• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.3
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• pp.59-65
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• 1992

In this paper, the Numerov method is applied to solve the Schroedinger equation for $Al_{0.3}Ga_{0.7}AS/GaAs/Al_{0.3}Ga_{0.7}As$ double-heterojunction HEMT structures. The 3 subband energy levels, corresponding wave functions, 2-dimensional electron gas density, and conduction band edge profile are calculated from a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. In addition, 2-dimensional electron gas densities in a quantum well of double heterostructure are calculated as a function of applied gate voltage. The density in the double heterojunction quantum well is increased to about more than 90%, however, the transconductance of the double heterostructure HEMT is not improved compared to that of the single heterostructure HEMT. Thus, double-heterojunction structures are expected to be suitable to increase the current capability in a HEMT device or a power HEMT structure.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.11.1-11.1
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• 2009

Bulk-heterojunction type organic photovoltaic cells have been remarkably improved due to the development of efficient donors and post treatment process. However, most of researchers have studied on the OPVs using spin-coating method during the past decade. To commercialize the OPVs, much cheaper printing process should be developed such as inkjet, screen, gravure, and so on. In this study, we have focused on the development of printing technology using Inkjet and Aerosol-Jet printing, which can offer reliable device performance. Finally, 4.5% power conversion efficiency can be achieved under AM 1.5 1sun light illumination, which is the highest value in printed OPVs. We reveal that substantial improvement can be realized by highly efficient bulk heterojunction after printing. Also, we can confirm these two printing methods are promising fabrication methods for large area OPVs. Also, flexible and large area (18 cm2) printed OPVs have been fabricated and device performance will be discussed in detail.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.19.2-19.2
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• 2007

• ETRI Journal
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• v.15 no.3
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• pp.61-69
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• 1994

A new analytical model for the base current of Si/SiGe/Si heterojunction bipolar transistors(HBTs) has been developed. This model includes the hole injection current from the base to the emitter, and the recombination components in the space charge region(SCR) and the neutral base. Distinctly different from other models, this model includes the following effects on each base current component by using the boundary condition of the excess minority carrier concentration at SCR boundaries: the first is the effect of the parasitic potential barrier which is formed at the Si/SiGe collector-base heterojunction due to the dopant outdiffusion from the SiGe base to the adjacent Si collector, and the second is the Ge composition grading effect. The effectiveness of this model is confirmed by comparing the calculated result with the measured plot of the base current vs. the collector-base bias voltage for the ungraded HBT. The decreasing base current with the increasing the collector-base reverse bias voltage is successfully explained by this model without assuming the short-lifetime region close to the SiGe/Si collector-base junction, where a complete absence of dislocations is confirmed by transmission electron microscopy (TEM)[1].The recombination component in the neutral base region is shown to dominate other components even for HBTs with a thin base, due to the increased carrier storage in the vicinity of the parasitic potential barrier at collector-base heterojunction.

• Bulletin of the Korean Chemical Society
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• v.33 no.3
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• pp.795-802
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• 2012

Geminate electron-hole recombination in organic solids in the presence of a donor-acceptor heterojunction is studied by computer simulations. We analyze how the charge-pair separation probability in such systems is affected by energetic disorder of the media, anisotropy of charge-carrier mobilities, and other factors. We show that in energetically disordered systems the effect of heterojunction on the charge-pair separation probability is stronger than that in idealized systems without disorder. We also show that a mismatch between electron and hole mobilities reduces the separation probability, although in energetically disordered systems this effect is weaker compared to the case of no energetic disorder. We demonstrate that the most important factor that determines the charge-pair separation probability is the ratio of the sum of electron and hole mobilities to the rate constant of recombination reaction. We also consider systems with mobility anisotropy and calculate the electric field dependence of the charge-pair separation probability for all possible orientations of high-mobility axes in the donor and acceptor phases. We theoretically show that it is possible to increase the charge-pair separation probability by controlling the mobility anisotropy in heterojunction systems and in consequence to achieve higher efficiencies of organic photovoltaic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.390.2-390.2
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• 2016

Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was coated before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction by combining of p-type NiO and n-type ZnO. A functional template of ITO nanowires was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.51-55
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• 2004

$CdS_{0.69}Se_{0.31}$ single crystal grown by sublimation method. Hall effect measurement were carried out by the Van der Pauw method. The measurement values under the temperature were found to be carrier density $n=1.95{\times}10^{23}m^{-3}$, Hall coeffcient $RH=3.21{\times}10^{-5}m^3/c$, conductivity ${\sigma}=362.41{\Omega}^{-1}m^{-1}$, and Hall mobility ${\mu}=1.16{\times}10^{-2}m^2/v.s.$ Heterojunction solar cells of $n-CdS_{0.69}Se_{0.31}/p-Cu_{2-x}S_{0.69}Se_{0.31}$ were fabricated by the substitution reaction. The open-circuit voltage, short-circuit currint density, fill factor and power conversion efficiency of $n-CdS_{0.69}Se_{0.31}/p-Cu_{2-x}S_{0.69}Se_{0.31}$ heterojunction solar cell under $80mW/cm^2$ illumination were found to be 0.41V, $19.5mA/cm^2$, 0.75 and 9.99%, respectivity.

• Solar Energy
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• v.8 no.1
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• pp.41-48
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• 1988

Heterojunction solar cells of $n-Cd_{1-x}Zn_xS/p-Si$ were fabricated by solution growth technique. The crystal structure, spectral response, surface morphology, and I-V characteristics of the $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cells were studied. The $Cd_{1-x}Zn_xS$ layer deposited on a silicon substrate (111) were found to be a cubic structure with the crystal orientation (111), (220) of the CdS and to be a hexagonal structure with crystal orientation (100) of the ZnS. The open-circuit voltage, short-circuit current, fill factor, and conversion efficiency of $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cell under $100mW/cm^2$ illumination were found to be 0.43V, 38mA. 0.76, and 12.4%, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.267-275
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• 2015

In this paper, ZnO films were prepared by atomic layer deposition (ALD) and CdS films were deposited using chemical bath deposition (CBD) to form ZnO/CdS heterojunction. More accurate mapping of band arrangement of the ZnO/CdS heterojunction has been performed by analyzing its electrical and optical characteristics in depth by various methods including transmittance, x-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS). The optical bandgap energies ($E_g$) of ZnO and CdS were 3.27 eV and 2.34 eV, respectively. UPS was capable of extracting the ionization potential energies (IPEs) of the materials, which turned out to be 8.69 eV and 7.30 eV, respectively. The electron affinity (EA) values of ZnO and CdS calculated from IPE and $E_g$ were 5.42 eV and 4.96 eV, respectively. Energy-band structures of the heterojunction could be accurately drawn from these parameters taking the conduction band offset (CBO) into account, which will substantially help acquisition of the full band structures of the thin films in the CIGS solar-cell device and contribute to the optimal device designs.

• Korean Journal of Materials Research
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• v.21 no.9
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• pp.491-496
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• 2011

Transparent conducting oxides (TCOs) used in the antireflection layer and current spreading layer of heterojunction solar cells should have excellent optical and electrical properties. Furthermore, TCOs need a high work function over 5.2 eV to prevent the effect of emitter band-bending caused by the difference in work function between emitter and TCOs. Sn-doped $In_2O_3$ (ITO) film is a highly promising material as a TCO due to its excellent optical and electrical properties. However, ITO films have a low work function of about 4.8 eV. This low work function of ITO films leads to deterioration of the conversion efficiency of solar cells. In this work, ITO films with various Zn contents of 0, 6.9, 12.7, 28.8, and 36.6 at.% were fabricated by a co-sputtering method using ITO and AZO targets at room temperature. The optical and electrical properties of Zn-doped ITO thin films were analyzed. Then, silicon heterojunction solar cells with these films were fabricated. The 12.7 at% Zn-doped ITO films show the highest hall mobility of 35.71 $cm^2$/Vsec. With increasing Zn content over 12.7, the hall mobility decreases. Although a small addition of Zn content increased the work function, further addition of Zn content over 12.7 at.% led to decreasing electrical properties because of the decrease in the carrier concentration and hall mobility. Silicon heterojunction solar cells with 12.7 at% Zn-doped ITO thin films showed the highest conversion efficiency of 15.8%.