• Nuclear Engineering and Technology
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• 제55권6호
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• pp.2298-2304
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• 2023

Titanium alloys are expected to become one of the candidate materials for nuclear-powered spacecraft due to their excellent overall performance. Nevertheless, atomistic mechanisms of the defect accumulation and evolution of the materials due to long-term exposure to irradiation remain scarcely understood by far. Here we investigate the heavy irradiation damage in a-titanium with a dose as high as 4.0 canonical displacements per atom (cDPA) using atomistic simulations of Frenkel pair accumulation. Results show that the content of surviving defects increases sharply before 0.04 cDPA and then decreases slowly to stabilize, exhibiting a strong correlation with the system energy. Under the current simulation conditions, the defect clustering fraction may be not directly dependent on the irradiation dose. Compared to vacancies, interstitials are more likely to form clusters, which may further cause the formation of 1/3<1210> interstitial-type dislocation loops extended along the (1010) plane. This study provides an important insight into the understanding of the irradiation damage behaviors for titanium.

• Nuclear Engineering and Technology
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• 제55권2호
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• pp.555-565
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• 2023

Despite many advantages as structural materials, austenitic stainless steels (SSs) have been avoided in many next generation nuclear systems due to poor void swelling resistance. In this paper, we report the results of heavy ion irradiation to the recently developed advanced radiation resistant austenitic SS (ARES-6P) with nanosized NbC precipitates. Heavy ion irradiation was performed at high temperatures (500 ℃ and 575 ℃) to the damage level of ~200 displacement per atom (dpa). The measured void swelling of ARES-6P was 2-3%, which was considerably less compared to commercial 316 SS and comparable to ferritic martensitic steels. In addition, increment of hardness measured by nano-indentation was much smaller for ARES-6P compared to 316 SS. Though some nanosized NbC precipitates were dissociated under relatively high dose rate (~5.0 × 10^-4 dpa/s), sufficient number of NbC precipitates remained to act as sink sites for the point defects, resulting in such superior radiation resistance.

• Nuclear Engineering and Technology
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• 제52권11호
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• pp.2585-2593
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• 2020

Swift heavy ion (SHI) beam irradiation can generate desirable defects in materials by transferring sufficient energy to the lattice that favours huge possibilities in tailoring of materials. The effect of Ag¹⁵⁺ ion irradiation with energy 200 MeV on spray deposited V₂O₅ thin films of thickness 253 nm is studied at various ion doses from 5 × 10¹¹ to 1 × 10¹³ ions/㎠. The XRD results of pristine film confirmed orthorhombic structure of V₂O₅ and its average crystallite size was found to be 20 nm. The peak at 394 cm^-1 in Raman spectra confirmed O-V-O bonding of V₂O₅, whereas 917 cm^-1 arise because of distortion in stoichiometry by a loss of oxygen atoms. Raman peaks vanished completely above the ion fluence of 5 × 10¹² ions/㎠. Optical studies by UV-Vis spectroscopy shows decrement in transmittance with an increase in ion fluence up to 5 × 10¹² ions/㎠. The red shift is observed both in the direct and indirect band gaps until 5 × 10¹² ions/㎠. The surface topography of the pristine film revealed sheath like structure with randomly distributed spherical nano-particles. The roughness of film decreased and the density of spherical nanoparticles increased upon irradiation. Irradiation improved the conductivity significantly for fluence 5 × 10¹¹ ions/㎠ due to band gap reduction and grain growth.

• 한국화재소방학회논문지
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• 제26권2호
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• pp.11-16
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• 2012

본 연구에서는 정확한 화재원인 분석 및 사기범죄 여부 확인을 위하여 극초단파를 직접 폴더형 휴대전화에 조사하고, 이때 발생되는 휴대전화의 손상형태를 분석하였다. 극초단파 조사를 위하여 전자레인지를 이용하였으며, 전자레인지의 마그네트론에서 발생되는 2.45 GHz의 극초단파가 휴대전화에 인가될 때 휴대전화의 손상형태를 분석하였다. 실험 결과, 휴대전화에 극초단파를 조사하는 경우, 조사 시간이 길어짐에 따라 심하게 손상되는 경향을 나타내었으며, 특히, 폴더의 힌지 부분 및 인테나 부분과 같이 금속이 설치되는 부분이 심하게 열변형되는 결과를 나타내었다. 휴대전화의 배터리 부분은 외함이 열변형되는 것 이외에 배터리의 손상이나 폭발 등은 발생되지 않는 것으로 평가되었다.

• Nuclear Engineering and Technology
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• 제51권5호
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• pp.1428-1435
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• 2019

The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous ($P^{7+}$) and 80 MeV nitrogen ($N^{6+}$) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were examined in the total dose range from 1 to 100 Mrad(Si). The in-situ I-V characteristics like Gummel characteristics, excess base current (${\Delta}I_B$), net oxide trapped charge ($N_{OX}$), current gain ($h_{FE}$), avalanche multiplication (M-1), neutral base recombination (NBR) and output characteristics ($I_C-V_{CE}$) were analysed before and after irradiation. The significant degradation in device parameters was observed after $100MeV\;P^{7+}$ and $80MeV\;N^{6+}$ ion irradiation. The $100MeV\;P^{7+}$ ions create more damage in the SiGe HBT structure and in turn degrade the electrical characteristics of SiGe HBTs more when compared to $80MeV\;N^{6+}$. The SiGe HBTs irradiated up to 100 Mrad of total dose were annealed from $50^{\circ}C$ to $400^{\circ}C$ in different steps for 30 min duration in order to study the recovery of electrical characteristics. The recovery factors (RFs) are employed to analyse the contribution of room temperature and isochronal annealing in total recovery.

• 한국독성학회:학술대회논문집
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• 한국독성학회 2006년도 추계학술대회
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• pp.55-64
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• 2006

The fetal central nervous system (CNS) is sensitive to diverse environmental factors, such as alcohol, heavy metals, irradiation, mycotoxins, neurotransmitters, and DNA damage, because a large number of processes occur during an extended period of development. Fetal neural damage is an important issue affecting the completion of normal CNS development. As many concepts about the brain development have been recently revealed, it is necessary to compare the mechanism of developmental abnormalities induced by extrinsic factors with the normal brain development. To clarify the mechanism of fetal CNS damage, we used one experimental model in which 5-azacytidine (5AZC), a DNA damaging and demethylating agent, was injected to the dams of rodents to damage the fetal brain. 5AzC induced cell death (apoptosis)and cell cycle arrest in the fetal brain, and it lead to microencephaly in the neonatal brain. We investigated the mechanism of apoptosis and cell cycle arrest in the neural progenitor cells in detail, and demonstrated that various cell cycle regulators were changed in response to DNA damage. p53, the guardian of genome, played a main role in these processes. Further, using DNA microarray analysis, tile signal cascades of cell cycle regulation were clearly shown. Our results indicate that neural progenitor cells have the potential to repair the DNA damages via cell cyclearrest and to exclude highly affected cells through the apoptotic process. If the stimulus and subsequent DNA damage are high, brain development proceeds abnormally and results in malformation in the neonatal brain. Although the mechanisms of fetal brain injury and features of brain malformation afterbirth have been well studied, the process between those stages is largely unknown. We hypothesized that the fetal CNS has the ability to repair itself post-injuring, and investigated the repair process after 5AZC-induced damage. Wefound that the damages were repaired by 60 h after the treatment and developmental processes continued. During the repair process, amoeboid microglial cells infiltrated in the brain tissue, some of which ingested apoptotic cells. The expressions of genes categorized to glial cells, inflammation, extracellular matrix, glycolysis, and neurogenesis were upregulated in the DNA microarray analysis. We show here that the developing brain has a capacity to repair the damage induced by the extrinsic stresses, including changing the expression of numerous genes and the induction of microglia to aid the repair process.

• 한국동물학회지
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• 제8권2호
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• pp.9-14
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• 1965

The frequency of reicprocal translocation damage in males of D. melanogaster irradiated with X-rays was observed in this study. The frequencies were checked at four periods with two days intervals and duration spermatogenesis after irradiation. (1) Modification in the percentage of the reciprocal translocation damage were not obtained at interval after irradiated with 500r and 1500r of X-rays respectively. (2) In two experimental groups irradiated with 50-0r and 1500r of X-rays, the frequencies showing in the spermatogenesis were 0.50%(500r), 3.85%(1500r) in mature sperm, and 1.59%, 8.10% in the spermatocyte. (3) The frequency of reciprocal translocation between the Y and 3 rd chromosomes was the highest, but in accordance with dosage increase that of 2nd and 3rd chromosomes relatively increased from 9.34 % to 30.49% while decreased from 68.75% to 46.80% in the group of the Y and 3 rd chromosomes. (4) It was supposed that these modifications of the frequency were due to heavy damage of the 2nd chromosomes than other chromosomes in accordance with dosage increase. (5) Spontaneous reciprocal translocations involving the Y, 2nd and 3rd chormosomes was 0.23%.

• 한국동물학회지
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• 제21권2호
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• pp.43-58
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• 1978

양서류 수정란을 제 1 난할전에 중금속으로 처리하였던바 개구리의 시원생식세포수의 양전변화를 가져 왔다. 중금속의 일정량의 처리는 양서류 초기발생중에 시원생식세포 형성을 저하시켰다. 납 70ppm과 카드뮴 4ppm 이상에서 배양하면 9내지 12mm배에서 시원생식세포의 수적감소를 가져 왔으나 그후의 발생에서는 거의 정상군과같은 증가율을 보였다. 한편 수은 0.8ppm이상의 처리군에서는 생식 세포형성에 보다 심한 저하를 가져 왔으며 그후의 증가율도 대체로 낮았다. 위의 사실들은 자외선 조사 실험에서 얻은 결과와는 달리 양서류란에 있어서 중금속 처리는 조직에 심한 손상을 주는 다량투여에도 시원생식세포의 완전 배제에는 효과가 적다는 것을 암시한다.

• 조명전기설비학회논문지
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• 제28권12호
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• pp.38-44
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• 2014

The photovoltaic power system is performing power generation by being installed in outdoors. Therefore it has the characteristics affected by environmental factors. In particular, if the solar power generation facility connected to the grid, the power can be generated continuously in a state of being secured operating voltage of the inverter and solar irradiation. In that case, if an abnormal situation such as flooding or heavy rains has occur, the possibility of electric shock or damage of facilities due to current leakage or a floating matters is present. In this paper, we performed electrical safety assessment about the connection part, junction box and cable of the solar module when the solar power system was flooded. we also assessed whether or not the leakage current is occurred in case of the cable was damaged. As a result, in case of the leakage current is large, we can be known that it is the risk of electric shock as well as cause of inverter damage.

• 환경생물
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• 제29권3호
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• pp.236-240
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• 2011

수은이 DNA 수복에 미치는 영향을 알아보기 위해 E. fetida를 염화수은(II)과 이온화 방사선에 순차적으로 노출시킨 후, 단세포 겔 전기영동 기법을 이용하여 DNA의 손상 수준과 방사선 조사 후 시간 경과에 따른 수복 양상을 관찰하였다. 염화수은(II)의 농도를 40 mg $kg^{-1}$으로 하여 48시간 동안 in vivo 노출 시험을 수행한 뒤 20Gy의 감마선을 조사한 결과, 시간이 지날수록 대체로 DNA 손상의 수준이 감소했다. 이온화 방사선에 의해 손상된 DNA가 완전히 수복되기 위해 요구되는 시간을 비교해 보면, 수은과 감마선에 함께 노출된 E. fetida는 방사선 조사 후 약 37시간, 감마선만 조사한 실험군은 약 2.35시간이 지나고 난 뒤 손상된 DNA의 대부분이 수복되는 것을 볼 수 있었다. 한편 E. fetida에 20 Gy의 감마선을 조사하면 방사선 조사가 끝나고 약 45분, 수은 처리 후 방사선을 조사하면 약 1시간 12분 정도가 경과한 시점에서 손상되었던 DNA의 절반이 수복되는 것을 확인할 수 있었다. 또한 DNA 수복 속도가 빠른 구간을 도식화하여 그 기울기를 계산한 결과, 수은에 노출된 실험군의 DNA 수복률은 수은에 노출되지 않은 실험군보다 약 5배 정도 수복 속도가 느리다고 판단할 수 있었다. 손상된 DNA가 천천히 수복되는 구간을 수식으로 표현해 DNA의 미수복분율을 산출하면 방사선 단독처리군과 수은 및 방사선의 복합처리군의 미수복분율은 각각 0.4910과 0.9470로 나타난다. 미수복분율 값의 차는 수은에 의해 DNA의 정상적인 수복이 방해되었음을 의미한다.