• Title/Summary/Keyword: HfN

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Fabrication of Nanocrystalline FeCoTaN Magnetic Films Having High Saturation Magnetization and Excellent High Frequency Characteristics (고 포화 자화 및 우수한 고주파 특성을 가진 나노결정 FeCoTaN 박막의 제조)

  • J. M. Shin;Kim, J.;Kim, Y. M.;S. H. Han;Kim, H. J.
    • Proceedings of the Korean Magnestics Society Conference
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    • 2002.12a
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    • pp.214-215
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    • 2002
  • High saturation magnetization (B$\_$s/) and excellent high frequency characteristics of magnetic thin films has been recognized as the most important requirement for further miniaturization and higher frequency operation in magnetic devices, such as magnetic heads and magnetic sensors. Up to now, Fe-X-N (X =Ti, Hf, and Al etc.) films with B$\_$s/ of 15 ∼ 19 kG and coercivity (H$\_$c/) of 0.5 ∼ 5.0 Oe have been successfully fabricated and proven to satisfy various requirements as a potential candidate for thin film head materials. (omitted)

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A Study on the Fast QR RLS Algorithm for Applications to Adaptive Signal Processing (적응 신호 처리에의 응용을 위한 고속 QR RLS 알고리즘의 연구)

  • 정지영
    • Proceedings of the Acoustical Society of Korea Conference
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    • 1991.06a
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    • pp.38-41
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    • 1991
  • RLS algorithms are required for applications to adaptive line enhancers, adaptive equalizers for voiceband telephone and HF modems, and wide-badn digital spectrum mobile raio in which their convergence time and tracking speed are significant. The fast QR RLS algorithm satisfies above the requirements. Its computational complexity is linearly proportional to the tap number of a filter, N and its performance remains numerically stable. From the result of simumulation, the fast QR RLS algorithm represented Cioffi is better than gradient based algorithm in its initial performance when being applied to an adaptive line enhancer for cancelling noise.

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기판인가전압에 따른 HfN 박막의 결정화 변화

  • Lee, Jin-Hui;Park, Hwan-Jin;Ju, Dae-Hyeon;Choe, Jong-In;Park, Ji-Hye;Cheon, Hui-Gon
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2007.11a
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    • pp.43-44
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    • 2007
  • 역전파 신경망은 반도체 공정 모델링에 효과적으로 응용되고 있으며, 모델의 예측정확도를 향상시키기 위하여 Random Generator를 개발하였다. Random Generator의 효과가 기존의 모델에 비해 예측정확도의 향상에 영향을 주었음을 알 수 있었다. 모델링에 이용한 실험데이터는 다중 유도결합형 플라즈마 장비를 이용하여 수집하였다.

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Quality Characteristics and Antioxidant Activity of Prickly Pear Cactus Cladodes (손바닥 선인장 엽상경의 품질 특성과 항산화 효과)

  • Hwang, Joon-Ho;Yi, Mi-Ran;Kim, Jae-Won;Bu, Hee-Jung;Kang, Chang-Hee;Lim, Sang-Bin
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.44 no.3
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    • pp.356-362
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    • 2015
  • Prickly pear cactus cladodes were extracted with hot water and 70% ethanol, followed by fractionation with n-hexane (HF), ethyl acetate (EF), n-butanol (BF), and distilled water. Total phenolics and total flavonoid contents as well as antioxidative and anti-inflammatory activities were then measured. Total phenolic contents were 784, 452, and 220 mg gallic acid equivalents (GAE)/g, whereas total flavonoid contents were 214, 76, and 113 mg quercetin equivalents (QE)/g in EF, BF, and HF, respectively. DPPH and ABTS radical scavenging activities ($IC_{50}$) were 103 and $105{\mu}g/mL$ in EF, 359 and $379{\mu}g/mL$ in BF, and 469 and $605{\mu}g/mL$ in HF, respectively. Oxygen radical absorbance capacity was highest at $391{\mu}M$ TE in EF (in decreasing order of $117{\mu}M$ TE in BF and $64{\mu}M$ TE in HF), whereas superoxide anion radical scavenging activity ($IC_{50}$) was highest at $40{\mu}g/mL$ in EF (in decreasing order of $69{\mu}g/mL$ in BF and $98{\mu}g/mL$ in 70% ethanol extract). Inhibitory activity ($IC_{50}$) of nitric oxide (NO) production induced by LPS-activated RAW264.7 cells was highest at $62{\mu}g/mL$ in HF (in decreasing order of $104{\mu}g/mL$ in EF and $465{\mu}g/mL$ in BF). The selectivity index (ratio of inhibitory activity of NO production to cell cytotoxicity) was highest at 4.63 in EF (in decreasing order of 3.37 in HF and 2.14 in BF). In conclusion, EF showed potent antioxidant and anti-inflammatory effects with high phenolic and flavonoid contents.

Clinical Study of Heart Rate Variability on Patients with Idiopathic Parkinson's Disease according to Clinical Scale(Hoehn-Yahr stage, UPDRS) (특발성 파킨슨병 환자의 임상척도에 따른 심박변이도의 변화에 대한 연구)

  • Park, Sang-min;Lee, Sang-hoon;Jung, Ji-cheol;Kim, Kun-hyung;Park, Hi-joon;Lim, Sabina;Chang, Dae-il;Lee, Yun-ho
    • Journal of Acupuncture Research
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    • v.22 no.3
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    • pp.137-144
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    • 2005
  • Objective : This study was designed to assess the heart rate variablitv of patients with Parkinson's disease according to Hoehn-Yahr stage. Methods : Subjects were voluntarily recruited by newspapers and internet. All the subjects are confirmed as idiopathic parkinson's disease by a neurologist. The patients were grouped by Hoehn-Yahr(H-Y) stage. Heart rate variability was measured for 5 minutes after 5 minutes' bed rest. Subjects were comprised of 3 groups which were H-Y stage I (n=14), H-Y stage H(n=9), H-Y stage III(n=7). We compared the heart rate variability of each groups by one-way ANOVA test. We also studied the relationship between UPDRS score and Heat rate variability components (SDNN, RMS-SD and TP) by pearson correlation analysis and simple linear regressin analysis Results: Age, duration was matched among groups. SDNN, RMS-SD, TP were significantly decreased as H-Y stage increased(p<0.05). Especially there was significant difference between H-Y stage I and III group(p<0.05). But other components(Heart rate, LF, HF, LF/HF ratio) were not showed significant difference. SDNN, RMS-SD and TP were significantly decreased as UPDRS scores increase(p<0.05). Conclusion : This study suggests that the function of the autonomic nervous system decreases as Parkinson`s disease progresses.

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The Investigation of Microwave irradiation on Solution-process amorphous Si-In-Zn-O TFT

  • Hwang, Se-Yeon;Kim, Do-Hun;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.205-205
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    • 2015
  • 최근, 비정질 산화물 반도체를 이용한 TFT는 투명성, 유연성, 저비용, 저온공정이 가능하기 때문에 차세대 flat-panel 디스플레이의 back-plane TFT로써 다양한 방면에서 연구되고 있다. 산화물 반도체 In-Zn-O-시스템에서는 Gallium (Ga)을 suppressor로 사용한 a-In-Ga-Zn-O (a-IGZO) 뿐만 아니라, Magnesium (Mg), Hafnium (Hf), Tin (Sn), Zirconium (Zr) 등의 다양한 물질이 연구되었다. 그 중 Silicon (Si)은 Ga, Hf, Sn, Zr, Mg과 같은 suppressor에 비해 구하기 쉬우며 가격적인 측면에서도 저렴하다는 장점이 있다. solution 공정으로 제작한 산화물 반도체 TFT는 진공 시스템을 사용한 공정보다 공정시간이 짧고, 저비용, 대면적화가 가능하다는 장점이 있다. 하지만, 투명하고 유연한 device를 제작하기 위해서는 저온 공정과 low thermal budget은 필수적이다. 이러한 측면에서 MWI (Microwave Irradiation)는 저온공정이 가능하며, 짧은 공정 시간에도 불구하고 IZO 시스템의 산화물 반도체의 전기적 특성 향상을 기대할 수 있는 효율 적인 열처리 방법이다. 본 연구에서는 In-Zn-O 시스템의 TFT에서 silicon (Si)를 Suppressor로 사용한 a-Si-In-Zn-O (SIZO) TFT를 제작하여 두 가지 열처리 방법을 사용하여 TFT의 전기적 특성을 확인하였다. 첫 번째 방법은 Box Furnace를 사용하여 N2 분위기에서 $600^{\circ}C$의 온도로 30분간 열처리 하였으며, 두 번째는 MWI를 사용하여 1800 W 출력 (약 $100^{\circ}C$)에 2분간 열처리 하였다. MWI 열처리는 Box Furnace 열처리에 비해 저온 공정 및 짧은 시간에도 불구하고 향상된 전기적 특성을 확인 할 수 있었다.

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Enhancement of nonvolatile memory of performance using CRESTED tunneling barrier and high-k charge trap/bloking oxide layers (Engineered tunnel barrier가 적용되고 전화포획층으로 $HfO_2$를 가진 비휘발성 메모리 소자의 특성 향상)

  • Park, Goon-Ho;You, Hee-Wook;Oh, Se-Man;Kim, Min-Soo;Jung, Jong-Wan;Lee, Young-Hie;Chung, Hong-Bay;Cho, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.415-416
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    • 2009
  • The tunnel barrier engineered charge trap flash (TBE-CTF) non-volatile memory using CRESTED tunneling barrier was fabricated by stacking thin $Si_3N_4$ and $SiO_2$ dielectric layers. Moreover, high-k based $HfO_2$ charge trap layer and $Al_2O_3$ blocking layer were used for further improvement of the NVM (non-volatile memory) performances. The programming/erasing speed, endurance and data retention of TBE-CTF memory was evaluated.

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Nitro oxide in human cytomegalovirus replication and gene expression

  • Lee, Jee-Yeon;Lee, Chan-Hee
    • Journal of Microbiology
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    • v.35 no.2
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    • pp.152-157
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    • 1997
  • Infection of human fibroblast (HF) cells with human cytomegalovirus (HCMV) result in changes in the intracellular level of second messengers. Since nitric oxide (NO) production has been known to be related with other second messengers, it is probable that HCMV infection of HF cells may involve NO. To test this possibility, the amount of NO was measured following ogenous addition of NO generators such as sodium nitroprusside (SNP) or S-nitroso-N-a-cetylpenicillamine (SNAP) immediately after HCMV infection, however, inhibited virus multiplication. Furthermore, immunoblot experiment using monoclonal antibody to HCMV major immediate early (MIE) proteins or CAT assay using pCMVIE/CAT (plasmid containing CAT gene driven by HCMV MIE promoter) revealed that SNP or SNAP blocked the MIE gene expression. SNP was more effective than SNAP in hibiting HCMV multiplication or MIE gene expression. SNP produced more NO than SNAP in inhibiting HCMV multiplication or MIE gene expression. SNP produced more NO than SNAP. Although the mechanism for the inhibition of HCMV multiplication and MIE gene expression by NO is still elusive some correlation with NO-mediated inhibition of HCMV-induced increase in cytosolic free Ca$\^$2+/ concentration ([Ca$\^$2+/]) was observed. The increase of [Ca$\^$2+/] following HCMV infection was inhibited by SNP, and less effectively by SNAP. Raising [Ca$\^$2+/ with bromo-A23187 partially reversed the SNP block of MIE gene expression. Thus, there appear to e some relationships among NO. [Ca$\^$2+/], and HCMV MIE gene expression.

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Effect of processing Conditions on $3,400cm^{-1}$ -OH Peak in IR Transmitting Heavy Metal Fluoride Glasses (적외선 투과성 플루오르화 중금속 유리의 $3,400cm^{-1}$ -OH 흡수에 미치는 가공조건의 영향)

  • ;C. T Moynihan
    • Journal of the Korean Ceramic Society
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    • v.21 no.3
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    • pp.231-238
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    • 1984
  • Heavy metal fluoride glasses exhibit considerable promise as high transparency materials from the UV to the IR. These glasses are prepared by fusion of the mixture of metal fulorides($ZrF_4$, $BaF_2$, $LaF_3$ etc) at 800-1, 00$0^{\circ}C$ under the inert$(N_2)$ or reactive ($CCl_4$, $Cl_2$) atmosphere following the casting into glass on cooling. Infrared absorption at the 3, 400 cm-1 -OH peak has been measured as a function of thickness for several ZrF-$BaF_2$-LaF and $HfF_4$-$BaF_2$-$LaF_3$ glasses to separate contributions from bulk and surface -OH. For glasses melted under $CCl_4$ reactive atmosphere the peak is due almost entirely to surface-OH. and melting in a closed reactor was best for removing -OH. In ambient atmosphere the -OH peak exhibited no time dependence over a 30 d period indicating a very small rate of surface attack by atmospheric H2O. Removal of -OH absorption processing was generally easier and more complete for the $BaF_2$/ThF4-glasses than for the $ZrF_4$-or $HfF_4$-based glasses.

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Electrical characteristics of high-k stack layered tunnel barriers with Post-Rapid thermal Annealing (PRA) for nonvolatile memory application

  • Hwang, Yeong-Hyeon;Yu, Hui-Uk;Son, Jeong-U;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.186-186
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    • 2010
  • 소자의 축소화에 따라 floating gate 형의 flash 메모리 소자는 얇은 게이트 절연막 등의 이유로, 이웃 셀 간의 커플링 및 게이트 누설 전류와 같은 문제점을 지니고 있다. 이러한 문제점을 극복하기 위해 charge trap flash 메모리 (CTF) 소자가 연구되고 있지만, CTF 메모리 소자는 쓰기/지우기 속도와 데이터 보존 성능간의 trade-off 관계와 같은 문제점을 지니고 있다. 최근, 이를 극복하기 위한 방안으로, 다른 유전율을 갖는 유전체들을 적층시킨 터널 절연막을 이용한 Tunnel Barrier Engineered (TBE) 기술이 주목 받고 있다. 따라서, 본 논문에서는 TBE 기술을 적용한 MIS-capacitor를 높은 유전율을 가지는 Al2O3와 HfO2를 이용하여 제작하였다. 이를 위해 먼저 Si 기판 위에 Al2O3 /HfO2 /Al2O3 (AHA)를 Atomic Layer Deposition (ALD) 방법으로 약 2/1/3 nm의 두께를 가지도록 증착 하였고, Aluminum을 150 nm 증착 하여 게이트 전극으로 이용하였다. Capacitance-Voltage와 Current-Voltage 특성을 측정, 분석함으로써, AHA 구조를 가지는 터널 절연막의 전기적인 특성을 확인 하였다. 또한, high-k 물질을 이용한 터널 절연막을 급속 열처리 공정 (Rapid Thermal Annealing-RTA) 과 H2/N2분위기에서 후속열처리 공정 (Post-RTA)을 통하여 전기적인 특성을 개선 시켰다. 적층된 터널 절연막은 열처리를 통해 터널링 전류의 민감도의 향상과 함께 누설전류가 감소됨으로서 우수한 전기적인 특성이 나타남을 확인하였으며, 적층된 터널 절연막 구조와 적절한 열처리를 이용하여 빠른 쓰기/지우기 속도와 전기적인 특성이 향상된 비휘발성 메모리 소자를 기대할 수 있다.

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