• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.695-696
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• 2010

• Bulletin of the Korean Chemical Society
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• v.20 no.1
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• pp.95-98
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• 1999

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2012.05a
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• pp.503-504
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• 2012

• Bulletin of the Korean Chemical Society
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• v.18 no.1
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• pp.75-80
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• 1997

Preparation and properties of Eu(hfa)3·L (Hhfa = hexafluoroacetylacetone, L = bis(2-methoxyethyl)ether, diglyme, and 2, 2':6', 2"-terpyridine, tpy), which are potential CVD precursors for europium, were investigated. The reaction of the Eu2O3 with Hhfa in the presence of tridentate neutral ligand yielded the nine-coordinated Eu(hfa)3·L. Eu(hfa)3·diglyme is air- and moisture-stable and most importantly has good volatility and thermal stability. Eu(hfa)3·tpy shows no sublime intact. The complex Eu(hfa)3·diglyme has been characterized by an X-ray structure determination; monoclinic P21/n, a=10.252(1), b=16.051(6), c=19.392(8) Å, β=96.10(2)°, V=3173(2) Å3. The europium atom in Eu(hfa)3·diglyme adopts a square-antiprismatic geometry with the ninth coordinating oxygen atom capping one of the square faces. All the adducts have been characterized by IR, TGA/DTA.

• Korean Journal of Materials Research
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• v.14 no.1
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• pp.46-51
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• 2004

The annealing of a Cu(4.5at.% Mg)/$SiO_2$/Si structure in ambient $O_2$, at 10 mTorr, and $300-500^{\circ}C$, allows for the outdiffusion of the Mg to the Cu surface, forming a thin MgO (15 nm) layer on the surface. The surface MgO layer was patterned, and successfully served as a hard mask, for the subsequent dry etching of the underlying Mg-depleted Cu films using an $O_2$ plasma and hexafluoroacetylacetone [H(hfac)] chemistry. The resultant MgO/Cu structure, with a taper slope of about $30^{\circ}C$ shows the feasibility of the dry etching of Cu(Mg) alloy films using a surface MgO mask scheme. A dry-etched Cu(4.5at.% Mg) gate a-Si:H TFT has a field effect mobility of 0.86 $\textrm{cm}^2$/Vs, a subthreshold swing of 1.08 V/dec, and a threshold voltage of 5.7 V. A novel process for the dry etching of Cu(Mg) alloy films, which eliminates the use of a hard mask, such as Ti, and results in a reduction in the process steps is reported for the first time in this work.

• Bulletin of the Korean Chemical Society
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• v.17 no.7
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• pp.637-642
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• 1996

Preparation and properties of potential CVD (Chemical Vapor Deposition) precursors for the TiO2, a major component of the perovskite materials such as PT, PLT, PZT, and PLZT were investigated. Reactions between β-diketones and TiMe3, formed in situ failed to produce stable Ti(β-diketonate)3 complexes but a stable purple solid, characterized as (OTi(BPP)2)2 (BPP=1,3-biphenyl-1,3-propanedione) was obtained when BPP was used. Several new Ti(Oi-Pr)2(β-diketonate)2 complexes with aromatic or ring substituents were synthesized by the substitution reaction of Ti(OiPr)4by β-diketones and characterized with 1H NMR, IR, ICP, and TGA. Solid complexes such as Ti(Oi-Pr)2(BAC)2 (BAC=1.-phenyl-2,4-pentanedione), Ti(Oi-Pr)2(BPP)2, Ti(Oi-Pr)2(1-HAN)2 (1-HAN=2-hydroxy-1-acetonaphthone), Ti(Oi-Pr)2(2-HAN)2 (2-HAN=1-hydroxy-2-acetonaphthone), Ti(Oi-Pr)2(ACCP)2 (ACCP=2-acetylcyclopentanone), and Ti(Oi-Pr)2(HBP)2 (HBP=2-hydroxybenzophenone) were found to be stable toward moisture and air. Ti(Oi-Pr)2(ACCP)2 and Ti(Oi-Pr)2(HBP)2 were proved to have lower melting points and higher decomposition temperatures. However, these complexes are thermally stable and pyrolysis under an inert atmosphere resulted in incomplete decomposition. Ti(Oi-Pr)2(DPM)2 (DPM=dipivaloylmethane) and Ti(Oi-Pr)2(HFAA)2 (HFAA=hexafluoroacetylacetone) were sublimed substantially during the thermal decomposition. Pyrolysis mechanism of these complexes are dependent on type of β-diketone but removal of Oi-Pr ligands occurs before the decomposition of β-diketonate ligands.