of defects. TEM studies show that the morphology of the AlN is clearly influenced by stacking fault, dislocation, second phase, etc. In addition EBSD analysis also showed that the zinc blende polymorph of AlN exists as a growth defects resulting in dislocation initiator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.546-546
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• 2008

Copper (Cu) Chemical mechanical polishing (CMP) has been an essential process for Cu wifing of DRAM and NAND flash memory beyond 45nm. Copper has been employed as ideal material for interconnect and metal line due to the low resistivity and high resistant to electro-migration. Damascene process is currently used in conjunction with CMP in the fabrication of multi-level copper interconnects for advanced logic and memory devices. Cu CMP involves removal of material by the combination of chemical and mechanical action. Chemicals in slurry aid in material removal by modifying the surface film while abrasion between the particles, pad, and the modified film facilitates mechanical removal. In our research, we emphasized on the role of chemical effect of slurry on Cu CMP, especially on the effect of amine functional group on removal rate selectivity between Cu and Tantalum-nitride (TaN) film. We investigated the two different kinds of complexing agent both with amine functional group. On the one hand, Polyacrylamide as a polymer affected the stability of abrasive, viscosity of slurry and the corrosion current of copper film especially at high concentration. At higher concentration, the aggregation of abrasive particles was suppressed by the steric effect of PAM, thus showed higher fraction of small particle distribution. It also showed a fluctuation behavior of the viscosity of slurry at high shear rate due to transformation of polymer chain. Also, because of forming thick passivation layer on the surface of Cu film, the diffusion of oxidant to the Cu surface was inhibited; therefore, the corrosion current with 0.7wt% PAM was smaller than that without PAM. the polishing rate of Cu film slightly increased up to 0.3wt%, then decreased with increasing of PAM concentration. On the contrary, the polishing rate of TaN film was strongly suppressed and saturated with increasing of PAM concentration at 0.3wt%. We also studied the electrostatic interaction between abrasive particle and Cu/TaN film with different PAM concentration. On the other hand, amino-methyl-propanol (AMP) as a single molecule does not affect the stability, rheological and corrosion behavior of the slurry as the polymer PAM. The polishing behavior of TaN film and selectivity with AMP appeared the similar trend to the slurry with PAM. The polishing behavior of Cu film with AMP, however, was quite different with that of PAM. We assume this difference was originated from different compactness of surface passivation layer on the Cu film under the same concentration due to the different molecular weight of PAM and AMP.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.2
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• pp.49-53
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• 2017

We study on the change of electrical properties of two-dimensional (2D) $SnSe_2$ materials with respect to Cl doping as $SnSe_{1.994}Cl_{0.006}$ under a high temperature condition. (300~450 K) By the simple solid-state reaction method, non-and Cl-doped 2D $SnSe_2$ materials are successfully synthesized with negligible impurities as confirmed by X-ray diffraction. From the temperature dependence of resistivity, it is observed that the conduction mechanism is changed from hopping to degenerate conduction with Cl doping. By Hall effect measurement, an increase on electron carrier concentration from ${\sim}7{\times}10^{16}$ to ${\sim}3{\times}10^{18}cm^{-3}$ with Cl doping verifies that Cl is an effective electron donor which results in the encouraged carrier concentration. Detailed analysis for temperature dependent Hall mobility reveals that the electrical transports in high temperature regime are governed by the grain boundary-controlled mechanism for non-doped $SnSe_2$, which is effectively suppressed by Cl-doping as entering metallic transport regime.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.429-429
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• 2007

For various applications of liquid crystal displays (LCDs), the uniform alignment of liquid crystal (LC) molecules on treated surfaces is significantly important. Generally, a rubbing method has been widely used to align the LC molecules on polyimide (PI) surfaces. Rubbed PI surfaces have suitable characteristics, such as uniform alignment. However, the rubbing method has some drawbacks, such as the generation of electrostatic charges and the creation of contaminating particles. Thus, we strongly recommend a non contact alignment technique for future generations of large high-resolution LCDs. Most recently, the LC aligning capabilities achieved by ultraviolet and ion-beam exposures which are non contact methods, on diamond-like carbon (DLC) inorganic thin film layers have been successfully studied because DLC thin films have a high mechanical hardness, a high electrical resistivity, optical transparency, and chemical inertness. In addition, nitrogen-doped DLC (NDLC) thin films exhibit properties similar to those of the DLC thin films and a higher thermal stability than the DLC thin films because C:N bonding in the NDLC thin filmsis stronger against thermal stress than C:H bonding in the DLC thin films. Our research group has already studied the NDLC thin films by an ion-beam alignment method. The $SiN_x$ thin films deposited by plasma-enhanced chemical vapor deposition are widely used as an insulation layer for a thin film transistor, which has characteristics similar to those of DLC inorganic thin films. Therefore, in this paper, we report on LC alignment effects and pretilt angle generation on a $SiN_x$, thin film treated by ion-beam irradiation for various N ratios

• Journal of the Korean Electrochemical Society
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• v.27 no.1
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• pp.40-46
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• 2024

Among the electrode manufacturing processes for lithium-ion batteries, the drying process is crucial for production speed and process cost. Particularly, as the loading level of the electrode increases to enhance the energy density of the battery, optimizing process conditions for electrode drying becomes more critical. In this study, we compared the drying time and electrochemical performance of the positive electrode prepared at different drying temperatures. LiNi_0.6Co_0.2Mn_0.2O₂ (NCM622) was used as the active material and manufactured under various drying temperature conditions ranging from 120 ℃ to 210 ℃ at loading levels of 2.5 and 4.5 mAh cm^-2. The physical and electrochemical properties of the electrodes were compared. As the loading level of the electrode increases, the drying time of the electrode also increases, but this time can be reduced by increasing the drying temperature. The drying temperature used in manufacturing the NCM622 positive electrode does not significantly affect the electrochemical performance but drying above 210 ℃ resulted in an increase in the volume resistivity of the electrode and a decrease in electrochemical performance. Accordingly, in the manufacture of high-loading electrodes, the drying temperature was increased to 190 ℃ to shorten the electrode manufacturing time without a loss of performance.