• Title/Summary/Keyword: Hexagonal hall

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Alignment and lattice quality of hexagonal rings of hexagonal BN films synthesized by ion beam assisted deposition (이온빔보조증착법으로 합성한 hexagonal BN막의 hexagonal ring의 배열과 결정성)

  • 박영준;한준희;이정용;백영준
    • Journal of the Korean Vacuum Society
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    • v.8 no.1
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    • pp.43-50
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    • 1999
  • We have studied the alignment and the lattice quality of hexagonal rings of h-BN films synthesized by ion beam assisted deposition (IBAD) method. Boron was e-beam evaporated at 1.5 $\AA$/sec and nitrogen gas was ionized using end-hall type ion gun at 60, 80, and 100 eV, respectively. Substrate was either not heated or heated at 200, 400, 500, and $800^{\circ}C$, respectively. As nitrogen ion energy increases, c-axes of hexagonal rings tend to align parallel to the substrate, which is explained by larger compressive stress at higher ion energies. Alignment of c-axis increases with temperature and shows maximum around $400^{\circ}C$. The lattice quality of hexagonal rings improves with temperature. Such behaviors can be understood from two counter trends of increasing the atomic mobility and decreasing compressive stress with temperature. Hardness of h-BN films shows the same trend with the alignment of c-axis. Ion beam assisted deposition method seems to be effective for aligning hexagonal rings and optimizing h-BN properties.

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A Study on the Architectural Transformation of the Hall of Bhaisajyaguru(Healing) Budda(藥師殿) in Chung Yang Temple(正陽寺) -from the main source of the travelogues on Mt. Kumgang. - (정양사(正陽寺) 약사전의 건축사적 변천 - 금강산 기행문을 중심으로 -)

  • Kang, Pyonghee
    • Journal of architectural history
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    • v.12 no.3
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    • pp.163-179
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    • 2003
  • The records of about 60 travel essays of the Hall of Bhaisajyaguru(Healing) Budda which was built in Chung Yang Temple passed down since 1525. The chronological change of that Hall architecture according to each period was traced upon. The building structure of the Hall of Bhaisajyaguru Budda which has a roundabout way, and 6 pillars inside, sometimes each 6 pillars inside and outside is hexagonal, one story building in Japanese colonial period(picture 3-1) or the present(picture 3-3). The panaromic picture of Chung Yang Temple shows no alterations of the layout of buildings(picture 1-1), in which the Hall of $Praj{\tilde{n}}{\bar{a}}$(般若殿), the main building in the center and the Hall of Bhaisajyaguru(Healing) Budda, three story stone pagoda, stone lighthouse in front of it became the central axis. The Hall of Bhaisajyaguru(Healing) Budda remained as it was until Japanese invasions in 1592 and 1597. However, it was greatly damaged by the flood in 1717. It was newly built by Lee Ha Gon's leading in 1717-1732. At that time, the interior design was changed. With Bhaisajyaguru(Healing) Budda, 53 Buddhas and ${\acute{S}}arira$ of Stone stupa which show itself by the flood in 1717 was located in the image of the Mountain of Chunchuk or Cheontae like Yu Jeom Temple. The doors of this Hall are located in the front and back. In the four walls each, two realistic and cubic buddhism pictures were drawn, The color of those picture was partly taken off in 1671 and repainted in 1714. The new building in 1717-1732 regained its colorful appearance. However, the names written beside each Images of Buddha disappeared. The notable remark in these records is that some of these travel essays in 17th-18th centuries was calling this hexagonal hall as the octagonal one. It is very important records because it means that before 1525 the octagonal hall might have existed. Chung Yang Temple was rebuilt between 1976 and 1985 after the destruction in the Korean War. After the records are carefully read, the full scale excavation about this historic site was not done yet. The interesting issue of the existence of octagonal building will be resolved by the full scale excavation.

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Effects of Grain Size Distribution on the Mechanical Properties of Polycrystalline Graphene

  • Park, Youngho;Hyun, Sangil
    • Journal of the Korean Ceramic Society
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    • v.54 no.6
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    • pp.506-510
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    • 2017
  • One of the characteristics of polycrystalline graphene that determines its material properties is grain size. Mechanical properties such as Young's modulus, yield strain and tensile strength depend on the grain size and show a reverse Hall-Petch effect at small grain size limit for some properties under certain conditions. While there is agreement on the grain size effect for Young's modulus and yield strain, certain MD simulations have led to disagreement for tensile strength. Song et al. showed a decreasing behavior for tensile strength, that is, a pseudo Hall-Petch effect for the small grain size domain up to 5 nm. On the other hand, Sha et al. showed an increasing behavior, a reverse Hall-Petch effect, for grain size domain up to 10 nm. Mortazavi et al. also showed results similar to those of Sha et al. We suspect that the main difference of these two inconsistent results is due to the different modeling. The modeling of polycrystalline graphene with regular size and (hexagonal) shape shows the pseudo Hall-Petch effect, while the modeling with random size and shape shows the reverse Hall-Petch effect. Therefore, this study is conducted to confirm that different modeling is the main reason for the different behavior of tensile strength of the polycrystalline structures. We conducted MD simulations with models derived from the Voronoi tessellation for two types of grain size distributions. One type is grains of relatively similar sizes; the other is grains of random sizes. We found that the pseudo Hall-Petch effect and the reverse Hall-Petch effect of tensile strength were consistently shown for the two different models. We suspect that this result comes from the different crack paths, which are related to the grain patterns in the models.

Characteristics of Physical and Adsorption of Korean Traditional Charcoal (우리나라 전통 숯의 물리.화학적 특성)

  • Kim, Joon-Tae;Kim, Sun-Hwa;Kim, Hae-Jin
    • Journal of environmental and Sanitary engineering
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    • v.21 no.4 s.62
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    • pp.77-86
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    • 2006
  • The water purification was very important in Korea which has not sufficient water resource and while adsorption method among the various methods to eliminate the water pollutants has been widely used by activated carbon. This study was conducted the basic experiment for hall distribution, pH, conductivity, electronic microscope, cation exchange and inorganic materials the adsorption capacity of Korean traditional charcoal which has similar characteristics to activated carbon of organic pollutants. As a result of observing Korean traditional charcoal with electronic microscope, it was found that it has porous structure, oak charcoal has circular structure, pine charcoal has square structure and bamboo charcoal has hexagonal structure, which has high void fraction per unit area because of its thin cell wall structure. As a result of experimenting hall distribution, hall distribution of bamboo high temperature charcoal is high as 0.269cc/g and has the greatest inorganic contents and cation exchange capacity(CEC) which are the important factor of chemical adsorption.

Crystal Growth Sensor Development of II-VI Compound Semiconductor : CdS (II-VI족 화합물 반도체의 결정성장 및 센서 개발에 관한 연구)

  • D.I. Yang;Y.J. Shin;S.Y. Lim;Y.D. Choi
    • Journal of the Korean Vacuum Society
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    • v.1 no.1
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    • pp.126-133
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    • 1992
  • This study deals with the crystal growth and the optical characteristics of CdS thin films activatedby silver. CdS:Ag thin films were deposited by using an electron beam evaporation(EBE) technique in vacuumof 1.5X 10-'torr, voltage of 4 kV, current of 2.5 mA and substrate temperature of 250$^{\circ}$C CdS:Ag photoconductivefilms prepared by EBE method show high photoconductivity after annealing at about 550"c for 0.5 h in air andAr gas.The grain size of CdS:Ag thin films annealed in Ar atmosphere (1 atm) was grown over 1 ym and the thicknessof the films is 4-5 pm. The analysis of X-ray diffraction patterns shows that the crystal structures are hexagonal.The diffraction line by (00.2) plane can only be observed, indicating that c-axis of hexagonal grows preferentiallyperpendicular to the substrate. The profiles of photoluminescence spectra of CdS:Ag films show Gaussian typecurves at room temperature, the maximum peak spectral sensitivity of CdS:Ag is located at the wavelength of520 nm.We annealed CdS:Ag thin films in air and Ar vapor in order to make the CdS photoconductors having theintensive photocurrent, the broad distribution of the photocurrent spectrum and the large value of the ratioof the photocurrent (pc) to the dark current(dc). We found that CdS:Ag thin films annealed in air atmospherewas the best one.air atmosphere was the best one.

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Electrical and Optical Properties of Vacuum-Evaporated CdS Films for the Window Layer of $CdS/CuInSe_2$ Solar Cells. ($CdS/CuInSe_2$태양전지의 Window Layer로 쓰이는 CdS박막의 진공증착법에 따른 전기적.광학적 성질)

  • Nam, Hee-Dong;Lee, Byung-Ha;Park, Sung
    • Korean Journal of Crystallography
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    • v.8 no.2
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    • pp.105-110
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    • 1997
  • 1μm-CdS films for a window layer of CdS/CuInSe2 solar cell have been prepared by vacuum of 1x10-3 mTorr. Source and substrate temperature ranges were used 800-1100'C and 50-200℃ respectively. Structural, electircal and optical properties of CdS films have been investigated by X-ray diffractometer (XRD), scanning electron microscopy (SSEM), electrical resistivity, the Hall measurement and optical transmission spectra. Electrical resistivity and optical transmission of the CdS films decreased with the increase in CdS source temperature without substrate heating. All the films had hexagonal structure and strong texture with (002) orientation of grain normal to the substrate glass. CdS films evaporated at 1000℃ were the highest electrical conductivity of 0.9(S/cm). Electrical resistivity and optical transmission at the substrate temperature of 100℃ were 40(Ω,cm) and 80% respectively.

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Growth and characterites for CdSe single crystal grown by using sublimation method (승화법에 의한 CdSe 성장과 특성)

  • Hong, Kwang-Joon;Baek, Seung-Nam;Hong, Myung-Suk;Kim, Do-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.180-181
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    • 2006
  • CdSe single crystal was grown by sublimation method in the two-step vertical electric furnace. This CdSe single crustal had hexagonal structure whose lattice constants of $a_0$ and $c_0$ were measured $4.299\;{\AA}$ and $7.009\;{\AA}$ by extrapolation method, respectively. CdSe single crystal was n-type semiconductor values were measured from Hall data by Van der Pauw method in the room temperature. Mobility tends to increase in proportion to $T^{3/2}$ from 33K to 130K due to impurity scattering. but mobility tends to decrease in proprtion to $T^{-3/2}$ from 130K to 293K due to lattice scattering. CdSe thin film was made by electron beam evaporation technique had also hexagonal structure. The grain size of this thin film was grown to $1{\mu}m$ as a result of annealing in the vapor of Ar or Cd. Annealde CdSe thin film was n-type semiconductor whose carrier density had about $7{\times}10^{12}cm^{-3}$ and its mobility had about $1.6{\times}10^3cm^2/V$ sec at room temperature.

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Photosensor of properties for CdSe thin film grown by Chemical Bath Deposition Method (Chemical Bath Deposition 방법으로 CdSe 박막 성장과 광센서 특성)

  • Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.04b
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    • pp.1-4
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    • 2004
  • Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition(CBD)method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_2$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_0$ and $c_0$ were $4.302{\AA}$ and 7.014 ${\AA}$, respectively. Its grain size was about 0.3 ${\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and movility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 200K, and by polar optical scattering at temperature range of 200K and 293K. We measured also spectral response, sensitivity$(\gamma)$, maximum allowable power dissipation and response time on these samples.

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Electrical and Optical Propeties of CdS Films Prepared by Vacuum Evaporation (진공증착법으로 제조한 CdS 박막의 전기적 및 광학적 성징)

  • 김동섭;임호빈
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1991.10a
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    • pp.12-16
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    • 1991
  • Cadmium sulphide films with thickness of 0.6∼1.2$\mu\textrm{m}$ were deposited onto corning 7059 glass substrate under a vacuum of 5${\times}$10$\^$-6/ Torr. Source and substrate temperature ranges used were 800∼1100$^{\circ}C$ and 100∼200$^{\circ}C$, respectively. The microstructures and semiconducting properties of the films were studied using X-ray diffraction, UV-VIS-IR spectrophotometer and Hall measurement unit. Electrical resistivity and optical transmission of the CdS films decrease with an increase in source temperature while they increase with an increase in substrate temperature. The resistivity of the film evaporated at 1100$^{\circ}C$ varied from 7${\times}$10$^3$ohm-cm at the substrate temperature of 100$^{\circ}C$ to 2${\times}$10$\_$6/ohm-cm at 190$^{\circ}C$. All the films had hexagonal structure and strong texture with c-axis of grains normal to the substrate glass.

Effect of substrate temperature on the properties of aluminum doped zinc oxide by DC magnetron sputtering

  • Koo, Hong-Mo;Kim, Se-Hyun;Moon, Yeon-Keon;Park, Jong-Wang;Jeong, Chang-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1542-1545
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    • 2005
  • Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on corning 1737 glass by DC magnetron sputter. The structural, electrical and optical properties of the films were investigated as a function of various substrate temperatures. AZO thin films were fabricated by dc magnetron sputtering with AZO ceramic target $(Al_2O_3: 2wt %)$. The obtained films were poly crystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The lowest resistivity is $6.0{\times}10^{-4}$ Ocm with the carrier concentration of $2.694{\times}10^{20}\;cm^{-3}$ and Hall mobility of $20.426cm^2/Vs$. The average transmittance in the visible range was above 90%.

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