• Journal of Magnetics
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• 제3권4호
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• pp.99-104
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• 1998

The $ Sm_2Fe_{17}N_x $materials were prepared by the combination consisting of the HDDR (hydrogenation, disproportionation, desorption, and recombination) process and nitrogenation or by the conventional way consisting of nitrogenation only, and the magnetic and thermomagnetic properties of the materials were investigated. The magnetic characterisation of the prepared $ Sm_2Fe_{17}N_x $ materials was performed using a VSM. Thermal stability of the materials was evaluated using a DTA under Ar gas atmosphere. The thermomagnetic characteristics of the materials were examined using a Sucksmith-type balance. The previously HDDR-treated Sm2Fe17parent alloy was found to be nitrogenated more easily compared to the ordinary $ Sm_2Fe_{17}N_x $alloy. The $ Sm_2Fe_{17}N_x $ material produced by the combination method showed a high coercivity (12.9 kOe) even in the state of coarse particle size (around 60 ${\mu}{\textrm}{m}$). It was also revealed that the $ Sm_2Fe_{17}N_x $ material produced by the material produced by the combination showed an unusual TMA tracing featured with a low and constant magnetisation at lower temperature range and a peak just before the Curie temperature. This thermomagnetic characteristic was interpreted in terms of the competition between two counteracting effects; the decrease in magnetisation due to the thermal agitation at an elevated temperature and the increase in magnetisation resulting from the rotation of magnetisation of the fine grains comparable to a critical single domain size due to the decreased magnetocrystalline anisotropy at an elevated temperature.

• 한국분말재료학회지
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• 제9권6호
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• pp.381-393
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• 2002

Recent developments in nanocrystalline and nanocomposite rare earth-transition metal magnets are reviewed and emphasis is placed on research work at IFW Dresden. Principal synthesis methods include high energy ball milling, melt spinning, mold casting and hydrogen assisted methods such as reactive milling and hydrogenation-disproportionation-desorption-recombination. These techniques are applied to NdFeB-, PrFeB- and SmCo-type systems with the aim to produce high remanence magnets with high coercivity. Concepts of maximizing the energy density in nanostructured magnets by either inducing a texture via anisotropic HDDR or hot deformation or enhancing the remanence via magnetic exchange coupling are evaluated. With respect to high temperature applications melt spun $Sm(Co_{0.74}Fe_{0.1}Cu_{0.12}Zr_{0.04})_{7.5}$ ribbons were prepared, which showed coercivities of up to 0.53 T at 50$0^{\circ}C$. Partially amorphous $Nd_{60}Fe_xCo_{30-x}Al_{10}(0{\leq}x{\leq}30)$ alloys were prepared by copper mold casting. The effect of transition metal content on the glass-forming ability and the magnetic properties was investigated. The $Nd_{60}Co_{30}Al_{10}$ alloy exhibits an amorphous structure shown by the corresponding diffraction pattern. A small substitution of Co by 2.5 at.% Fe results In the formation of Fe-rich crystallites embedded in the Nd-rich amorphous matrix. The Fe-rich crystallites show hard magnetic behaviour at room temperature with a coercivity value of about 0.4 T, relatively low saturation magnetization and a Curie temperature of 500 K.

• E2M - 전기 전자와 첨단 소재
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• 제9권3호
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• pp.251-258
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• 1996

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

• Journal of Magnetics
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• 제11권1호
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• pp.8-11
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• 2006

Recently half-metallic full-Heusler alloy films have attracted significant interests for spintronics devices. As these alloys have been known to have a high spin polarization, very large TMR ratio is expected in magnetic tunnel junctions. Among these alloys, $Co_2MnSi$ full-Heusler alloy with a high spin polarization and a high Curie temperature is considered a good candidate as an electrode material for spintronic devices. In this study, the magnetic and structural properties of $Co_2MnSi$ Heusler alloy films were investigated. TMR characteristics of magnetic tunnel junctions with a $Co_2MnSi/SiO_2/CoFe$ structure were studied. A maximum MR ratio of 39% with $SiO_2$ substrates and 27% with MgO(100) substrates were obtained. The lower MR ratio than expectation is considered due to off-stoichiometry and atomic disorder of $Co_2MnSi$ electrode together with oxidation of the electrode layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.331-332
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• 2008

Couplings between electric, magnetic, and structural order parameters result in the so-called multiferroic phenomena with two or more ferroic phenomena such as ferroelectricity, ferromagnetism, or ferroelasticity. The simultaneous ferroelectricity and ferromagnetism (magnetoelectricity) permits potential applications in information storage, spintronics, and magnetic or electric field sensors. The perovskite BiFeO3(BFO) is known to be antiferromagnetic below the Neel temperature of 647K and ferroelectric with a high Curie temperature of 1043K. It exhibits weak magnetism at room temperature due to the residual moment from a canted spin structure. It is likely that non-stoichiometry and second-phase formation are the factors responsible for leakage current in BFO. It has been suggested that oxygen non-stoichiometry leads to valence fluctuations of Fe ions in BFO, resulting in high conductivity. To reduce the large leakage current of BFO, one attempt is to make donor-doped BFO compounds and thin films. In this study, (Bi1-x,Ndx)(Fe1-y,Tiy)O3 thin films have been deposited on Pt(111)/TiO2/SiO2/Si substrates by pulsed laser deposition. The effect of dopants on the phase evolution and surface morphology are analyzed. Furthermore, electrical and magnetic properties are measured and their coupling characteristics are discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권4호
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• pp.312-317
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• 2004

High dose ($3{\times}10^{16}cm^{-2}$) implantation of Fe or Ni ions into bulk, single-crystal ZnO substrates was carried out at substrate temperature of ${\sim}350^{\circ}C$ to avoid amorphization of the implanted region. The samples were subsequently annealed at $700^{\circ}C$ to repair some of the residual implant damage. X-Ray Diffraction did not show any evidence of secondary phase formation in the ZnO. The Ni implanted samples remained paramagnetic but the Fe-implanted ZnO showed evidence of ferromagnetism with an approximate Curie temperature of ${\sim}$240K. Preliminary X-Ray Photoelectron Spectroscopy measurements showed the Fe to be ill the 2+ oxidation state. The earrler density in the implanted region still appears to be too low to support carrier-meditated origin of the ferromagnetism and formation of bound magnetic polarons may be one potential explanation for the observed magnetic properties, No evidence of the Anomalous Hall Effect could be found in the Fe-implanted ZnO, but its transport properties were dominated by the conventional or ordinary Hall effect.

• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.64-67
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• 2013

$Fe_3O_4$(magnetite) having half metallic property attracts great attention material with high curie temperature in spintronics. $Fe_3O_4$ thin films and nanowires were grown onto c-$Al_2O_3$(0001) at various substrate temperatures. $Fe_3O_4$ films deposited from 300 to $600^{\circ}C$ are influenced by thermal stress induced from mismatch of thermal expansion coefficient between $Fe_3O_4$ and $Al_2O_3$ (0001) substrate. The $Fe_3O_4$ nanowires grown at $640^{\circ}C$ showed a diameter of 130 nm and a length of $2-10{\mu}m$. The nanowire arrays fabricated by pulsed laser deposition technique have high coercivity($H_c$) of 608 Oe and Squareness($M_r/M_s$) of 0.68 in perpendicular direction.

• E2M - 전기 전자와 첨단 소재
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• 제10권7호
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• pp.674-681
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• 1997

Ternary compound ceramics, (1-y-x) BaTiO$_3$-y SrTiO$_3$-x MgTiO$_3$(0.00 x 0.20), were fabricated by the conventional ceramic process. The structural and dielectric properties of specimens were investigated while varying the composition and sintering temperature(1,200~1,45$0^{\circ}C$) in order to obtain the optimum condition of capacitor. As is well known, Curie temperature(T$_{c}$) of high dielectric-based ceramic(BaTiO$_3$) was shifted and temperature of capacitance was decreased in according to increase of solid solution with (Sr, Mg)TiO$_3$. As a result, a suitable condition of compound rate for capacitor was obtained such as the BSM-11(0.8BaTiO$_3$-0.1SrTiO$_3$-0.1MgTiO$_3$), and sintering temperature was sintered at 1,25$0^{\circ}C$ for two hours. In this case, dielectric constant<1,300, dielectric loss(tan$\delta$)<0.03, and the variation rate of capacitance had less than 3% in the range -10~7$0^{\circ}C$.>.

• 한국전기전자재료학회논문지
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• 제25권9호
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• pp.692-701
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• 2012

Recently, many lead-free piezoelectric materials have been investigated for the replacement of existing Pb-based piezoelectric ceramics because of globally increasing environmental interest. There has been remarkable improvement in piezoelectric properties of some lead-free ceramics such as $(Bi,Na)TiO_3-(Bi,K)TiO_3-BaTiO_3$, $(Na,K)NbO_3-LiSbO_3$, and so on. However, no one still has comparable piezoelectric properties to lead-based materials. Therefore, new lead-free piezoelectric ceramics are required. $BiFeO_3$ has a rhombohedrally distorted perovskite structure at room temperature and a very high Curie temperature ($T_C$= 1,100 K). And a very large electric polarization of 50 ~ 60 ${\mu}C/cm^2$ has been reported both in epitaxial thin film and single crystal $BiFeO_3$. Therefore, a high piezoelectric effect is expected also in a $BiFeO_3$ ceramics. The recent research activities on $BiFeO_3$ or $BiFeO_3$-based solid solutions are reviewed in this article.

• Transactions on Electrical and Electronic Materials
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• 제3권3호
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• pp.25-28
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• 2002

In this study, microstructural, dielectric and electrical properties of (Pb$\sub$0.83/) (La$\sub$0.2/Ce$\sub$0.8/)$\sub$0.08/TiO$_3$(PCT) ceramics as a function of MnO$_2$ addition and electrode size variation were investigated for 30 MHz high frequency ceramic resonator application. Grain size was gradually increased according to the increase of MnO$_2$ addition amount. Moreover, the density showed a constant value with increasing MnO$_2$ addition amount. Dielectric constant was decreased with increasing MnO$_2$ addition amount. Curie temperature of all the composition ceramics was nearly constant around 330$^{\circ}C$. The maximum D.R.of 50.5 dB and maximum Q$\sub$mt3/ of 1842 in the 3$\^$rd/ overtone vibration mode were appeared at the composition of 0.3wt% MnO$_2$, respectively.