• Title/Summary/Keyword: Heating film

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Yield Increase and Energy Saving Effect on Plastic Greenhouse Covered with Polyolefin Film (PO필름 피복 온실의 수량 증대 및 에너지 절감 효과)

  • Moon, Jong Pil;Park, Seok Ho;Kim, Jin Gu;Lee, Jae Han;Kang, Youn Koo;Lim, Mi Young;Kim, Hye Min
    • Journal of Bio-Environment Control
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    • v.29 no.4
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    • pp.428-439
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    • 2020
  • This study was carried out to investigate the effect of PO film on the increase of crop yield and energy saving through PO and PE film greenhouse application and comparison test. As a experimental greenhouse, two single span greenhouses (1-1 W) and two double span greenhouses (1-2 W) were used. During winter season, PO film (0.15 mm outer layer, 0.10mm inner layer) was used as a covering material of greenhouse in double layers for double-span (B15) and single-span(B21), and PE film used for double-span (B15), and single-span (B23) as a control. The experimental vegetable was tomato(Solanum lycopersicum L.) cultivated in soil and the cultivar of that was 'Happiness'. That was cultivated from December 3, 2019 to April 30, 2020. The temperature at night inside the greenhouse was maintained at 15℃, and the side and roof windows were opened to maintain 23 ~ 24℃ during the day. As a result, this study showed that the yield in single-span greenhouse(B21) covered with a PO film increased 20% and that in double-span greenhouse (B16) increased by 9% compared to the greenhouse covered with a PE film (B23, B15). Fuel consumption of the single-span greenhouse (B21) with the cover of PO film was reduced by 12.4% and that of double-span greenhouse was done by 11.5% compared to that of the PE film greenhouse (B23, B15) without any difference between them in growing state.

Effects of Mo and Si on the Coercivity of CoCrTa/CrMo and CoCrTa/CrSi Thin Film Media (CoCrTa/CrX (X=Mo, Si) 자성박막의 보자력에 미치는 Mo와 Si의 영향)

  • 조준식;남인탁;홍양기
    • Journal of the Korean Magnetics Society
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    • v.9 no.4
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    • pp.203-209
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    • 1999
  • Effects of Mo and Si addition in Cr underlayer on magnetic properties of CoCrTa/CrMo and CoCrTa/Si thin films media were investigated. Thin films were prepared with DC magnetron sputtering system. The thickness of CoCrTa magnetic layer and Cr underlayer were fixed at 300 $\AA$ and 700 $\AA$, respectively. The substrate heating temperature was kept constant at 26$0^{\circ}C$ for both magnetic layer and underlayer preparation. The coercivity increase of CoCrTa film was realized due to Mo addition in Cr underlayer. Si addition made a small decrease in coercivity. Coercivity increase seems to be attributed by the improvement of preferred orientation of Cr(200) plane. It is found that lattice fit between Cr(200) and CoCrTa(1120) of CrMo underlayer is better than that of CrSi underlayer. This small misfit may also contribute coercivity increase.

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CNT-PDMS Composite Thin-Film Transmitters for Highly Efficient Photoacoustic Energy Conversion

  • Song, Ju Ho;Heo, Jeongmin;Baac, Hyoung Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.297.2-297.2
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    • 2016
  • Photoacoustic generation of ultrasound is an effective approach for development of high-frequency and high-amplitude ultrasound transmitters. This requires an efficient energy converter from optical input to acoustic output. For such photoacoustic conversion, various light-absorbing materials have been used such as metallic coating, dye-doped polymer composite, and nanostructure composite. These transmitters absorb laser pulses with 5-10 ns widths for generation of tens-of-MHz frequency ultrasound. The short optical pulse leads to rapid heating of the irradiated region and therefore fast thermal expansion before significant heat diffusion occurs to the surrounding. In this purpose, nanocomposite thin films containing gold nanoparticles, carbon nanotubes (CNTs), or carbon nanofibers have been recently proposed for high optical absorption, efficient thermoacosutic transfer, and mechanical robustness. These properties are necessary to produce a high-amplitude ultrasonic output under a low-energy optical input. Here, we investigate carbon nanotube (CNT)-polydimethylsiloxane (PDMS) composite transmitters and their nanostructure-originated characteristics enabling extraordinary energy conversion. We explain a thermoelastic energy conversion mechanism within the nanocomposite and examine nanostructures by using a scanning electron microscopy. Then, we measure laser-induced damage threshold of the transmitters against pulsed laser ablation. Particularly, laser-induced damage threshold has been largely overlooked so far in the development of photoacoustic transmitters. Higher damage threshold means that transmitters can withstand optical irradiation with higher laser energy and produce higher pressure output proportional to such optical input. We discuss an optimal design of CNT-PDMS composite transmitter for high-amplitude pressure generation (e.g. focused ultrasound transmitter) useful for therapeutic applications. It is fabricated using a focal structure (spherically concave substrate) that is coated with a CNT-PDMS composite layer. We also introduce some application examples of the high-amplitude focused transmitter based on the CNT-PDMS composite film.

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APCVD Process of SnO2 Thin-Film on Glass for Transparent Electrodes of Large-Scale Backplanes (대면적 기판의 투명 전극용 SnO2 박막 증착을 위한 APCVD 공정)

  • Kim, Byung-Kuk;Kim, Hyunsoo;Kim, Hyoung June;Park, Joonwoo;Kim, Yoonsuk;Park, Seungho
    • Transactions of the KSME C: Technology and Education
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    • v.1 no.1
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    • pp.7-12
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    • 2013
  • Tin oxide thin-films have been widely applied in various fields of high-technology industries due to their excellent physical and electric properties. Those applications are found in various sensors, heating elements of windshield windows, solar cells, flat panel displays as tranparent electrodes. In this study, we conducted an experiment for the deposition of $SnO_2$ on glass of 2nd Gen. size for the effective development of large-scale backplanes. As deposition temperatures or flow rates of the $SnCl_4$ as a precursor changed, the thickness of tin oxide thin-films, their sheet resistances, transmittances, and hazes varied considerably.

Evaluation and Comparison of Nanocomposite Gate Insulator for Flexible Thin Film Transistor

  • Kim, Jin-Su;Jo, Seong-Won;Kim, Do-Il;Hwang, Byeong-Ung;Lee, Nae-Eung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.278.1-278.1
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    • 2014
  • Organic materials have been explored as the gate dielectric layers in thin film transistors (TFTs) of backplane devices for flexible display because of their inherent mechanical flexibility. However, those materials possess some disadvantages like low dielectric constant and thermal resistance, which might lead to high power consumption and instability. On the other hand, inorganic gate dielectrics show high dielectric constant despite their brittle property. In order to maintain advantages of both materials, it is essential to develop the alternative materials. In this work, we manufactured nanocomposite gate dielectrics composed of organic material and inorganic nanoparticle and integrated them into organic TFTs. For synthesis of nanocomposite gate dielectrics, polyimide (PI) was explored as the organic materials due to its superior thermal stability. Candidate nanoprticles (NPs) of halfnium oxide, titanium oxide and aluminium oxide were considered. In order to realize NP concentration dependent electrical characteristics, furthermore, we have synthesized the different types of nanocomposite gate dielectrics with varying ratio of each inorganic NPs. To analyze gate dielectric properties like the capacitance, metal-Insulator-metal (MIM) structures were prepared together with organic TFTs. The output and transfer characteristics of organic TFTs were monitored by using the semiconductor parameter analyzer (HP4145B), and capacitance and leakage current of MIM structures were measured by the LCR meter (B1500, Agilent). Effects of mechanical cyclic bending of 200,000 times and thermally heating at $400^{\circ}C$ for 1 hour were investigated to analyze mechanical and thermal stability of nanocomposite gate dielectrics. The results will be discussed in detail.

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Surface Plasmon Effect in Hot Electron Based Photovoltaic Devices

  • Lee, Yeong-Geun;Jeong, Chan-Ho;Park, Jong-Hyeok;Park, Jeong-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.162-162
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    • 2011
  • Nanometer-sized noble metals can trap and guide sunlight for enhanced absorption of light based on surface plasmon that is beneficial for generation of hot electron flows. A pulse of high kinetic energy electrons (1-3 eV), or hot electrons, in metals can be generated after surface exposure to external energy, such as in the absorption of light or in exothermic chemical processes. These energetic electrons are not at thermal equilibrium with the metal atoms. It is highly probable that the correlation between hot electron generation and surface plasmon can offer a new guide for energy conversion systems [1-3]. We show that hot electron flow is generated on the modified gold thin film (<10 nm) of metal-semiconductor (TiO2) Schottky diodes by photon absorption, which is amplified by localized surface plasmon resonance. The short-circuit photocurrent obtained with low energy photons (lower than bandgap of TiO2, ~3.1-3.2 eV) is consistent with Fowler's law, confirming the presence of hot electron flows. The morphology of the metal thin film was modified to a connected gold island structure after heating to 120, 160, 200, and 240$^{\circ}C$. These connected island structures exhibit both a significant increase in hot electron flow and a localized surface plasmon with the peak energy at 550-570 nm, which was separately characterized with UV-Vis [4]. The result indicates a strong correlation between the hot electron flow and localized surface plasmon resonance with possible application in hot electron based solar cells and photodetectors.

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AES Analysis of Au, Au/Cr, Au/Ni/Cr and Au/Pd/Cr Thin Films by the Change of Substrate Temperature and Annealing Temperature (기판온도와 열처리온도의 변화에 따른 Au/Cr, Au/Ni/Cr 및 Au/Pd/Cr 다층박막의 AES 분석)

  • Yoo, Kwang Soo;Jung, Hyung Jin
    • Analytical Science and Technology
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    • v.6 no.2
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    • pp.217-223
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    • 1993
  • Thin films of the Au/Cr, Au/Ni/Cr and Au/Pd/Cr systems were deposited on alumina substrates at ambient temperature and $250^{\circ}C$ in a high-vacuum resistance heating evaporator and annealed at $300^{\circ}C$, $450^{\circ}C$ and $600^{\circ}C$ for 1 hour in air, respectively. The film thicknesses of Au, Ni(or pd), and Cr were $1000{\AA}$, $300{\AA}$, and $50{\AA}$, respectively. The substrate temperature during deposition and the post-deposition annealing temperature affected the sheet resistance of thin-films due to the inter-diffusion of each layer. As a result of Auger depth profile analysis, in the Au/Cr system Cr already diffused out to Au surface during deposition at the substrate temperature of $250^{\circ}C$ and Au distribution changed after heat treatment. In the Au/Ni/Cr and Au/Pd/Cr systems, diffusion phenomena of Ni and Pd were found and especially Ni (approximately 45 at.%) diffused out to Au surface and oxidized.

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Properties of ITO on PES film in dependence on the coating conditions and vacuum annealing temperatures (증착조건과 진공열처리 온도에 따른 ITO/PES 박막의 특성 연구)

  • Lee, Jae-Young;Park, Ji-Hye;Kim, Yu-Sung;Chun, Hui-Gon;You, Yong-Zoo;Kim, Dae-Il
    • Korean Journal of Materials Research
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    • v.17 no.4
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    • pp.227-231
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    • 2007
  • Transparent conducting indium tin oxide (ITO) films were deposited onto the Polyethersulfone (PES) substrate by using a magnetron sputter type negative metal ion source. In order to investigate the influence of cesium (Cs) partial pressure during deposition and annealing temperature on the optoelectrical properties of ITO/PES film the films were deposited under different Cs partial pressures and post deposition annealed under different annealing temperature from $100^{\circ}C$ to $170^{\circ}C$ for 20 min at $3\;{\times}\;10^{-1}$ Pa. Optoeleetrical properties of ITO films deposited without intentional substrate heating was influenced strongly by the Cs partial pressure and the Cs partial pressure of $1.5\;{\times}\;10^{-3}$ Pa was characterized as an optimal Cs flow condition. By increasing post-deposition vacuum annealing temperature both optical transmission in visible light region and electrical conductivity of ITO films were increased. Atomic force microscopy (AFM) micrographs showed that the surface roughness also varied with post-deposition vacuum annealing temperature.

Heat Spreading Properties of CVD Diamond Coated Al Heat Sink (CVD 다이아몬드가 코팅된 알루미늄 방열판의 방열 특성)

  • Yoon, Min Young;Im, Jong Hwan;Kang, Chan Hyoung
    • Journal of Surface Science and Engineering
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    • v.48 no.6
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    • pp.297-302
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    • 2015
  • Nanocrystalline diamond(NCD) coated aluminium plates were prepared and applied as heat sinks for LED modules. NCD films were deposited on 1 mm thick Al plates for times of 2 - 10 h in a microwave plasma chemical vapor deposition reactor. Deposition parameters were the microwave power of 1.2 kW, the working pressure of 90 Torr, the $CH_4/Ar$ gas ratio of 2/200 sccm. In order to enhance diamond nucleation, DC bias voltage of -90 V was applied to the substrate during deposition without external heating. NCD film was identified by X-ray diffraction and Raman spectroscopy. The Al plates with about 300 nm thick NCD film were attached to LED modules and thermal analysis was carried out using Thermal Transient Tester (T3ster) in a still air box. Thermal resistance of the module with NCD/Al plate was 3.88 K/W while that with Al plate was 5.55 K/W. The smaller the thermal resistance, the better the heat emission. From structure function analysis, the differences between junction and ambient temperatures were $12.1^{\circ}C$ for NCD/Al plate and $15.5^{\circ}C$ for Al plate. The hot spot size of infrared images was larger on NCD/Al than Al plate for a given period of LED operation. In conclusion, NCD coated Al plate exhibited better thermal spreading performance than conventional Al heat sink.

Effect of Seed-layer thickness on the Crystallization and Electric Properties of SBN Thin Films. (SBN 박막의 결정화 및 전기적 특성에 관한 씨앗층 두께의 영향)

  • Jang, Jae-Hoon;Lee, Dong-Gun;Lee, Hee-Young;Cho, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.271-274
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    • 2003
  • [ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin films of different thickness were pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $4500\;{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800\;^{\circ}C$ in air, respectively, The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was difference in the crystal structure with heat-treatment temperature, and the electric properties depended on the heating temperature and the seed-layer thickness. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15\;{\mu}C/cm^2$, the coercive field (Ec) 65 kV/cm, and the dielectric constant 1492, respectively.

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