• 한국전기전자재료학회논문지
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• 제22권2호
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• pp.101-106
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• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• 한국산업융합학회 논문집
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• 제24권4_2호
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• pp.509-515
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• 2021

In this study, a pressure vessel for a heat pipe was fabricated by bonding a metal thin film using a polymer compound sheet. In order to confirm the applicability of the experimentally manufactured copper material thin heat pipe of 0.6 mm or less, the pressure resistance and effective thermal conductivity for pressure generated according to the type of the working fluid of the heat pipe were evaluated to suggest the commercialization potential of the thin heat pipe. As a result of evaluating the pressure resistance and effective thermal conductivity performance of the thin heat pipe, the following conclusions were drawn. 1) Using a PEEK-based polymer compound sheet, it was possible to fabricate a pressure vessel for a thin heat pipe with a pressure resistance of up to 1.0 MPa by bonding a copper thin film, and the possibility of commercialization was confirmed at a temperature below 120 ℃. 2) In the case of the effective thermal conductivity performance evaluation test, the effective thermal conductivity of ethanol was higher than that of FC72 and Novec7000, and in the case of ethanol, the maximum effective thermal conductivity was 2,851 W/mK at 3.0 W of heating.

• Journal of Electrochemical Science and Technology
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• 제13권3호
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• pp.390-397
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• 2022

The use of microwaves as the energy source for synthesis and sintering of ceramics offers substantial advantages compared to conventional gas-fired and electric resistance furnaces. Benefits include much shorter processing times and reaching the sintering temperature more quickly, resulting in superior final product quality. Most oxide ceramics poorly interact with microwave irradiation at low temperatures; thus, a more complex setup including a susceptor is needed, which makes the whole process very complicated. This investigation pursued a new approach, which enabled us to use microwave irradiation directly in poorly coupled oxides. In many solid-state electrochemical devices, the support is either metal or can be reduced to metal. Metal powders in the support can act as an internal susceptor and heat the entire cell. Then sufficient interaction of microwave irradiation and ceramic material can occur as the sample temperature increases. This microwave heating and exothermic reaction of oxidation of the support can sinter the ceramic very efficiently without any external susceptor. In this study, yttria stabilized zirconia (YSZ) and a Ni-YSZ cermet support were used as an example. The cermet was used as the support, and a YSZ electrolyte was coated and sintered directly using microwave irradiation without the use of any susceptor. The results were compared to a similar cell prepared using a conventional electric furnace. The leakage test and full cell power measurement results revealed a fully leak-free electrolyte. Scanning electron microscopy and density measurements show that microwave sintered samples have lower open porosity in the electrode support than conventional heat treatment. This technique offers an efficient way to directly use microwave irradiation to sinter thin film ceramics without a susceptor.

• Composites Research
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• 제31권2호
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• pp.63-68
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• 2018

열가소성 복합재료는 다양한 장점에도 불구하고 기계적 특성이 낮아 고성능 항공산업 분야에서는 제한적으로 사용되어 왔으나 최근 열가소성 방향족 폴리머 복합재들이 많이 연구/활용되고 있다. 본 연구에서는 대표적인 열가소성 방향족 폴리머인 PEEK와 PPS Neat 수지 필름을 DSC 기기를 이용하여 가열, 냉각 및 재 가열 사이클을 연속적으로 수행하여 유리전이온도 및 용융온도 등의 특성변화를 확인하고 냉각속도에 따른 결정화도(Crystallinity)의 차이를 평가하였다. 1차 가열단계에서 각 폴리머의 용융온도보다 높은 온도에 5분간 유지시켜 이전 열이력을 제거하였고 2차 냉각단계에서 냉각속도를 분당 2, 5, 10, 20 및 $40^{\circ}C$로 조절/적용함으로서 결정화반응을 제어하였으며, 3차 가열단계에서 재가열하여 용융엔탈피를 측정함으로서 결정화도 차이를 확인하였다. 높은 비정질 영역을 가진 시편의 첫 번째 가열시 냉각결정화 현상이 일어나고 뚜렷한 유리상 전이구역을 확인할 수 있었던 반면에 결정질 영역이 증가된 재가열시에는 냉각결정화 현상이 일어나지 않고 상대적으로 유리상 전이구역이 약해지는 것을 확인하였다. 2차 냉각단계에서 냉각속도가 느려짐에 따라 결정화도가 높아졌는데 PEEK의 경우 냉각속도의 차이에 따라 21.9~39.3% 결정화도를 보였으며, PPS는 29.1~31.2% 결정화도 차이를 얻을 수 있었다.

• 공업화학
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• 제7권6호
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• pp.1078-1086
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• 1996

본 연구에서는 W-IPA(peroxo-polytungstic acid)를 출발 물질로 하는 졸 용액을 ITO(indium tin oxide)가 입혀진 유리판 위에 침적 도포(dip-coating) 방법으로 침적시키고, 이것을 겔화시킨 후에 열처리하여 전기 발색 소자 (electrochromic device, ECD)의 텅스텐 산화물 박막 전극을 만들어 이의 전기화학적인 특성을 고찰하였다. 가장 좋은 전기 화학적 특성을 나타내는 조건은 $2g/10mL(W-IPA/H_2O)$졸 용액에 15회 침적 도포하여 $230{\sim}240^{\circ}C$의 온도로 최종 열처리 한 텅스텐 산화물 박막 전극이었으며, 침적 횟수의 증가에 따라 산화 텅스텐 박막의 두께는 비례하여 증가하였고, 5회 침적 도포 이후에는 1회 침적 도포시 약 $60{\AA}$ 두께로 막이 생성됨을 알 수 있었다. 졸-겔법으로 제조된 텅스텐 산화물 박막 전극은 X-선 회절 분석에 의하여 비정질 구조, 주사 전자 현미경에 의하여 박막 표면은 균일한 것으로 조사되었다. 다중 순환 전류-전위 주사법에 의하여 작성된 전류-전위 곡선에 의하면 순환 횟수가 수백회 이상임에도 불구하고 소 발색은 뚜렷하게 나타났으나, 더욱 많은 순환 횟수에서는 전해질인 황산 수용액 중에서 텅스텐 산화물 박막의 박리 현상이 일어나 소 발색의 전류 밀도는 차츰 감소하였다. 전위 주사 속도를 변화시키면서 순환 전류-전위 주사법에 의하여 작성된 전류-전위 곡선으로부터 구한 전기화학적 특성 값을 이용하여 반응에 참여하는 수소 이온의 확산 계수를 구할 수 있었다.

• 한국표면공학회지
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• 제41권5호
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• pp.214-219
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• 2008

Indium tin oxide (ITO) films were deposited on PET substrate by RF superimposed DC magnetron sputtering using ITO (doped with 10 wt% $SnO_2$) target. Substrate temperature was maintained below $750^{\circ}C$ without intentionally substrate heating during the deposition. The discharge voltage of DC power supply was decreased from 280 V to 100 V when superimposed RF power was increased from 0 W to 150 W. The electrical properties of the ITO films were improved with increasing of superimposed RF power. In the result of cyclic bending test, relatively high mechanical property was obtained for the ITO film deposited with RF power of 75 W under DC current of 0.75 A which could be attributed to the decrease of internal stress caused by decrease in both deposition rate and plasma impedance.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회B
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• pp.2609-2614
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• 2007

Shell & Tube type Oil Cooler is widely used for hydraulic presses, die casting machines, generation equipments, machine tools and construction heavy machinery. Temperature of oil in the hydraulic system changes viscosity and thickness of oil film. They have a bad effect to performance and lubrication of hydraulic machinery, so it is important to know exactly the heat exchanging efficiency of oil cooler for controlling oil temperature. But most Korean manufacturers do not have test equipment for oil cooler, so they cannot carry out the efficiency test of oil cooler and it is impossible to verify its performance. This paper includes information of construction of necessary utilities for oil cooler test and design and manufacture of test equipment. One can select the optimum product by obtaining performance data through tests of various kinds of oil coolers. And also the paper developed a program which can be easily used for design of 2D and 3D drawings of oil cooler.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.956-960
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• 2009

The characteristics of organic films can be affected by the temperature of evaporation source because the temperature of evaporation source has an effect on substrate temperature during OLED fabrication process using the thermal evaporation. To investigate the characteristics of OLED devices fabricated by using thermally damaged organic films, I-V-L and half life-time in OLED devices fabricated with various substrate temperatures were measured. During emission layer(EML) evaporation, OLED devices with a structure of ITO(100 nm)/ELM200(50 nm)/NPB(30 nm)/$Alq_3$(55 nm)/LiF(0.7 nm)/Al(100 nm) were fabricated at various substrate temperatures(room temperature, $30^{\circ}C$, $40^{\circ}C$, and $50^{\circ}C$). The characteristics of current density and luminance versus applied voltage in OLED devices fabricated shows that many electrical currents flowed and high brightness appeared at low voltage, but that the lifetime of OLED devices dropped suddenly. This phenomenon explained that the crystallization of $Alq_3$ thin film appeared owing to the substrate heating during evaporation.

• Transactions on Electrical and Electronic Materials
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• 제14권5호
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• pp.242-245
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• 2013

Sn-doped $In_2O_3$ (ITO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on bare glass and $TiO_2$-deposited glass substrates to investigate the effect of a $TiO_2$ buffer layer on the electrical and optical properties of ITO films. The thicknesses of $TiO_2$ and ITO films were kept constant at 5 and 100 nm, respectively. As-deposited ITO single layer films show an optical transmittance of 75.9%, while $ITO/TiO_2$ bi-layered films show a lower transmittance of 76.1%. However, as-deposited $ITO/TiO_2$ films show a lower resistivity ($9.87{\times}10^{-4}{\Omega}cm$) than that of ITO single layer films. In addition, the work function of the ITO film is affected by the $TiO_2$ buffer layer, with the $ITO/TiO_2$ films having a higher work-function (5.0 eV) than that of the ITO single layer films. The experimental results indicate that a 5-nm-thick $TiO_2$ buffer layer on the $ITO/TiO_2$ films results in better performance than conventional ITO single layer films.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.209-212
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• 2011

Hafnium nitride (HfN) thin films were deposited onto a silicon substrate by inductive coupled nitrogen plasma-assisted radio frequency magnetron sputtering. The films were prepared without intentional substrate heating and a substrate negative bias voltage ($-V_b$) was varied from -50 to -150 V to accelerate the effects of nitrogen ions ($N^+$) on the substrate. X-ray diffractometer patterns showed that the structure of the films was strongly affected by the negative substrate bias voltage, and thin film crystallization in the HfN (100) plane was observed under deposition conditions of -100 $V_b$ (bias voltage). Atomic force microscopy results showed that surface roughness also varied significantly with substrate bias voltage. Films deposited under conditions of -150 $V_b$ (bias voltage) exhibited higher hardness than other films.